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Vishay Siliconix SI1406DH-T1-GE3
- Part No.:
- SI1406DH-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- 6-TSSOP, SC-88, SOT-363
- Datasheet:
-
SI1406DH-T1-GE3.pdf
- Description:
- MOSFET N-CH 20V 3.1A SC70-6
- Quantity:
- Payment:
- Shipping:
Inventory:3,170
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Product details
Overview
SI1406DH-T1-GE3 from Vishay Siliconix is a N-channel 20 V TrenchFET® power MOSFET in thermally enhanced SC-70 (SOT-363) package, with RDS(on) = 0.065 Ω at VGS = 4.5 V, 3.9 A continuous drain current, and 1.8 V gate threshold rating-designed for low-voltage load switching in space-constrained portable electronics.
For engineers reviewing the SI1406DH-T1-GE3 datasheet, SI1406DH-T1-GE3 pinout, SI1406DH-T1-GE3 application, or SI1406DH-T1-GE3 equivalent, key selection criteria include its 1.8 V logic-level drive capability, 0.096 Ω on-resistance at 1.8 V gate drive, SC-70 thermal performance (RthJA = 100 °C/W steady-state), and halogen-free/RoHS-compliant construction.
Technical Context
This device uses trench-gate MOSFET technology optimized for low gate charge (Qg = 4.9–7.5 nC) and fast switching (td(on) = 27–41 ns, tf = 29–44 ns), enabling efficient operation in high-frequency load-switching circuits. Its 1.8 V-rated gate threshold allows direct interfacing with 1.8 V and 2.5 V microcontroller I/Os without level shifting.
The SC-70 (SOT-363) package integrates six leads with dual-drain configuration (pins 1, 2, 4, 5 = D; pin 3 = G; pin 6 = S), delivering improved thermal resistance to foot (RthJF = 34–45 °C/W) versus standard SOT-23 variants-critical for sustained 3.2–3.9 A conduction in compact PCB layouts.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 20 V - supports rail voltages up to 20 V DC without breakdown |
| RDS(on) @ VGS = 4.5 V | 0.065 Ω - enables ≤ 1.05 W conduction loss at 4 A continuous drain |
| ID (continuous, TA = 25 °C) | 3.9 A - rated for sustained load switching in ambient-cooled SC-70 layout |
| VGS(th) | 0.45–1.2 V - ensures reliable turn-on with 1.8 V logic-level drivers |
| Qg | 4.9–7.5 nC - reduces gate drive power and switching transition time |
| RthJA (steady-state) | 100–125 °C/W - defines thermal derating slope for ambient temperature design margins |
| VSD (diode) | 0.75–1.1 V - limits reverse recovery energy in synchronous or body-diode conduction |
Pinout & Package
Package: SC-70 (SOT-363), 6-lead surface-mount, thermally enhanced with exposed drain pads (pins 1, 2, 4, 5). Marking code AB.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 4, 5 | Drain (D) | Parallel-connected drain terminals-reduce effective RDS(on) and improve thermal dissipation via multiple PCB copper paths |
| 3 | Gate (G) | Control terminal requiring ≤ ±8 V gate-source voltage; low input capacitance enables fast edge-driven switching |
| 6 | Source (S) | Power return path and reference node for gate drive; tied to system ground in high-side or low-side configurations |
Key Features
| Feature | Design Value |
|---|---|
| 1.8 V gate threshold rating | Enables direct drive from 1.8 V/2.5 V MCUs without external level shifters or gate boosters |
| TrenchFET® process technology | Delivers lower RDS(on) per die area than planar MOSFETs-critical for miniaturized load switches |
| Halogen-free & RoHS-compliant | Meets IEC 61249-2-21 and EU Directive 2002/95/EC for environmentally regulated end equipment |
| Thermally enhanced SC-70 | Reduces junction-to-foot thermal resistance to 34–45 °C/W-improves power handling vs. standard SOT-23 |
Applications
| Smartphone Power Management | Wearable Sensor Hub |
|---|---|
Use Scenario: Controlling power to camera modules, NFC transceivers, or USB-C accessory detection circuitry during sleep mode. IC Role / Device Role / Timing Role: Low-side load switch enabling rapid, low-leakage power gating under MCU GPIO control. Use Value: 1 µA max IDSS at 20 V and 0.065 Ω RDS(on) minimize standby loss and voltage drop during active use. | Use Scenario: Isolating battery-powered sensor clusters (accelerometer, gyroscope, HRM) when not sampling. IC Role / Device Role / Timing Role: High-efficiency, logic-level-controlled power switch with fast turn-on (<41 ns) for responsive wake-up sequencing. Use Value: 1.8 V VGS(th) and 4.9 nC Qg allow sub-10 µs enable transitions from ultra-low-power microcontrollers. |
| Bluetooth LE Audio Earbuds | Industrial Handheld Scanner |
Use Scenario: Enabling/disabling Class-D audio amplifier supply rails to reduce quiescent current between voice prompts. IC Role / Device Role / Timing Role: Compact, low-RDS(on) N-channel switch placed between battery and amplifier VDD. Use Value: Dual-drain SC-70 layout (pins 1/2/4/5) lowers thermal impedance, sustaining 3.2 A pulsed current during audio peaks. | Use Scenario: Managing power to 2D barcode imager and laser aiming subsystems in battery-operated field devices. IC Role / Device Role / Timing Role: Robust, halogen-free load switch meeting industrial environmental compliance and thermal cycling requirements. Use Value: -55 to +150 °C operating range and 100 °C/W RthJA support reliable operation in uncontrolled ambient environments. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel load switch applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN2016LFG-7 | RDS(on) = 0.052 Ω @ 4.5 V but in 1.6 × 1.6 mm WDFN; no halogen-free marking confirmed | Better RDS(on) but requires re-layout due to different footprint and thermal pad | Prefer when board space allows WDFN and halogen content is not mandated |
