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Vishay Siliconix SI1428EDH-T1-GE3
- Part No.:
- SI1428EDH-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- 6-TSSOP, SC-88, SOT-363
- Datasheet:
-
SI1428EDH-T1-GE3.pdf
- Description:
- MOSFET N-CHANNEL 30V 4A SC70-6
- Quantity:
- Payment:
- Shipping:
Inventory:7,364
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Product details
Overview
SI1428EDH-T1-GE3 from Vishay Siliconix is an N-channel 30 V TrenchFET® power MOSFET in a copper-leadframe SC-70 (SOT-363) package, rated for 4 A continuous drain current at TC = 25 °C, with RDS(on) = 0.045 Ω at VGS = 10 V and 4 nC typical gate charge - optimized for portable load switching and battery protection circuits.
For engineers reviewing the SI1428EDH-T1-GE3 datasheet, SI1428EDH-T1-GE3 pinout, SI1428EDH-T1-GE3 application, or SI1428EDH-T1-GE3 equivalent, key selection criteria include its low RDS(on) at 2.5–4.5 V drive, 2000 V HBM ESD rating, halogen-free RoHS compliance, and four-drain-pin thermal architecture enabling enhanced power handling in space-constrained designs.
Technical Context
This device uses Vishay's TrenchFET® process to achieve low on-resistance with fast switching performance: Qg = 4 nC (VGS = 4.5 V), td(on) = 0.29 µs (VGEN = 4.5 V), and tf = 0.75 µs. Its gate threshold voltage (VGS(th) = 0.6–1.3 V) supports logic-level drive from 2.5 V and 3.3 V microcontrollers.
The SC-70 (SOT-363) package features four dedicated drain terminals and one source terminal, enabling lower junction-to-foot thermal resistance (RthJF = 34 °C/W typ.) and improved power dissipation versus Alloy 42 leadframes - critical for thermally dense portable PCB layouts.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - supports 2-cell Li-ion battery systems (up to ~8.4 V) with margin for transients and inductive kickback |
| RDS(on) | 0.045 Ω @ VGS = 10 V - enables <180 mW conduction loss at 4 A, reducing self-heating in compact footprints |
| ID (cont) | 4 A @ TC = 25 °C - package-limited current suitable for medium-power load switches and motor drivers |
| Qg | 4 nC @ VGS = 4.5 V - allows efficient switching with low-drive-strength controllers and minimizes gate drive power |
| VGS(th) | 0.6–1.3 V - ensures reliable turn-on with 1.8 V/2.5 V/3.3 V logic outputs without level-shifting circuitry |
| ESD Rating | 2000 V HBM - provides robust handling during board assembly and end-user operation in handheld devices |
| RthJF | 34 °C/W (typ.) - four-drain-pin copper leadframe delivers 4× better thermal path to PCB than Alloy 42 equivalents |
Pinout & Package
SI1428EDH-T1-GE3 is housed in a halogen-free, RoHS-compliant SC-70 (SOT-363) package with copper leadframe, measuring 2.00 mm × 2.10 mm × 0.95 mm (L × W × H). The package features four drain leads for enhanced thermal and current-carrying capability.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Drain | Primary current-carrying terminal; electrically tied to pins 2, 4, and 6 - forms low-inductance, high-current path to PCB ground plane |
| 2 | Drain | Secondary drain connection; shares same node as pin 1 - improves thermal spreading and reduces effective RDS(on) |
| 3 | Gate | Control input; requires no external pull-down in most applications due to low IGSS (±0.5 µA @ ±4.5 V) |
| 4 | Drain | Third drain terminal; contributes to 34 °C/W junction-to-foot thermal resistance and lowers package inductance |
| 5 | Source | Reference node for gate drive and current sensing; connects directly to system ground or load return path |
| 6 | Drain | Fourth drain terminal; completes symmetrical drain layout - enables uniform current distribution and thermal stress relief |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® Technology | Delivers 0.045 Ω RDS(on) at 10 V and 0.049 Ω at 4.5 V - enables efficient battery-switching in 3.3 V–5 V systems |
| Copper Leadframe SC-70 | Reduces RthJF to 34 °C/W (vs. 163 °C/W for Alloy 42) - supports >1 W power dissipation on standard FR4 without heatsink |
