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Vishay Siliconix SI1403CDL-T1-GE3
- Part No.:
- SI1403CDL-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- 6-TSSOP, SC-88, SOT-363
- Datasheet:
-
SI1403CDL-T1-GE3.pdf
- Description:
- MOSFET P-CH 20V 2.1A SC70-6
- Quantity:
- Payment:
- Shipping:
Inventory:7,548
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Product details
Overview
SI1403CDL-T1-GE3 from Vishay Siliconix is a P-channel enhancement-mode TrenchFET® MOSFET in SOT-363 (SC-70-6) package, rated for -20 V drain-source voltage, 0.140 Ω RDS(on) at VGS = -4.5 V, -2.1 A continuous drain current at TC = 25 °C, and 4 nC total gate charge - optimized for low-voltage load switching in portable electronics.
For engineers reviewing the SI1403CDL-T1-GE3 datasheet, SI1403CDL-T1-GE3 pinout, SI1403CDL-T1-GE3 application, or SI1403CDL-T1-GE3 equivalent, this device serves as a compact, halogen-free, RoHS-compliant power switch with validated thermal performance on FR4 PCBs and confirmed body diode recovery characteristics for DC/DC converter synchronous rectification and battery protection circuits.
Technical Context
This MOSFET employs trench-gate silicon technology to achieve low on-resistance and fast switching with controlled gate charge (Qg = 4 nC typ., Qgd = 1.4 nC). Its -1.5 V maximum gate threshold voltage ensures reliable turn-on with logic-level gate drive down to -3.6 V, while its -0.83 V typical body diode forward voltage supports efficient reverse conduction in buck converter freewheeling paths.
The SOT-363 package integrates four parallel drain terminals to reduce both RDS(on) and junction-to-foot thermal resistance (RthJF = 115 °C/W typ.), enabling higher power handling than 3-pin SC-70 variants without increasing footprint - critical for space-constrained portable designs requiring stable thermal behavior up to 150 °C junction temperature.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -20 V - Maximum blocking voltage for 3.3 V and 5 V rail load switching |
| RDS(on) | 0.140 Ω at VGS = -4.5 V - Enables <100 mW conduction loss at 1.6 A load current |
| ID (cont.) | -2.1 A at TC = 25 °C - Supports sustained switching of >2 A loads with minimal heatsinking |
| Qg | 4 nC - Reduces gate drive power and enables high-frequency PWM operation up to 1 MHz |
| VGS(th) | -0.6 to -1.5 V - Ensures full enhancement with standard I/O voltages and avoids partial turn-on during power sequencing |
| RthJA | 180 °C/W (typ.) - Allows 694 mW power dissipation on 1" × 1" FR4 board at 25 °C ambient |
| VSD | -0.83 V at IS = -1.3 A - Minimizes freewheeling losses in DC/DC converter output stages |
Pinout & Package
SOT-363 (SC-70-6) surface-mount package with 1.2 mm × 2.1 mm footprint, 0.9–1.1 mm height, and Alloy 42 leadframe; features four parallel drain leads for enhanced current handling and thermal conduction.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Drain | Primary current-carrying terminal; one of four paralleled drain connections for reduced RDS(on) and thermal resistance |
| 2 | Drain | Secondary drain terminal; electrically identical to Pin 1, used to distribute current and heat across PCB copper |
| 3 | Gate | Control input; requires -4.5 V to fully enhance; 100 % Rg tested for consistent switching timing |
| 4 | Drain | Third drain terminal; contributes to 35 % thermal resistance reduction vs. 3-pin SC-70 when using extended pad pattern |
| 5 | Source | Reference node for gate drive and current return path; tied to system ground or negative rail in high-side switch configurations |
| 6 | Drain | Fourth drain terminal; completes quad-drain structure to maximize thermal coupling to PCB copper pour |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® architecture | Delivers 0.140 Ω RDS(on) in ultra-small SOT-363, enabling high-current density in <2.5 mm² area |
| Quad-drain SOT-363 construction | Reduces RthJA by ~50 % vs. 3-pin SC-70 (180 vs. 360 °C/W), supporting >0.6 W dissipation on standard FR4 |
