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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI1422DH-T1-GE3

Name: SI1422DH-T1-GE3
Brand: Vishay Siliconix
SKU: SI1422DH-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI1422DH-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: 6-TSSOP, SC-88, SOT-363

Datasheet:: SI1422DH-T1-GE3.pdf

Description:: MOSFET N-CH 12V 4A SC70-6

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Product details

Overview

SI1422DH-T1-GE3 from Vishay Siliconix is an N-channel TrenchFET® power MOSFET in SOT-363 (SC-70) package, rated for 12 V V_DS, 4 A continuous drain current at T_F = 25 °C, 0.026 Ω R_DS(on) at V_GS = 4.5 V, and 7.5 nC total gate charge - optimized for high-frequency load switching in portable electronics.

For engineers reviewing the SI1422DH-T1-GE3 datasheet, SI1422DH-T1-GE3 pinout, SI1422DH-T1-GE3 application, or SI1422DH-T1-GE3 equivalent, this device supports low-voltage battery switching, PA enable control, and compact DC-DC converter synchronous rectification where space-constrained thermal performance and sub-1-V_GS(th) logic-level drive are required.

Technical Context

This MOSFET uses trench-gate silicon technology to achieve low on-resistance with fast switching dynamics: typical C_iss = 725 pF, C_oss = 195 pF, and Crss = 90 pF at V_DS = 6 V, enabling efficient operation above 1 MHz in buck converters. Its 0.4–1.0 V gate threshold voltage allows direct interfacing with 1.8 V and 2.5 V logic controllers without level shifting.

The device integrates four parallel drain terminals in its 6-pin SC-70 package to reduce both R_DS(on) and junction-to-foot thermal resistance (R_thJF = 34 °C/W typ.), supporting stable 4 A operation on minimal PCB copper area - critical for ultra-thin mobile and wearable power stages.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	12 V - Maximum blocking voltage compatible with single-cell Li-ion (4.2 V) and dual-cell alkaline (3 V) systems with margin.
R_DS(on)	0.026 Ω at V_GS = 4.5 V - Enables <105 mW conduction loss at 4 A, reducing thermal stress in unheatsinked layouts.
I_D (continuous)	4 A at T_F = 25 °C - Package-limited current suitable for medium-power load switches and synchronous rectifiers.
Q_g	7.5 nC at V_GS = 4.5 V - Low gate charge enables fast turn-on with minimal driver strength (e.g., GPIO-driven).
V_GS(th)	0.4–1.0 V - Guaranteed logic-level compatibility with 1.8 V microcontrollers and baseband ICs without external bias.
R_thJA	60–80 °C/W - Junction-to-ambient thermal resistance measured on 1" × 1" FR4 board, defining safe operating power envelope.
Body diode V_SD	0.8–1.2 V at I_S = 7.2 A - Low forward drop supports efficient freewheeling in synchronous buck topologies.

Pinout & Package

SOT-363 (SC-70) 6-lead surface-mount package with copper leadframe, footprint per Vishay AN826 (0.026" pitch, 2.438 mm × 1.702 mm pad pattern), optimized for thermal dissipation via four parallel drain leads.

Pin/Terminal	Circuit Role	Design Meaning
1	Drain	One of four parallel drain connections; shares current path to minimize R_DS(on) and thermal resistance.
2	Drain	Second drain terminal; electrically identical to Pin 1 - used for PCB copper spreading and thermal relief.
3	Gate	Control input; low capacitance (C_iss = 725 pF) enables fast switching with minimal gate driver loading.
4	Drain	Third drain terminal; contributes to reduced package inductance and improved high-frequency EMI behavior.
5	Drain	Fourth drain terminal; provides redundant thermal path to PCB copper, lowering effective R_thJA.
6	Source	Reference node for gate drive and current sensing; tied to system ground or low-side switch return path.

Key Features

Feature	Design Value
TrenchFET® architecture	Enables 0.026 Ω R_DS(on) at 4.5 V in SC-70 - 30% lower than comparable planar MOSFETs in same footprint.
Copper leadframe	Reduces R_thJF to 34 °C/W (vs. 163 °C/W for Alloy 42), allowing 1.01 W power dissipation at 25 °C ambient.
100 % R_g tested	Guarantees gate resistance ≤ 2.5 Ω, ensuring predictable turn-on timing and minimizing gate oscillation risk.
Halogen-free & RoHS-compliant	Meets IEC 61249-2-21 and Directive 2002/95/EC - qualified for consumer, medical, and industrial end equipment.
Low V_GS(th) distribution	0.4–1.0 V range ensures reliable turn-on across process variation when driven by 1.8 V logic outputs.

