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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI1406DH-T1-E3

Name: SI1406DH-T1-E3
Brand: Vishay Siliconix
SKU: SI1406DH-T1-E3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI1406DH-T1-E3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: 6-TSSOP, SC-88, SOT-363

Datasheet:: SI1406DH-T1-E3.pdf

Description:: MOSFET N-CH 20V 3.1A SC70-6

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Product details

Overview

SI1406DH-T1-E3 from Vishay Siliconix is a N-channel 20 V (D-S) TrenchFET® Power MOSFET in thermally enhanced SC-70 (SOT-363) package, with R_DS(on) = 0.065 Ω at V_GS = 4.5 V, I_D = 3.9 A, and gate threshold voltage of 0.45–1.2 V. It serves as a low-voltage load switch in space-constrained portable electronics.

For engineers reviewing the SI1406DH-T1-E3 datasheet, SI1406DH-T1-E3 pinout, SI1406DH-T1-E3 application, or SI1406DH-T1-E3 equivalent, key selection criteria include its 1.8 V logic-level gate drive capability, 0.096 Ω R_DS(on) at 1.8 V, thermal resistance R_thJA = 100 °C/W (steady state), and SOT-363 footprint compatibility with high-density PCB layouts.

Technical Context

This device uses trench-gate silicon technology optimized for low gate charge (Q_g = 4.9–7.5 nC) and fast switching (t_d(on) = 27–41 ns, t_f = 29–44 ns), enabling efficient operation in battery-powered load switching and RF PA bias control circuits.

Its dual-drain configuration in the 6-lead SC-70 package supports parallel internal drain paths, reducing conduction loss while maintaining compact size-critical for handheld devices where thermal dissipation and board area are tightly constrained.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	20 V - Maximum drain-source blocking voltage; suitable for 3.3 V/5 V system rails with margin.
R_DS(on) @ V_GS = 4.5 V	0.065 Ω - Enables ≤220 mW conduction loss at 3.9 A, supporting thermally limited thin PCBs.
I_D (continuous, T_A = 25 °C)	3.9 A - Rated current under standard FR4 board conditions; derates to 2.8 A at 85 °C ambient.
V_GS(th)	0.45–1.2 V - Ensures reliable turn-on with 1.8 V logic controllers without level-shifting circuitry.
Q_g	4.9–7.5 nC - Low gate charge minimizes driver power and enables high-frequency PWM switching up to ~1 MHz.
R_thJA (steady state)	100 °C/W - Junction-to-ambient thermal resistance defines max power dissipation (1.0 W at 25 °C ambient).
V_SD	0.75–1.1 V - Body diode forward voltage impacts reverse recovery in synchronous rectifier or H-bridge configurations.

Pinout & Package

Package: SC-70 (SOT-363), 6-lead surface-mount package with exposed drain pads for enhanced thermal performance. Dimensions: 2.0 mm × 2.1 mm × 0.9 mm (L × W × H).

Pin/Terminal	Circuit Role	Design Meaning
1 (Drain)	Main current-carrying terminal (Drain)	Internally connected to pins 2, 4, and 5; primary heat path to PCB copper via thermal pad.
2 (Drain)	Main current-carrying terminal (Drain)	Parallel drain connection; reduces effective R_DS(on) and improves current sharing.
3 (Gate)	Control input	Accepts 1.8–4.5 V logic-level signals; low C_iss (≈300 pF) eases driving from microcontrollers.
4 (Drain)	Main current-carrying terminal (Drain)	Part of multi-drain structure; contributes to low R_thJF = 34 °C/W (junction-to-foot).
5 (Drain)	Main current-carrying terminal (Drain)	Completes quad-drain topology; enables higher pulsed current (I_DM = 10 A) handling.
6 (Source)	Reference node / return path	Single-source terminal; connects to ground or low-side reference; body diode anode.

Key Features

Feature	Design Value
TrenchFET® architecture	Delivers 0.065 Ω R_DS(on) at 4.5 V in ultra-small SC-70, outperforming planar MOSFETs by >30 % in on-resistance density.
1.8 V logic-level gate drive	Guaranteed turn-on with 1.8 V I/O rails (e.g., ARM Cortex-M0/M3, FPGA banks), eliminating external level shifters.
Thermally enhanced SC-70	Quad-drain layout and exposed thermal pad reduce R_thJA to 100 °C/W (vs. typical 150+ °C/W for standard SC-70).
Halogen-free & RoHS-compliant	Meets IEC 61249-2-21 and Directive 2002/95/EC; suitable for consumer and medical portable equipment.
Low Q_gd/Q_gs ratio	Q_gd = 0.95 nC, Q_gs = 1.0 nC - Minimizes Miller effect, improving switching stability in high-dV/dt environments.

