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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI1405BDH-T1-E3

Name: SI1405BDH-T1-E3
Brand: Vishay Siliconix
SKU: SI1405BDH-T1-E3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI1405BDH-T1-E3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: 6-TSSOP, SC-88, SOT-363

Datasheet:: SI1405BDH-T1-E3.pdf

Description:: MOSFET P-CH 8V 1.6A SC70-6

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Product details

Overview

SI1405BDH-T1-E3 from Vishay Siliconix is a P-channel enhancement-mode MOSFET in SC70-6 package, rated for -8 V V_DS, -1.6 A continuous drain current at T_A = 25 °C, and 0.091 Ω r_DS(on) at V_GS = -4.5 V. It serves as a low-side load switch in portable power management circuits with tight space constraints.

For engineers reviewing the SI1405BDH-T1-E3 datasheet, SI1405BDH-T1-E3 pinout, SI1405BDH-T1-E3 application, or SI1405BDH-T1-E3 equivalent, key selection criteria include its -1.6 A thermal-limited current at 70 °C ambient, 85 °C/W junction-to-ambient thermal resistance, and verified replacement status for SI1405DL-T1-E3 in legacy designs requiring improved power dissipation.

Technical Context

This device operates as a single P-channel MOSFET with gate-threshold voltage of -0.45 V (min) to -0.95 V (max), enabling logic-level drive from 1.8 V microcontrollers. Its r_DS(on) remains stable down to V_GS = -1.8 V (0.171–0.205 Ω), supporting ultra-low-voltage battery-powered systems.

Dynamic parameters include 3.67 nC total gate charge and 0.98 nC gate-drain charge, indicating fast switching capability with moderate drive strength requirements. The MOSFET integrates an intrinsic body diode with V_SD = -0.8 to -1.2 V at I_S = -1.47 A, suitable for synchronous rectification or reverse-polarity protection.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-8 V - Maximum blocking voltage for low-voltage DC rails like 3.3 V or 5 V systems
I_D (T_A = 25 °C)	-1.6 A - Continuous safe conduction current under standard bench conditions
r_DS(on) @ V_GS = -4.5 V	0.091 Ω (typ) - Low on-resistance minimizes I²R losses in compact power switches
R_thJA	85 °C/W - Thermal resistance enables 0.95 W power dissipation at 85 °C ambient
Q_g	3.67 nC (typ) - Gate charge level compatible with low-power GPIO or dedicated gate drivers
V_GS(th)	-0.45 V to -0.95 V - Ensures turn-on with 1.8 V logic without level shifting

Pinout & Package

SC70-6 surface-mount plastic package with 0.65 mm lead pitch and exposed drain pad for thermal enhancement.

Pin/Terminal	Circuit Role	Design Meaning
1	Gate (G)	Control terminal; accepts negative V_GS to enable conduction
2	Source (S)	Reference node for gate drive; connects to higher potential in high-side configuration
3	Drain (D)	Current output path; electrically tied to exposed pad for thermal conduction
4	Drain (D)	Second drain connection; shares same node as Pin 3 for parallel current handling
5	Source (S)	Redundant source connection; improves current sharing and reduces bond wire inductance
6	Gate (G)	Second gate connection; enhances gate drive robustness and reduces EMI susceptibility

Key Features

Feature	Design Value
1.8 V logic-compatible V_GS(th)	Enables direct interface with 1.8 V microcontroller GPIOs without level shifters
r_DS(on) = 0.091 Ω @ -4.5 V	Reduces conduction loss to ≤150 mW at 1.2 A, critical for battery runtime extension
SC70-6 package with exposed drain	Provides 85 °C/W thermal resistance-42 % lower than SI1405DL's 200 °C/W
Q_g = 3.67 nC (typ)	Supports 1 MHz switching with <1 µs rise/fall times using 10 Ω gate resistor

