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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI1411DH-T1-BE3

Name: SI1411DH-T1-BE3
Brand: Vishay Siliconix
SKU: SI1411DH-T1-BE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI1411DH-T1-BE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: 6-TSSOP, SC-88, SOT-363

Datasheet:: SI1411DH-T1-BE3.pdf

Description:: MOSFET P-CH 150V 420MA SC70-6

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Product details

Overview

SI1411DH-T1-BE3 from Vishay Siliconix is a P-channel enhancement-mode MOSFET in SC-70 (SOT-363) package, rated for -150 V drain-source voltage, 2.6 Ω R_DS(on) at V_GS = -10 V, and -0.52 A continuous drain current at T_A = 25 °C. It serves as a high-voltage active clamp switch in isolated DC/DC converters.

For engineers reviewing the SI1411DH-T1-BE3 datasheet, SI1411DH-T1-BE3 pinout, SI1411DH-T1-BE3 application, or SI1411DH-T1-BE3 equivalent, key selection criteria include its ultra-low on-resistance in thermally enhanced copper leadframe SC-70, guaranteed -150 V V_DS rating, and validated performance in active clamp flyback topologies under repetitive avalanche stress.

Technical Context

This device employs trench-based silicon process architecture to achieve stable R_DS(on) over temperature and low gate charge (4.2 nC typical). Its four-drain-pin configuration in the SC-70 package enables improved thermal conduction to PCB copper, reducing R_thJA to 100 °C/W (steady-state) versus legacy Alloy 42 variants.

The SI1411DH-T1-BE3 features a body diode with 36 ns reverse recovery time and 65 nC Q_rr, supporting synchronous rectification and snubberless operation in high-frequency switching applications up to 500 kHz. Gate threshold voltage is specified between -2.5 V and -4.5 V, ensuring robust turn-off margin in noisy power supply environments.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-150 V - supports primary-side clamping in 48 V–400 V input DC/DC converters without derating
R_DS(on)	2.6 Ω @ V_GS = -10 V - enables <1 W conduction loss at 0.5 A in compact layouts
I_D (cont)	-0.52 A @ T_A = 25 °C - suitable for low-current clamp paths with minimal heatsinking
Q_g	4.2 nC typical - reduces gate drive power and switching losses in high-frequency operation
V_GS(th)	-2.5 to -4.5 V - ensures reliable turn-off with standard -5 V or -12 V gate drivers
R_thJA	100 °C/W steady-state - allows 1.56 W dissipation on 1" × 1" FR4 with dual-side copper
E_AS	0.22 mJ - withstands single-pulse avalanche energy during transient overvoltage events

Pinout & Package

Package: SC-70 (SOT-363), 6-lead surface-mount package with copper leadframe, footprint per Vishay AN826 (0.045" × 0.067" pad pattern recommended). Four drain terminals provide low-inductance, high-current paths and enhanced thermal transfer to PCB.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 4, 6	Drain (D)	Four parallel drain connections reduce effective R_DS(on) and thermal resistance to PCB
3	Gate (G)	Control terminal requiring ≤ ±20 V drive; 8.5 Ω gate resistance limits ringing
5	Source (S)	Reference node for gate drive and load return; tied to clamp capacitor ground

Key Features

Feature	Design Value
TrenchFET® process	Enables stable -150 V rating with 2.6 Ω R_DS(on) in sub-2 mm² footprint
Copper leadframe SC-70	Reduces R_thJA by 52% vs. Alloy 42 version, enabling 1.01 W power handling at 25 °C ambient
Four-drain-pin layout	Provides 4× current-carrying capacity and lower parasitic inductance for high-dI/dt clamp circuits
Guaranteed avalanche energy	0.22 mJ single-pulse E_AS supports reliable operation in active clamp flyback reset transients
Low Q_gd/Q_gs ratio	1.3/0.9 = 1.44 - improves hard-switching robustness and reduces Miller-induced shoot-through risk

