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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI1400DL-T1-GE3

Name: SI1400DL-T1-GE3
Brand: Vishay Siliconix
SKU: SI1400DL-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI1400DL-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: 6-TSSOP, SC-88, SOT-363

Datasheet:: SI1400DL-T1-GE3.pdf

Description:: MOSFET N-CH 20V 1.6A SC70-6

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Product details

Overview

SI1400DL-T1-GE3 from Vishay Siliconix is an N-channel TrenchFET® power MOSFET rated for 20 V drain-source voltage, 1.7 A continuous drain current at 25 °C, and 0.150 Ω R_DS(on) at V_GS = 4.5 V. It operates with a 2.5 V gate threshold and is optimized for low-voltage load switching in space-constrained portable electronics.

For engineers reviewing the SI1400DL-T1-GE3 datasheet, SI1400DL-T1-GE3 pinout, SI1400DL-T1-GE3 application, or SI1400DL-T1-GE3 equivalent, key selection criteria include its SOT-363 (SC-70-6) package, halogen-free/RoHS-compliant construction, 0.235 Ω R_DS(on) at 2.5 V drive, integrated body diode, and thermal resistance of 220 °C/W (J-A, steady-state).

Technical Context

This device uses trench-gate silicon technology to achieve low on-resistance with logic-level gate drive compatibility. Its 2.5 V rating enables direct interfacing with 2.5 V and 3.3 V microcontroller GPIOs without level-shifting.

The SOT-363 package integrates three drain terminals and one source terminal in a 6-pin footprint, supporting high-current density routing while maintaining low parasitic inductance. The body diode exhibits 0.78 V forward voltage at 0.8 A, suitable for synchronous rectification and reverse polarity protection.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	20 V - Maximum blocking voltage for low-voltage DC distribution and battery-powered systems
R_DS(on) @ 4.5 V	0.150 Ω - Enables ≤250 mW conduction loss at 1.7 A, critical for thermally limited PCB areas
R_DS(on) @ 2.5 V	0.235 Ω - Supports direct drive from 2.5 V logic, eliminating external gate drivers
I_D (continuous, 25 °C)	1.7 A - Sustains typical load currents in USB peripherals, LED drivers, and sensor modules
Q_g	4.0 nC - Low gate charge reduces switching losses and driver power requirements
V_GS(th)	0.6 V (min), 1.0 V (typ) - Ensures reliable turn-on with margin below 2.5 V supply rails
R_thJA (steady-state)	220 °C/W - Defines thermal derating curve for ambient temperatures up to 85 °C

Pinout & Package

SOT-363 (SC-70-6) surface-mount package with exposed drain pads for thermal enhancement and compact 2.1 mm × 2.0 mm footprint.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 4	Drain (D)	Three parallel drain connections reduce current density and improve thermal dissipation via shared copper area
3	Gate (G)	Single control input compatible with 2.5 V/3.3 V logic; 100 nA leakage ensures low standby power
5, 6	Source (S)	Two-source terminals provide low-inductance return path and support bidirectional current flow in H-bridge configurations

Key Features

Feature	Design Value
TrenchFET® architecture	Delivers 0.150 Ω R_DS(on) at 4.5 V in SC-70-6, enabling higher efficiency than planar MOSFETs of same size
Halogen-free & RoHS-compliant	Meets IEC 61249-2-21 and Directive 2002/95/EC for environmentally regulated end equipment
Low V_GS(th) (0.6–1.0 V)	Guarantees turn-on with standard logic outputs, reducing BOM count in battery-operated devices
Integrated body diode	0.78 V V_SD at 0.8 A supports reverse-polarity protection and freewheeling in DC-DC converters

Applications

USB Power Switching	Portable Sensor Node Power Control
Use Scenario: Enabling/disabling 5 V USB VBUS to peripheral ICs in smartphones and tablets. IC Role / Device Role / Timing Role: Load switch controlling power rail sequencing and inrush current limiting. Use Value: 0.150 Ω R_DS(on) minimizes voltage drop and self-heating during sustained 1.5 A loads.	Use Scenario: Isolating battery power from environmental sensors during sleep mode in IoT edge nodes. IC Role / Device Role / Timing Role: Low-leakage high-side switch enabling <1 µA system standby current. Use Value: 1 µA I_DSS at 16 V and 100 nA I_GSS preserve battery life over multi-year deployments.
LED Backlight Dimming	Reverse Polarity Protection
Use Scenario: PWM-controlled current path for white LED strings in handheld displays. IC Role / Device Role / Timing Role: Fast-switching low-side driver with 17 ns t_d(off) and 15 ns t_f. Use Value: 4.0 nC Q_g allows efficient 10–20 kHz dimming without gate driver overhead.	Use Scenario: Preventing damage from incorrect battery insertion in rechargeable medical devices. IC Role / Device Role / Timing Role: Low-V_F series protection element using intrinsic body diode conduction. Use Value: 0.78 V V_SD limits forward drop and power loss compared to discrete Schottky solutions.

USB Power Switching

Portable Sensor Node Power Control

Use Scenario: Enabling/disabling 5 V USB VBUS to peripheral ICs in smartphones and tablets.

IC Role / Device Role / Timing Role: Load switch controlling power rail sequencing and inrush current limiting.

Use Value: 0.150 Ω R_DS(on) minimizes voltage drop and self-heating during sustained 1.5 A loads.

Use Scenario: Isolating battery power from environmental sensors during sleep mode in IoT edge nodes.

IC Role / Device Role / Timing Role: Low-leakage high-side switch enabling <1 µA system standby current.

Use Value: 1 µA I_DSS at 16 V and 100 nA I_GSS preserve battery life over multi-year deployments.

