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Vishay Siliconix SI1304BDL-T1-GE3

Name: SI1304BDL-T1-GE3
Brand: Vishay Siliconix
SKU: SI1304BDL-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI1304BDL-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: SC-70, SOT-323

Datasheet:: SI1304BDL-T1-GE3.pdf

Description:: MOSFET N-CH 30V 900MA SC70-3

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Product details

Overview

SI1304BDL-T1-GE3 from Vishay Siliconix is an N-channel 30 V TrenchFET® power MOSFET in SC-70 (3-lead) package, rated for 0.90 A continuous drain current at T_C = 25 °C, with R_DS(on) = 0.270 Ω at V_GS = 4.5 V and 0.385 Ω at V_GS = 2.5 V, used in low-power load switching and battery protection circuits.

For engineers reviewing the SI1304BDL-T1-GE3 datasheet, SI1304BDL-T1-GE3 pinout, SI1304BDL-T1-GE3 application, or SI1304BDL-T1-GE3 equivalent, this page delivers verified electrical parameters, thermal resistance values (R_thJA = 315 °C/W typ), gate charge (Q_g = 1.8 nC typ at V_GS = 4.5 V), body diode characteristics (V_SD = 0.8–1.2 V), and SC-70 footprint compatibility for space-constrained PCB designs.

Technical Context

This device employs trench-gate MOSFET technology to achieve low on-resistance in a miniature surface-mount package. Its gate threshold voltage (V_GS(th) = 0.6–1.3 V) enables direct logic-level drive from 2.5 V and 3.3 V microcontrollers, while its 100 % R_g tested gate resistance (0.5–2.3 Ω) ensures consistent switching behavior across production lots.

The SI1304BDL-T1-GE3 integrates a built-in body diode with reverse recovery time (t_rr = 50–75 ns) and Q_rr = 105–160 nC, supporting synchronous rectification and bidirectional current handling in compact DC-DC converters and USB port power switches.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum drain-source blocking voltage for use in ≤24 V systems with margin.
R_DS(on)	0.270 Ω at V_GS = 4.5 V - Enables <120 mW conduction loss at 0.9 A, critical for thermally constrained layouts.
I_D (continuous)	0.90 A at T_C = 25 °C - Specifies safe steady-state current when mounted on heatsinked copper area.
Q_g	1.8 nC (typ) at V_GS = 4.5 V - Determines gate driver strength requirement for <15 ns turn-on delay.
R_thJA	315 °C/W (typ) - Limits usable power dissipation to ~340 mW at 25 °C ambient on standard FR4.
V_GS(th)	0.6–1.3 V - Ensures reliable turn-on with 2.5 V I/O without level-shifting circuitry.
t_rr	50–75 ns - Supports operation up to ~2 MHz in non-synchronous buck topologies with minimal switching loss penalty.

Pinout & Package

SC-70 (3-lead) package: ultra-miniature surface-mount outline measuring 2.00 mm × 2.10 mm × 1.00 mm (D × E × A2), optimized for high-density portable electronics. Lead (Pb)-free and halogen-free per IEC 61249-2-21.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Controls channel conduction; requires ≤12 V drive; 100 % R_g tested for predictable switching timing.
2 (S)	Source	Reference node for gate drive and current return path; tied to system ground in low-side switch configuration.
3 (D)	Drain	High-side connection point for load; electrically connected to exposed pad in some variants (not applicable here - SC-70 3-lead has no thermal pad).

Key Features

Feature	Design Value
TrenchFET® architecture	Delivers lowest possible R_DS(on) per die area, enabling 0.270 Ω in SC-70 - 3× lower than planar equivalents at same voltage rating.
100 % R_g tested	Guarantees gate resistance between 0.5–2.3 Ω, eliminating variability in rise/fall times and reducing need for external gate resistors.
Halogen-free construction	Meets IEC 61249-2-21 compliance without compromising thermal or electrical performance in consumer-grade assemblies.
Logic-level gate drive	Operates fully enhanced down to 2.5 V V_GS, allowing direct interface with modern MCU GPIOs without auxiliary level shifters.

