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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI1427EDH-T1-BE3

Name: SI1427EDH-T1-BE3
Brand: Vishay Siliconix
SKU: SI1427EDH-T1-BE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI1427EDH-T1-BE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: 6-TSSOP, SC-88, SOT-363

Datasheet:: SI1427EDH-T1-BE3.pdf

Description:: MOSFET P-CH 20V 2A/2A SC70-6

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Product details

Overview

SI1427EDH-T1-BE3 from Vishay Siliconix is a P-channel enhancement-mode MOSFET in SC-70 (SOT-363) package, rated for -20 V drain-source voltage, 0.064 Ω R_DS(on) at V_GS = -4.5 V, and -2 A continuous drain current. It serves as a compact, low-voltage load switch in portable power management circuits.

For engineers reviewing the SI1427EDH-T1-BE3 datasheet, SI1427EDH-T1-BE3 pinout, SI1427EDH-T1-BE3 application, or SI1427EDH-T1-BE3 equivalent, key selection criteria include its trench-based gate structure, built-in Zener ESD protection, 7.6 nC total gate charge, and thermal performance optimized via copper leadframe for high-density PCB layouts.

Technical Context

This device uses TrenchFET® technology to achieve low on-resistance with fast switching characteristics: typical Q_g = 7.6 nC at V_GS = -4.5 V and t_f = 2–3 ns under specified test conditions. Its gate threshold voltage ranges from -0.4 V to -1.0 V, enabling reliable turn-on with low-voltage logic control.

The SC-70 package features four parallel drain terminals and a copper leadframe, delivering R_thJF = 34 °C/W (typical) and R_thJA = 60 °C/W (typical, t ≤ 5 s), significantly improving thermal dissipation over Alloy 42 alternatives without increasing footprint.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-20 V - Maximum blocking voltage for low-voltage DC power rails
R_DS(on) @ V_GS = -4.5 V	0.064 Ω - Enables <130 mW conduction loss at -2 A load current
I_D (continuous)	-2 A - Supports medium-current load switching in space-constrained designs
Q_g (typ.)	7.6 nC - Low gate charge reduces drive power and enables efficient PWM control
T_J range	-55 to +150 °C - Qualified for operation across industrial and consumer ambient environments
ESD rating	2000 V HBM - Built-in Zener diode protection simplifies system-level ESD design
R_thJA (t ≤ 5 s)	60 °C/W - Thermal resistance measured on 1" × 1" FR4 board supports >1 W pulsed power handling

Pinout & Package

SC-70 (SOT-363) 6-pin surface-mount package with copper leadframe; dimensions: 2.00 mm × 2.10 mm × 1.00 mm (L × W × H); four drain leads (Pins 1, 2, 4, 6), one source (Pin 5), one gate (Pin 3).

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 4, 6	Drain (D)	Four parallel terminals reduce effective R_DS(on) and improve thermal path to PCB
3	Gate (G)	Control input requiring -4.5 V to fully enhance; low C_iss enables fast switching
5	Source (S)	Reference node for gate drive; connects to system ground or negative rail in high-side configuration

Key Features

Feature	Design Value
TrenchFET® architecture	Delivers 0.064 Ω R_DS(on) at -4.5 V in 2.0 mm × 2.1 mm footprint for high power density
Copper leadframe	Reduces R_thJF to 34 °C/W (typ.), enabling higher continuous current vs. Alloy 42 SC-70 variants
Built-in Zener ESD protection	2000 V HBM rating eliminates need for external TVS in many portable applications
100 % R_g tested	Ensures consistent gate resistance (400–4000 Ω) for predictable switching timing across production lots

