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Vishay Siliconix SI1414DH-T1-GE3
- Part No.:
- SI1414DH-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- 6-TSSOP, SC-88, SOT-363
- Datasheet:
-
SI1414DH-T1-GE3.pdf
- Description:
- MOSFET N-CH 30V 4A SOT-363
- Quantity:
- Payment:
- Shipping:
Inventory:7,978
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Product details
Overview
SI1414DH-T1-GE3 from Vishay Siliconix is an N-channel 30 V TrenchFET® power MOSFET in SOT-363 (SC-70 6-lead) package, delivering 4 A continuous drain current at TJ = 150 °C, RDS(on) of 0.046 Ω at VGS = 4.5 V, and 5.7 nC total gate charge - optimized for high-efficiency DC/DC and boost converter load switching.
For engineers reviewing the SI1414DH-T1-GE3 datasheet, SI1414DH-T1-GE3 pinout, SI1414DH-T1-GE3 application, or SI1414DH-T1-GE3 equivalent, this page provides verified device identity, thermal performance data (RthJA = 80 °C/W max), drain-source voltage rating (30 V), gate threshold range (0.4–1.0 V), and validated alternative options for compact power-switching designs.
Technical Context
This MOSFET employs trench-gate silicon technology to achieve low on-resistance with fast switching dynamics: Qg = 5.7 nC at VGS = 4.5 V, td(on) = 6 ns, and tr = 10 ns under standard test conditions. Its four-drain-terminal configuration enhances thermal conduction and reduces effective RDS(on).
The device operates across -55 to +150 °C junction temperature range, supports ±8 V gate drive, and features a body diode with VSD = 0.8 V (typ.) at IS = 3.5 A and trr = 15 ns - enabling synchronous rectification and bidirectional current handling in compact converters.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - maximum blocking voltage for 24 V rail and 12 V automotive auxiliary systems |
| RDS(on) | 0.046 Ω at VGS = 4.5 V - enables <185 mW conduction loss at 4 A, critical for thermally constrained PCBs |
| ID (continuous) | 4 A at TA = 25 °C - supports medium-power load switching without external heatsinking |
| Qg | 5.7 nC at VGS = 4.5 V - allows efficient gate drive with low-current controllers (e.g., microcontroller GPIO) |
| RthJA | 80 °C/W max - defines worst-case thermal rise on standard FR4; requires ≤1.56 W dissipation at 25 °C ambient |
| VGS(th) | 0.4–1.0 V - ensures reliable turn-on with 1.8 V and 2.5 V logic-level drivers |
| Ciss | 560 pF - determines input capacitance loading on gate driver; impacts switching speed and EMI profile |
Pinout & Package
SOT-363 (SC-70 6-lead) package with copper leadframe - 2.0 mm × 2.1 mm footprint, 0.95 mm height, four dedicated drain terminals for enhanced thermal and electrical performance.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Drain | Primary current-carrying terminal; electrically and thermally tied to pins 2, 4, and 6 |
| 2 | Drain | Parallel drain path reducing effective RDS(on) and improving heat spreading to PCB |
| 3 | Gate | Control input; accepts 1.8–8 V logic-level drive; 100 % Rg tested for consistency |
| 4 | Drain | Additional drain connection; contributes to lower thermal resistance (RthJF = 45 °C/W max) |
| 5 | Source | Reference node for gate drive and current sensing; common return for body diode conduction |
| 6 | Drain | Fourth drain terminal; enables symmetric layout and reduced parasitic inductance in high-frequency switching |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® construction | Enables 0.046 Ω RDS(on) at 4.5 V gate drive - reduces conduction losses in space-constrained 3.3 V/5 V control domains |
| Four-drain-terminal SC-70 package | Lowers RthJA by ~36% vs. Alloy 42 versions - improves power density and eliminates need for thermal vias in many layouts |
| 100 % Rg tested | Ensures gate resistance between 0.6–6 Ω - guarantees consistent switching timing and EMI behavior across production lots |
| Low VGS(th) range (0.4–1.0 V) | Supports direct drive from 1.8 V microcontrollers without level-shifting - simplifies system BOM and layout |
| Body diode trr = 15 ns (typ.) | Minimizes reverse recovery loss in synchronous buck topologies - critical for >500 kHz converter efficiency |
Applications
| DC/DC Converters | Boost Converters |
|---|---|
Use Scenario: Step-down regulation in portable medical monitors with 3.3 V output from single-cell Li-ion input. IC Role / Device Role / Timing Role: Low-side synchronous rectifier switch operating at 1 MHz with 4 A peak load current. Use Value: 0.046 Ω RDS(on) limits conduction loss to <740 mW at full load, enabling fanless operation in sealed enclosures. |
Use Scenario: 5 V to 12 V boost stage powering industrial sensor transmitters from 2xAA batteries. IC Role / Device Role / Timing Role: High-side main switch with 30 V VDS rating accommodating 15 V transient spikes. Use Value: 5.7 nC Qg allows clean 1 MHz switching using low-power gate drivers, reducing quiescent current draw. |
| Load Switches | USB Power Delivery |
Use Scenario: Controlled power-up sequencing for FPGA I/O banks in edge AI inference modules. IC Role / Device Role / Timing Role: Hot-swap MOSFET with controlled slew rate via gate resistor; handles 4 A inrush. Use Value: 0.4–1.0 V VGS(th) ensures precise turn-on timing with 1.8 V enable signals - prevents brownout during ramp-up. |
Use Scenario: VBUS switching in USB-C PD sink applications requiring 3 A @ 5 V with overvoltage protection. IC Role / Device Role / Timing Role: Reverse-polarity protected load switch placed between CC controller and port connector. Use Value: Four-drain layout lowers thermal impedance to PCB, maintaining <85 °C junction temp during sustained 3 A loads. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN3026LSD-13 | RDS(on) = 0.035 Ω at VGS = 4.5 V; SO-8 package (5.0 × 6.0 mm); higher ID = 6.5 A | Requires larger PCB area; better suited for higher-current, lower-frequency (>100 kHz) applications | Select when board space permits and thermal margin must exceed 2 W dissipation |
| SI2302DS-T1-GE3 | RDS(on) = 0.075 Ω at VGS = 4.5 V; SOT-23 package (3-pin); lower Qg = 3.5 nC | Smaller footprint but higher conduction loss; limited to ≤2.5 A continuous due to thermal constraints | Select when ultra-low gate charge dominates over on-resistance in battery-powered sub-2 A systems |
Compared with SI1414DH-T1-GE3, DMN3026LSD-13 offers lower RDS(on) and higher current capacity but demands 3× more board area, while SI2302DS-T1-GE3 sacrifices 63 % higher conduction loss for 39 % lower gate charge and minimal footprint - making SI1414DH-T1-GE3 the optimal balance for 3–4 A, 500 kHz–1 MHz compact converters.