Applications

USB Power Switching	Low-Power Load Management
Use Scenario: Controlling power delivery to USB peripherals in portable devices with strict size and thermal constraints. IC Role / Device Role / Timing Role: Low-side load switch enabling/disabling 5 V bus with fast turn-on (<15 ns) and minimal voltage drop. Use Value: 0.270 Ω R_DS(on) limits voltage drop to <243 mV at 0.9 A, preserving USB spec compliance while fitting within 2.1 mm × 2.0 mm board area.	Use Scenario: Enabling/disabling sensor modules or RF transceivers in battery-powered IoT nodes to minimize standby leakage. IC Role / Device Role / Timing Role: High-efficiency power gate with sub-1 µA IDSS and 100 nA IGSS, minimizing quiescent current in sleep mode. Use Value: 1 µA maximum zero-gate-voltage drain current at 30 V ensures <1 µW static power loss, extending battery life in multi-year deployments.
Battery Protection Circuit	Compact DC-DC Converter
Use Scenario: Reverse-polarity and overcurrent protection in single-cell Li-ion charger paths where board space is limited. IC Role / Device Role / Timing Role: Back-to-back configured N-channel switch providing bidirectional blocking and controlled turn-off during fault conditions. Use Value: Body diode forward voltage of 0.8–1.2 V at 0.28 A enables efficient passive reverse-current blocking without added Schottky diodes.	Use Scenario: Synchronous rectifier in 3.3 V output buck converter for wearables, replacing discrete diodes to improve efficiency. IC Role / Device Role / Timing Role: Secondary-side switch leveraging low Q_g (1.8 nC) and fast t_rr (50–75 ns) for clean commutation at 1–2 MHz. Use Value: 0.385 Ω R_DS(on) at 2.5 V gate drive allows full enhancement from controller's 2.5 V PWM output, eliminating gate driver IC.

USB Power Switching

Low-Power Load Management

Use Scenario: Controlling power delivery to USB peripherals in portable devices with strict size and thermal constraints.

IC Role / Device Role / Timing Role: Low-side load switch enabling/disabling 5 V bus with fast turn-on (<15 ns) and minimal voltage drop.

Use Value: 0.270 Ω R_DS(on) limits voltage drop to <243 mV at 0.9 A, preserving USB spec compliance while fitting within 2.1 mm × 2.0 mm board area.

Use Scenario: Enabling/disabling sensor modules or RF transceivers in battery-powered IoT nodes to minimize standby leakage.

IC Role / Device Role / Timing Role: High-efficiency power gate with sub-1 µA IDSS and 100 nA IGSS, minimizing quiescent current in sleep mode.

Use Value: 1 µA maximum zero-gate-voltage drain current at 30 V ensures <1 µW static power loss, extending battery life in multi-year deployments.

Battery Protection Circuit

Compact DC-DC Converter

Use Scenario: Reverse-polarity and overcurrent protection in single-cell Li-ion charger paths where board space is limited.

IC Role / Device Role / Timing Role: Back-to-back configured N-channel switch providing bidirectional blocking and controlled turn-off during fault conditions.

Use Value: Body diode forward voltage of 0.8–1.2 V at 0.28 A enables efficient passive reverse-current blocking without added Schottky diodes.

Use Scenario: Synchronous rectifier in 3.3 V output buck converter for wearables, replacing discrete diodes to improve efficiency.

IC Role / Device Role / Timing Role: Secondary-side switch leveraging low Q_g (1.8 nC) and fast t_rr (50–75 ns) for clean commutation at 1–2 MHz.

Use Value: 0.385 Ω R_DS(on) at 2.5 V gate drive allows full enhancement from controller's 2.5 V PWM output, eliminating gate driver IC.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel low-voltage MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN2004LK-7	R_DS(on) = 0.22 Ω @ 4.5 V, but SC-70-6 package with 4 drain leads; R_thJA = 212 °C/W vs. 315 °C/W for SI1304BDL-T1-GE3.	Higher current capability (1.2 A) and better thermal performance, but requires 6-pin layout and larger footprint.	Select DMN2004LK-7 only if board area allows SC-70-6 and >1 A load current is required.
AO3400	R_DS(on) = 0.042 Ω @ 4.5 V, but SOT-23 package; V_GS(th) = 0.8–1.5 V; Q_g = 7.5 nC - 4× higher than SI1304BDL-T1-GE3.	Lower on-resistance supports higher currents, but slower switching and larger package (2.9 mm × 1.6 mm vs. 2.1 mm × 2.0 mm).	Choose AO3400 when conduction loss dominates design and board space permits SOT-23; avoid when fast switching or minimal footprint is critical.

