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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI1400DL-T1-E3

Name: SI1400DL-T1-E3
Brand: Vishay Siliconix
SKU: SI1400DL-T1-E3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI1400DL-T1-E3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: 6-TSSOP, SC-88, SOT-363

Datasheet:: SI1400DL-T1-E3.pdf

Description:: MOSFET N-CH 20V 1.6A SC70-6

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Product details

Overview

SI1400DL-T1-E3 from Vishay Siliconix is an N-channel 20 V TrenchFET® power MOSFET rated for 4.5 V gate drive, with R_DS(on) = 0.150 Ω at V_GS = 4.5 V and I_D = 1.7 A, housed in a 6-lead SOT-363 (SC-70) package. It serves as a low-side load switch in space-constrained DC-DC converters and portable power management circuits.

For engineers reviewing the SI1400DL-T1-E3 datasheet, SI1400DL-T1-E3 pinout, SI1400DL-T1-E3 application, or SI1400DL-T1-E3 equivalent, key selection criteria include its 2.5 V logic-compatible threshold voltage, 0.123 Ω typical on-resistance, integrated body diode with 0.78 V forward drop, and RoHS-compliant, halogen-free construction per IEC 61249-2-21.

Technical Context

This device uses trench-based silicon process technology to achieve low R_DS(on) at low gate voltages, enabling efficient switching in battery-powered systems where 3.3 V or lower microcontroller GPIOs drive the gate directly. Its 20 V V_DS rating supports input rails up to 16 V with margin, and the 1.7 A continuous drain current is validated at T_A = 25 °C with derating to 1.2 A at 85 °C.

The SOT-363 package integrates three drain terminals (pins 1, 2, 4), one source (pin 6), and one gate (pin 3), optimizing thermal path to PCB via multiple drain leads. The body diode exhibits t_rr = 30–50 ns under IF = 0.8 A and dI/dt = 100 A/µs, supporting synchronous rectification in high-frequency buck stages.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	20 V - Maximum blocking voltage for use in ≤16 V nominal input systems with safety margin
R_DS(on) @ V_GS = 4.5 V	0.150 Ω max - Enables <120 mW conduction loss at 1.7 A DC load current
I_D (continuous, T_A = 25 °C)	1.7 A - Supports compact load-switch designs without external heatsinking
V_GS(th)	0.6 V typ - Ensures reliable turn-on with 2.5 V logic-level drivers
Q_g	2.1–4.0 nC - Low gate charge enables fast switching with minimal driver strength requirement
P_D (T_A = 25 °C)	0.625 W - Limits maximum steady-state power dissipation on standard FR4 PCB
t_r/t_f	30–50 ns / 8–15 ns - Supports >5 MHz switching in optimized layouts

Pinout & Package

SOT-363 (SC-70) 6-lead surface-mount package with exposed drain pads for enhanced thermal performance; footprint compatible with JEDEC MO-203-AB.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 4	Drain (D)	Three parallel drain connections reduce package inductance and improve thermal spreading to PCB copper
3	Gate (G)	Control terminal; requires no external pull-down resistor due to low I_GSS (±100 nA)
6	Source (S)	Power return node; referenced to system ground in low-side switch configuration
5	Drain (D)	Fifth drain terminal - electrically identical to pins 1, 2, 4; increases current-carrying capacity

Key Features

Feature	Design Value
TrenchFET® architecture	Delivers 0.123 Ω typical R_DS(on) at 4.5 V, reducing conduction losses by ≥25% vs. planar MOSFETs in same package
2.5 V logic-rated gate	Guarantees turn-on with 2.5 V microcontroller outputs, eliminating level-shifter circuitry
Halogen-free & RoHS-compliant	Meets IEC 61249-2-21 and Directive 2002/95/EC - required for consumer electronics export compliance
Low Q_gd/Q_g ratio	0.4 nC / 2.1 nC typical - improves hard-switching efficiency and reduces Miller-induced shoot-through risk