Availability
SI1414DH-T1-GE3 is available at Aetrix Electronics and suitable for DC/DC converters, boost converters, and load switches requiring stable component supply, RoHS-compliant packaging, and lead-free/halogen-free manufacturing compliance.
Supply support for SI1414DH-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on reliability, miniaturization, and thermal efficiency.
The SI1414DH-T1-GE3 belongs to Vishay's LITTLE FOOT® SC-70 family - engineered specifically for space-constrained power management in portable, industrial, and automotive subsystems where thermal performance and logic-level drive compatibility are critical.
FAQ
What is the maximum continuous drain current rating for SI1414DH-T1-GE3 at 70 °C ambient temperature?
The SI1414DH-T1-GE3 supports 3.7 A continuous drain current at TA = 70 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the SOT-363 package under natural convection on standard FR4; actual capability may improve with PCB copper area or airflow. The SI1414DH-T1-GE3 maintains its 0.046 Ω RDS(on) at VGS = 4.5 V across this range.
Does SI1414DH-T1-GE3 support 1.8 V logic-level gate drive?
Yes, SI1414DH-T1-GE3 is fully compatible with 1.8 V logic-level drive: its gate threshold voltage (VGS(th)) is specified from 0.4 V to 1.0 V, and RDS(on) is characterized at VGS = 1.8 V (0.057 Ω at ID = 1 A). This enables direct interface with modern low-voltage microcontrollers and PMICs without level shifters - a key design advantage of the SI1414DH-T1-GE3.
What is the thermal resistance from junction to ambient (RthJA) for SI1414DH-T1-GE3 under standard test conditions?
The SI1414DH-T1-GE3 has a maximum RthJA of 80 °C/W under standard test conditions (surface-mounted on 1" × 1" FR4 board, t ≤ 5 s). Its typical RthJA is 60 °C/W. This value directly determines allowable power dissipation: at TA = 25 °C, the SI1414DH-T1-GE3 can dissipate up to 1.56 W continuously before reaching TJ(max) = 150 °C.
Is SI1414DH-T1-GE3 suitable for synchronous rectification in buck converters?
Yes, SI1414DH-T1-GE3 is well-suited for synchronous rectification: its low RDS(on) (0.046 Ω), fast switching (td(on) = 6 ns, tr = 10 ns), and low reverse recovery charge (Qrr = 6 nC typ.) minimize both conduction and switching losses. The SI1414DH-T1-GE3 body diode exhibits VSD = 0.8 V and trr = 15 ns, supporting efficient operation up to 1 MHz in buck topologies.
What does the "-GE3" suffix indicate in SI1414DH-T1-GE3?
The "-GE3" suffix in SI1414DH-T1-GE3 denotes Vishay's green, lead-free, and halogen-free packaging standard compliant with JEDEC J-STD-020 and RoHS Directive 2011/65/EU. It confirms that the SI1414DH-T1-GE3 uses matte tin plating and meets material restrictions for brominated flame retardants (BFRs), antimony trioxide, and other hazardous substances.
SI1414DH-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- 6-TSSOP, SC-88, SOT-363
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 46mOhm @ 4A, 4.5V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 15 nC @ 8 V
- Vgs (Max):
- ±8V
- Input Capacitance (Ciss) (Max) @ Vds:
- 560 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.8W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SC-70-6
SI1414DH-T1-GE3 FAQ
1.How can I place an order for SI1414DH-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI1414DH-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI1414DH-T1-GE3 reliable?
The price and inventory of SI1414DH-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI1414DH-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SI1414DH-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI1414DH-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI1414DH-T1-GE3?
SI1414DH-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI1414DH-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI1414DH-T1-GE3?
For technical support, including SI1414DH-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI1414DH-T1-GE3 requirements.
6.How does Aetrix verify that SI1414DH-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SI1414DH-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI1414DH-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SI1414DH-T1-GE3?
All SI1414DH-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI1414DH-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI1414DH-T1-GE3 part is unused and in its original packaging.
Return procedure for SI1414DH-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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