| Four-Drain Terminal Layout | Provides parallel current paths and distributed thermal interface - lowers localized PCB temperature rise by up to 40 °C |
| 100 % Rg Tested | Ensures gate resistance ≤ 4 kΩ - guarantees predictable turn-on timing and eliminates gate oscillation risk in high-speed switching |
| Halogen-Free & RoHS Compliant | Meets IEC 61249-2-21 and Directive 2002/95/EC - satisfies environmental requirements for global consumer electronics shipments |
Applications
| Smartphone Power Management | Wireless Headset Battery Protection |
|---|---|
Use Scenario: Isolating main battery from USB charging circuitry during fast-charge sequencing to prevent backfeed and thermal runaway. IC Role / Device Role: Low-side load switch controlling battery discharge path with reverse-current blocking via integrated body diode. Use Value: 0.049 Ω RDS(on) at 4.5 V drive limits voltage drop to <200 mV at 4 A, preserving system efficiency and extending runtime. | Use Scenario: Enabling/disabling Bluetooth audio amplifier supply to minimize quiescent current during standby mode. IC Role / Device Role: High-efficiency, logic-level-controlled power switch placed between LDO output and amplifier VCC. Use Value: 0.6–1.3 V VGS(th) ensures full enhancement with 1.8 V GPIO, eliminating need for external level shifters or bias networks. |
| USB-C Peripheral Load Switching | Small DC Motor Control in Wearables |
Use Scenario: Managing power delivery to USB-C accessory ports in docking stations, enforcing overcurrent shutdown per USB PD spec. IC Role / Device Role: Primary current-sense switch in conjunction with external current-sense resistor and comparator. Use Value: 4 nC Qg enables sub-microsecond response to fault signals, meeting USB PD 3.0 <10 µs overcurrent reaction time requirement. | Use Scenario: Driving small haptic feedback motors (e.g., linear resonant actuators) in smartwatches with precise PWM control. IC Role / Device Role: Low-RDS(on) N-channel driver in half-bridge configuration with external high-side switch. Use Value: Four-drain-pin thermal design sustains 3.7 A pulsed current (tp = 5 s) without derating - supports 100% duty-cycle vibration bursts. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel load switch applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si1427EDH-T1-GE3 | Same SC-70 package, but 20 V VDS, 0.028 Ω RDS(on) @ 4.5 V, 5.5 A ID - lower voltage rating, higher current capability | Better suited for single-cell Li-ion (≤4.2 V) systems requiring higher peak current, e.g., camera flash drivers | Select when VDS margin <10 V is acceptable and RDS(on) reduction below 0.03 Ω is critical for thermal budget |
| DMN2053UVT-7 | 20 V VDS, 0.022 Ω RDS(on) @ 4.5 V, SOT-563 package (smaller, 3-pin drain), 3.5 A ID - different footprint, lower thermal mass | Preferred for ultra-thin wearables where height <0.9 mm and board area <2.5 mm² are mandatory constraints | Choose only if PCB redesign is feasible and junction temperature rise must stay under 35 °C at 3 A continuous |
Compared with SI1428EDH-T1-GE3, Si1427EDH-T1-GE3 trades 10 V VDS headroom for lower on-resistance in identical packaging, while DMN2053UVT-7 sacrifices thermal robustness and drain current rating for minimal footprint - making SI1428EDH-T1-GE3 the balanced choice for 2-cell battery systems needing reliability, thermal margin, and logic-level compatibility.
Availability
SI1428EDH-T1-GE3 is available at Aetrix Electronics and suitable for portable device power management, battery protection circuits, and motor load switching requiring stable component supply across high-mix, low-volume production runs.
Supply support for SI1428EDH-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on efficiency, miniaturization, and reliability.
The SI14xxEDH family targets space-constrained portable electronics, delivering low-voltage logic-compatible switching with copper-leadframe thermal advantages - specifically engineered for battery-powered load management where size, efficiency, and robustness intersect.