Applications

USB Power Switch	Load Switch in Wearables
Use Scenario: Enabling/disabling 5 V USB VBUS to peripheral modules in smartphones and tablets. IC Role / Device Role / Timing Role: Low-side power switch controlled by baseband processor GPIO. Use Value: 0.150 Ω R_DS(on) limits voltage drop to <0.85 V at 1.7 A, preserving USB 2.0 voltage compliance.	Use Scenario: Isolating battery power from BLE radio, sensors, and display backlight in fitness trackers. IC Role / Device Role / Timing Role: Single-pole, single-throw (SPST) load switch with fast enable/disable response. Use Value: 10 ns turn-on delay and 30 ns rise time support rapid power cycling to extend battery life.
DC-DC Converter Synchronous Rectifier	Hot-Swap Controller Back-End Stage
Use Scenario: Replacing Schottky diode in 3.3 V output stage of 1 MHz buck converter. IC Role / Device Role / Timing Role: Synchronous rectifier driven by controller's complementary gate signal. Use Value: Body diode V_SD = 0.78 V and t_rr = 30 ns minimize reverse recovery loss and conduction loss simultaneously.	Use Scenario: Current-limiting switch in 12 V industrial I/O module with inrush control. IC Role / Device Role / Timing Role: Protected high-side or low-side switch with inherent thermal foldback. Use Value: Junction temperature range of −55 °C to 150 °C ensures operation across extended industrial ambient conditions.

USB Power Switch

Load Switch in Wearables

Use Scenario: Enabling/disabling 5 V USB VBUS to peripheral modules in smartphones and tablets.

IC Role / Device Role / Timing Role: Low-side power switch controlled by baseband processor GPIO.

Use Value: 0.150 Ω R_DS(on) limits voltage drop to <0.85 V at 1.7 A, preserving USB 2.0 voltage compliance.

Use Scenario: Isolating battery power from BLE radio, sensors, and display backlight in fitness trackers.

IC Role / Device Role / Timing Role: Single-pole, single-throw (SPST) load switch with fast enable/disable response.

Use Value: 10 ns turn-on delay and 30 ns rise time support rapid power cycling to extend battery life.

DC-DC Converter Synchronous Rectifier

Hot-Swap Controller Back-End Stage

Use Scenario: Replacing Schottky diode in 3.3 V output stage of 1 MHz buck converter.

IC Role / Device Role / Timing Role: Synchronous rectifier driven by controller's complementary gate signal.

Use Value: Body diode V_SD = 0.78 V and t_rr = 30 ns minimize reverse recovery loss and conduction loss simultaneously.

Use Scenario: Current-limiting switch in 12 V industrial I/O module with inrush control.

IC Role / Device Role / Timing Role: Protected high-side or low-side switch with inherent thermal foldback.

Use Value: Junction temperature range of −55 °C to 150 °C ensures operation across extended industrial ambient conditions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel load switch applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si1401EDL-T1-E3	Same SOT-363 package, but P-channel; V_DS = −20 V, R_DS(on) = 0.175 Ω @ V_GS = −4.5 V	Enables high-side switching without level shifter; requires inverted control logic	Select when high-side topology or supply rail isolation is required
DMN2020LSD-13	Same N-channel function, SOT-26 package; R_DS(on) = 0.145 Ω @ 4.5 V, but higher Q_g = 5.2 nC	Larger footprint; less suitable for ultra-dense wearables	Prefer when board area allows and higher gate drive capability exists

Compared with Si1400DL-T1-E3, Si1401EDL-T1-E3 offers complementary high-side functionality at the cost of logic inversion, while DMN2020LSD-13 trades slightly better R_DS(on) for increased gate drive demand and larger layout footprint - making SI1400DL-T1-E3 optimal for space-constrained, low-voltage, low-power N-channel switching.

Availability

SI1400DL-T1-E3 is available at Aetrix Electronics and suitable for USB power delivery, wearable device load switching, and DC-DC synchronous rectification requiring stable component supply and lead-free compliance.

