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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI1315DL-T1-GE3

Name: SI1315DL-T1-GE3
Brand: Vishay Siliconix
SKU: SI1315DL-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI1315DL-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: SC-70, SOT-323

Datasheet:: SI1315DL-T1-GE3.pdf

Description:: MOSFET P-CH 8V 900MA SOT323

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Product details

Overview

SI1315DL-T1-GE3 from Vishay Siliconix is a P-channel enhancement-mode TrenchFET® MOSFET in SC-70 (SOT-323) package, rated for -8 V V_DS, 0.336 Ω R_DS(on) at V_GS = -4.5 V, -0.9 A continuous drain current at T_C = 25 °C, 1.7 nC typical total gate charge, and optimized for low-voltage load switching in space-constrained portable electronics.

For engineers reviewing the SI1315DL-T1-GE3 datasheet, SI1315DL-T1-GE3 pinout, SI1315DL-T1-GE3 application, or SI1315DL-T1-GE3 equivalent, this device is selected for compact DC/DC converter high-side switching, battery-powered load isolation, and logic-level gate-driven power control where low gate charge and sub-1-A current handling are critical.

Technical Context

This MOSFET employs trench-gate silicon technology to achieve low on-resistance with minimal gate drive voltage-fully enhanced at V_GS = -4.5 V and functional down to V_GS = -1.8 V. Its negative threshold voltage (-0.4 V to -0.8 V) ensures reliable turn-on with standard logic-level signals in P-channel configurations.

The device integrates a body diode with 14 ns reverse recovery time and -0.8 V to -1.2 V forward voltage at -0.7 A, supporting synchronous rectification and flyback energy management in buck converters and load-switch circuits without external diodes.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-8 V - Maximum drain-source blocking voltage for low-voltage rail protection
R_DS(on)	0.336 Ω at V_GS = -4.5 V - Enables <100 mW conduction loss at 0.5 A load current
I_D (continuous)	-0.9 A at T_C = 25 °C - Suitable for sub-1 A load switching in handheld devices
Q_g	1.7 nC typical - Reduces gate driver power demand and switching losses in high-frequency DC/DC stages
V_GS(th)	-0.4 V to -0.8 V - Ensures robust turn-on with 1.8 V–3.3 V logic outputs
R_thJA	315 °C/W typical - Requires minimal PCB copper area for thermal management in SMT layouts
P_D	0.4 W at T_C = 25 °C - Supports continuous operation in ambient temperatures up to 60 °C with standard FR4

Pinout & Package

SC-70 (SOT-323) plastic surface-mount package, 3-pin, lead (Pb)-free and halogen-free per IEC 61249-2-21. Dimensions: 2.00 mm × 2.10 mm × 0.95 mm (L × W × H), with 0.65 mm lead pitch.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Control terminal; accepts logic-level negative voltage to turn on P-channel device
2 (S)	Source	Reference node for gate drive; connected to higher potential rail in high-side switch configuration
3 (D)	Drain	Switched output terminal; connects to load or downstream circuitry; thermally coupled to PCB via exposed pad (not present in SC-70)

Key Features

Feature	Design Value
TrenchFET® construction	Delivers lowest possible R_DS(on) per unit die area for SC-70 footprint, enabling higher efficiency in miniaturized designs
100 % R_g tested	Ensures consistent gate resistance (1.4–14 Ω) across production lots, critical for predictable switching timing
Halogen-free & RoHS-compliant	Meets environmental compliance requirements for consumer and medical portable equipment without sacrificing performance
Low Q_gd/Q_g ratio	0.4 nC / 1.7 nC supports clean, Miller-resistant turn-off behavior in fast-switching applications

