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Vishay Siliconix SI1413EDH-T1-E3
- Part No.:
- SI1413EDH-T1-E3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- 6-TSSOP, SC-88, SOT-363
- Datasheet:
-
SI1413EDH-T1-E3.pdf
- Description:
- MOSFET P-CH 20V 2.3A SC70-6
- Quantity:
- Payment:
- Shipping:
Inventory:3,852
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Product details
Overview
SI1413EDH-T1-E3 from Vishay Siliconix is a P-channel enhancement-mode TrenchFET® power MOSFET rated for -20 V drain-source voltage, 0.115 Ω RDS(on) at VGS = -4.5 V, and -2.9 A continuous drain current at TA = 25 °C. It features thermally enhanced SC-70 (SOT-363) packaging, 3000 V HBM ESD protection, and 1.8 V gate threshold compatibility-optimized for low-voltage load switching in space-constrained portable electronics.
For engineers reviewing the SI1413EDH-T1-E3 datasheet, SI1413EDH-T1-E3 pinout, SI1413EDH-T1-E3 application, or SI1413EDH-T1-E3 equivalent, key selection criteria include verified RDS(on) at 1.8 V/2.5 V gate drive, thermal resistance to ambient (RthJA ≤ 125 °C/W), SC-70 package footprint compatibility, and guaranteed -20 V VDS rating under pulsed and steady-state conditions.
Technical Context
This device operates as a single P-channel switch with gate threshold voltage (VGS(th)) of -0.45 V (typical), enabling reliable turn-on with low-voltage logic-level control. Its trench-based silicon structure delivers low on-resistance while maintaining robust avalanche ruggedness and fast switching performance (td(on) = 0.75 µs, tf = 3.9 µs).
The SC-70-6 package integrates three drain terminals (pins 1, 2, 4), one source (pin 5), and one gate (pin 3), supporting high-current density and improved thermal conduction to PCB copper. Absolute maximum ratings include ±12 V gate-source voltage and -55 °C to +150 °C operating junction temperature range.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -20 V - Maximum blocking voltage for low-side or high-side load switching up to 20 V rail |
| RDS(on) @ VGS = -4.5 V | 0.115 Ω - Enables <100 mW conduction loss at 1 A load current |
| ID (continuous, TA = 25 °C) | -2.9 A - Sustained switching capability on standard FR4 without forced airflow |
| VGS(th) | -0.45 V (typ) - Ensures full enhancement with 1.8 V logic outputs or battery-backed controllers |
| Qg | 5.6 nC (typ) - Supports efficient 1–5 MHz PWM operation with minimal gate driver power demand |
| RthJA (steady state) | 125 °C/W - Requires ≥1 cm² of 2-oz copper pour for safe operation at full ID |
| ESD Rating | 3000 V HBM - Eliminates need for external ESD protection in handheld interface paths |
Pinout & Package
Package: SC-70 (SOT-363), 6-lead surface-mount, thermally enhanced with three paralleled drain terminals for reduced package inductance and improved heat spreading.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 4 | Drain (D) | Three internally connected drain terminals - reduce current density per bond wire and lower effective RDS(on) contribution from package |
| 3 | Gate (G) | Control input - accepts logic-level gate drive; requires no level-shifting for 1.8 V/2.5 V microcontrollers |
| 5 | Source (S) | Power return path - connects directly to ground plane; critical for stable switching waveform integrity |
| 6 | Drain (D) | Fourth drain terminal - completes symmetrical layout for balanced thermal distribution across package body |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® architecture | Delivers 0.115 Ω RDS(on) at -4.5 V in SC-70 - 30 % lower on-resistance than planar P-MOSFETs in same footprint |
| Thermally enhanced SC-70 | RthJF = 34 °C/W (typ) - enables 1.5× higher power density vs. standard SOT-23 for same board area |
| 1.8 V gate-rated | Guaranteed turn-on at VGS = -1.8 V (RDS(on) ≤ 0.22 Ω @ ID = -1.0 A) - supports direct drive from Li-ion battery systems |
| 3000 V HBM ESD protection | Qualified per JESD22-A114 - eliminates external TVS diodes in USB, audio, and sensor interface load switches |
| Halogen-free & RoHS-compliant | Meets IEC 61249-2-21 and Directive 2002/95/EC - supports green manufacturing and export compliance without derating |
Applications
| Battery-Powered Load Switching | RF Power Amplifier Bias Control |
|---|---|
|
Use Scenario: Discrete power gating of Bluetooth SoC peripherals in wearables to extend battery life between charges. IC Role / Device Role: High-side P-channel load switch controlling 3.3 V supply to BLE transceiver and sensors. Use Value: 0.115 Ω RDS(on) limits dropout to <330 mV at 2.9 A peak, preserving system efficiency while enabling rapid enable/disable via GPIO. |
Use Scenario: Enabling/disabling bias voltage to GaAs pHEMT power amplifier stages in cellular IoT modules. IC Role / Device Role: Precision-controlled current sink for PA collector bias regulation during transmit/receive transitions. Use Value: Fast 3.9 µs fall time ensures clean RF carrier suppression, minimizing spectral regrowth and adjacent channel leakage. |
| Low-Voltage Level Translation | USB Port Power Management |
|
Use Scenario: Shifting 1.8 V logic signals to 5 V domains in mixed-voltage MCU subsystems with isolated ground references. IC Role / Device Role: Bidirectional level translator using back-to-back P-MOSFET configuration with shared gate control. Use Value: Matched VGS(th) (-0.45 V typ) and low Ciss (320 pF) ensure sub-10 ns propagation delay and minimal signal distortion. |
Use Scenario: Overcurrent-protected VBUS switching in USB 2.0 client ports for industrial HMIs and medical devices. IC Role / Device Role: Primary current-limiting switch with integrated thermal shutdown behavior via RDS(on) self-sensing. Use Value: RthJA = 125 °C/W allows accurate thermal foldback at 1.5 A without external sense resistor or IC. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel load switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN2011UFG-7 | RDS(on) = 0.125 Ω @ -4.5 V; SOT-363 package; VGS(th) = -0.7 V (min) | Higher gate threshold requires ≥2.5 V logic drive; less suitable for 1.8 V systems | Prefer when gate drive margin >2.5 V exists and tighter VGS(th) tolerance is needed |
| AO3413 | RDS(on) = 0.09 Ω @ -4.5 V; SOT-23 package; RthJA = 190 °C/W (higher thermal resistance) | Larger RthJA limits continuous current to ~1.8 A on same PCB area | Choose only if SC-70 footprint unavailable and thermal derating acceptable |
Compared with DMN2011UFG-7 and AO3413, SI1413EDH-T1-E3 uniquely balances 1.8 V gate compatibility, SC-70 thermal performance, and production-ready halogen-free compliance-making it optimal for compact, battery-critical designs where gate drive voltage headroom is constrained.