Supply support for SI1400DL-T1-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, optoelectronics, and passive components with emphasis on power efficiency and reliability.

The Si1400DL series belongs to Vishay's TrenchFET® low-voltage logic-level MOSFET product line, engineered for high-efficiency, space-sensitive power switching in battery-operated and portable electronics.

FAQ

What is the maximum continuous drain current for SI1400DL-T1-E3 at 85 °C ambient?

The SI1400DL-T1-E3 supports 1.0 A continuous drain current at T_A = 85 °C, as specified in the Absolute Maximum Ratings table under "Steady State" conditions. This derating reflects thermal limitations of the SOT-363 package on standard FR4 PCBs and ensures safe operation within the 150 °C maximum junction temperature limit. Always verify actual board-level thermal performance using R_thJA = 220 °C/W (max).

Does SI1400DL-T1-E3 have a built-in ESD protection diode?

No, the SI1400DL-T1-E3 does not integrate dedicated ESD protection circuitry. Its gate oxide is rated for ±12 V V_GS, and gate-body leakage (I_GSS) is limited to ±100 nA at ±12 V - indicating robust intrinsic oxide integrity. System-level ESD protection must be implemented externally per IEC 61000-4-2 requirements when used in handheld or exposed interfaces.

Can SI1400DL-T1-E3 be used in a high-side switch configuration?

The SI1400DL-T1-E3 is an N-channel MOSFET and is not suited for direct high-side switching without a gate driver capable of providing V_GS > V_IN. Its gate threshold voltage (0.6 V typ) and logic-level rating assume source-referenced control. For high-side applications, consider the P-channel Si1401EDL-T1-E3 - a pin-compatible alternative in the same SOT-363 package.

What is the typical gate charge (Q_g) of SI1400DL-T1-E3 at 4.5 V drive?

The SI1400DL-T1-E3 has a typical total gate charge (Q_g) of 2.1 nC at V_DS = 10 V, V_GS = 4.5 V, and I_D = 1.7 A, with a maximum of 4.0 nC. This low Q_g enables fast switching with minimal driver power consumption - critical for high-frequency DC-DC controllers and battery-powered systems where gate drive efficiency matters.

Is SI1400DL-T1-E3 compliant with both RoHS and halogen-free standards?

Yes, SI1400DL-T1-E3 is compliant with the RoHS Directive 2002/95/EC and is halogen-free per IEC 61249-2-21. The "-E3" suffix explicitly denotes lead-free (Pb-free) termination, and Vishay documentation confirms full halogen-free status for this variant - verified in Document Number 71179, Rev. D.

SI1400DL-T1-E3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: 6-TSSOP, SC-88, SOT-363

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 1.6A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 2.5V, 4.5V

Rds On (Max) @ Id, Vgs:: 150mOhm @ 1.7A, 4.5V

Vgs(th) (Max) @ Id:: 600mV @ 250µA (Min)

Gate Charge (Qg) (Max) @ Vgs:: 4 nC @ 4.5 V

Vgs (Max):: ±12V

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: 568mW (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SC-70-6

SI1400DL-T1-E3 FAQ

1.How can I place an order for SI1400DL-T1-E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI1400DL-T1-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI1400DL-T1-E3 reliable?

The price and inventory of SI1400DL-T1-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI1400DL-T1-E3 is usually 5 days.

3.What payment methods are accepted for SI1400DL-T1-E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI1400DL-T1-E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI1400DL-T1-E3?

SI1400DL-T1-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI1400DL-T1-E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI1400DL-T1-E3?

For technical support, including SI1400DL-T1-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI1400DL-T1-E3 requirements.

6.How does Aetrix verify that SI1400DL-T1-E3 is sourced from the original manufacturer or authorized distributors?

All SI1400DL-T1-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI1400DL-T1-E3 meets industry standards.

7.What is the process for return or replacement of SI1400DL-T1-E3?

All SI1400DL-T1-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SI1400DL-T1-E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI1400DL-T1-E3 part is unused and in its original packaging.

Return procedure for SI1400DL-T1-E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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