| 100 % Rg tested | Guarantees gate resistance between 2–14 Ω, ensuring predictable turn-on/turn-off timing and EMI control |
| Halogen-free & RoHS-compliant | Meets IEC 61249-2-21 and Directive 2002/95/EC for environmentally regulated consumer and medical portable devices |
| Body diode trr = 12 ns | Enables clean commutation in synchronous buck converters without external Schottky catch diodes |
Applications
| Smartphone Power Management | USB-C Port Protection |
|---|---|
Use Scenario: Load switching for camera module, display backlight, or audio codec power rails in battery-powered smartphones. IC Role / Device Role / Timing Role: High-side P-channel MOSFET controlling 3.3 V or 5 V supply enable with fast turn-on (<27 ns td(on)) and low quiescent loss. Use Value: 0.140 Ω RDS(on) limits voltage drop to <225 mV at 1.6 A, preserving battery runtime and enabling precise rail sequencing. | Use Scenario: Overvoltage and reverse-polarity protection for USB-C receptacle VBUS lines in portable accessories. IC Role / Device Role / Timing Role: Reverse-blocking switch placed between upstream VBUS and downstream load, activated only during valid 5 V presence. Use Value: -20 V VDS rating provides 10 V margin above USB-C max 20 V PD negotiation, preventing latch-up during hot-plug transients. |
| Wearable DC/DC Converter | Medical Sensor Node Power Gating |
Use Scenario: Synchronous rectifier in 1.8 V → 3.3 V buck converter powering Bluetooth LE radio in hearables. IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diode; driven by controller's complementary output. Use Value: Body diode VSD = -0.83 V and trr = 12 ns minimize reverse recovery loss and improve efficiency by >3 % vs. discrete diode solution. | Use Scenario: Power gating of analog front-end (AFE) and ADC in battery-operated ECG patch sensors. IC Role / Device Role / Timing Role: Ultra-low-leakage load switch isolating sensor subsystem during sleep mode to extend battery life. Use Value: IDSS = -1 µA at VDS = -20 V ensures <100 nA standby current per channel, enabling multi-week operation on coin-cell batteries. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel load switch applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si1401CDL-T1-GE3 | RDS(on) = 0.200 Ω at VGS = -4.5 V; lower Qg = 3.2 nC; same SOT-363 package | Higher conduction loss but faster switching; better suited for high-frequency, low-current (<1 A) applications | Select Si1401CDL-T1-GE3 when gate drive strength is limited and switching speed outweighs conduction loss. |
| DMG1012T-7 | RDS(on) = 0.150 Ω at VGS = -4.5 V; different SOT-563 package (smaller 1.3 × 1.7 mm); no quad-drain configuration | Lower thermal performance (RthJA = 250 °C/W typ.); less suitable for sustained >1.5 A loads on minimal PCB copper | Choose DMG1012T-7 only if board area is constrained below 2.2 mm² and peak current remains ≤1.3 A. |
Compared with SI1403CDL-T1-GE3, Si1401CDL-T1-GE3 trades 43 % higher RDS(on) for 20 % lower Qg, while DMG1012T-7 sacrifices thermal robustness for footprint reduction - making SI1403CDL-T1-GE3 the optimal balance of conduction efficiency, thermal headroom, and package compatibility for mid-power portable switching.
Availability
SI1403CDL-T1-GE3 is available at Aetrix Electronics and suitable for smartphone power management, USB-C port protection, wearable DC/DC converters, and medical sensor node power gating requiring stable component supply across high-mix, low-volume production runs.
Supply support for SI1403CDL-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on reliability, miniaturization, and energy efficiency.
The Si1403CDL belongs to Vishay's LITTLE FOOT® TrenchFET® family, engineered specifically for space-constrained portable electronics where low RDS(on), low gate charge, and thermally enhanced packaging are essential for battery life and thermal management.
