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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI1401EDH-T1-BE3

Name: SI1401EDH-T1-BE3
Brand: Vishay Siliconix
SKU: SI1401EDH-T1-BE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI1401EDH-T1-BE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: 6-TSSOP, SC-88, SOT-363

Datasheet:: SI1401EDH-T1-BE3.pdf

Description:: MOSFET P-CH 12V 4A/4A SC70-6

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Product details

Overview

SI1401EDH-T1-BE3 from Vishay Siliconix is a P-channel 12 V (D-S) trench MOSFET in SC-70 (6-lead) package, rated for -4 A continuous drain current at T_J = 150 °C, with R_DS(on) = 0.034 Ω at V_GS = -4.5 V and Q_g = 14.1 nC - optimized for low-voltage load switching in portable electronics.

For engineers reviewing the SI1401EDH-T1-BE3 datasheet, SI1401EDH-T1-BE3 pinout, SI1401EDH-T1-BE3 application, or SI1401EDH-T1-BE3 equivalent, key selection criteria include gate threshold voltage (-0.4 to -1.0 V), body diode forward voltage (-0.85 V), junction-to-foot thermal resistance (34 °C/W), and ESD robustness (1500 V HBM).

Technical Context

This device uses TrenchFET® technology to achieve low on-resistance and fast switching in a miniaturized 6-pin SC-70 package with four parallel drain terminals. Its -12 V V_DS rating and -1.5 V minimum gate drive capability support single-supply operation in battery-powered systems.

The MOSFET features 100 % R_g tested gate resistance (80–840 Ω), guaranteed body diode recovery (t_rr = 27–50 ns, Q_rr = 12–25 nC), and operates across -55 to +150 °C junction temperature range with stable V_GS(th) temperature coefficient of 2.5 mV/°C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-12 V - supports 12 V rail switching without avalanche stress
R_DS(on) @ V_GS = -4.5 V	0.034 Ω - enables <100 mW conduction loss at 4 A load
Q_g	14.1 nC - determines gate drive power and switching speed in PWM control
V_GS(th)	-0.4 to -1.0 V - allows logic-level turn-on from 1.8 V or 2.5 V microcontrollers
T_J Range	-55 to +150 °C - qualified for extended industrial and portable operating environments
R_thJF	34 °C/W (typical) - enables higher power handling via PCB copper thermal path through four drain pins
V_SD	-0.85 V (typical) - reduces reverse conduction loss in synchronous rectification or back-bias protection

Pinout & Package

SC-70 (6-lead) package with copper leadframe, 2.0 mm × 2.1 mm footprint, 0.95 mm height, and four dedicated drain terminals for enhanced thermal and electrical performance.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 4, 6	Drain (D)	Four parallel high-current paths reduce effective R_DS(on) and improve thermal spreading to PCB
3	Gate (G)	Control terminal accepting -4.5 V to -10 V drive; R_g tested 80–840 Ω
5	Source (S)	Reference node for gate drive and load return; forms body diode anode

Key Features

Feature	Design Value
TrenchFET® architecture	Delivers 34% lower R_DS(on) vs. planar P-channel MOSFETs in same SC-70 footprint
Four-drain-terminal layout	Reduces junction-to-foot thermal resistance to 34 °C/W (typical), enabling 1 W dissipation on minimal PCB area
1500 V HBM ESD rating	Eliminates need for external ESD protection in handheld device front-end switches
100 % R_g testing	Ensures consistent gate drive timing and prevents unexpected turn-on during system power-up
Low V_GS(th) dispersion	-0.4 to -1.0 V range guarantees reliable turn-on with 1.8 V I/O microcontrollers without level-shifting