Applications

Portable Load Switching	RF Power Amplifier Enable
Use Scenario: Enabling/disabling power to camera modules, Bluetooth radios, or sensors in smartphones and wearables. IC Role / Device Role / Timing Role: High-side load switch controlling 3.3 V or 1.8 V rails with <1 µs response time and zero static current draw in off-state. Use Value: Prevents battery drain during sleep mode while maintaining fast wake-up capability due to low Q_g and logic-level V_GS(th).	Use Scenario: Turning on/off RF power amplifiers in LTE/Wi-Fi front-end modules to meet dynamic power management requirements. IC Role / Device Role / Timing Role: Fast-switching enable gate with minimal propagation delay and no shoot-through risk during state transitions. Use Value: Achieves >90 dB isolation in off-state and <10 ns transition time, preserving signal integrity in multi-band transceivers.
Battery Protection Circuitry	Synchronous Rectifier in DC-DC Converters
Use Scenario: Secondary overcurrent protection in USB-C PD power banks and portable chargers, placed between battery and output port. IC Role / Device Role / Timing Role: Low-R_DS(on) series switch with integrated body diode for reverse-current blocking and fault current limiting. Use Value: Limits fault power dissipation to <200 mW at 2 A, enabling compact layout without thermal vias or heatsinks.	Use Scenario: Bottom-side switch in 12 V input → 3.3 V/1.2 V buck converters for SoC power supplies in tablets and IoT hubs. IC Role / Device Role / Timing Role: Synchronous rectifier replacing Schottky diode to improve efficiency at light-to-moderate loads (100 mA–3 A). Use Value: Delivers >3% efficiency gain at 1 A output versus diode-based design, directly extending battery runtime in portable applications.

Portable Load Switching

RF Power Amplifier Enable

Use Scenario: Enabling/disabling power to camera modules, Bluetooth radios, or sensors in smartphones and wearables.

IC Role / Device Role / Timing Role: High-side load switch controlling 3.3 V or 1.8 V rails with <1 µs response time and zero static current draw in off-state.

Use Value: Prevents battery drain during sleep mode while maintaining fast wake-up capability due to low Q_g and logic-level V_GS(th).

Use Scenario: Turning on/off RF power amplifiers in LTE/Wi-Fi front-end modules to meet dynamic power management requirements.

IC Role / Device Role / Timing Role: Fast-switching enable gate with minimal propagation delay and no shoot-through risk during state transitions.

Use Value: Achieves >90 dB isolation in off-state and <10 ns transition time, preserving signal integrity in multi-band transceivers.

Battery Protection Circuitry

Synchronous Rectifier in DC-DC Converters

Use Scenario: Secondary overcurrent protection in USB-C PD power banks and portable chargers, placed between battery and output port.

IC Role / Device Role / Timing Role: Low-R_DS(on) series switch with integrated body diode for reverse-current blocking and fault current limiting.

Use Value: Limits fault power dissipation to <200 mW at 2 A, enabling compact layout without thermal vias or heatsinks.

Use Scenario: Bottom-side switch in 12 V input → 3.3 V/1.2 V buck converters for SoC power supplies in tablets and IoT hubs.

IC Role / Device Role / Timing Role: Synchronous rectifier replacing Schottky diode to improve efficiency at light-to-moderate loads (100 mA–3 A).

Use Value: Delivers >3% efficiency gain at 1 A output versus diode-based design, directly extending battery runtime in portable applications.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel load switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si1304DL-T1-GE3	12 V V_DS, 0.032 Ω R_DS(on) at 4.5 V, SOT-23-3 package, higher R_thJA (150 °C/W)	Single-drain configuration limits thermal handling; suitable only for <2 A continuous loads	Select when board space is constrained to 3-pin footprint and peak current ≤ 2 A
DMN10H7TIS-13	10 V V_DS, 0.022 Ω R_DS(on) at 4.5 V, X2-DFN1010-6 package, lower Q_g (5.8 nC)	Narrower voltage rating restricts use to ≤10 V systems; superior high-frequency efficiency but less margin for transient spikes	Select when operating strictly within 10 V rail and prioritizing <100 ns switching speed over voltage headroom

Compared with SI1422DH-T1-GE3, Si1304DL-T1-GE3 trades thermal robustness and current capacity for smaller footprint, while DMN10H7TIS-13 offers faster switching and lower on-resistance at the cost of reduced voltage safety margin - making SI1422DH-T1-GE3 the balanced choice for 12 V portable systems requiring reliability, efficiency, and manufacturability.