Applications

Smartphone Load Switch	Bluetooth Headset PA Control
Use Scenario: Powering/disabling camera modules, USB peripherals, or display backlight in smartphones during sleep mode. IC Role / Device Role / Timing Role: Low-side load switch controlling 3.3 V rail with <1 µA quiescent current when off. Use Value: Achieves <100 µA total system standby current using V_GS(th) < 1.2 V and I_DSS ≤ 1 µA at 20 V.	Use Scenario: Enabling/disabling RF power amplifier stages in Bluetooth audio transceivers to extend battery life. IC Role / Device Role / Timing Role: High-speed PA enable switch with t_f ≤ 44 ns, minimizing RF burst delay and spectral splatter. Use Value: Fast fall time and low Q_g allow clean 2.4 GHz PA gating without added gate drivers or timing compensation.
Wearable Sensor Hub Level Shift	IoT Edge Node Battery Protection
Use Scenario: Interfacing 1.8 V sensor outputs to 3.3 V MCU inputs in compact wearables using level-shifting topology. IC Role / Device Role / Timing Role: Bidirectional level translator leveraging low V_GS(th) and symmetric R_DS(on) in both directions. Use Value: Supports 1.8 V ↔ 3.3 V translation with <0.1 V drop at 2 mA, enabled by sub-1 V threshold and matched channel characteristics.	Use Scenario: Isolating backup coin-cell supply from main Li-ion battery during charging or fault conditions in smart sensors. IC Role / Device Role / Timing Role: Reverse-polarity and overcurrent protection switch placed in series with battery path. Use Value: R_DS(on) = 0.096 Ω at 1.8 V ensures <200 mV drop at 2 A load, preserving voltage headroom for low-power PMICs.

Smartphone Load Switch

Bluetooth Headset PA Control

Use Scenario: Powering/disabling camera modules, USB peripherals, or display backlight in smartphones during sleep mode.

IC Role / Device Role / Timing Role: Low-side load switch controlling 3.3 V rail with <1 µA quiescent current when off.

Use Value: Achieves <100 µA total system standby current using V_GS(th) < 1.2 V and I_DSS ≤ 1 µA at 20 V.

Use Scenario: Enabling/disabling RF power amplifier stages in Bluetooth audio transceivers to extend battery life.

IC Role / Device Role / Timing Role: High-speed PA enable switch with t_f ≤ 44 ns, minimizing RF burst delay and spectral splatter.

Use Value: Fast fall time and low Q_g allow clean 2.4 GHz PA gating without added gate drivers or timing compensation.

Wearable Sensor Hub Level Shift

IoT Edge Node Battery Protection

Use Scenario: Interfacing 1.8 V sensor outputs to 3.3 V MCU inputs in compact wearables using level-shifting topology.

IC Role / Device Role / Timing Role: Bidirectional level translator leveraging low V_GS(th) and symmetric R_DS(on) in both directions.

Use Value: Supports 1.8 V ↔ 3.3 V translation with <0.1 V drop at 2 mA, enabled by sub-1 V threshold and matched channel characteristics.

Use Scenario: Isolating backup coin-cell supply from main Li-ion battery during charging or fault conditions in smart sensors.

IC Role / Device Role / Timing Role: Reverse-polarity and overcurrent protection switch placed in series with battery path.

Use Value: R_DS(on) = 0.096 Ω at 1.8 V ensures <200 mV drop at 2 A load, preserving voltage headroom for low-power PMICs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si1404DH-T1-E3	R_DS(on) = 0.085 Ω @ 4.5 V; lower I_D = 3.2 A; same SC-70 package and pinout.	Slightly higher conduction loss; better suited for lower-current, cost-sensitive designs.	Select when thermal budget allows higher R_DS(on) and peak current remains below 3.2 A.
DMN2020LSD-13	20 V, R_DS(on) = 0.055 Ω @ 4.5 V, but in SOT-23-6 (different pinout); higher Q_g = 9.5 nC.	Requires PCB redesign due to non-compatible pin mapping and larger footprint.	Choose only if lower on-resistance is critical and layout revision is acceptable.