FAQ
What is the maximum continuous drain current for SI1428EDH-T1-GE3 at 70 °C case temperature?
The maximum continuous drain current for SI1428EDH-T1-GE3 is 4 A at TC = 70 °C, as specified in the Absolute Maximum Ratings table. This value reflects package thermal limits under steady-state conditions and assumes proper PCB copper area for heat dissipation. Derating applies above 70 °C, and actual usable current depends on ambient temperature, board layout, and airflow - SI1428EDH-T1-GE3 maintains 3.7 A capability at TC = 70 °C per Vishay Document 67825.
Does SI1428EDH-T1-GE3 support 2.5 V logic-level gate drive?
Yes, SI1428EDH-T1-GE3 supports 2.5 V logic-level gate drive: its gate threshold voltage (VGS(th)) ranges from 0.6 V to 1.3 V, and RDS(on) is specified at 0.060 Ω with VGS = 2.5 V and ID = 1.5 A. This ensures full enhancement and low conduction loss in 2.5 V microcontroller applications - SI1428EDH-T1-GE3 is explicitly characterized for such operation in the datasheet's Static section.
What is the thermal resistance from junction to ambient for SI1428EDH-T1-GE3 on a standard PCB?
The typical junction-to-ambient thermal resistance (RthJA) for SI1428EDH-T1-GE3 is 60 °C/W on a 1" × 1" FR4 board with dual-side copper, per Vishay Application Note AN815. Maximum RthJA is 80 °C/W under the same conditions. This value enables ~1.01 W power dissipation at 25 °C ambient before reaching TJ(max) = 150 °C - SI1428EDH-T1-GE3 leverages its copper leadframe to achieve this performance in the SC-70 footprint.
Is SI1428EDH-T1-GE3 pin-compatible with other SC-70 MOSFETs like Si1427EDH-T1-GE3?
Yes, SI1428EDH-T1-GE3 is pin-compatible with Si1427EDH-T1-GE3: both use identical SC-70 (SOT-363) packages with matching pin 1 location, pad pattern, and 6-pin drain-gate-source layout. Mechanical dimensions, thermal pad alignment, and solder reflow profiles are interchangeable - SI1428EDH-T1-GE3 can be substituted on existing boards designed for Si1427EDH-T1-GE3 without layout changes, though electrical differences (VDS, RDS(on)) must be verified.
What does the "-GE3" suffix indicate in SI1428EDH-T1-GE3?
"-GE3" denotes Vishay's green, lead-free, and halogen-free packaging standard compliant with RoHS Directive 2002/95/EC and IEC 61249-2-21. It specifies matte tin plating over copper leadframe, no Pb or Br/Cl compounds, and tape-and-reel packaging per EIA-481-D. This suffix confirms SI1428EDH-T1-GE3 meets environmental requirements for consumer electronics - SI1428EDH-T1-GE3 is not a prototype or engineering sample, but a fully qualified production part.
SI1428EDH-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- 6-TSSOP, SC-88, SOT-363
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 2.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 45mOhm @ 3.7A, 10V
- Vgs(th) (Max) @ Id:
- 1.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 13.5 nC @ 10 V
- Vgs (Max):
- ±12V
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- -
- Power Dissipation (Max):
- 2.8W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SC-70-6
SI1428EDH-T1-GE3 FAQ
1.How can I place an order for SI1428EDH-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI1428EDH-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI1428EDH-T1-GE3 reliable?
The price and inventory of SI1428EDH-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI1428EDH-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SI1428EDH-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI1428EDH-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI1428EDH-T1-GE3?
SI1428EDH-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI1428EDH-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI1428EDH-T1-GE3?
For technical support, including SI1428EDH-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI1428EDH-T1-GE3 requirements.
6.How does Aetrix verify that SI1428EDH-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SI1428EDH-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI1428EDH-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SI1428EDH-T1-GE3?
All SI1428EDH-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI1428EDH-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI1428EDH-T1-GE3 part is unused and in its original packaging.
Return procedure for SI1428EDH-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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