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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI1413DH-T1-E3

Name: SI1413DH-T1-E3
Brand: Vishay Siliconix
SKU: SI1413DH-T1-E3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI1413DH-T1-E3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: 6-TSSOP, SC-88, SOT-363

Datasheet:: SI1413DH-T1-E3.pdf

Description:: MOSFET P-CH 20V 2.3A SC70-6

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Product details

Overview

SI1413DH-T1-E3 from Vishay Siliconix is a P-channel enhancement-mode TrenchFET® power MOSFET in thermally enhanced SC-70 (SOT-363) package, rated for -20 V V_DS, 0.115 Ω R_DS(on) at V_GS = -4.5 V, and -2.9 A continuous drain current at T_A = 25 °C. It serves as a low-voltage load switch in space-constrained portable electronics.

For engineers reviewing the SI1413DH-T1-E3 datasheet, SI1413DH-T1-E3 pinout, SI1413DH-T1-E3 application, or SI1413DH-T1-E3 equivalent, key selection criteria include its 1.8 V gate threshold compatibility, thermally optimized SC-70 footprint, -20 V blocking capability, and verified performance in battery-powered PA switching and level translation circuits.

Technical Context

This device operates as a single P-channel MOSFET with trench-based silicon architecture enabling low on-resistance at logic-level gate drive. Its gate threshold voltage of -0.45 to -0.8 V ensures reliable turn-on with 1.8 V–2.5 V control signals, while the integrated body diode supports bidirectional current handling in load-switch configurations.

The SC-70 (6-lead) package features dual-drain paralleling (pins 1,2,4,5) and thermal enhancement via exposed drain pads, delivering R_thJA = 100 °C/W (steady-state) and R_thJF = 34 °C/W - critical for sustained operation in compact DC-DC and RF front-end modules.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-20 V - Maximum drain-source blocking voltage for 3.3 V/5 V system rail isolation
R_DS(on)	0.115 Ω at V_GS = -4.5 V - Enables <100 mW conduction loss at 2.9 A load current
I_D (continuous)	-2.9 A at T_A = 25 °C - Supports high-side switching in USB OTG and battery protection circuits
V_GS(th)	-0.45 to -0.8 V - Guarantees turn-on with 1.8 V microcontroller GPIO without level shifter
Q_g	6–8.5 nC - Low gate charge enables fast switching (<50 ns rise/fall) with minimal driver loading
P_D	1.56 W at T_A = 25 °C - Sustains >2 A loads on standard FR4 PCB without heatsink
T_J range	-55 to +150 °C - Qualified for industrial temperature operation in handheld and IoT edge nodes

Pinout & Package

SC-70 (SOT-363) 6-lead surface-mount package with thermally enhanced drain pad layout; pins 1, 2, 4, and 5 are internally connected to drain, pin 3 is gate, and pin 6 is source.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 4, 5	Drain (D)	Paralleled terminals reduce effective R_DS(on) and improve thermal dissipation to PCB copper
3	Gate (G)	Control input requiring ≤100 nA leakage; compatible with 1.8 V CMOS logic thresholds
6	Source (S)	Reference node for gate drive; connects to system ground or floating rail in high-side configuration

Key Features

Feature	Design Value
TrenchFET® architecture	Delivers 0.115 Ω R_DS(on) at -4.5 V in 2.2 mm × 2.2 mm footprint - 30% lower on-resistance than planar equivalents
Thermally enhanced SC-70	R_thJF = 34 °C/W enables 1.4 A continuous diode conduction without derating on 1" × 1" FR4 board
1.8 V gate rating	Guaranteed turn-on at V_GS = -1.8 V (R_DS(on) = 0.220 Ω), supporting direct interface with ultra-low-voltage MCUs
Halogen-free & RoHS-compliant	Meets IEC 61249-2-21 and Directive 2002/95/EC - suitable for consumer and medical end-equipment

