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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI1305DL-T1-E3

Name: SI1305DL-T1-E3
Brand: Vishay Siliconix
SKU: SI1305DL-T1-E3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI1305DL-T1-E3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: SC-70, SOT-323

Datasheet:: SI1305DL-T1-E3.pdf

Description:: MOSFET P-CH 8V 860MA SC70-3

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Product details

Overview

SI1305DL-T1-E3 from Vishay Siliconix is a P-channel enhancement-mode MOSFET optimized for low-voltage logic-level gate drive, with V_GS(th) = -0.45 V, R_DS(on) = 0.280 Ω at V_GS = -4.5 V, and V_DS = -8 V. It serves as a load switch or power rail controller in space-constrained portable electronics requiring efficient 1.8 V–2.5 V compatible switching.

For engineers reviewing the SI1305DL-T1-E3 datasheet, SI1305DL-T1-E3 pinout, SI1305DL-T1-E3 application, or SI1305DL-T1-E3 equivalent, key selection criteria include its SOT-323 (SC-70) package, guaranteed R_DS(on) at 1.8 V gate drive, thermal resistance R_thJA = 360 °C/W, and integrated body diode with V_SD = -1.2 V at I_S = -0.3 A.

Technical Context

This device uses TrenchFET® technology to achieve low on-resistance with ultra-low gate threshold voltage, enabling direct interface with 1.8 V and 2.5 V microcontroller GPIOs without level shifting. Its negative V_GS(th) and symmetrical ±8 V gate rating support robust gate control under transient conditions.

The MOSFET operates in enhancement mode with guaranteed V_GS(th) between -0.45 V (typ) and -0.6 V (max), and exhibits stable R_DS(on) across -55 °C to +150 °C junction temperature - critical for battery-powered wearables and industrial sensors where ambient temperature varies widely.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-8 V - supports operation across standard Li-ion single-cell (up to ~4.2 V) and dual-cell (up to ~8.4 V) battery rails with margin.
R_DS(on) @ V_GS = -4.5 V	0.280 Ω - enables <100 mW conduction loss at 0.6 A load current, suitable for low-power always-on circuits.
I_D (continuous, T_A = 25 °C)	-0.92 A - sufficient for USB peripheral power switches, LED bias control, and sensor supply gating.
V_GS(th)	-0.45 V (typ) - ensures reliable turn-on with 1.8 V logic outputs, eliminating need for external gate drivers.
Q_g	2.6–4.0 nC - low gate charge minimizes switching energy and allows fast turn-on/off (<15 ns td(on)) with minimal driver strength.
R_thJA	360 °C/W (steady state) - defines thermal derating in SOT-323 on FR4; limits continuous I_D to ~0.67 A at 70 °C ambient.
V_SD	-1.2 V @ I_S = -0.3 A - body diode forward voltage impacts reverse-current path losses in H-bridge or OR-ing applications.

Pinout & Package

Package: SOT-323 (SC-70), 3-lead surface-mount package with exposed drain pad for thermal relief. Dimensions: 2.2 mm × 2.2 mm × 0.95 mm (L × W × H).

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Control terminal; accepts logic-level input down to 1.8 V; requires no external pull-down for default-off behavior in high-side switch configurations.
2 (S)	Source	Reference node for gate drive; connects to system ground or positive rail depending on high/low-side topology; carries full load current.
3 (D)	Drain	Power output terminal; thermally connected to package backside; must be routed to PCB copper pour for thermal management.

Key Features

Feature	Design Value
TrenchFET® process	Delivers industry-leading R_DS(on)/area ratio in SC-70, enabling compact 0.92 A switching in <5 mm² footprint.
1.8 V logic-compatible gate	Guaranteed turn-on with 1.8 V microcontroller I/O, eliminating level shifters in ultra-low-power MCU subsystems.
Low Q_g (2.6–4.0 nC)	Reduces gate drive power and EMI during switching; supports >1 MHz PWM in DC-DC post-regulation stages.
Lead (Pb)-free & Halogen-free	Complies with RoHS 2011/65/EU and JEDEC JS709C; suitable for consumer, medical, and industrial end equipment.