Applications

Smartphone Power Management	USB-C Load Switch
Use Scenario: Isolating backup battery rail during system sleep mode to prevent leakage current. IC Role / Device Role / Timing Role: High-side P-channel load switch controlling VBAT path with enable signal from PMIC. Use Value: 0.336 Ω R_DS(on) limits dropout to <170 mV at 500 mA, preserving battery runtime while meeting 1 µA shutdown leakage spec.	Use Scenario: Enabling/disabling VBUS power delivery to peripheral ports based on enumeration status. IC Role / Device Role / Timing Role: Logic-controlled power switch placed between USB-C controller and port connector. Use Value: 1.7 nC Q_g allows full turn-on in <20 ns with 10 kΩ pull-up, satisfying USB PD 3.0 soft-start timing requirements.
Wearable Sensor Node	Low-Power Buck Converter
Use Scenario: Power gating of BLE radio module during idle intervals to extend coin-cell battery life. IC Role / Device Role / Timing Role: Load switch isolating RF section supply (3.3 V) from main LDO output. Use Value: -0.4 V V_GS(th) guarantees activation with 1.8 V GPIO, eliminating need for level shifter in ultra-low-power MCU domains.	Use Scenario: Synchronous rectifier in 1 MHz, 3.3 V → 1.2 V buck converter for microcontroller core supply. IC Role / Device Role / Timing Role: Low-side switch complementing N-channel high-side FET in synchronous topology. Use Value: 14 ns t_rr and 4 nC Q_rr minimize reverse recovery loss, improving light-load efficiency by >3% versus Schottky diode solution.

Smartphone Power Management

USB-C Load Switch

Use Scenario: Isolating backup battery rail during system sleep mode to prevent leakage current.

IC Role / Device Role / Timing Role: High-side P-channel load switch controlling VBAT path with enable signal from PMIC.

Use Value: 0.336 Ω R_DS(on) limits dropout to <170 mV at 500 mA, preserving battery runtime while meeting 1 µA shutdown leakage spec.

Use Scenario: Enabling/disabling VBUS power delivery to peripheral ports based on enumeration status.

IC Role / Device Role / Timing Role: Logic-controlled power switch placed between USB-C controller and port connector.

Use Value: 1.7 nC Q_g allows full turn-on in <20 ns with 10 kΩ pull-up, satisfying USB PD 3.0 soft-start timing requirements.

Wearable Sensor Node

Low-Power Buck Converter

Use Scenario: Power gating of BLE radio module during idle intervals to extend coin-cell battery life.

IC Role / Device Role / Timing Role: Load switch isolating RF section supply (3.3 V) from main LDO output.

Use Value: -0.4 V V_GS(th) guarantees activation with 1.8 V GPIO, eliminating need for level shifter in ultra-low-power MCU domains.

Use Scenario: Synchronous rectifier in 1 MHz, 3.3 V → 1.2 V buck converter for microcontroller core supply.

IC Role / Device Role / Timing Role: Low-side switch complementing N-channel high-side FET in synchronous topology.

Use Value: 14 ns t_rr and 4 nC Q_rr minimize reverse recovery loss, improving light-load efficiency by >3% versus Schottky diode solution.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET load switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si1305DL-T1-GE3	-12 V V_DS, 0.55 Ω R_DS(on) at -4.5 V, 1.3 nC Q_g	Higher voltage rating but higher on-resistance; better for 9–12 V systems with tighter leakage budgets	Select when system rail exceeds 8 V or when lower gate charge outweighs R_DS(on) penalty
DMN2020LSD-13	-20 V V_DS, 0.22 Ω R_DS(on) at -4.5 V, 2.5 nC Q_g, SOT-23 package	Lower R_DS(on) but larger footprint and higher Q_g; suited for higher-current, less space-constrained designs	Choose when >0.7 A continuous current or <0.3 Ω R_DS(on) is required and board area permits SOT-23

Compared with SI1315DL-T1-GE3, Si1305DL-T1-GE3 trades lower gate charge for reduced voltage margin and higher conduction loss, while DMN2020LSD-13 offers superior on-resistance at the cost of increased switching loss and larger PCB footprint-making SI1315DL-T1-GE3 optimal for 5–8 V, sub-1 A, ultra-compact load switching.

