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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI1411DH-T1-E3

Name: SI1411DH-T1-E3
Brand: Vishay Siliconix
SKU: SI1411DH-T1-E3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI1411DH-T1-E3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: 6-TSSOP, SC-88, SOT-363

Datasheet:: SI1411DH-T1-E3.pdf

Description:: MOSFET P-CH 150V 420MA SC70-6

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Product details

Overview

SI1411DH-T1-E3 from Vishay Siliconix is a P-channel enhancement-mode MOSFET in SC-70 (SOT-363) package, rated for -150 V drain-source voltage, 2.6 Ω on-resistance at -10 V gate drive, and -0.52 A continuous drain current at 25 °C. It serves as a high-voltage active clamp switch in isolated DC-DC converters.

For engineers reviewing the SI1411DH-T1-E3 datasheet, SI1411DH-T1-E3 pinout, SI1411DH-T1-E3 application, or SI1411DH-T1-E3 equivalent, key selection criteria include its trench-based low-R_DS(on) architecture, thermally enhanced copper leadframe, ultra-low gate charge (4.2 nC), and suitability for space-constrained high-voltage clamping circuits requiring <1 W power dissipation.

Technical Context

This device uses Vishay's TrenchFET® process to achieve stable R_DS(on) across temperature and gate voltage, with V_GS(th) tightly specified between -2.5 V and -4.5 V. Its four-drain-pin configuration in the SC-70 package reduces both conduction loss and junction-to-foot thermal resistance (typ. 34 °C/W).

The SI1411DH-T1-E3 supports fast switching via low Q_g (4.2 nC), Q_gd (1.3 nC), and sub-10 ns turn-off delay, while maintaining robust avalanche capability (E_AS = 0.22 mJ) and low IDSS (<1 µA at -150 V, 25 °C) for high-voltage hold-off integrity.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-150 V - Enables use in 100 V+ bus applications including active clamp flyback and forward converters
R_DS(on)	2.6 Ω @ V_GS = -10 V - Low conduction loss at standard logic-level gate drive
I_D (cont)	-0.52 A @ T_A = 25 °C - Sufficient for low-power clamp currents in sub-10 W isolated supplies
Q_g	4.2 nC - Enables efficient high-frequency switching with minimal driver power demand
R_thJA	100 °C/W (steady-state) - Requires minimal PCB copper area for thermal management on FR4
V_GS(th)	-2.5 to -4.5 V - Ensures reliable turn-on with standard -5 V or -10 V gate control rails
E_AS	0.22 mJ - Withstands single-pulse inductive energy during clamp operation without failure

Pinout & Package

SC-70 (SOT-363) package with copper leadframe, 6-pin surface-mount outline measuring 2.0 × 2.1 × 1.0 mm (L × W × H). Features four parallel drain terminals for reduced R_DS(on) and improved thermal path to PCB.

Pin/Terminal	Circuit Role	Design Meaning
1	Drain	One of four paralleled drain connections; contributes to lower effective R_DS(on) and thermal resistance
2	Drain	Second drain terminal; electrically identical to Pin 1, 4, and 6 for layout flexibility
3	Gate	Control input; requires negative bias relative to source to turn on; low C_iss enables fast edge rates
4	Drain	Third drain terminal; shares same node as Pins 1, 2, and 6; used for thermal spreading
5	Source	Reference node for gate drive and load return; tied to primary-side ground in clamp topologies
6	Drain	Fourth drain terminal; completes symmetric drain layout for optimal current sharing and heat distribution

Key Features

Feature	Design Value
TrenchFET® construction	Delivers stable R_DS(on) over temperature and gate voltage, critical for consistent clamp timing
Copper leadframe SC-70	Reduces R_thJF to 34 °C/W (typ.), enabling higher power density than Alloy 42 alternatives
Four-drain-pin topology	Lowers effective on-resistance and improves thermal coupling to PCB copper without footprint change
Ultra-low Q_g/Q_gd	4.2 nC total / 1.3 nC Miller charge - minimizes switching loss and gate driver stress
Halogen-free & RoHS-compliant	Meets JEDEC JS709A and EU Directive 2011/65/EU requirements for green electronics manufacturing