Availability
SI1413EDH-T1-E3 is available at Aetrix Electronics and suitable for battery-powered load switching, RF PA bias control, low-voltage level translation, and USB port power management requiring stable component supply across high-mix production runs.
Supply support for SI1413EDH-T1-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, optoelectronics, and passive components with emphasis on reliability and performance in harsh environments.
The Si1413EDH series belongs to Vishay's TrenchFET® low-voltage P-channel portfolio, engineered specifically for space-constrained, energy-sensitive applications such as portable medical devices, wearables, and wireless sensor nodes.
FAQ
What is the maximum continuous drain current for SI1413EDH-T1-E3 at 85 °C ambient?
The SI1413EDH-T1-E3 supports -2.0 A continuous drain current at TA = 85 °C on a standard 1" × 1" FR4 board. This value is derived from its 0.81 W maximum power dissipation rating at that temperature and accounts for thermal derating due to increased RDS(on) and reduced heat transfer efficiency.
Does SI1413EDH-T1-E3 require a gate pull-up resistor in high-side switch configurations?
Yes - SI1413EDH-T1-E3 is a P-channel MOSFET and must be used with an external gate pull-up resistor (typically 10–100 kΩ) to ensure proper turn-off when driven by open-drain or low-voltage logic. The device lacks internal gate termination, and floating gate conditions may cause unintended conduction or shoot-through in bridge circuits.
Can SI1413EDH-T1-E3 be used in parallel with identical units for higher current handling?
No - SI1413EDH-T1-E3 is not characterized for paralleling. Its negative temperature coefficient of RDS(on) can cause current imbalance under thermal stress, and mismatched VGS(th) across units may lead to uneven sharing. For higher current, select a single larger-package P-MOSFET or use active current balancing circuitry.
What is the typical gate charge (Qg) of SI1413EDH-T1-E3 and how does it affect switching speed?
The SI1413EDH-T1-E3 has a typical total gate charge (Qg) of 5.6 nC at VDS = -10 V and VGS = -4.5 V. With a 6 Ω gate resistor, this yields ~34 ns rise/fall time contribution - making it suitable for PWM frequencies up to 2 MHz without excessive gate driver losses or ringing.
Is SI1413EDH-T1-E3 qualified for automotive applications per AEC-Q101?
No - SI1413EDH-T1-E3 is not AEC-Q101 qualified. It is intended for commercial and industrial applications only. Vishay offers AEC-Q101 variants under different part numbers (e.g., Si1413EDH-T1-GE3 with extended qualification), but SI1413EDH-T1-E3 itself carries no automotive qualification documentation or test reports.
SI1413EDH-T1-E3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- 6-TSSOP, SC-88, SOT-363
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 2.3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 115mOhm @ 2.9A, 4.5V
- Vgs(th) (Max) @ Id:
- 450mV @ 100µA (Min)
- Gate Charge (Qg) (Max) @ Vgs:
- 8 nC @ 4.5 V
- Vgs (Max):
- ±12V
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- -
- Power Dissipation (Max):
- 1W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SC-70-6
SI1413EDH-T1-E3 FAQ
1.How can I place an order for SI1413EDH-T1-E3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI1413EDH-T1-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI1413EDH-T1-E3 reliable?
The price and inventory of SI1413EDH-T1-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI1413EDH-T1-E3 is usually 5 days.
3.What payment methods are accepted for SI1413EDH-T1-E3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI1413EDH-T1-E3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI1413EDH-T1-E3?
SI1413EDH-T1-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI1413EDH-T1-E3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI1413EDH-T1-E3?
For technical support, including SI1413EDH-T1-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI1413EDH-T1-E3 requirements.
6.How does Aetrix verify that SI1413EDH-T1-E3 is sourced from the original manufacturer or authorized distributors?
All SI1413EDH-T1-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI1413EDH-T1-E3 meets industry standards.
7.What is the process for return or replacement of SI1413EDH-T1-E3?
All SI1413EDH-T1-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SI1413EDH-T1-E3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI1413EDH-T1-E3 part is unused and in its original packaging.
Return procedure for SI1413EDH-T1-E3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SI1413EDH-T1-E3 Tags
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