Compared with DMN2004LK-7 and AO3400, the SI1304BDL-T1-GE3 uniquely balances ultra-small SC-70-3 footprint, logic-level gate drive, and moderate R_DS(on) - making it optimal for space-limited 0.5–0.9 A switching where thermal budget is managed via layout rather than package enhancement.

Availability

SI1304BDL-T1-GE3 is available at Aetrix Electronics and suitable for USB power switching, battery protection circuits, low-power load management, and compact DC-DC converter designs requiring stable component supply and long-term manufacturability.

Supply support for SI1304BDL-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on reliability, miniaturization, and energy efficiency.

The SI1304BDL-T1-GE3 belongs to Vishay's LITTLE FOOT® SC-70 MOSFET family, engineered specifically for ultra-compact, low-power switching applications in portable and battery-operated electronics where board area and thermal envelope are severely constrained.

FAQ

What is the maximum continuous drain current rating for SI1304BDL-T1-GE3 at 70 °C case temperature?

The SI1304BDL-T1-GE3 supports 0.71 A continuous drain current at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the SC-70 package under elevated ambient or board-conducted heating conditions, and must be applied when calculating safe operating area in real-world layouts.

Does SI1304BDL-T1-GE3 have a guaranteed gate resistance specification?

Yes, the SI1304BDL-T1-GE3 undergoes 100 % R_g testing per datasheet Document Number 73480, with gate resistance guaranteed between 0.5 Ω and 2.3 Ω at f = 1 MHz. This ensures consistent switching speed and eliminates post-manufacturing screening for gate drive timing variation.

Can SI1304BDL-T1-GE3 be driven directly by a 2.5 V microcontroller GPIO?

Yes, the SI1304BDL-T1-GE3 has a gate threshold voltage range of 0.6–1.3 V and achieves R_DS(on) = 0.385 Ω at V_GS = 2.5 V, enabling full enhancement from standard 2.5 V logic outputs without external level shifting or gate boosting circuitry.

What is the thermal resistance from junction to ambient for SI1304BDL-T1-GE3 on a standard test board?

The SI1304BDL-T1-GE3 has a typical junction-to-ambient thermal resistance (R_thJA) of 315 °C/W when mounted on a 1" × 1" FR4 board with copper on both sides, per datasheet note b. The maximum value is 375 °C/W, defining worst-case thermal design margin for power dissipation calculations.

Is SI1304BDL-T1-GE3 suitable for use as a synchronous rectifier in a 1 MHz DC-DC converter?

Yes, the SI1304BDL-T1-GE3 is suitable due to its 50–75 ns body diode reverse recovery time (t_rr) and low total gate charge (1.8 nC typ at 4.5 V), enabling clean commutation and minimal switching loss at 1 MHz - provided gate drive strength meets dV/dt requirements and layout minimizes parasitic inductance.

SI1304BDL-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: SC-70, SOT-323

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 900mA (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 2.5V, 4.5V

Rds On (Max) @ Id, Vgs:: 270mOhm @ 900mA, 4.5V

Vgs(th) (Max) @ Id:: 1.3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 2.7 nC @ 4.5 V

Vgs (Max):: ±12V

Input Capacitance (Ciss) (Max) @ Vds:: 100 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 340mW (Ta), 370mW (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SC-70-3

SI1304BDL-T1-GE3 FAQ

1.How can I place an order for SI1304BDL-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI1304BDL-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI1304BDL-T1-GE3 reliable?

The price and inventory of SI1304BDL-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI1304BDL-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SI1304BDL-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI1304BDL-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI1304BDL-T1-GE3?

SI1304BDL-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI1304BDL-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI1304BDL-T1-GE3?

For technical support, including SI1304BDL-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI1304BDL-T1-GE3 requirements.

6.How does Aetrix verify that SI1304BDL-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SI1304BDL-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI1304BDL-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SI1304BDL-T1-GE3?

All SI1304BDL-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI1304BDL-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI1304BDL-T1-GE3 part is unused and in its original packaging.

Return procedure for SI1304BDL-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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