Applications

Active Clamp Flyback Converter	Isolated Gate Driver Bias Supply
Use Scenario: High-efficiency 24–48 V input flyback converter with active clamp reset to recover leakage energy and reduce voltage stress on main switch. IC Role / Device Role / Timing Role: SI1411DH-T1-E3 functions as the active clamp switch, synchronously turning on during transformer reset to recycle energy into the clamp capacitor. Use Value: Its -150 V rating withstands reflected output voltage plus leakage spike; low Q_g ensures precise timing alignment with primary switch dead time.	Use Scenario: Auxiliary isolated bias supply for SiC or GaN gate drivers in industrial motor drives, requiring compact, high-reliability HV switching. IC Role / Device Role / Timing Role: SI1411DH-T1-E3 acts as the synchronous rectifier or clamp element in a self-oscillating or driven auxiliary flyback stage. Use Value: SC-70 footprint fits tight layout constraints; low IDSS ensures minimal standby loss; robust V_DS rating supports >60 V transient tolerance.
High-Voltage Sensor Interface	Programmable Current Limiter
Use Scenario: Isolated current/voltage sensing front-end in battery management systems where primary-side components must tolerate >100 V common-mode transients. IC Role / Device Role / Timing Role: SI1411DH-T1-E3 serves as a protected high-side switch controlling signal path enablement or fault isolation. Use Value: -150 V V_DS and <1 µA IDSS allow safe operation under sustained HV bias; small package avoids creepage compromises.	Use Scenario: Adjustable current-limit circuit protecting low-power analog or digital ICs from overload in telecom line cards or IoT edge nodes. IC Role / Device Role / Timing Role: SI1411DH-T1-E3 operates in linear mode as a programmable series pass element, controlled by external op-amp feedback. Use Value: Tight V_GS(th) distribution (-2.5 to -4.5 V) enables accurate current threshold setting; low R_DS(on) minimizes dropout voltage.

Active Clamp Flyback Converter

Isolated Gate Driver Bias Supply

Use Scenario: High-efficiency 24–48 V input flyback converter with active clamp reset to recover leakage energy and reduce voltage stress on main switch.

IC Role / Device Role / Timing Role: SI1411DH-T1-E3 functions as the active clamp switch, synchronously turning on during transformer reset to recycle energy into the clamp capacitor.

Use Value: Its -150 V rating withstands reflected output voltage plus leakage spike; low Q_g ensures precise timing alignment with primary switch dead time.

Use Scenario: Auxiliary isolated bias supply for SiC or GaN gate drivers in industrial motor drives, requiring compact, high-reliability HV switching.

IC Role / Device Role / Timing Role: SI1411DH-T1-E3 acts as the synchronous rectifier or clamp element in a self-oscillating or driven auxiliary flyback stage.

Use Value: SC-70 footprint fits tight layout constraints; low IDSS ensures minimal standby loss; robust V_DS rating supports >60 V transient tolerance.

High-Voltage Sensor Interface

Programmable Current Limiter

Use Scenario: Isolated current/voltage sensing front-end in battery management systems where primary-side components must tolerate >100 V common-mode transients.

IC Role / Device Role / Timing Role: SI1411DH-T1-E3 serves as a protected high-side switch controlling signal path enablement or fault isolation.

Use Value: -150 V V_DS and <1 µA IDSS allow safe operation under sustained HV bias; small package avoids creepage compromises.

Use Scenario: Adjustable current-limit circuit protecting low-power analog or digital ICs from overload in telecom line cards or IoT edge nodes.

IC Role / Device Role / Timing Role: SI1411DH-T1-E3 operates in linear mode as a programmable series pass element, controlled by external op-amp feedback.

Use Value: Tight V_GS(th) distribution (-2.5 to -4.5 V) enables accurate current threshold setting; low R_DS(on) minimizes dropout voltage.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel high-voltage MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si1413DH-T1-E3	Same SC-70 package, but -200 V V_DS, 4.5 Ω R_DS(on) @ -10 V, higher Q_g (6.3 nC)	Better for >150 V bus designs; trade-off is higher conduction loss and slower switching	Select when system requires margin beyond -150 V, and lower R_DS(on) is secondary to voltage rating
DMN2011UFD-7	6-pin TSOP-6 package, -200 V, 3.5 Ω R_DS(on) @ -10 V, Q_g = 5.5 nC, no copper leadframe	Larger footprint (3.05 × 1.6 mm vs. 2.0 × 2.1 mm); higher R_thJA (~130 °C/W)	Choose if existing layout accommodates TSOP-6 and thermal budget allows higher R_thJA

Compared with SI1411DH-T1-E3, Si1413DH-T1-E3 offers higher voltage headroom at the cost of conduction efficiency, while DMN2011UFD-7 provides similar voltage rating in a larger package with inferior thermal performance-making SI1411DH-T1-E3 optimal for space- and thermally constrained 150 V clamp applications.