Applications

Battery-Powered Load Switching	RF Power Amplifier Switching
Use Scenario: Enabling/disabling power to peripheral ICs (e.g., sensors, transceivers) in wearables and Bluetooth headsets during sleep mode. IC Role / Device Role: High-side P-channel MOSFET controlling V_BAT delivery with zero static current draw when off. Use Value: Achieves <1 µA off-state leakage (IDSS ≤ -1 µA), extending battery life by >20% in multi-week standby cycles.	Use Scenario: Transmit/receive path switching in 2.4 GHz ISM-band RF modules using discrete PA and LNA stages. IC Role / Device Role: Fast-switching antenna switch with integrated body diode for reverse-current clamping during T/R transitions. Use Value: 13–20 ns turn-on delay and 32–50 ns rise time ensure <50 ns switching window, minimizing RF signal disruption.
Logic-Level Level Translation	USB OTG Power Control
Use Scenario: Converting 1.8 V GPIO signals to 3.3 V or 5 V rail control in mixed-voltage SoC subsystems. IC Role / Device Role: Voltage-translating high-side switch with gate driven by low-voltage controller and drain tied to higher supply rail. Use Value: -0.45 V minimum V_GS(th) ensures robust turn-on margin across process/voltage/temperature corners.	Use Scenario: Controlling VBUS power delivery in dual-role USB devices where host/peripheral role changes dynamically. IC Role / Device Role: Reverse-polarity protected, current-limited power switch between battery and USB port. Use Value: -20 V V_DS rating withstands USB transient surges; R_DS(on) stability over -55 to +150 °C ensures consistent current limiting.

Battery-Powered Load Switching

RF Power Amplifier Switching

Use Scenario: Enabling/disabling power to peripheral ICs (e.g., sensors, transceivers) in wearables and Bluetooth headsets during sleep mode.

IC Role / Device Role: High-side P-channel MOSFET controlling V_BAT delivery with zero static current draw when off.

Use Value: Achieves <1 µA off-state leakage (IDSS ≤ -1 µA), extending battery life by >20% in multi-week standby cycles.

Use Scenario: Transmit/receive path switching in 2.4 GHz ISM-band RF modules using discrete PA and LNA stages.

IC Role / Device Role: Fast-switching antenna switch with integrated body diode for reverse-current clamping during T/R transitions.

Use Value: 13–20 ns turn-on delay and 32–50 ns rise time ensure <50 ns switching window, minimizing RF signal disruption.

Logic-Level Level Translation

USB OTG Power Control

Use Scenario: Converting 1.8 V GPIO signals to 3.3 V or 5 V rail control in mixed-voltage SoC subsystems.

IC Role / Device Role: Voltage-translating high-side switch with gate driven by low-voltage controller and drain tied to higher supply rail.

Use Value: -0.45 V minimum V_GS(th) ensures robust turn-on margin across process/voltage/temperature corners.

Use Scenario: Controlling VBUS power delivery in dual-role USB devices where host/peripheral role changes dynamically.

IC Role / Device Role: Reverse-polarity protected, current-limited power switch between battery and USB port.

Use Value: -20 V V_DS rating withstands USB transient surges; R_DS(on) stability over -55 to +150 °C ensures consistent current limiting.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel load switch applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si1411DH-T1-E3	Higher R_DS(on) (0.145 Ω @ -4.5 V); identical SC-70 package and pinout	Suitable for lower-current (<2 A) loads where thermal margin is less constrained	Select when cost sensitivity outweighs on-resistance requirement and peak load current remains ≤2.0 A
DMN2013LFG-7	Lower V_DS (-12 V); 0.125 Ω R_DS(on) @ -4.5 V; same SOT-363 footprint but non-identical pin mapping	Optimized for 12 V systems; not drop-in due to gate/source pin reversal	Choose only if redesigning layout for 12 V rails and accepting revalidation of gate drive timing

Compared with SI1413DH-T1-E3, Si1411DH-T1-E3 offers cost savings at the expense of 26% higher conduction loss, while DMN2013LFG-7 trades voltage rating and pin compatibility for slightly better thermal resistance - making SI1413DH-T1-E3 optimal for 20 V, space-limited, 1.8 V–controlled load switching.

Availability

SI1413DH-T1-E3 is available at Aetrix Electronics and suitable for battery management systems, portable RF modules, USB OTG power controllers, and logic-level voltage translators requiring stable component supply and full RoHS/halogen-free compliance.

Supply support for SI1413DH-T1-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, optoelectronics, and passive components with emphasis on power efficiency and reliability.

The Si1413DH product line targets ultra-compact, low-voltage power switching in portable and wireless applications - engineered specifically for 1.8 V–4.5 V gate drive compatibility and thermally constrained SC-70 layouts.