Applications

Cellular Phone Power Management	Digital Still Camera Load Switching
Use Scenario: Battery isolation during USB charging and system sleep states. IC Role / Device Role / Timing Role: P-channel high-side load switch controlling main PMIC input rail. Use Value: Low R_DS(on) minimizes voltage drop and heat generation during 3–4 A charging currents.	Use Scenario: Enabling/disabling flash LED driver and image sensor power domains. IC Role / Device Role / Timing Role: Fast-turning P-channel switch synchronizing with camera shutter timing. Use Value: 14.1 nC Q_g enables sub-1 μs switching, reducing power-up delay between shot commands.
Portable Game Console Battery Protection	GPS Module Power Gating
Use Scenario: Preventing reverse current flow from backup coin cell to main Li-ion battery during low-power mode. IC Role / Device Role / Timing Role: Reverse-polarity protection switch in battery path. Use Value: Integrated body diode with -0.85 V V_SD provides low-loss forward conduction while blocking reverse leakage.	Use Scenario: Cycling GPS RF module power to extend battery life in asset trackers. IC Role / Device Role / Timing Role: Low-quiescent-current enable switch for GNSS receiver IC. Use Value: Gate leakage <±1 μA at ±4.5 V ensures <100 nA standby current, preserving weeks of battery runtime.

Cellular Phone Power Management

Digital Still Camera Load Switching

Use Scenario: Battery isolation during USB charging and system sleep states.

IC Role / Device Role / Timing Role: P-channel high-side load switch controlling main PMIC input rail.

Use Value: Low R_DS(on) minimizes voltage drop and heat generation during 3–4 A charging currents.

Use Scenario: Enabling/disabling flash LED driver and image sensor power domains.

IC Role / Device Role / Timing Role: Fast-turning P-channel switch synchronizing with camera shutter timing.

Use Value: 14.1 nC Q_g enables sub-1 μs switching, reducing power-up delay between shot commands.

Portable Game Console Battery Protection

GPS Module Power Gating

Use Scenario: Preventing reverse current flow from backup coin cell to main Li-ion battery during low-power mode.

IC Role / Device Role / Timing Role: Reverse-polarity protection switch in battery path.

Use Value: Integrated body diode with -0.85 V V_SD provides low-loss forward conduction while blocking reverse leakage.

Use Scenario: Cycling GPS RF module power to extend battery life in asset trackers.

IC Role / Device Role / Timing Role: Low-quiescent-current enable switch for GNSS receiver IC.

Use Value: Gate leakage <±1 μA at ±4.5 V ensures <100 nA standby current, preserving weeks of battery runtime.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel load switch applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si1402EDH-T1-BE3	R_DS(on) = 0.022 Ω @ -4.5 V (lower), but V_DS = -20 V (higher voltage rating)	Better suited for 15–19 V systems; over-spec'd for 12 V portable use	Select if future-proofing for higher bus voltages or tighter R_DS(on) tolerance is required
DMN2023LSD-13	N-channel enhancement MOSFET, requires gate driver; R_DS(on) = 0.023 Ω @ -4.5 V	Requires high-side driver circuitry; not direct replacement due to polarity and topology	Consider only when redesigning for N-channel high-side with charge pump or bootstrap gate drive

Compared with SI1401EDH-T1-BE3, Si1402EDH-T1-BE3 offers lower on-resistance at same voltage but adds cost and voltage margin unnecessary for 12 V systems; DMN2023LSD-13 introduces complexity with gate drive requirements, making it unsuitable as a drop-in alternative despite similar R_DS(on).

Availability

SI1401EDH-T1-BE3 is available at Aetrix Electronics and suitable for cellular phone power management, digital still camera load switching, and portable game console battery protection requiring stable component supply and long-term production continuity.

Supply support for SI1401EDH-T1-BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors and passive components, specializing in high-reliability MOSFETs, diodes, and optoelectronics for demanding industrial and consumer applications.

The SI1401EDH-T1-BE3 belongs to Vishay's LITTLE FOOT® SC-70 P-channel MOSFET family, engineered specifically for space-constrained, battery-operated devices needing ultra-low on-resistance and robust ESD immunity in minimal footprint.