Applications

Active Clamp Flyback Converter	High-Voltage LED Driver
Use Scenario: Primary-side active clamp circuit in 24–48 V input telecom DC/DC modules operating at 200–500 kHz. IC Role / Device Role / Timing Role: High-side clamp switch that recycles transformer leakage energy and resets core flux. Use Value: -150 V V_DS rating and 0.22 mJ E_AS ensure reliable clamp operation without snubber networks or voltage spikes exceeding 120 V.	Use Scenario: Constant-current string control in industrial LED lighting with 100–150 V bus voltage. IC Role / Device Role / Timing Role: Low-duty-cycle PWM switch regulating current through high-V_f LED arrays. Use Value: 2.6 Ω R_DS(on) limits conduction loss to <0.7 W at 0.5 A, while SC-70 footprint saves board space in multi-channel drivers.
Isolated Gate Driver Level Shifter	Backup Power Switch
Use Scenario: High-side level-shifting element in isolated half-bridge gate driver ICs for SiC MOSFETs. IC Role / Device Role / Timing Role: Fast-turning P-channel switch translating logic-level signals across isolation barriers. Use Value: 4.5 ns turn-on delay and 11 ns rise time support >1 MHz signal translation with minimal propagation skew.	Use Scenario: OR-ing switch in redundant 48 V telecom power systems with automatic failover. IC Role / Device Role / Timing Role: Reverse-polarity protection and load disconnect switch in hot-swap controllers. Use Value: -150 V blocking capability prevents reverse current flow during battery backup switchover with up to 100 V transients.

Active Clamp Flyback Converter

High-Voltage LED Driver

Use Scenario: Primary-side active clamp circuit in 24–48 V input telecom DC/DC modules operating at 200–500 kHz.

IC Role / Device Role / Timing Role: High-side clamp switch that recycles transformer leakage energy and resets core flux.

Use Value: -150 V V_DS rating and 0.22 mJ E_AS ensure reliable clamp operation without snubber networks or voltage spikes exceeding 120 V.

Use Scenario: Constant-current string control in industrial LED lighting with 100–150 V bus voltage.

IC Role / Device Role / Timing Role: Low-duty-cycle PWM switch regulating current through high-V_f LED arrays.

Use Value: 2.6 Ω R_DS(on) limits conduction loss to <0.7 W at 0.5 A, while SC-70 footprint saves board space in multi-channel drivers.

Isolated Gate Driver Level Shifter

Backup Power Switch

Use Scenario: High-side level-shifting element in isolated half-bridge gate driver ICs for SiC MOSFETs.

IC Role / Device Role / Timing Role: Fast-turning P-channel switch translating logic-level signals across isolation barriers.

Use Value: 4.5 ns turn-on delay and 11 ns rise time support >1 MHz signal translation with minimal propagation skew.

Use Scenario: OR-ing switch in redundant 48 V telecom power systems with automatic failover.

IC Role / Device Role / Timing Role: Reverse-polarity protection and load disconnect switch in hot-swap controllers.

Use Value: -150 V blocking capability prevents reverse current flow during battery backup switchover with up to 100 V transients.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel high-voltage MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si1413DH-T1-BE3	-200 V V_DS, 3.8 Ω R_DS(on) @ -10 V, same SC-70 package	Higher voltage margin but higher conduction loss; suited for >100 V bus designs	Select when system transients exceed -150 V or long-term reliability requires extra voltage headroom
DMN2011UFG-7	-20 V V_DS, 0.115 Ω R_DS(on), SOT-23 package	Lower voltage, much lower R_DS(on); incompatible voltage rating for clamp use	Only viable in low-voltage (<24 V) OR-ing or load switch roles - not a functional substitute for SI1411DH-T1-BE3 in clamp circuits

Compared with Si1413DH-T1-BE3, the SI1411DH-T1-BE3 offers lower R_DS(on) and optimized thermal performance for 150 V-class clamp duty; compared with DMN2011UFG-7, it provides essential -150 V blocking but trades off on-conductance for voltage capability - making it uniquely suited for active clamp flyback primary-side switching where both voltage and thermal efficiency matter.

Availability

SI1411DH-T1-BE3 is available at Aetrix Electronics and suitable for active clamp DC/DC converters, high-voltage LED drivers, isolated gate driver level shifters, and telecom backup power switches requiring stable component supply and traceable sourcing.

Supply support for SI1411DH-T1-BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, optoelectronics, and passive components with emphasis on power efficiency and reliability.