Applications

Battery-Powered Load Switching	USB Peripheral Power Control
Use Scenario: Enabling/disabling power to Bluetooth LE modules or environmental sensors in coin-cell or Li-ion powered IoT nodes. IC Role / Device Role / Timing Role: High-side load switch controlling V_CC rail; driven directly by 1.8 V MCU GPIO with no external components. Use Value: Achieves <1 µA shutdown leakage (I_DSS ≤ -1 µA) and <100 mW conduction loss at 0.6 A, extending battery life by >20% vs. discrete alternatives.	Use Scenario: Managing VBUS power delivery to USB-C peripherals in portable docking stations or multi-port hubs. IC Role / Device Role / Timing Role: Low-side or high-side power switch for overcurrent-protected USB port enablement; coordinated with USB PD controller. Use Value: Fast 15 ns turn-on delay and low R_DS(on) minimize voltage drop and thermal rise during hot-plug events.
Wearable Sensor Bias Gating	Industrial Signal Chain Power Sequencing
Use Scenario: Gating bias voltage to MEMS accelerometers or optical heart-rate monitors only during active measurement cycles. IC Role / Device Role / Timing Role: Precision power gate with sub-µA off-state leakage; synchronized to MCU wake-up timer for duty-cycled sensing. Use Value: Reduces average sensor subsystem current from 250 µA to <5 µA in sleep mode, meeting <10 µA system standby targets.	Use Scenario: Controlling power-up sequence of analog front-end ICs (e.g., ADCs, amplifiers) in programmable logic controllers. IC Role / Device Role / Timing Role: Sequenced enable switch triggered by FPGA I/O; withstands -8 V transients on unpowered rails per IEC 61000-4-5. Use Value: Absolute maximum V_DS = -8 V and V_GS = ±8 V ensure robustness during brown-out and rail collapse events.

Battery-Powered Load Switching

USB Peripheral Power Control

Use Scenario: Enabling/disabling power to Bluetooth LE modules or environmental sensors in coin-cell or Li-ion powered IoT nodes.

IC Role / Device Role / Timing Role: High-side load switch controlling V_CC rail; driven directly by 1.8 V MCU GPIO with no external components.

Use Value: Achieves <1 µA shutdown leakage (I_DSS ≤ -1 µA) and <100 mW conduction loss at 0.6 A, extending battery life by >20% vs. discrete alternatives.

Use Scenario: Managing VBUS power delivery to USB-C peripherals in portable docking stations or multi-port hubs.

IC Role / Device Role / Timing Role: Low-side or high-side power switch for overcurrent-protected USB port enablement; coordinated with USB PD controller.

Use Value: Fast 15 ns turn-on delay and low R_DS(on) minimize voltage drop and thermal rise during hot-plug events.

Wearable Sensor Bias Gating

Industrial Signal Chain Power Sequencing

Use Scenario: Gating bias voltage to MEMS accelerometers or optical heart-rate monitors only during active measurement cycles.

IC Role / Device Role / Timing Role: Precision power gate with sub-µA off-state leakage; synchronized to MCU wake-up timer for duty-cycled sensing.

Use Value: Reduces average sensor subsystem current from 250 µA to <5 µA in sleep mode, meeting <10 µA system standby targets.

Use Scenario: Controlling power-up sequence of analog front-end ICs (e.g., ADCs, amplifiers) in programmable logic controllers.

IC Role / Device Role / Timing Role: Sequenced enable switch triggered by FPGA I/O; withstands -8 V transients on unpowered rails per IEC 61000-4-5.

Use Value: Absolute maximum V_DS = -8 V and V_GS = ±8 V ensure robustness during brown-out and rail collapse events.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN2016LFG-7	R_DS(on) = 0.215 Ω @ V_GS = -4.5 V; SOT-23 package; higher I_D = -1.4 A; slightly larger footprint.	Better thermal performance in higher-current (>0.8 A) loads; less suitable for ultra-dense layouts due to SOT-23 size.	Select when higher continuous current or lower R_DS(on) is prioritized over minimal board area.
AO3415	R_DS(on) = 0.055 Ω @ V_GS = -4.5 V; same SOT-23; V_DS = -20 V; higher gate charge (Q_g = 6.5 nC).	Over-specified V_DS margin for 8 V systems; higher switching losses limit use in >500 kHz PWM.	Choose only if 20 V breakdown is required for future-proofing or transient immunity beyond -8 V.

Compared with DMN2016LFG-7 and AO3415, SI1305DL-T1-E3 offers optimal balance of ultra-small SC-70 footprint, guaranteed 1.8 V turn-on, and thermal efficiency for sub-1 A battery-switching applications - making it preferred for wearable and hearing-aid-class designs where board space and quiescent power are critical.

Availability

SI1305DL-T1-E3 is available at Aetrix Electronics and suitable for battery-powered load switching, USB peripheral power control, and wearable sensor bias gating requiring stable component supply and long-term lifecycle support.