Applications

USB Port Power Switching	Smartphone Battery Protection
Use Scenario: Controlling 5 V USB VBUS power delivery to peripherals with overcurrent detection. IC Role / Device Role / Timing Role: Low-side P-channel switch isolating downstream loads during fault conditions. Use Value: 0.091 Ω r_DS(on) limits voltage drop to <120 mV at 1.2 A, preserving USB voltage compliance.	Use Scenario: Reverse-polarity and over-discharge protection in Li-ion battery packs. IC Role / Device Role / Timing Role: Back-to-back configured P-MOSFET for bidirectional blocking and controlled discharge path. Use Value: -0.45 V V_GS(th) ensures reliable turn-on with battery voltages down to 2.8 V.
Wearable Sensor Node Power Gating	IoT Edge Device Sleep Mode Control
Use Scenario: Shutting off sensor subsystems during deep-sleep cycles to reduce quiescent current. IC Role / Device Role / Timing Role: Load switch enabling sub-µA system standby current via gate-controlled isolation. Use Value: IDSS ≤ 1 µA at -8 V ensures leakage-induced battery drain remains below 100 nA per switch.	Use Scenario: Managing power domains for MCU, radio, and memory in battery-operated edge nodes. IC Role / Device Role / Timing Role: Single-pole power rail controller activated by low-power wake-up signals. Use Value: 3.67 nC Q_g allows full turn-on within 200 ns using 5 V GPIO, minimizing wake latency.

USB Port Power Switching

Smartphone Battery Protection

Use Scenario: Controlling 5 V USB VBUS power delivery to peripherals with overcurrent detection.

IC Role / Device Role / Timing Role: Low-side P-channel switch isolating downstream loads during fault conditions.

Use Value: 0.091 Ω r_DS(on) limits voltage drop to <120 mV at 1.2 A, preserving USB voltage compliance.

Use Scenario: Reverse-polarity and over-discharge protection in Li-ion battery packs.

IC Role / Device Role / Timing Role: Back-to-back configured P-MOSFET for bidirectional blocking and controlled discharge path.

Use Value: -0.45 V V_GS(th) ensures reliable turn-on with battery voltages down to 2.8 V.

Wearable Sensor Node Power Gating

IoT Edge Device Sleep Mode Control

Use Scenario: Shutting off sensor subsystems during deep-sleep cycles to reduce quiescent current.

IC Role / Device Role / Timing Role: Load switch enabling sub-µA system standby current via gate-controlled isolation.

Use Value: IDSS ≤ 1 µA at -8 V ensures leakage-induced battery drain remains below 100 nA per switch.

Use Scenario: Managing power domains for MCU, radio, and memory in battery-operated edge nodes.

IC Role / Device Role / Timing Role: Single-pole power rail controller activated by low-power wake-up signals.

Use Value: 3.67 nC Q_g allows full turn-on within 200 ns using 5 V GPIO, minimizing wake latency.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SI1405DL-T1-E3	Higher R_thJA (200 °C/W), lower I_D (−1.8 A @ 25 °C but −1.5 A @ 85 °C), 0.100 Ω r_DS(on) @ −4.5 V	Legacy design fit; unsuitable for sustained >70 °C ambient operation	Select SI1405BDH-T1-E3 when thermal headroom or higher continuous current at elevated temperature is required
DMN2041LSD-13	P-channel, −20 V V_DS, −2.8 A I_D, 0.075 Ω r_DS(on) @ −4.5 V, SOT-23-6 package	Higher voltage rating and current capacity; larger footprint and different pinout	Choose DMN2041LSD-13 only if system requires >8 V blocking or >1.6 A continuous current

Compared with SI1405DL-T1-E3, SI1405BDH-T1-E3 delivers 58 % lower thermal resistance and 20 % higher power dissipation at 85 °C ambient; versus DMN2041LSD-13, it offers identical SC70-6 footprint compatibility but trades voltage margin for smaller size and lower gate charge.

Availability

SI1405BDH-T1-E3 is available at Aetrix Electronics and suitable for USB power switching, wearable sensor node power gating, and IoT edge device sleep mode control requiring stable component supply across production lifecycles.

Supply support for SI1405BDH-T1-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.

The SI1405x family targets space-constrained, battery-powered applications where low r_DS(on), logic-level gate drive, and thermally efficient SC70 packaging are essential design requirements.

FAQ

What is the maximum continuous drain current for SI1405BDH-T1-E3 at 70 °C ambient?