Compared with SI1406DH-T1-E3, Si1404DH-T1-E3 offers identical form factor with relaxed current rating, while DMN2020LSD-13 delivers lower R_DS(on) at the cost of incompatible packaging and increased gate drive demand-making SI1406DH-T1-E3 optimal for drop-in upgrades in existing SC-70 designs requiring balanced speed, loss, and size.

Availability

SI1406DH-T1-E3 is available at Aetrix Electronics and suitable for smartphone load switching, Bluetooth headset PA control, and wearable sensor hub level shifting requiring stable component supply across high-mix, low-volume production runs.

Supply support for SI1406DH-T1-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on high-reliability, high-efficiency solutions.

The Si1406DH belongs to Vishay's TrenchFET® Gen III logic-level MOSFET family, engineered specifically for space- and power-constrained portable electronics requiring robust 1.8 V–4.5 V gate drive compatibility and low thermal resistance in ultra-small packages.

FAQ

What is the maximum continuous drain current for SI1406DH-T1-E3 at 85 °C ambient temperature?

The SI1406DH-T1-E3 supports 2.8 A continuous drain current at T_A = 85 °C on a 1" × 1" FR4 board, per the Absolute Maximum Ratings table. This derating reflects thermal limits imposed by R_thJA = 100 °C/W and P_D = 0.81 W at that ambient. Designers must verify board layout, copper area, and airflow to sustain this current reliably in end equipment.

Does SI1406DH-T1-E3 support true 1.8 V logic-level operation?

Yes, SI1406DH-T1-E3 is fully characterized down to V_GS = 1.8 V, with R_DS(on) = 0.096 Ω at I_D = 2 A and guaranteed V_GS(th) ≤ 1.2 V. Its TrenchFET® process ensures strong enhancement-mode behavior and stable conduction even at 1.8 V, making it suitable for direct interface with 1.8 V microcontroller GPIOs without external level shifting.

What is the marking code for SI1406DH-T1-E3 on the physical device?

The SI1406DH-T1-E3 is marked with "AB" followed by a two-digit lot traceability code and date code on the top surface of the SC-70 package. The "AB" prefix uniquely identifies the Si1406DH die variant within Vishay's SOT-363 product family and confirms Pb-free (RoHS-compliant) construction per the -E3 suffix.

Can SI1406DH-T1-E3 be used in reverse-biased (source-to-drain) conduction mode?

Yes, SI1406DH-T1-E3 contains an integrated body diode with V_SD = 0.75–1.1 V at I_S = 1.4 A, enabling controlled reverse conduction. However, its R_DS(on) is not symmetrical in reverse mode, and trr = 35–60 ns limits use in high-frequency synchronous rectification unless paired with active gate control to mitigate shoot-through risk.

Is SI1406DH-T1-E3 halogen-free and RoHS-compliant?

Yes, SI1406DH-T1-E3 meets both RoHS Directive 2002/95/EC and IEC 61249-2-21 halogen-free requirements. The "-E3" suffix denotes lead-free termination, and the "-GE3" variant (not this part) adds explicit halogen-free certification. All SI1406DH-T1-E3 units shipped post-2010 comply with these environmental standards as verified in Vishay Document #70684 Rev. C.

SI1406DH-T1-E3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: 6-TSSOP, SC-88, SOT-363

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 3.1A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 1.8V, 4.5V

Rds On (Max) @ Id, Vgs:: 65mOhm @ 3.9A, 4.5V

Vgs(th) (Max) @ Id:: 1.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 7.5 nC @ 4.5 V

Vgs (Max):: ±8V

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: 1W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SC-70-6

SI1406DH-T1-E3 FAQ

1.How can I place an order for SI1406DH-T1-E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI1406DH-T1-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI1406DH-T1-E3 reliable?

The price and inventory of SI1406DH-T1-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI1406DH-T1-E3 is usually 5 days.

3.What payment methods are accepted for SI1406DH-T1-E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI1406DH-T1-E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI1406DH-T1-E3?

SI1406DH-T1-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI1406DH-T1-E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI1406DH-T1-E3?

For technical support, including SI1406DH-T1-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI1406DH-T1-E3 requirements.

6.How does Aetrix verify that SI1406DH-T1-E3 is sourced from the original manufacturer or authorized distributors?

All SI1406DH-T1-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI1406DH-T1-E3 meets industry standards.

7.What is the process for return or replacement of SI1406DH-T1-E3?

All SI1406DH-T1-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SI1406DH-T1-E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI1406DH-T1-E3 part is unused and in its original packaging.

Return procedure for SI1406DH-T1-E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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