FAQ

What is the maximum continuous drain current for SI1413DH-T1-E3 at 85 °C ambient?

The SI1413DH-T1-E3 supports -2.0 A continuous drain current at T_A = 85 °C, derated from -2.3 A at 25 °C per its absolute maximum ratings table. This value assumes surface mounting on a 1" × 1" FR4 board with standard copper pour, and accounts for thermal resistance R_thJA = 100 °C/W under steady-state conditions. The SI1413DH-T1-E3 maintains safe operation within its -55 to +150 °C junction temperature range at this current level.

Does SI1413DH-T1-E3 have a specified total gate charge value?

Yes, the SI1413DH-T1-E3 has a total gate charge (Q_g) of 6–8.5 nC, measured at V_DS = -10 V, V_GS = -4.5 V, and I_D = -2.9 A. This parameter directly determines switching speed and driver power requirements. The SI1413DH-T1-E3's low Q_g enables efficient operation with minimal gate driver losses in high-frequency load-switching applications.

Is SI1413DH-T1-E3 pin-compatible with other SC-70 packaged P-channel MOSFETs?

The SI1413DH-T1-E3 uses a standard SC-70 (SOT-363) pinout: pins 1/2/4/5 = Drain, pin 3 = Gate, pin 6 = Source. While physically compatible with other SOT-363 devices, true pin compatibility requires matching terminal assignments - e.g., Si1411DH-T1-E3 shares identical pin mapping, but DMN2013LFG-7 reverses gate and source. Always verify pin functions in the respective datasheet before substitution. The SI1413DH-T1-E3 marking code "BC" further confirms its identity on-board.

What is the typical on-resistance of SI1413DH-T1-E3 at V_GS = -2.5 V?

The SI1413DH-T1-E3 exhibits a typical R_DS(on) of 0.125 Ω at V_GS = -2.5 V and I_D = -2.4 A, with a maximum of 0.155 Ω under the same conditions. This performance confirms its suitability for 2.5 V logic-driven applications such as microcontroller-controlled power gating. The SI1413DH-T1-E3 maintains stable on-resistance across its full operating temperature range, supporting consistent load regulation in thermally variable environments.

Can SI1413DH-T1-E3 be used in reverse-biased diode configurations?

Yes, the SI1413DH-T1-E3 integrates a body diode with V_SD = -0.8 to -1.1 V at I_S = -1.4 A and V_GS = 0 V, enabling use in reverse-current protection and freewheeling paths. Its diode forward voltage and recovery characteristics are characterized in the datasheet, and the SI1413DH-T1-E3's low R_DS(on) minimizes conduction loss during diode conduction. This makes the SI1413DH-T1-E3 appropriate for bidirectional power routing in USB OTG and battery backup circuits.

SI1413DH-T1-E3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: 6-TSSOP, SC-88, SOT-363

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 2.3A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 1.8V, 4.5V

Rds On (Max) @ Id, Vgs:: 115mOhm @ 2.9A, 4.5V

Vgs(th) (Max) @ Id:: 800mV @ 100µA

Gate Charge (Qg) (Max) @ Vgs:: 8.5 nC @ 4.5 V

Vgs (Max):: ±8V

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: 1W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SC-70-6

SI1413DH-T1-E3 FAQ

1.How can I place an order for SI1413DH-T1-E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI1413DH-T1-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI1413DH-T1-E3 reliable?

The price and inventory of SI1413DH-T1-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI1413DH-T1-E3 is usually 5 days.

3.What payment methods are accepted for SI1413DH-T1-E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI1413DH-T1-E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI1413DH-T1-E3?

SI1413DH-T1-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI1413DH-T1-E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI1413DH-T1-E3?

For technical support, including SI1413DH-T1-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI1413DH-T1-E3 requirements.

6.How does Aetrix verify that SI1413DH-T1-E3 is sourced from the original manufacturer or authorized distributors?

All SI1413DH-T1-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI1413DH-T1-E3 meets industry standards.

7.What is the process for return or replacement of SI1413DH-T1-E3?

All SI1413DH-T1-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SI1413DH-T1-E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI1413DH-T1-E3 part is unused and in its original packaging.

Return procedure for SI1413DH-T1-E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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