Availability

SI1315DL-T1-GE3 is available at Aetrix Electronics and suitable for smartphone power management, USB-C load switching, and wearable sensor node applications requiring stable component supply, long-term lifecycle support, and RoHS-compliant sourcing.

Supply support for SI1315DL-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, optoelectronics, and resistive components with emphasis on reliability, miniaturization, and efficiency.

The Si13xxDL series targets ultra-compact, low-voltage P-channel switching in portable electronics-designed specifically for load isolation, battery management, and DC/DC converter synchronous rectification where SC-70 footprint and logic-level gate drive are mandatory.

FAQ

What is the maximum continuous drain current rating for SI1315DL-T1-GE3 at 70 °C case temperature?

The SI1315DL-T1-GE3 supports -0.7 A continuous drain current at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the SC-70 package under sustained power dissipation; designers must verify junction temperature using R_thJA = 315 °C/W and actual board layout conditions to ensure TJ remains ≤150 °C.

Does SI1315DL-T1-GE3 require a gate resistor for stable switching in a 1 MHz DC/DC converter?

Yes-while SI1315DL-T1-GE3 has low intrinsic gate resistance (1.4–14 Ω), a small external gate resistor (typically 5–22 Ω) is recommended to dampen ringing and control dV/dt during turn-on/off in high-frequency buck converters. The 1.7 nC Q_g and 0.4 nC Q_gd make it responsive, but uncontrolled edge rates can induce EMI or shoot-through in synchronous topologies.

Can SI1315DL-T1-GE3 be used as a replacement for an N-channel MOSFET in a high-side switch configuration?

No-SI1315DL-T1-GE3 is a P-channel MOSFET and is inherently suited for high-side switching without level-shifting circuitry, unlike N-channel devices which require gate voltage above the source. Using it as a "replacement" for an N-channel part would require redesigning the drive architecture; its correct role is as a direct high-side switch where the source connects to the positive rail.

What is the body diode forward voltage of SI1315DL-T1-GE3 at -0.7 A and 25 °C?

The body diode forward voltage (V_SD) of SI1315DL-T1-GE3 is -0.8 V minimum and -1.2 V maximum at I_F = -0.7 A and T_J = 25 °C. This parameter is critical when the device operates in reverse conduction mode, such as freewheeling paths in buck regulators or back-to-back switch configurations.

Is SI1315DL-T1-GE3 compatible with reflow soldering profiles per JEDEC J-STD-020?

Yes-SI1315DL-T1-GE3 is qualified for lead-free reflow soldering with a peak temperature of 260 °C, as stated in the Absolute Maximum Ratings. It complies with JEDEC J-STD-020 moisture sensitivity level (MSL) 1, meaning unlimited floor life at ≤30 °C/85% RH and no bake requirement prior to assembly.

SI1315DL-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: SC-70, SOT-323

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 8 V

Current - Continuous Drain (Id) @ 25°C:: 900mA (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 1.8V, 4.5V

Rds On (Max) @ Id, Vgs:: 336mOhm @ 800mA, 4.5V

Vgs(th) (Max) @ Id:: 800mV @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 3.4 nC @ 4.5 V

Vgs (Max):: ±8V

Input Capacitance (Ciss) (Max) @ Vds:: 112 pF @ 4 V

FET Feature:: -

Power Dissipation (Max):: 300mW (Ta), 400mW (Tc)

Operating Temperature:: -50°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SC-70-3

SI1315DL-T1-GE3 FAQ

1.How can I place an order for SI1315DL-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI1315DL-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI1315DL-T1-GE3 reliable?

The price and inventory of SI1315DL-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI1315DL-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SI1315DL-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI1315DL-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI1315DL-T1-GE3?

SI1315DL-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI1315DL-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI1315DL-T1-GE3?

For technical support, including SI1315DL-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI1315DL-T1-GE3 requirements.

6.How does Aetrix verify that SI1315DL-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SI1315DL-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI1315DL-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SI1315DL-T1-GE3?

All SI1315DL-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI1315DL-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI1315DL-T1-GE3 part is unused and in its original packaging.

Return procedure for SI1315DL-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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