| AO3400 | RDS(on) = 0.043 Ω @ 4.5 V in SOT-23; VGS(th) min = 0.7 V-less robust 1.8 V drive margin | Higher peak current capability but reduced gate-threshold safety margin at low VGS | Select only if gate drive is ≥2.5 V and halogen-free compliance is not required |
Compared with DMN2016LFG-7 and AO3400, SI1406DH-T1-GE3 uniquely combines 1.8 V logic compatibility, halogen-free certification, and SC-70 thermal enhancement-making it optimal for space-limited, eco-regulated portable designs where gate drive voltage headroom is constrained.
Availability
SI1406DH-T1-GE3 is available at Aetrix Electronics and suitable for smartphone power management, wearable sensor hubs, and Bluetooth LE audio earbuds requiring stable component supply across high-mix, low-volume production runs.
Supply support for SI1406DH-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, optoelectronics, and passive components with emphasis on power efficiency and reliability.
The Si1406DH product line targets ultra-compact, low-voltage load switching in battery-powered consumer electronics-prioritizing 1.8 V logic compatibility, halogen-free compliance, and thermally optimized SC-70 packaging.
FAQ
What is the maximum continuous drain current for SI1406DH-T1-GE3 at 85 °C ambient?
The SI1406DH-T1-GE3 supports 2.2 A continuous drain current at TA = 85 °C with proper PCB copper area, based on its 0.52 W maximum power dissipation rating and 125 °C/W maximum junction-to-ambient thermal resistance under steady-state conditions.
Does SI1406DH-T1-GE3 support true 1.8 V logic-level gate drive?
Yes. The SI1406DH-T1-GE3 has a guaranteed gate threshold voltage range of 0.45–1.2 V and delivers RDS(on) = 0.096 Ω at VGS = 1.8 V and ID = 2 A-enabling full enhancement with 1.8 V microcontroller outputs without external boosting.
What is the pin configuration of SI1406DH-T1-GE3 in the SC-70 package?
The SI1406DH-T1-GE3 uses a 6-pin SC-70 (SOT-363) package with pins 1, 2, 4, 5 as parallel-connected drains, pin 3 as gate, and pin 6 as source-confirmed by Vishay's official package drawing and top-view marking diagram in Document 70684.
Is SI1406DH-T1-GE3 halogen-free and RoHS-compliant?
Yes. SI1406DH-T1-GE3 is explicitly specified as "Lead (Pb)-free and Halogen-free" per IEC 61249-2-21 and complies with RoHS Directive 2002/95/EC, as stated in its ordering information and features list in Vishay's official datasheet Rev. C.
What is the typical total gate charge (Qg) of SI1406DH-T1-GE3?
The SI1406DH-T1-GE3 has a typical total gate charge of 4.9 nC and a maximum of 7.5 nC at VDS = 10 V, VGS = 4.5 V, and ID = 3.9 A-enabling low-energy switching and reduced driver-stage power consumption in high-frequency load-switching applications.
SI1406DH-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- 6-TSSOP, SC-88, SOT-363
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 3.1A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 65mOhm @ 3.9A, 4.5V
- Vgs(th) (Max) @ Id:
- 1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 7.5 nC @ 4.5 V
- Vgs (Max):
- ±8V
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- -
- Power Dissipation (Max):
- 1W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SC-70-6
SI1406DH-T1-GE3 FAQ
1.How can I place an order for SI1406DH-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI1406DH-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI1406DH-T1-GE3 reliable?
The price and inventory of SI1406DH-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI1406DH-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SI1406DH-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI1406DH-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI1406DH-T1-GE3?
SI1406DH-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI1406DH-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI1406DH-T1-GE3?
For technical support, including SI1406DH-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI1406DH-T1-GE3 requirements.
6.How does Aetrix verify that SI1406DH-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SI1406DH-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI1406DH-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SI1406DH-T1-GE3?
All SI1406DH-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI1406DH-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI1406DH-T1-GE3 part is unused and in its original packaging.
Return procedure for SI1406DH-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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