Applications

Smartphone Power Management	Digital Still Camera (DSC) Load Switch
Use Scenario: Controlling power to camera flash LED or image sensor module during sleep/wake cycles. IC Role / Device Role / Timing Role: P-channel load switch enabling rapid, low-leakage power gating of peripheral subsystems. Use Value: 0.064 Ω R_DS(on) limits voltage drop to <130 mV at 2 A, preserving battery runtime and signal integrity.	Use Scenario: Isolating USB interface circuitry when the DSC is powered off to prevent back-powering. IC Role / Device Role / Timing Role: Reverse-polarity protected high-side switch disconnecting VBUS path. Use Value: -20 V V_DS rating safely handles USB 2.0/3.0 transient surges; -1.0 V V_GS(th) ensures clean turn-off with 3.3 V logic.
Portable Game Console Audio Amplifier Enable	GPS Module Power Sequencing
Use Scenario: Enabling/disabling Class D audio amplifier supply to minimize standby current. IC Role / Device Role / Timing Role: Low-threshold P-MOSFET used as active-high enable switch controlled by baseband processor. Use Value: Gate threshold of -0.4 V to -1.0 V allows full enhancement with 1.8 V I/O, reducing BOM count vs. level-shifter solutions.	Use Scenario: Sequencing power to GPS RF front-end and baseband IC after cold start. IC Role / Device Role / Timing Role: Precision-controlled load switch ensuring defined power-up timing per GNSS chipset requirements. Use Value: 7.6 nC Q_g enables sub-microsecond switching with standard GPIO drivers, supporting tight sequencing windows.

Smartphone Power Management

Digital Still Camera (DSC) Load Switch

Use Scenario: Controlling power to camera flash LED or image sensor module during sleep/wake cycles.

IC Role / Device Role / Timing Role: P-channel load switch enabling rapid, low-leakage power gating of peripheral subsystems.

Use Value: 0.064 Ω R_DS(on) limits voltage drop to <130 mV at 2 A, preserving battery runtime and signal integrity.

Use Scenario: Isolating USB interface circuitry when the DSC is powered off to prevent back-powering.

IC Role / Device Role / Timing Role: Reverse-polarity protected high-side switch disconnecting VBUS path.

Use Value: -20 V V_DS rating safely handles USB 2.0/3.0 transient surges; -1.0 V V_GS(th) ensures clean turn-off with 3.3 V logic.

Portable Game Console Audio Amplifier Enable

GPS Module Power Sequencing

Use Scenario: Enabling/disabling Class D audio amplifier supply to minimize standby current.

IC Role / Device Role / Timing Role: Low-threshold P-MOSFET used as active-high enable switch controlled by baseband processor.

Use Value: Gate threshold of -0.4 V to -1.0 V allows full enhancement with 1.8 V I/O, reducing BOM count vs. level-shifter solutions.

Use Scenario: Sequencing power to GPS RF front-end and baseband IC after cold start.

IC Role / Device Role / Timing Role: Precision-controlled load switch ensuring defined power-up timing per GNSS chipset requirements.

Use Value: 7.6 nC Q_g enables sub-microsecond switching with standard GPIO drivers, supporting tight sequencing windows.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel load switch applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si1429EDH-T1-BE3	R_DS(on) = 0.042 Ω @ -4.5 V; same SC-70 package and pinout	Lower on-resistance suits higher-current loads (>2.5 A) where thermal margin is critical	Select Si1429EDH-T1-BE3 when conduction loss must be minimized below 100 mΩ at 2 A
DMN2020LSD-13	N-channel, 20 V, R_DS(on) = 0.045 Ω @ -4.5 V; requires high-side driver or charge pump	Requires additional gate drive complexity but offers lower R_DS(on) and cost in high-volume designs	Choose DMN2020LSD-13 only if system already includes gate boosting circuitry and layout space permits

Compared with SI1427EDH-T1-BE3, Si1429EDH-T1-BE3 delivers lower conduction loss in identical footprint, while DMN2020LSD-13 demands external drive but achieves better R_DS(on); all three support portable load switching but differ in drive simplicity and thermal headroom.

Availability

SI1427EDH-T1-BE3 is available at Aetrix Electronics and suitable for smartphone power management, digital still camera load switching, and portable GPS module sequencing requiring stable component supply and long-term lifecycle continuity.

