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Vishay Siliconix SI1305DL-T1-GE3
- Part No.:
- SI1305DL-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- SC-70, SOT-323
- Datasheet:
-
SI1305DL-T1-GE3.pdf
- Description:
- MOSFET P-CH 8V 0.86A SC-70-3
- Quantity:
- Payment:
- Shipping:
Inventory:2,857
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Product details
Overview
SI1305DL-T1-GE3 from Vishay Siliconix is a P-channel enhancement-mode TrenchFET® MOSFET optimized for low-voltage logic-level gate drive, with VGS(th) = -0.45 V, RDS(on) = 0.280 Ω at VGS = -4.5 V, and rated for -8 V VDS. It delivers -0.92 A continuous drain current at TA = 25 °C and is commonly used in load switching for portable battery-powered systems.
For engineers reviewing the SI1305DL-T1-GE3 datasheet, SI1305DL-T1-GE3 pinout, SI1305DL-T1-GE3 application, or SI1305DL-T1-GE3 equivalent, key selection criteria include its 1.8 V logic-compatible gate threshold, SOT-323 (SC-70) footprint, low RDS(on) at low VGS, thermal resistance (RthJA = 375 °C/W), and integrated body diode performance.
Technical Context
This device operates as a single P-channel power switch in surface-mount configuration, requiring negative gate-source voltage for conduction. Its trench-based silicon structure enables stable RDS(on) down to VGS = -1.8 V (0.530 Ω), supporting direct interface with 1.8 V and 2.5 V microcontroller I/Os without level shifting.
The SI1305DL-T1-GE3 integrates a source-drain body diode with VSD = -1.2 V at IS = -0.3 A and exhibits Qg = 4 nC (max), enabling fast switching in low-power DC-DC converter synchronous rectification and reverse-polarity protection circuits.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -8 V - Maximum blocking voltage for low-voltage rail protection and battery-side switching |
| RDS(on) @ VGS = -4.5 V | 0.280 Ω - Enables <100 mW conduction loss at 0.6 A, suitable for space-constrained portable designs |
| ID (continuous, TA = 25 °C) | -0.92 A - Supports typical load currents in USB peripherals, sensor modules, and LED drivers |
| VGS(th) | -0.45 V - Ensures reliable turn-on with 1.8 V logic outputs, eliminating need for external gate drivers |
| Qg (max) | 4 nC - Limits gate drive power and enables efficient PWM operation up to ~1 MHz in low-duty-cycle apps |
| RthJA (steady state) | 430 °C/W - Requires careful PCB copper area design; 1" × 1" FR4 layout yields 360 °C/W per spec |
| VSD @ IS = -0.3 A | -1.2 V - Defines forward drop in reverse-current protection and bidirectional power path applications |
Pinout & Package
Package: SOT-323 (SC-70), 3-lead surface-mount plastic package with standard JEDEC outline; lead (Pb)-free and halogen-free per ordering code -GE3.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Control terminal; accepts logic-level negative voltage to enable channel conduction |
| 2 (S) | Source | Reference node for gate drive; connected to higher potential in high-side switch configurations |
| 3 (D) | Drain | Current output terminal; ties to load or ground depending on circuit topology (e.g., low-side vs. high-side) |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® technology | Delivers lowest RDS(on) in SC-70 package at VGS ≥ -1.8 V, improving efficiency over planar alternatives |
| 1.8 V logic-compatible gate | Guarantees full enhancement at 1.8 V I/O levels, enabling direct MCU control without level-shifting circuitry |
| Low Qg/Qgd ratio | Qgd = 0.5 nC of total Qg = 4 nC (max) - reduces Miller effect, supporting clean switching in compact layouts |
| Integrated body diode | VSD = -1.2 V at -0.3 A ensures predictable reverse conduction in power-path OR-ing and flyback recovery |
| Pb-free and halogen-free (-GE3) | Meets RoHS Directive 2011/65/EU and JEDEC JS709B, supporting environmentally compliant industrial and consumer BOMs |
Applications
| Battery-Powered Load Switching | USB Port Power Control |
|---|---|
|
Use Scenario: Enabling/disabling power to Bluetooth modules or sensors in wearables and IoT edge nodes. IC Role / Device Role: High-side load switch controlling VBAT delivery to downstream circuitry. Use Value: SI1305DL-T1-GE3's -0.45 V VGS(th) ensures full turn-on from 1.8 V MCU GPIO, minimizing quiescent current and leakage. |
Use Scenario: Isolating VBUS from host controller during hot-plug or fault conditions in USB 2.0 peripheral designs. IC Role / Device Role: Reverse-polarity and overcurrent protection switch placed between USB connector and system PMIC. Use Value: With RDS(on) = 0.280 Ω at -4.5 V, SI1305DL-T1-GE3 limits voltage drop to <300 mV at 1 A, preserving USB 2.0 voltage margin. |
| Low-Voltage DC-DC Synchronous Rectifier | Reverse Current Protection |
|
Use Scenario: Replacing Schottky diodes in buck converter output stages for improved efficiency in sub-3.3 V point-of-load regulators. IC Role / Device Role: Synchronous rectifier driven by controller's complementary gate signal. Use Value: SI1305DL-T1-GE3's 4 nC Qg and 20 ns fall time support >500 kHz switching while reducing conduction loss vs. 0.3 V Schottky. |
Use Scenario: Preventing backfeed from backup battery into main supply rail in dual-power systems (e.g., coin-cell + Li-ion). IC Role / Device Role: Ideal diode replacement in series with battery anode to block reverse current. Use Value: SI1305DL-T1-GE3's low RDS(on) (0.380 Ω @ -2.5 V) cuts forward drop to ~250 mV at 650 mA, outperforming discrete diodes. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel logic-level MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMG1012T-7 | RDS(on) = 0.320 Ω @ -4.5 V; slightly higher threshold (-0.7 V typ); same SOT-323 package | Less suitable for 1.8 V drive due to higher VGS(th); requires ≥2.5 V for robust turn-on | Prefer SI1305DL-T1-GE3 when interfacing directly with 1.8 V I/Os; DMG1012T-7 acceptable if gate drive ≥2.5 V available |
| AO3401 | RDS(on) = 0.085 Ω @ -4.5 V; higher ID rating (-4.2 A); SO-23 package (larger footprint) | Not pin-compatible; requires PCB redesign; better for higher-current loads but over-specified for sub-1 A use cases | Select SI1305DL-T1-GE3 for minimal board area and 1.8 V compatibility; AO3401 only where higher current or lower RDS(on) justifies larger package |
Compared with DMG1012T-7 and AO3401, the SI1305DL-T1-GE3 uniquely balances ultra-low gate-threshold, SC-70 footprint, and verified 1.8 V drive capability-making it optimal for space- and voltage-constrained portable power management where pin count and logic compatibility are critical.
