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Vishay Siliconix SI1330EDL-T1-E3
- Part No.:
- SI1330EDL-T1-E3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- SC-70, SOT-323
- Datasheet:
-
SI1330EDL-T1-E3.pdf
- Description:
- MOSFET N-CH 60V 240MA SC70-3
- Quantity:
- Payment:
- Shipping:
Inventory:26,149
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Product details
Overview
SI1330EDL-T1-E3 from Vishay Siliconix is a N-channel 60 V (D-S) TrenchFET® power MOSFET in SC-70 (SOT-323) package, rated for 0.25 A continuous drain current at 25 °C, with RDS(on) = 2.5 Ω at VGS = 10 V and 3.0 Ω at VGS = 4.5 V, used as a P-channel driver in notebook PC and server power management circuits.
For engineers reviewing the SI1330EDL-T1-E3 datasheet, SI1330EDL-T1-E3 pinout, SI1330EDL-T1-E3 application, or SI1330EDL-T1-E3 equivalent, key selection criteria include low-voltage gate drive capability (3 V threshold), ESD protection (2000 V), RoHS/halogen-free compliance, and thermal performance on FR4 boards with limited footprint.
Technical Context
This device operates as a low-side switching element with a 60 V VDS rating, 2.0 V typical gate-threshold voltage (VGS(th)), and guaranteed 2000 V HBM ESD protection. Its trench-based silicon structure enables stable RDS(on) down to VGS = 3 V, supporting logic-level drive from 3.3 V microcontrollers.
The SC-70 (SOT-323) 3-lead package delivers 380 °C/W maximum junction-to-ambient thermal resistance under steady-state conditions on FR4, with drain-source diode forward voltage of 0.83–1.2 V at IS = 0.23 A, enabling use in compact DC-DC converter synchronous rectification and load-switching topologies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 60 V - supports input rails up to 48 V systems with margin |
| RDS(on) @ VGS = 10 V | 2.5 Ω max - ensures <125 mW conduction loss at 0.25 A |
| RDS(on) @ VGS = 4.5 V | 3.0 Ω max - compatible with 3.3 V GPIO or level-shifted drivers |
| ID (continuous, TA = 25 °C) | 0.25 A - suitable for low-power enable/control switching |
| VGS(th) | 1.0–2.5 V - enables reliable turn-on with 3 V logic signals |
| Qg | 0.6 nC max - allows fast switching with minimal gate drive power |
| TJ range | −55 to +150 °C - qualified for industrial and computing environments |
Pinout & Package
SC-70 (SOT-323) 3-lead surface-mount package with 1.8 mm × 2.1 mm footprint, 0.9–1.1 mm height, and Alloy 42 leadframe; optimized for automated placement and reflow on standard FR4 PCBs.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Control terminal accepting 0–20 V gate-source bias; requires no external pull-down for default-off behavior |
| 2 (S) | Source | Reference node for gate drive and current return path; tied to system ground in low-side switch configuration |
| 3 (D) | Drain | High-side connection point for load; internally connected to source-drain body diode cathode |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® technology | Enables low RDS(on) at low VGS, reducing gate drive complexity in space-constrained designs |
| 2000 V HBM ESD protection | Eliminates need for external ESD clamps in handling-sensitive portable electronics assembly |
| RoHS and halogen-free compliant | Meets IPC-1752A material declaration requirements for green electronics manufacturing |
| SC-70 (SOT-323) package | 0.9 mm profile and 3.8 mm² footprint support ultra-thin notebook and server board stacking |
| Specified RDS(on) at VGS = 3 V | Guarantees functional switching with 3.3 V logic without level-shifting circuitry |
Applications
| Notebook PC Power Sequencing | Server VRM Enable Control |
|---|---|
|
Use Scenario: Enabling/disabling auxiliary power rails during boot-up and sleep transitions in thin-and-light notebooks. IC Role / Device Role / Timing Role: Low-side load switch controlling 5 V or 3.3 V always-on domain power delivery. Use Value: 0.25 A rating and 3 V gate drive compatibility allow direct MCU GPIO control without buffer stages. |
Use Scenario: Activating secondary voltage regulator modules (VRMs) in multi-rail server motherboards based on PMBus commands. IC Role / Device Role / Timing Role: High-reliability enable switch placed between VRM EN pin and system controller. Use Value: 60 V VDS rating prevents failure during transient overvoltage events on control lines. |
| USB Port Power Switching | Embedded Controller Reset Management |
|
Use Scenario: Providing overcurrent-protected 5 V power to USB Type-A ports in docking stations and mini-PCs. IC Role / Device Role / Timing Role: Current-limited load switch with integrated body diode for reverse-current blocking. Use Value: 0.83–1.2 V VSD ensures minimal forward drop while preventing backfeed from downstream devices. |
Use Scenario: Isolating reset signal paths between baseboard management controller (BMC) and host processor during firmware updates. IC Role / Device Role / Timing Role: Signal-level pass gate for active-low reset assertion with controlled rise/fall timing. Use Value: 3.8 ns typical turn-on time and 12.8 ns turn-off time support precise reset pulse width control. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel low-voltage power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN2004LK-7 | RDS(on) = 1.8 Ω @ VGS = 4.5 V; SOT-23 package; higher ID = 0.35 A | Larger footprint (2.9 mm × 1.6 mm) and 0.5 mm greater height limit use in ultra-thin profiles | Preferred when lower on-resistance and higher current headroom are required and board space permits |
| AO3400 | RDS(on) = 0.028 Ω @ VGS = 10 V; SOT-23; 5.7 A rating; no 3 V drive spec | Not characterized for logic-level operation below 4.5 V - unsuitable for 3.3 V GPIO direct drive | Select only if gate drive is ≥4.5 V and thermal design accommodates higher power dissipation |
Compared with DMN2004LK-7 and AO3400, the SI1330EDL-T1-E3 offers the smallest form factor and verified 3 V gate drive capability, making it optimal for space- and voltage-constrained enable/switching functions where sub-0.3 A current and <2.5 Ω RDS(on) are sufficient.
