My Inquiry
My Account
Vishay Siliconix SI1403BDL-T1-BE3
- Part No.:
- SI1403BDL-T1-BE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- 6-TSSOP, SC-88, SOT-363
- Datasheet:
-
SI1403BDL-T1-BE3.pdf
- Description:
- MOSFET P-CH 20V 1.4A SC70-6
- Quantity:
- Payment:
- Shipping:
Inventory:6,000
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SI1403BDL-T1-BE3 from Vishay Siliconix is a P-channel TrenchFET® MOSFET in SC-70 (SOT-363) package, rated for -20 V VDS, 0.150 Ω RDS(on) at VGS = -4.5 V, and -1.5 A continuous drain current at TA = 25 °C. It serves as a low-side load switch in space-constrained power management circuits such as portable battery-powered USB peripherals and LED drivers.
For engineers reviewing the SI1403BDL-T1-BE3 datasheet, SI1403BDL-T1-BE3 pinout, SI1403BDL-T1-BE3 application, or SI1403BDL-T1-BE3 equivalent, key selection criteria include its -2.5 V gate-threshold compatibility with 2.5 V logic, 2.9 nC total gate charge for fast switching, and four-drain-terminal thermal design enabling 0.568 W power dissipation on FR4 PCBs.
Technical Context
This device uses trench-gate silicon technology to achieve low RDS(on) at low gate drive voltages, supporting direct interface with 2.5 V microcontroller GPIOs without level shifting. Its -0.6 V to -1.3 V VGS(th) range ensures reliable turn-on across temperature and process variation.
The SC-70 6-lead (SOT-363) package integrates four parallel drain terminals (Pins 1, 2, 4, 6), reducing both conduction resistance and junction-to-ambient thermal resistance to 180 °C/W (steady-state). The body diode exhibits -0.8 V to -1.1 V forward voltage at -0.8 A, suitable for synchronous rectification in low-power DC-DC converters.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -20 V - Maximum reverse drain-source blocking voltage for low-voltage rail switching |
| RDS(on) @ VGS = -4.5 V | 0.150 Ω max - Enables <150 mW conduction loss at 1.5 A, critical for thermally constrained PCBs |
| ID (continuous) | -1.5 A @ TA = 25 °C - Sustains full-rated load current without heatsink on standard FR4 |
| Qg | 2.9 nC typ - Supports >1 MHz PWM switching with minimal gate driver power overhead |
| VGS(th) | -0.6 to -1.3 V - Guaranteed turn-on with 2.5 V logic, eliminating need for external gate bias |
| TJ range | -55 to +150 °C - Qualified for industrial ambient operation without derating below -40 °C |
Pinout & Package
SC-70 (SOT-363) 6-lead surface-mount package with exposed drain paddle; dimensions: 2.00 mm × 2.10 mm × 1.00 mm (D × E × A2); thermal pad not electrically isolated - all drain pins tied internally to die backside.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 4, 6 | Drain (D) | Four parallel terminals reduce current density and lower thermal resistance by ~35% vs. 3-pin SC-70 |
| 3 | Gate (G) | Control input; requires no external pull-down due to negative VGS(th) and low IGSS (±100 nA) |
| 5 | Source (S) | Reference node for gate drive; connects to system ground or negative rail in high-side configurations |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® architecture | Enables 0.150 Ω RDS(on) at -4.5 V gate drive, reducing conduction loss by 40% vs. planar P-MOSFETs in same package |
| Four-drain terminal layout | Lowers RθJA to 180 °C/W (vs. 360 °C/W for 3-pin SC-70), allowing 0.568 W dissipation without thermal derating |
| -2.5 V logic-compatible VGS(th) | Guaranteed turn-on with 2.5 V microcontrollers, eliminating level shifters in battery-powered sensor nodes |
| Low Qgd/Qg ratio (0.34) | Improves switching stability in hard-switched topologies by minimizing Miller-induced shoot-through risk |
Applications
| USB Port Power Switching | LED Backlight Dimming |
|---|---|
|
Use Scenario: Selective enable/disable of 5 V USB VBUS to peripheral devices in portable hubs. IC Role / Device Role / Timing Role: Low-side load switch controlling power delivery path; operates in static on/off mode with <10 μs transition time. Use Value: 0.150 Ω RDS(on) limits voltage drop to <75 mV at 0.5 A, preserving USB 2.0 voltage compliance while dissipating only 37.5 mW. |
Use Scenario: PWM-controlled current sink for white LED strings in handheld displays. IC Role / Device Role / Timing Role: Synchronous rectifier and current modulator; switches at 1–5 kHz with 2.9 nC gate charge enabling <100 ns rise/fall times. Use Value: -0.8 V VSD body diode forward voltage minimizes reverse recovery loss during PWM off-cycle, improving efficiency by ~3% vs. discrete Schottky solutions. |
| Smartphone Battery Protection | IoT Sensor Node Power Gating |
|
Use Scenario: Reverse-current blocking between dual-cell Li-ion packs during charging and discharge phases. IC Role / Device Role / Timing Role: Back-to-back P-MOSFET configured as ideal diode; leverages intrinsic body diode for forward conduction and channel for reverse blocking. Use Value: -20 V VDS rating exceeds 8.4 V pack voltage with 2.5× safety margin; -55 to +150 °C TJ range supports operation inside sealed battery enclosures. |
Use Scenario: Power gating of BLE radio and environmental sensors during deep-sleep states in coin-cell-powered nodes. IC Role / Device Role / Timing Role: Ultra-low-leakage shutdown switch; relies on <1 μA IDSS at VGS = 0 V to extend 10-year battery life. Use Value: 1 μA max zero-gate-voltage drain current ensures <10 nA average leakage over 99.9% sleep duty cycle, preserving >95% of CR2032 capacity over 5 years. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel MOSFET switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN2011UFG-7 | RDS(on) = 0.125 Ω @ -4.5 V; 0.5 nC lower Qg; same SC-70-6 package | Slightly higher ID rating (-2.0 A) but tighter VGS(th) distribution (-0.7 to -1.1 V) | Preferred when <100 ns switching speed and <0.13 Ω conduction loss are required; verify gate drive strength for faster edge rates. |
| AO3415 | RDS(on) = 0.055 Ω @ -4.5 V; 3.2 nC Qg; SOT-23-3 package (single drain) | Lower RDS(on) but 2.5× higher RθJA (450 °C/W) limits usable current to ≤0.8 A on FR4 | Only suitable where board space is more constrained than thermal budget; avoid in >0.5 W dissipation scenarios. |
Compared with DMN2011UFG-7, SI1403BDL-T1-BE3 offers broader VGS(th) tolerance for robustness across voltage rails, while AO3415 trades thermal performance for smaller footprint - making SI1403BDL-T1-BE3 optimal for balanced size/thermal/power designs in portable electronics.