Availability
SI1305DL-T1-GE3 is available at Aetrix Electronics and suitable for battery management, USB power delivery, and low-voltage DC-DC converter applications requiring stable component supply and long-term production continuity.
Supply support for SI1305DL-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, optoelectronics, and passive components with emphasis on power efficiency and reliability.
The Si1305DL belongs to Vishay's TrenchFET® logic-level P-channel MOSFET family, engineered specifically for compact, low-voltage power switching in portable and battery-operated electronics.
FAQ
What is the maximum continuous drain current for SI1305DL-T1-GE3 at 70 °C ambient temperature?
The SI1305DL-T1-GE3 supports -0.74 A continuous drain current at TA = 70 °C under steady-state conditions, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the SOT-323 package and must be validated against actual PCB layout and airflow. The SI1305DL-T1-GE3 datasheet confirms this value applies with no heatsink and standard FR4 mounting.
Does SI1305DL-T1-GE3 support 1.8 V logic-level gate drive?
Yes, the SI1305DL-T1-GE3 is explicitly characterized for 1.8 V operation: RDS(on) = 0.530 Ω at VGS = -1.8 V and ID = -0.3 A, and VGS(th) = -0.45 V (typical). This guarantees full enhancement with 1.8 V microcontroller outputs, making SI1305DL-T1-GE3 suitable for direct GPIO control without level shifters.
What is the thermal resistance junction-to-ambient for SI1305DL-T1-GE3 in steady-state operation?
The SI1305DL-T1-GE3 has a maximum steady-state junction-to-ambient thermal resistance (RthJA) of 430 °C/W, with a typical value of 360 °C/W when mounted on a 1" × 1" FR4 board. This parameter directly impacts safe operating area and must be used with power dissipation calculations to ensure TJ remains ≤150 °C in the final design using SI1305DL-T1-GE3.
Is SI1305DL-T1-GE3 pin-compatible with other SOT-323 P-channel MOSFETs?
The SI1305DL-T1-GE3 uses standard SOT-323 (SC-70) pinout: Pin 1 = Gate, Pin 2 = Source, Pin 3 = Drain. While many SOT-323 P-channel MOSFETs share this arrangement, pin compatibility does not guarantee functional equivalence. Always verify RDS(on), VGS(th), and thermal specs before substituting SI1305DL-T1-GE3 in an existing layout.
What is the source-drain diode forward voltage of SI1305DL-T1-GE3?
The SI1305DL-T1-GE3 body diode exhibits VSD = -1.2 V at IS = -0.3 A and VGS = 0 V, as measured per the datasheet's Typical Characteristics section. This forward voltage determines conduction loss in reverse-current paths and influences efficiency in OR-ing and flyback applications using SI1305DL-T1-GE3.
SI1305DL-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- SC-70, SOT-323
- Packaging:
- Cut Tape (CT)
- Product Status:
- Obsolete
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 8 V
- Current - Continuous Drain (Id) @ 25°C:
- 860mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- -
- Rds On (Max) @ Id, Vgs:
- 280mOhm @ 1A, 4.5V
- Vgs(th) (Max) @ Id:
- 450mV @ 250µA (Min)
- Gate Charge (Qg) (Max) @ Vgs:
- 4 nC @ 4.5 V
- Vgs (Max):
- -
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- -
- Power Dissipation (Max):
- 290mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SC-70-3
SI1305DL-T1-GE3 FAQ
1.How can I place an order for SI1305DL-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI1305DL-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI1305DL-T1-GE3 reliable?
The price and inventory of SI1305DL-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI1305DL-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SI1305DL-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI1305DL-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI1305DL-T1-GE3?
SI1305DL-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI1305DL-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI1305DL-T1-GE3?
For technical support, including SI1305DL-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI1305DL-T1-GE3 requirements.
6.How does Aetrix verify that SI1305DL-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SI1305DL-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI1305DL-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SI1305DL-T1-GE3?
All SI1305DL-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI1305DL-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI1305DL-T1-GE3 part is unused and in its original packaging.
Return procedure for SI1305DL-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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