Availability
SI1330EDL-T1-E3 is available at Aetrix Electronics and suitable for notebook PC power sequencing, server VRM enable control, and USB port power switching requiring stable component supply across high-mix, low-volume production runs.
Supply support for SI1330EDL-T1-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors and passive components, specializing in high-reliability power MOSFETs, diodes, and optoelectronics for industrial, computing, and automotive markets.
The Si1330EDL series belongs to Vishay's LITTLE FOOT® SC-70 MOSFET family, engineered for ultra-compact load switching in portable and dense computing systems where board area and profile are critical constraints.
FAQ
What is the maximum continuous drain current for SI1330EDL-T1-E3 at 70 °C ambient temperature?
The SI1330EDL-T1-E3 supports 0.20 A continuous drain current at TA = 70 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the SC-70 package on standard FR4; actual usable current depends on PCB copper area and airflow. The SI1330EDL-T1-E3 must be operated within this limit to maintain junction temperature ≤150 °C.
Does SI1330EDL-T1-E3 have a built-in body diode, and what is its forward voltage?
Yes, the SI1330EDL-T1-E3 integrates a source-drain body diode with forward voltage VSD = 0.83–1.2 V at IS = 0.23 A and VGS = 0 V. This diode enables bidirectional current flow in certain topologies and provides reverse-current blocking in load-switch applications. The SI1330EDL-T1-E3 datasheet confirms this parameter under Typical Characteristics on page 3.
Is SI1330EDL-T1-E3 suitable for driving a 3.3 V logic-level signal directly from a microcontroller GPIO?
Yes - the SI1330EDL-T1-E3 has a guaranteed VGS(th) range of 1.0–2.5 V and specified RDS(on) = 3.0 Ω at VGS = 4.5 V and 8.0 Ω at VGS = 3 V, enabling reliable turn-on with 3.3 V GPIO outputs. No level shifter is needed, making the SI1330EDL-T1-E3 ideal for direct interface with modern low-voltage MCUs in compact systems.
What is the thermal resistance from junction to ambient (RθJA) for SI1330EDL-T1-E3 under steady-state conditions?
The SI1330EDL-T1-E3 has a maximum steady-state junction-to-ambient thermal resistance of 450 °C/W, with a typical value of 380 °C/W, measured on a 1" × 1" FR4 board with copper on both sides. This value assumes standard mounting per Vishay Application Note AN813; reducing RθJA further requires larger copper pours or thermal vias - the SI1330EDL-T1-E3 does not support enhanced thermal footprints like 6-pin SC-70 variants.
How is the marking code structured on the SI1330EDL-T1-E3 package?
The SI1330EDL-T1-E3 uses a top-marking code "KD" followed by two alphanumeric characters (e.g., "KDXX") indicating lot traceability and date code. Per Vishay document 72861, "KD" identifies the Si1330EDL device, while "XX" and "YY" denote wafer lot and assembly date respectively. This marking appears on the top surface of the SC-70 package and is visible under 20× magnification - no laser etching or secondary labeling is applied to the SI1330EDL-T1-E3.
SI1330EDL-T1-E3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- SC-70, SOT-323
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 240mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 3V, 10V
- Rds On (Max) @ Id, Vgs:
- 2.5Ohm @ 250mA, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 0.6 nC @ 4.5 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- -
- Power Dissipation (Max):
- 280mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SC-70-3
SI1330EDL-T1-E3 FAQ
1.How can I place an order for SI1330EDL-T1-E3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI1330EDL-T1-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI1330EDL-T1-E3 reliable?
The price and inventory of SI1330EDL-T1-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI1330EDL-T1-E3 is usually 5 days.
3.What payment methods are accepted for SI1330EDL-T1-E3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI1330EDL-T1-E3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI1330EDL-T1-E3?
SI1330EDL-T1-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI1330EDL-T1-E3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI1330EDL-T1-E3?
For technical support, including SI1330EDL-T1-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI1330EDL-T1-E3 requirements.
6.How does Aetrix verify that SI1330EDL-T1-E3 is sourced from the original manufacturer or authorized distributors?
All SI1330EDL-T1-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI1330EDL-T1-E3 meets industry standards.
7.What is the process for return or replacement of SI1330EDL-T1-E3?
All SI1330EDL-T1-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SI1330EDL-T1-E3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI1330EDL-T1-E3 part is unused and in its original packaging.
Return procedure for SI1330EDL-T1-E3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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