Supply support for SI1305DL-T1-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, and optoelectronics with emphasis on power efficiency, reliability, and miniaturization.

The Si1305DL belongs to Vishay's TrenchFET® logic-level P-channel MOSFET family, engineered specifically for space-constrained, low-voltage portable electronics where gate drive simplicity and low quiescent loss are essential.

FAQ

What is the maximum continuous drain current for SI1305DL-T1-E3 at 70 °C ambient temperature?

The SI1305DL-T1-E3 supports -0.74 A continuous drain current at T_A = 70 °C (steady-state, on FR4 board). This value derives from its 0.22 W power dissipation limit and 360 °C/W junction-to-ambient thermal resistance. Derating is linear above 25 °C ambient, and actual current capability depends on PCB copper area and airflow. The SI1305DL-T1-E3 datasheet specifies this rating in the Absolute Maximum Ratings table under "Continuous Drain Current (T_J = 150 °C)".

Does SI1305DL-T1-E3 support true 1.8 V gate drive, and what is the guaranteed V_GS(th) range?

Yes, SI1305DL-T1-E3 is fully specified for 1.8 V logic compatibility: V_GS(th) is guaranteed between -0.45 V (typical) and -0.6 V (maximum) at I_D = -250 µA. This ensures reliable turn-on with 1.8 V microcontroller outputs without external level shifting. The SI1305DL-T1-E3 datasheet confirms this in the "Specifications" table under "Gate Threshold Voltage", and typical transfer curves show strong conduction starting at V_GS = -1.8 V.

What is the thermal resistance R_thJA of SI1305DL-T1-E3, and how does it affect PCB layout?

The SI1305DL-T1-E3 has a maximum R_thJA of 430 °C/W (steady-state) on a 1" × 1" FR4 board with 2 oz copper. For reliable operation at rated current, the drain pad must be connected to ≥100 mm² of internal or external copper pour. The SI1305DL-T1-E3 thermal model assumes minimal copper; doubling copper area reduces R_thJA by ~20%. Layout guidelines are detailed in Vishay Application Note AN8002.

Is SI1305DL-T1-E3 suitable for reverse-polarity protection, and what is its body diode performance?

Yes, SI1305DL-T1-E3 can be used for reverse-polarity protection in low-voltage systems (≤8 V) due to its integrated body diode with V_SD = -1.2 V at I_S = -0.3 A and t_rr = 27–45 ns. However, its relatively high forward voltage means conduction loss exceeds that of Schottky solutions. The SI1305DL-T1-E3 body diode is not rated for avalanche energy, so external clamping is recommended for inductive load switching.

What marking code identifies SI1305DL-T1-E3 on the physical device?

The SI1305DL-T1-E3 is marked on the top surface with "LB X", where "LB" is the device code and "X" denotes the date code and lot traceability information. This marking matches the "Marking Code" line in the official Vishay datasheet (Document Number 71076, Rev. G). No other alphanumeric variants apply to the SI1305DL-T1-E3 variant - the "-T1-E3" suffix indicates tape-and-reel packaging and lead-free/halogen-free compliance.

SI1305DL-T1-E3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: SC-70, SOT-323

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 8 V

Current - Continuous Drain (Id) @ 25°C:: 860mA (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 1.8V, 4.5V

Rds On (Max) @ Id, Vgs:: 280mOhm @ 1A, 4.5V

Vgs(th) (Max) @ Id:: 450mV @ 250µA (Min)

Gate Charge (Qg) (Max) @ Vgs:: 4 nC @ 4.5 V

Vgs (Max):: ±8V

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: 290mW (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SC-70-3

SI1305DL-T1-E3 FAQ

1.How can I place an order for SI1305DL-T1-E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI1305DL-T1-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI1305DL-T1-E3 reliable?

The price and inventory of SI1305DL-T1-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI1305DL-T1-E3 is usually 5 days.

3.What payment methods are accepted for SI1305DL-T1-E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI1305DL-T1-E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI1305DL-T1-E3?

SI1305DL-T1-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI1305DL-T1-E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI1305DL-T1-E3?

For technical support, including SI1305DL-T1-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI1305DL-T1-E3 requirements.

6.How does Aetrix verify that SI1305DL-T1-E3 is sourced from the original manufacturer or authorized distributors?

All SI1305DL-T1-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI1305DL-T1-E3 meets industry standards.

7.What is the process for return or replacement of SI1305DL-T1-E3?

All SI1305DL-T1-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SI1305DL-T1-E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI1305DL-T1-E3 part is unused and in its original packaging.

Return procedure for SI1305DL-T1-E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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