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Vishay Siliconix SI1330EDL-T1-BE3
- Part No.:
- SI1330EDL-T1-BE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- SC-70, SOT-323
- Datasheet:
-
SI1330EDL-T1-BE3.pdf
- Description:
- MOSFET N-CH 60V 240MA SC70-3
- Quantity:
- Payment:
- Shipping:
Inventory:1,782
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Product details
Overview
SI1330EDL-T1-BE3 from Vishay Siliconix is an N-channel 60 V TrenchFET® power MOSFET in SC-70 (SOT-323) package, rated for 0.25 A continuous drain current at 25 °C, with RDS(on) = 2.5 Ω at VGS = 10 V and 3.0 Ω at VGS = 4.5 V, used as a P-channel driver in notebook PC and server power management circuits.
For engineers reviewing the SI1330EDL-T1-BE3 datasheet, SI1330EDL-T1-BE3 pinout, SI1330EDL-T1-BE3 application, or SI1330EDL-T1-BE3 equivalent, key selection criteria include its low gate threshold voltage (1.0–2.5 V), ESD protection (2000 V HBM), halogen-free construction, and thermal resistance (RthJA = 380 °C/W typical) on standard FR4 PCBs.
Technical Context
This device uses trench-gate silicon technology to achieve enhanced conduction efficiency at low gate drive voltages, supporting logic-level operation down to 3 V. Its 60 V VDS rating and 0.05 Ω·A² figure of merit enable use in high-side switching and level-shifting configurations where compact size and low quiescent current are critical.
The SC-70 (3-lead) package features a single-drain configuration with G-S-D pinout, optimized for surface-mount assembly in space-constrained applications. Thermal performance is characterized by RthJF = 285 °C/W (typical) and RthJA = 380 °C/W (steady-state), validated per JEDEC JESD51-1 on 1" × 1" FR4 board with 2-oz copper.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 60 V - supports DC input rails up to 48 V with margin for transients in portable computing power stages |
| RDS(on) @ VGS = 4.5 V | 3.0 Ω max - enables reliable switching of ≤0.2 A loads with <0.12 W conduction loss at full current |
| ID (continuous, TA = 25 °C) | 0.25 A - suitable for biasing, enable control, and low-current gate driving functions |
| VGS(th) | 1.0–2.5 V - ensures turn-on with standard 3.3 V or 5 V logic outputs without level shifters |
| Qg | 0.6 nC max - minimizes gate drive power and enables fast switching (td(on) = 10 ns typical) in high-frequency control loops |
| ESD Rating | 2000 V HBM - provides robust handling during automated PCB assembly and system integration |
| TJ Range | −55 to +150 °C - qualified for extended temperature operation in industrial and computing environments |
Pinout & Package
SI1330EDL-T1-BE3 is housed in a lead-free, halogen-free SC-70 (SOT-323) package measuring 2.00 mm × 1.25 mm × 0.95 mm (L × W × H), with gull-wing leads and bottom-side thermal pad not present. The package is optimized for reflow soldering and meets IPC/JEDEC J-STD-020 moisture sensitivity level 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Controls channel conduction; requires ≤±20 V drive; 173 Ω internal gate resistance limits ringing |
| 2 (S) | Source | Reference node for gate drive and load return path; tied to system ground in low-side configurations |
| 3 (D) | Drain | High-side output node; connects to load or P-channel gate; carries switched current and dissipates heat via PCB copper |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® Technology | Delivers lower RDS(on) per die area than planar MOSFETs, enabling higher efficiency in miniature packages |
| Logic-Level Gate Drive | Operates fully enhanced at VGS ≥ 3 V, eliminating need for external gate drivers in 3.3 V microcontroller interfaces |
| Halogen-Free Construction | Complies with IEC 61249-2-21, supporting RoHS-compliant and environmentally regulated end equipment |
| ESD Protection | 2000 V HBM rating reduces risk of field failure during handling and board-level testing |
| Low Thermal Resistance | RthJA = 380 °C/W allows 310 mW power dissipation at 25 °C ambient-sufficient for intermittent switching in battery-powered systems |
Applications
| Notebook PC Power Sequencing | Server Voltage Regulator Enable |
|---|---|
Use Scenario: Controlling power-up sequence of multiple rail supplies in ultraportable notebooks using 3.3 V microcontroller GPIOs. IC Role / Device Role / Timing Role: Low-side switch enabling P-channel MOSFET gates to sequence +5 V, +3.3 V, and +1.8 V rails with precise timing margins. Use Value: Enables deterministic power sequencing without external level shifters or dedicated PMICs, reducing BOM count and layout area. | Use Scenario: Enabling high-efficiency multiphase VRMs in 1U rack servers where space and thermal density constrain component selection. IC Role / Device Role / Timing Role: High-side driver for P-channel sync-FETs in buck converter topologies, driven by PWM controller logic outputs. Use Value: Provides fast, low-loss gate drive with minimal gate charge (0.6 nC), improving light-load efficiency and reducing driver-stage losses. |
| USB Port Power Switching | Industrial Sensor Bias Control |
Use Scenario: Implementing overcurrent-protected USB VBUS switching in embedded host controllers with strict size constraints. IC Role / Device Role / Timing Role: Current-limited high-side switch isolating downstream USB peripherals from upstream 5 V supply. Use Value: Supports hot-plug detection and fault recovery via microcontroller-controlled on/off cycling, leveraging low RDS(on) and fast turn-off (tf = 15 ns). | Use Scenario: Providing programmable bias voltage to analog sensor front-ends in condition-monitoring modules operating across −40 to +85 °C. IC Role / Device Role / Timing Role: Precision current source/sink switch regulating sensor excitation current via PWM duty cycle modulation. Use Value: Maintains stable bias under varying supply conditions due to tight VGS(th) distribution (1.0–2.5 V) and low temperature drift. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel low-voltage MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN2004LK-7 | RDS(on) = 2.2 Ω @ 4.5 V; SOT-23 package; higher ID (0.35 A) | Larger footprint; better thermal performance (RthJA = 300 °C/W); suited for higher-current bias rails | Select when >0.25 A continuous current or improved thermal margin is required |
| AO3400 | RDS(on) = 0.042 Ω @ 10 V; SOT-23; higher gate charge (12 nC); not logic-level at 3 V | Requires 5 V gate drive; unsuitable for 3.3 V-only systems; better for high-frequency, high-current switching | Select only if system uses 5 V logic and demands sub-50 mΩ RDS(on) at cost of larger gate drive overhead |
Compared with DMN2004LK-7 and AO3400, SI1330EDL-T1-BE3 offers the smallest footprint (SC-70), lowest gate charge (0.6 nC), and guaranteed 3 V turn-on-making it optimal for ultra-compact, low-power, logic-level–driven switching where board area and drive simplicity are prioritized over raw current capacity.