Supply support for SI1427EDH-T1-BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors and passive components, specializing in high-reliability MOSFETs, diodes, and optoelectronics for demanding industrial and consumer applications.

The SI1427EDH-T1-BE3 belongs to Vishay's LITTLE FOOT® SC-70 P-channel MOSFET family, engineered specifically for ultra-compact, thermally efficient load switching in battery-powered portable electronics.

FAQ

What is the maximum continuous drain current rating for SI1427EDH-T1-BE3?

The SI1427EDH-T1-BE3 is rated for -2 A continuous drain current at T_C = 25 °C and T_J = 150 °C, with derating applied above 25 °C case temperature per the datasheet's current derating curve. This rating assumes proper PCB copper area and thermal management per Vishay's recommended pad pattern.

Does SI1427EDH-T1-BE3 require a gate driver for 1.8 V logic control?

No, SI1427EDH-T1-BE3 does not require an external gate driver for 1.8 V logic control: its gate threshold voltage (V_GS(th)) ranges from -0.4 V to -1.0 V, allowing full enhancement with 1.8 V logic swing referenced to source. The SI1427EDH-T1-BE3 achieves 0.085 Ω R_DS(on) at V_GS = -2.5 V, confirming robust operation at low gate voltages.

What is the thermal resistance from junction to ambient for SI1427EDH-T1-BE3?

The SI1427EDH-T1-BE3 has a typical junction-to-ambient thermal resistance (R_thJA) of 60 °C/W for t ≤ 5 s on a 1" × 1" FR4 board, and a maximum of 80 °C/W under the same conditions. This value reflects the benefit of its copper leadframe SC-70 package, which improves thermal performance over legacy Alloy 42 versions.

Is SI1427EDH-T1-BE3 RoHS-compliant and halogen-free?

Yes, SI1427EDH-T1-BE3 is lead (Pb)-free and halogen-free, meeting RoHS Directive 2011/65/EU and Vishay's material compliance standards as documented in Vishay specification S11-0453-Rev. B. The "BE3" suffix explicitly denotes this environmental compliance status.

Can SI1427EDH-T1-BE3 be used in high-side switch configurations?

Yes, SI1427EDH-T1-BE3 is designed for high-side switch applications: as a P-channel MOSFET, it operates with source tied to the positive rail and gate driven relative to source. Its -20 V V_DS rating and -1.0 V maximum V_GS(th) ensure reliable turn-off with 3.3 V or lower logic levels, making SI1427EDH-T1-BE3 suitable for battery-input power path control.

SI1427EDH-T1-BE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: 6-TSSOP, SC-88, SOT-363

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 2A (Ta), 2A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: 64mOhm @ 3A, 4.5V

Vgs(th) (Max) @ Id:: 1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 21 nC @ 8 V

Vgs (Max):: ±8V

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: 1.56W (Ta), 2.8W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SC-70-6

SI1427EDH-T1-BE3 FAQ

1.How can I place an order for SI1427EDH-T1-BE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI1427EDH-T1-BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI1427EDH-T1-BE3 reliable?

The price and inventory of SI1427EDH-T1-BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI1427EDH-T1-BE3 is usually 5 days.

3.What payment methods are accepted for SI1427EDH-T1-BE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI1427EDH-T1-BE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI1427EDH-T1-BE3?

SI1427EDH-T1-BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI1427EDH-T1-BE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI1427EDH-T1-BE3?

For technical support, including SI1427EDH-T1-BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI1427EDH-T1-BE3 requirements.

6.How does Aetrix verify that SI1427EDH-T1-BE3 is sourced from the original manufacturer or authorized distributors?

All SI1427EDH-T1-BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI1427EDH-T1-BE3 meets industry standards.

7.What is the process for return or replacement of SI1427EDH-T1-BE3?

All SI1427EDH-T1-BE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI1427EDH-T1-BE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI1427EDH-T1-BE3 part is unused and in its original packaging.

Return procedure for SI1427EDH-T1-BE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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