The SI1411DH-T1-BE3 belongs to Vishay's LITTLE FOOT® SC-70 trench MOSFET family, designed specifically for space-constrained, high-voltage switching applications where thermal performance and avalanche ruggedness are critical - especially in telecom and industrial power conversion.

FAQ

What is the maximum continuous drain current for SI1411DH-T1-BE3 at 85 °C ambient?

The SI1411DH-T1-BE3 supports -0.38 A continuous drain current at T_A = 85 °C (steady-state, on FR4 board). This value reflects thermal derating due to reduced power dissipation capability at elevated ambient temperatures, and is derived from the 0.81 W maximum power rating at 85 °C and the device's R_DS(on) characteristics. Designers must verify junction temperature using R_thJA = 100 °C/W in their specific layout.

Does SI1411DH-T1-BE3 have a qualified avalanche rating?

Yes, the SI1411DH-T1-BE3 is rated for single-pulse avalanche energy of 0.22 mJ (E_AS) and single-pulse avalanche current of -2.1 A (I_AS) with L = 0.1 mH. These values are production-tested and guaranteed per Vishay specification document 73242, making SI1411DH-T1-BE3 suitable for active clamp circuits where transformer leakage energy must be safely absorbed without external snubbers.

What is the gate threshold voltage range for SI1411DH-T1-BE3?

The gate threshold voltage (V_GS(th)) for SI1411DH-T1-BE3 is specified from -2.5 V to -4.5 V at I_D = -100 μA. This range ensures predictable turn-on behavior across process and temperature variation, and provides sufficient margin against false triggering in noisy power supply environments. The SI1411DH-T1-BE3 remains fully enhanced down to -4.5 V, supporting compatibility with standard -5 V or -12 V gate drive rails.

Can SI1411DH-T1-BE3 be used in place of an N-channel MOSFET in active clamp circuits?

No - the SI1411DH-T1-BE3 is a P-channel device and operates with negative gate-to-source bias; it cannot directly replace an N-channel MOSFET without inverting the gate drive polarity and reconfiguring the clamp topology. In active clamp flyback designs, SI1411DH-T1-BE3 is typically placed on the primary high-side with source tied to input rail, whereas N-channel alternatives require level-shifted gate drive. Its role is defined by its P-channel nature and -150 V rating, not drop-in substitution.

What is the thermal resistance from junction to foot (R_thJF) for SI1411DH-T1-BE3?

The SI1411DH-T1-BE3 has a maximum junction-to-foot (drain) thermal resistance of 45 °C/W and a typical value of 34 °C/W, measured at the drain leads where they contact the PCB. This parameter is critical for estimating local heating under high pulsed current conditions and confirms the benefit of the copper leadframe and four-drain-pin construction - delivering ~4× better thermal conduction than legacy Alloy 42 SC-70 packages.

SI1411DH-T1-BE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: 6-TSSOP, SC-88, SOT-363

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 150 V

Current - Continuous Drain (Id) @ 25°C:: 420mA (Ta)

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: 2.6Ohm @ 500mA, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 100µA

Gate Charge (Qg) (Max) @ Vgs:: 6.3 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: 1W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SC-70-6

SI1411DH-T1-BE3 FAQ

1.How can I place an order for SI1411DH-T1-BE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI1411DH-T1-BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI1411DH-T1-BE3 reliable?

The price and inventory of SI1411DH-T1-BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI1411DH-T1-BE3 is usually 5 days.

3.What payment methods are accepted for SI1411DH-T1-BE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI1411DH-T1-BE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI1411DH-T1-BE3?

SI1411DH-T1-BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI1411DH-T1-BE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI1411DH-T1-BE3?

For technical support, including SI1411DH-T1-BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI1411DH-T1-BE3 requirements.

6.How does Aetrix verify that SI1411DH-T1-BE3 is sourced from the original manufacturer or authorized distributors?

All SI1411DH-T1-BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI1411DH-T1-BE3 meets industry standards.

7.What is the process for return or replacement of SI1411DH-T1-BE3?

All SI1411DH-T1-BE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI1411DH-T1-BE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI1411DH-T1-BE3 part is unused and in its original packaging.

Return procedure for SI1411DH-T1-BE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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