Availability

SI1422DH-T1-GE3 is available at Aetrix Electronics and suitable for portable load switching, RF amplifier enable control, and synchronous rectification in DC-DC converters requiring stable component supply and full traceability.

Supply support for SI1422DH-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix designs and manufactures discrete semiconductors including MOSFETs, diodes, and optoelectronics, with emphasis on power efficiency, miniaturization, and reliability for high-volume electronics.

The Si14xxDH family delivers logic-level N-channel MOSFETs in ultra-small SC-70 packages for space-constrained portable and battery-powered applications where low R_DS(on), low gate charge, and halogen-free compliance are mandatory.

FAQ

What is the maximum continuous drain current rating for SI1422DH-T1-GE3 at 70 °C ambient temperature?

The SI1422DH-T1-GE3 supports 4 A continuous drain current at T_F = 70 °C, as specified in the Absolute Maximum Ratings table under "Continuous Drain Current (T_J = 150 °C)" with footnote a. This rating assumes proper PCB copper area and thermal management per Vishay's recommended pad pattern in AN826.

Does SI1422DH-T1-GE3 require a gate resistor for stable switching in 1 MHz DC-DC applications?

While not mandatory, a 1–5 Ω gate resistor is recommended for SI1422DH-T1-GE3 in 1 MHz applications to dampen ringing caused by gate loop inductance and match the device's 0.5–2.5 Ω intrinsic gate resistance (R_g). The low 7.5 nC Q_g allows clean edges even with weak drivers, but external R_g improves EMI and reduces overshoot.

Can SI1422DH-T1-GE3 be used as a high-side switch with 3.3 V logic control?

Yes - SI1422DH-T1-GE3 has a guaranteed V_GS(th) of 0.4–1.0 V and R_DS(on) = 0.030 Ω at V_GS = 2.5 V, making it fully compatible with 3.3 V GPIOs. For high-side configuration, ensure the source is referenced to the switched rail and gate drive is referenced to source potential, typically using a charge pump or level-shifting circuit.

What is the thermal resistance from junction to foot (R_thJF) for SI1422DH-T1-GE3, and why does it matter?

The SI1422DH-T1-GE3 has a typical R_thJF of 34 °C/W, measured from die junction to drain foot on PCB. This parameter matters because it defines how effectively heat flows from the MOSFET die into the PCB copper - critical for sustaining 4 A current without exceeding 150 °C junction temperature in compact layouts where traditional heatsinking is impossible.

Is SI1422DH-T1-GE3 suitable for reverse polarity protection in 5 V USB-powered devices?

Yes - SI1422DH-T1-GE3 can serve as a low-loss reverse polarity protection switch in 5 V USB applications. With its 12 V V_DS rating and 0.026 Ω R_DS(on) at 4.5 V, it introduces <130 mV drop at 5 A, significantly lower than Schottky diodes. Its body diode blocks reverse current, and the logic-level gate enables direct MCU control for fault recovery sequencing.

SI1422DH-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: 6-TSSOP, SC-88, SOT-363

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 12 V

Current - Continuous Drain (Id) @ 25°C:: 4A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 1.8V, 4.5V

Rds On (Max) @ Id, Vgs:: 26mOhm @ 5.1A, 4.5V

Vgs(th) (Max) @ Id:: 1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 20 nC @ 8 V

Vgs (Max):: ±8V

Input Capacitance (Ciss) (Max) @ Vds:: 725 pF @ 6 V

FET Feature:: -

Power Dissipation (Max):: 1.56W (Ta), 2.8W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SC-70-6

SI1422DH-T1-GE3 FAQ

1.How can I place an order for SI1422DH-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI1422DH-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI1422DH-T1-GE3 reliable?

The price and inventory of SI1422DH-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI1422DH-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SI1422DH-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI1422DH-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI1422DH-T1-GE3?

SI1422DH-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI1422DH-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI1422DH-T1-GE3?

For technical support, including SI1422DH-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI1422DH-T1-GE3 requirements.

6.How does Aetrix verify that SI1422DH-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SI1422DH-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI1422DH-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SI1422DH-T1-GE3?

All SI1422DH-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI1422DH-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI1422DH-T1-GE3 part is unused and in its original packaging.

Return procedure for SI1422DH-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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