Availability
SI1330EDL-T1-BE3 is available at Aetrix Electronics and suitable for notebook PC power sequencing, server VRM enable circuits, and USB port power switching requiring stable component supply, long-term lifecycle support, and consistent halogen-free compliance.
Supply support for SI1330EDL-T1-BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, optoelectronics, and passive components with emphasis on power efficiency, miniaturization, and reliability.
The SI1330EDL belongs to Vishay's LITTLE FOOT® SC-70 MOSFET family, designed specifically for space-constrained, low-power signal and power switching applications in portable computing and enterprise infrastructure.
FAQ
What is the maximum continuous drain current for SI1330EDL-T1-BE3 at 70 °C ambient temperature?
The SI1330EDL-T1-BE3 supports 0.20 A continuous drain current at TA = 70 °C, derated from 0.25 A at 25 °C per its thermal resistance profile (RthJA = 380 °C/W). This value assumes mounting on a standard 1" × 1" FR4 board with 2-oz copper and no additional heatsinking. Exceeding this current risks junction temperature exceeding 150 °C under steady-state conditions.
Does SI1330EDL-T1-BE3 support 3.3 V logic-level gate drive?
Yes, SI1330EDL-T1-BE3 is specified for full enhancement at VGS = 3 V, delivering 0.05 A drain current under those conditions. Its gate-threshold voltage range (1.0–2.5 V) ensures reliable turn-on with 3.3 V microcontroller outputs, making it suitable for direct GPIO interfacing without level-shifting circuitry.
What is the thermal resistance from junction to ambient for SI1330EDL-T1-BE3?
The SI1330EDL-T1-BE3 has a typical junction-to-ambient thermal resistance (RthJA) of 380 °C/W under steady-state conditions on a 1" × 1" FR4 board with 2-oz copper. Maximum RthJA is 450 °C/W. This value is measured per JEDEC JESD51-1 and defines the upper bound of power dissipation before thermal shutdown.
Is SI1330EDL-T1-BE3 halogen-free and RoHS-compliant?
Yes, SI1330EDL-T1-BE3 is both halogen-free per IEC 61249-2-21 and compliant with the EU RoHS Directive 2002/95/EC. The "-BE3" suffix explicitly denotes lead-free and halogen-free construction, verified through material declarations and manufacturing process controls at Vishay Siliconix.
What package type and pin configuration does SI1330EDL-T1-BE3 use?
SI1330EDL-T1-BE3 uses the SC-70 (SOT-323) package with three gull-wing leads and a top-view pinout of Gate (Pin 1), Source (Pin 2), Drain (Pin 3). Dimensions are 2.00 mm × 1.25 mm × 0.95 mm, and the package is qualified for reflow soldering per J-STD-020 MSL Level 1.
SI1330EDL-T1-BE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- SC-70, SOT-323
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 240mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- -
- Rds On (Max) @ Id, Vgs:
- 2.5Ohm @ 250mA, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 0.6 nC @ 4.5 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- -
- Power Dissipation (Max):
- 280mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SC-70-3
SI1330EDL-T1-BE3 FAQ
1.How can I place an order for SI1330EDL-T1-BE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI1330EDL-T1-BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI1330EDL-T1-BE3 reliable?
The price and inventory of SI1330EDL-T1-BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI1330EDL-T1-BE3 is usually 5 days.
3.What payment methods are accepted for SI1330EDL-T1-BE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI1330EDL-T1-BE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI1330EDL-T1-BE3?
SI1330EDL-T1-BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI1330EDL-T1-BE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI1330EDL-T1-BE3?
For technical support, including SI1330EDL-T1-BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI1330EDL-T1-BE3 requirements.
6.How does Aetrix verify that SI1330EDL-T1-BE3 is sourced from the original manufacturer or authorized distributors?
All SI1330EDL-T1-BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI1330EDL-T1-BE3 meets industry standards.
7.What is the process for return or replacement of SI1330EDL-T1-BE3?
All SI1330EDL-T1-BE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI1330EDL-T1-BE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI1330EDL-T1-BE3 part is unused and in its original packaging.
Return procedure for SI1330EDL-T1-BE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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