LED Backlight Dimming

Reverse Polarity Protection

Use Scenario: PWM-controlled current path for white LED strings in handheld displays.

IC Role / Device Role / Timing Role: Fast-switching low-side driver with 17 ns t_d(off) and 15 ns t_f.

Use Value: 4.0 nC Q_g allows efficient 10–20 kHz dimming without gate driver overhead.

Use Scenario: Preventing damage from incorrect battery insertion in rechargeable medical devices.

IC Role / Device Role / Timing Role: Low-V_F series protection element using intrinsic body diode conduction.

Use Value: 0.78 V V_SD limits forward drop and power loss compared to discrete Schottky solutions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN2004LK-7	R_DS(on) = 0.125 Ω @ 4.5 V; SOT-563 package (smaller, 5-pin, single drain)	Lacks triple-drain configuration; lower thermal mass limits pulsed current handling	Preferred when board area is constrained and peak current <1.5 A
AO3400	R_DS(on) = 0.042 Ω @ 10 V; requires ≥4.5 V gate drive; SOT-23-3 package	Not logic-level; incompatible with 2.5 V MCU outputs without level shift	Select only if system uses 5 V logic and needs lower R_DS(on) at cost of gate drive complexity

Compared with DMN2004LK-7 and AO3400, the SI1400DL-T1-GE3 uniquely balances logic-level operation, triple-drain thermal robustness, and halogen-free compliance-making it optimal for portable 2.5 V/3.3 V systems requiring reliability and regulatory alignment.

Availability

SI1400DL-T1-GE3 is available at Aetrix Electronics and suitable for USB power management, portable sensor node power control, LED backlight dimming, and reverse polarity protection requiring stable component supply across industrial and consumer production cycles.

Supply support for SI1400DL-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, optoelectronics, and passive components with emphasis on power efficiency and reliability.

The Si1400DL-T1-GE3 belongs to Vishay's TrenchFET® logic-level MOSFET product line, engineered for low-voltage, high-density power switching in battery-powered and space-constrained applications.

FAQ

What is the maximum continuous drain current for SI1400DL-T1-GE3 at 85 °C ambient?

The SI1400DL-T1-GE3 supports 1.0 A continuous drain current at TA = 85 °C, as specified in the Absolute Maximum Ratings table under steady-state conditions. This derating reflects thermal limitations of the SOT-363 package and must be verified against actual PCB copper area and airflow in the final design. The SI1400DL-T1-GE3 datasheet confirms this value with test condition notes referencing surface mounting on a 1" × 1" FR4 board.

Does SI1400DL-T1-GE3 have a guaranteed gate threshold voltage range?

Yes, the SI1400DL-T1-GE3 has a guaranteed V_GS(th) range of 0.6 V (minimum) to 1.0 V (typical) at TJ = 25 °C, measured with V_DS = V_GS and I_D = 250 µA. This specification ensures consistent turn-on behavior across temperature and process variation, and is validated per Vishay document 71179 Rev. D. The SI1400DL-T1-GE3 maintains usable conduction down to 2.5 V gate drive.

Can SI1400DL-T1-GE3 be used in reverse polarity protection circuits?

Yes, the SI1400DL-T1-GE3 can be used for reverse polarity protection by connecting the source to the input and the drain to the load, leveraging its intrinsic body diode. With a forward voltage of 0.78 V at 0.8 A, the SI1400DL-T1-GE3 provides lower conduction loss than many discrete Schottky diodes in the same footprint. Its 20 V V_DS rating supports common 12 V and 5 V input rails.

What is the total gate charge (Q_g) of SI1400DL-T1-GE3 and how does it affect switching performance?

The SI1400DL-T1-GE3 has a maximum total gate charge of 4.0 nC at V_DS = 10 V, V_GS = 4.5 V, and I_D = 1.7 A. This low Q_g enables fast switching transitions-17 ns turn-off delay and 15 ns fall time-with minimal driver strength required. In PWM applications like LED dimming, the SI1400DL-T1-GE3 achieves efficient operation up to 20 kHz without external gate drivers.

Is SI1400DL-T1-GE3 compliant with both RoHS and halogen-free standards?

Yes, the SI1400DL-T1-GE3 is explicitly certified as both RoHS-compliant per Directive 2002/95/EC and halogen-free per IEC 61249-2-21. The "-GE3" suffix denotes lead-free and halogen-free construction, confirmed in Vishay's ordering information and product summary. This dual compliance makes the SI1400DL-T1-GE3 suitable for export-regulated and eco-sensitive applications including medical and consumer electronics.

SI1400DL-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: 6-TSSOP, SC-88, SOT-363

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 1.6A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 2.5V, 4.5V

Rds On (Max) @ Id, Vgs:: 150mOhm @ 1.7A, 4.5V

Vgs(th) (Max) @ Id:: 600mV @ 250µA (Min)

Gate Charge (Qg) (Max) @ Vgs:: 4 nC @ 4.5 V

Vgs (Max):: ±12V

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: 568mW (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SC-70-6

SI1400DL-T1-GE3 FAQ

1.How can I place an order for SI1400DL-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI1400DL-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI1400DL-T1-GE3 reliable?

The price and inventory of SI1400DL-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI1400DL-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SI1400DL-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI1400DL-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI1400DL-T1-GE3?

SI1400DL-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI1400DL-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI1400DL-T1-GE3?

For technical support, including SI1400DL-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI1400DL-T1-GE3 requirements.

6.How does Aetrix verify that SI1400DL-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SI1400DL-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI1400DL-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SI1400DL-T1-GE3?

All SI1400DL-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI1400DL-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI1400DL-T1-GE3 part is unused and in its original packaging.

Return procedure for SI1400DL-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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