FAQ
What is the maximum continuous drain current for SI1403CDL-T1-GE3 at 70 °C case temperature?
The maximum continuous drain current for SI1403CDL-T1-GE3 is -1.6 A at TC = 70 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the SOT-363 package under sustained power dissipation; designers must verify PCB copper area and airflow to maintain safe junction temperature below 150 °C. SI1403CDL-T1-GE3 maintains stable RDS(on) performance across this range due to its trench-gate process.
Does SI1403CDL-T1-GE3 support logic-level gate drive from a 3.3 V microcontroller?
No - SI1403CDL-T1-GE3 is a P-channel MOSFET requiring negative gate-to-source voltage for turn-on; it does not operate with positive 3.3 V logic drive alone. To interface with a 3.3 V MCU, a level-shifting circuit (e.g., N-channel driver or dedicated gate driver IC) must generate VGS ≤ -3.6 V. SI1403CDL-T1-GE3's VGS(th) range (-0.6 to -1.5 V) ensures full enhancement at -4.5 V, but -3.3 V is insufficient for reliable conduction.
What is the body diode forward voltage of SI1403CDL-T1-GE3 and how is it measured?
The body diode forward voltage (VSD) of SI1403CDL-T1-GE3 is -0.83 V (typ.) at IS = -1.3 A and VGS = 0 V, per the Drain-Source Body Diode Characteristics table. It is measured with source current flowing into the source terminal while the gate is grounded, simulating freewheeling conduction in buck converter topologies. This parameter directly impacts efficiency in synchronous rectification applications.
Is SI1403CDL-T1-GE3 suitable for use in automotive infotainment power rails?
SI1403CDL-T1-GE3 is not AEC-Q101 qualified and is intended for commercial portable electronics, not automotive applications. While its -55 to +150 °C operating range overlaps automotive requirements, Vishay does not certify this variant for automotive use. For infotainment systems, designers should select AEC-Q101-qualified equivalents such as the Si1403DL-T1-GE3 (automotive-grade version) or consult Vishay's qualified automotive MOSFET portfolio before deployment.
How does the quad-drain structure of SI1403CDL-T1-GE3 improve thermal performance over standard SOT-23?
The quad-drain SOT-363 package of SI1403CDL-T1-GE3 reduces junction-to-ambient thermal resistance to 180 °C/W (typ.) - nearly half that of comparable SOT-23 P-channel MOSFETs (~350–400 °C/W). This is achieved by routing current and heat through four parallel drain leads into PCB copper, lowering RthJF to 115 °C/W (typ.) and enabling 0.694 W dissipation on a 1" × 1" FR4 board. SI1403CDL-T1-GE3 thus sustains higher continuous current without thermal throttling in dense layouts.
SI1403CDL-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- 6-TSSOP, SC-88, SOT-363
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 2.1A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 140mOhm @ 1.6A, 4.5V
- Vgs(th) (Max) @ Id:
- 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 8 nC @ 4.5 V
- Vgs (Max):
- ±12V
- Input Capacitance (Ciss) (Max) @ Vds:
- 281 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 600mW (Ta), 900mW (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SC-70-6
SI1403CDL-T1-GE3 FAQ
1.How can I place an order for SI1403CDL-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI1403CDL-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI1403CDL-T1-GE3 reliable?
The price and inventory of SI1403CDL-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI1403CDL-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SI1403CDL-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI1403CDL-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI1403CDL-T1-GE3?
SI1403CDL-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI1403CDL-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI1403CDL-T1-GE3?
For technical support, including SI1403CDL-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI1403CDL-T1-GE3 requirements.
6.How does Aetrix verify that SI1403CDL-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SI1403CDL-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI1403CDL-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SI1403CDL-T1-GE3?
All SI1403CDL-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI1403CDL-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI1403CDL-T1-GE3 part is unused and in its original packaging.
Return procedure for SI1403CDL-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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