FAQ

What is the maximum continuous drain current rating for SI1401EDH-T1-BE3 at 70 °C case temperature?

The SI1401EDH-T1-BE3 supports -4 A continuous drain current at T_C = 70 °C, as specified in its Absolute Maximum Ratings table. This rating remains unchanged from the 25 °C case condition due to the device's thermal design and copper leadframe construction, which maintains stable R_DS(on) and power handling up to 70 °C ambient with appropriate PCB copper area.

Does SI1401EDH-T1-BE3 require a gate resistor for stable switching in portable applications?

While SI1401EDH-T1-BE3 does not mandate an external gate resistor for basic operation, a 10–100 Ω series resistor is recommended to dampen ringing caused by PCB trace inductance and prevent unintended oscillation during fast edge transitions. The device's 100 % R_g tested internal gate resistance (80–840 Ω) ensures predictable drive behavior, but external tuning optimizes EMI and dv/dt control in compact layouts.

Can SI1401EDH-T1-BE3 be used in place of an N-channel MOSFET for high-side switching without additional circuitry?

Yes - SI1401EDH-T1-BE3 is a P-channel MOSFET designed explicitly for high-side switching without gate boost circuitry. Its -0.4 to -1.0 V V_GS(th) allows direct interface with 1.8 V or 2.5 V GPIOs, eliminating the need for level shifters or charge pumps required by most N-channel alternatives. This simplifies design and reduces bill-of-materials count in space-limited portable systems.

What is the typical body diode reverse recovery time (t_rr) of SI1401EDH-T1-BE3, and how does it affect synchronous rectification?

The SI1401EDH-T1-BE3 exhibits a typical body diode reverse recovery time (t_rr) of 27 ns under IF = -5.5 A and di/dt = 100 A/μs conditions. This fast recovery minimizes switching losses and voltage overshoot during commutation, making the device suitable for moderate-frequency synchronous rectification in DC-DC converters where efficiency above 90 % is critical and layout parasitics are tightly controlled.

Is SI1401EDH-T1-BE3 compliant with lead-free and halogen-free manufacturing standards?

Yes - SI1401EDH-T1-BE3 is lead (Pb)-free and halogen-free, meeting RoHS Directive 2011/65/EU and JEDEC JS709B requirements. The "-BE3" suffix explicitly denotes Vishay's standard lead-free, halogen-free packaging, and the device uses a copper leadframe compatible with standard SnAgCu reflow profiles up to 260 °C peak temperature.

SI1401EDH-T1-BE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: 6-TSSOP, SC-88, SOT-363

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 12 V

Current - Continuous Drain (Id) @ 25°C:: 4A (Ta), 4A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: 34mOhm @ 5.5A, 4.5V

Vgs(th) (Max) @ Id:: 1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 36 nC @ 8 V

Vgs (Max):: ±10V

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: 1.6W (Ta), 2.8W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SC-70-6

SI1401EDH-T1-BE3 FAQ

1.How can I place an order for SI1401EDH-T1-BE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI1401EDH-T1-BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI1401EDH-T1-BE3 reliable?

The price and inventory of SI1401EDH-T1-BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI1401EDH-T1-BE3 is usually 5 days.

3.What payment methods are accepted for SI1401EDH-T1-BE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI1401EDH-T1-BE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI1401EDH-T1-BE3?

SI1401EDH-T1-BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI1401EDH-T1-BE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI1401EDH-T1-BE3?

For technical support, including SI1401EDH-T1-BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI1401EDH-T1-BE3 requirements.

6.How does Aetrix verify that SI1401EDH-T1-BE3 is sourced from the original manufacturer or authorized distributors?

All SI1401EDH-T1-BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI1401EDH-T1-BE3 meets industry standards.

7.What is the process for return or replacement of SI1401EDH-T1-BE3?

All SI1401EDH-T1-BE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI1401EDH-T1-BE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI1401EDH-T1-BE3 part is unused and in its original packaging.

Return procedure for SI1401EDH-T1-BE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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