Availability

SI1411DH-T1-E3 is available at Aetrix Electronics and suitable for active clamp DC-DC converters, isolated auxiliary supplies, high-voltage sensor interfaces, and programmable current limiters requiring stable component supply and Pb-free compliance.

Supply support for SI1411DH-T1-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, optoelectronics, and passive components with emphasis on power efficiency and reliability.

The SI14xxDH family targets high-voltage, space-constrained power management applications, specifically engineered for active clamp topologies and auxiliary power stages where low gate charge, tight threshold control, and thermally optimized packaging are critical.

FAQ

What is the maximum continuous drain current for SI1411DH-T1-E3 at 85 °C ambient?

The SI1411DH-T1-E3 supports -0.38 A continuous drain current at T_A = 85 °C under steady-state conditions on a 1" × 1" FR4 board. This derating reflects thermal limits imposed by its R_thJA of 100 °C/W and maximum junction temperature of 150 °C. Designers must verify PCB copper area and airflow to sustain this current in actual layouts. The SI1411DH-T1-E3 datasheet specifies this value in the Absolute Maximum Ratings table under "Continuous Drain Current (T_J = 150 °C)".

Does SI1411DH-T1-E3 have avalanche capability, and how is it rated?

Yes, the SI1411DH-T1-E3 is rated for single-pulse avalanche with I_AS = -2.1 A and E_AS = 0.22 mJ under L = 0.1 mH test conditions. This capability allows it to safely absorb inductive energy during active clamp transitions without destructive breakdown. The SI1411DH-T1-E3 avalanche rating is verified per JEDEC standards and documented in the Absolute Maximum Ratings section of its official Vishay datasheet (Document Number: 73242).

What is the gate threshold voltage range for SI1411DH-T1-E3, and why does it matter for design?

The SI1411DH-T1-E3 has a guaranteed V_GS(th) range of -2.5 V to -4.5 V at I_D = -100 µA. This tight distribution ensures predictable turn-on behavior across temperature and process variation, critical for timing-critical active clamp circuits where premature or delayed conduction could cause shoot-through or voltage overshoot. The SI1411DH-T1-E3 specification supports robust gate drive design using standard -5 V logic rails without requiring overvoltage margins.

Can SI1411DH-T1-E3 be used in linear mode for adjustable current limiting?

Yes, the SI1411DH-T1-E3 is suitable for linear-mode operation due to its specified on-state drain current (I_D(on) = -0.8 A at V_DS = -15 V, V_GS = -10 V) and well-characterized R_DS(on) behavior. Its low thermal resistance (R_thJF = 34 °C/W) helps manage power dissipation during extended linear operation. When used as a current limiter, the SI1411DH-T1-E3 benefits from tight V_GS(th) control to set accurate trip thresholds-verified in Vishay's Transfer Characteristics curves.

What is the marking code for SI1411DH-T1-E3, and how is it decoded?

The SI1411DH-T1-E3 is marked on the top surface with "BG" followed by a two-digit lot code (XX) and two-digit date code (YY), per Vishay's standard SOT-363 labeling convention. "BG" uniquely identifies the Si1411DH die variant within Vishay's SC-70 product family. The full SI1411DH-T1-E3 part number corresponds to the Pb-free, tape-and-reel packaged version with halogen-free compliance optional (denoted by -GE3 suffix). Marking verification is confirmed in the Package Information section of Document Number 73242.

SI1411DH-T1-E3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: 6-TSSOP, SC-88, SOT-363

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 150 V

Current - Continuous Drain (Id) @ 25°C:: 420mA (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 2.6Ohm @ 500mA, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 100µA

Gate Charge (Qg) (Max) @ Vgs:: 6.3 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: 1W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SC-70-6

SI1411DH-T1-E3 FAQ

1.How can I place an order for SI1411DH-T1-E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI1411DH-T1-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI1411DH-T1-E3 reliable?

The price and inventory of SI1411DH-T1-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI1411DH-T1-E3 is usually 5 days.

3.What payment methods are accepted for SI1411DH-T1-E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI1411DH-T1-E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI1411DH-T1-E3?

SI1411DH-T1-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI1411DH-T1-E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI1411DH-T1-E3?

For technical support, including SI1411DH-T1-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI1411DH-T1-E3 requirements.

6.How does Aetrix verify that SI1411DH-T1-E3 is sourced from the original manufacturer or authorized distributors?

All SI1411DH-T1-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI1411DH-T1-E3 meets industry standards.

7.What is the process for return or replacement of SI1411DH-T1-E3?

All SI1411DH-T1-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SI1411DH-T1-E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI1411DH-T1-E3 part is unused and in its original packaging.

Return procedure for SI1411DH-T1-E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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