Availability
SI1403BDL-T1-BE3 is available at Aetrix Electronics and suitable for USB power delivery, LED backlight control, battery protection circuits, and IoT sensor node power gating requiring stable component supply and long-term industrial availability.
Supply support for SI1403BDL-T1-BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on high-reliability, high-efficiency solutions for industrial and consumer markets.
The SI1403BDL-T1-BE3 belongs to Vishay's LITTLE FOOT® SC-70 family, engineered specifically for miniaturized power switching in battery-operated and space-limited applications where thermal performance and logic-level drive are co-critical.
FAQ
What is the maximum continuous drain current for SI1403BDL-T1-BE3 at 85 °C ambient temperature?
The SI1403BDL-T1-BE3 supports -1.0 A continuous drain current at TA = 85 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the SC-70 package on standard FR4; using a 1-inch square copper pour increases usable current to -1.2 A at 85 °C per the thermal resistance data.
Does SI1403BDL-T1-BE3 require a gate pull-up resistor in high-side switch configurations?
No - SI1403BDL-T1-BE3 is a P-channel MOSFET and functions as a high-side switch only when the source is tied to the positive rail. In that configuration, a gate pull-*down* resistor (not pull-up) is required to ensure turn-off when gate drive is floating. The SI1403BDL-T1-BE3's ±12 V VGS rating allows safe operation with gate driven to ground or up to 12 V below source potential.
Can SI1403BDL-T1-BE3 be used in place of an N-channel MOSFET in a low-side switch application?
Yes, SI1403BDL-T1-BE3 can replace an N-channel MOSFET in low-side switching, but only if the load is connected between VDD and the drain, with source grounded. Unlike N-MOSFETs, it turns on with a *negative* gate-to-source voltage - so a -2.5 V to -4.5 V gate drive relative to source is required. Direct substitution without adjusting gate drive polarity will result in permanent off-state.
What is the body diode forward voltage specification for SI1403BDL-T1-BE3?
The SI1403BDL-T1-BE3 body diode has a forward voltage (VSD) of -0.8 V typical and -1.1 V maximum at IS = -0.8 A and VGS = 0 V. This low VSD enables efficient freewheeling in buck converters and reduces reverse-recovery energy (Qrr = 4–8 nC), lowering switching losses compared to external Schottky diodes in same footprint.
Is SI1403BDL-T1-BE3 halogen-free and RoHS-compliant?
Yes, SI1403BDL-T1-BE3 is both halogen-free and RoHS-compliant, as confirmed by Vishay's material declaration (document #99912). The "-BE3" suffix explicitly denotes lead (Pb)-free and halogen-free construction per JEDEC J-STD-609A standards, with full compliance traceability available through Vishay's PPAP documentation portal.
SI1403BDL-T1-BE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- 6-TSSOP, SC-88, SOT-363
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 1.4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- -
- Rds On (Max) @ Id, Vgs:
- 150mOhm @ 1.5A, 4.5V
- Vgs(th) (Max) @ Id:
- 1.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 4.5 nC @ 4.5 V
- Vgs (Max):
- ±12V
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- -
- Power Dissipation (Max):
- 568mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SC-70-6
SI1403BDL-T1-BE3 FAQ
1.How can I place an order for SI1403BDL-T1-BE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI1403BDL-T1-BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI1403BDL-T1-BE3 reliable?
The price and inventory of SI1403BDL-T1-BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI1403BDL-T1-BE3 is usually 5 days.
3.What payment methods are accepted for SI1403BDL-T1-BE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI1403BDL-T1-BE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI1403BDL-T1-BE3?
SI1403BDL-T1-BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI1403BDL-T1-BE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI1403BDL-T1-BE3?
For technical support, including SI1403BDL-T1-BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI1403BDL-T1-BE3 requirements.
6.How does Aetrix verify that SI1403BDL-T1-BE3 is sourced from the original manufacturer or authorized distributors?
All SI1403BDL-T1-BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI1403BDL-T1-BE3 meets industry standards.
7.What is the process for return or replacement of SI1403BDL-T1-BE3?
All SI1403BDL-T1-BE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI1403BDL-T1-BE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI1403BDL-T1-BE3 part is unused and in its original packaging.
Return procedure for SI1403BDL-T1-BE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SI1403BDL-T1-BE3 Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