The SI1405BDH-T1-E3 is rated for -1.2 A continuous drain current at T_A = 70 °C, as specified in Vishay document 69575. This value reflects derating from the -1.6 A rating at 25 °C due to thermal limitations. The SI1405BDH-T1-E3 achieves this with its 85 °C/W R_thJA, making it suitable for thermally constrained PCB layouts where the SI1405DL-T1-E3 would exceed safe junction temperature.

Is SI1405BDH-T1-E3 pin-compatible with SI1405DL-T1-E3?

Yes, SI1405BDH-T1-E3 has identical pinout and SC70-6 package dimensions to SI1405DL-T1-E3, as confirmed in Vishay comparison document 69575. Both share the same 6-pin arrangement and terminal functions. The SI1405BDH-T1-E3 replaces SI1405DL-T1-E3 directly in existing layouts without PCB modification, delivering improved thermal performance while maintaining mechanical and electrical interoperability.

What is the typical gate threshold voltage range for SI1405BDH-T1-E3?

The SI1405BDH-T1-E3 has a guaranteed gate-threshold voltage range of -0.45 V (minimum) to -0.95 V (maximum) at T_J = 25 °C. This allows reliable turn-on with 1.8 V logic-level signals, eliminating need for external level shifters. The SI1405BDH-T1-E3 maintains this specification across its full operating temperature range, ensuring consistent behavior in battery-powered devices from cold start to warm operation.

Can SI1405BDH-T1-E3 be used in back-to-back configuration for battery protection?

Yes, SI1405BDH-T1-E3 is commonly deployed in back-to-back P-channel MOSFET configurations for Li-ion battery protection ICs. Its -8 V V_DS rating and low r_DS(on) support bidirectional blocking and controlled discharge paths. The SI1405BDH-T1-E3's body diode forward voltage of -0.8 to -1.2 V ensures minimal voltage drop during charging cycles, preserving battery efficiency in compact wearable and medical devices.

What is the total gate charge of SI1405BDH-T1-E3 and how does it affect switching speed?

The SI1405BDH-T1-E3 has a typical total gate charge (Q_g) of 3.67 nC at V_GS = -4.5 V. With a gate resistance of 6.3 Ω, this enables sub-microsecond switching transitions-e.g., ~200 ns turn-on time with 5 V GPIO drive. The SI1405BDH-T1-E3's low Q_g reduces driver power consumption and EMI generation, making it ideal for high-frequency power gating in energy-sensitive IoT endpoints.

SI1405BDH-T1-E3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: 6-TSSOP, SC-88, SOT-363

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 8 V

Current - Continuous Drain (Id) @ 25°C:: 1.6A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 1.8V, 4.5V

Rds On (Max) @ Id, Vgs:: 112mOhm @ 2.8A, 4.5V

Vgs(th) (Max) @ Id:: 950mV @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 5.5 nC @ 4.5 V

Vgs (Max):: ±8V

Input Capacitance (Ciss) (Max) @ Vds:: 305 pF @ 4 V

FET Feature:: -

Power Dissipation (Max):: 1.47W (Ta), 2.27W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SC-70-6

SI1405BDH-T1-E3 FAQ

1.How can I place an order for SI1405BDH-T1-E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI1405BDH-T1-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI1405BDH-T1-E3 reliable?

The price and inventory of SI1405BDH-T1-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI1405BDH-T1-E3 is usually 5 days.

3.What payment methods are accepted for SI1405BDH-T1-E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI1405BDH-T1-E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI1405BDH-T1-E3?

SI1405BDH-T1-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI1405BDH-T1-E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI1405BDH-T1-E3?

For technical support, including SI1405BDH-T1-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI1405BDH-T1-E3 requirements.

6.How does Aetrix verify that SI1405BDH-T1-E3 is sourced from the original manufacturer or authorized distributors?

All SI1405BDH-T1-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI1405BDH-T1-E3 meets industry standards.

7.What is the process for return or replacement of SI1405BDH-T1-E3?

All SI1405BDH-T1-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SI1405BDH-T1-E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI1405BDH-T1-E3 part is unused and in its original packaging.

Return procedure for SI1405BDH-T1-E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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