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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI1441EDH-T1-BE3

Name: SI1441EDH-T1-BE3
Brand: Vishay Siliconix
SKU: SI1441EDH-T1-BE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI1441EDH-T1-BE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: 6-TSSOP, SC-88, SOT-363

Datasheet:: SI1441EDH-T1-BE3.pdf

Description:: MOSFET P-CH 20V 4A/4A SC70-6

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Product details

Overview

SI1441EDH-T1-BE3 from Vishay Siliconix is a P-channel 20 V (D-S) TrenchFET® power MOSFET in SC-70 (6-lead) package, rated for -4 A continuous drain current at T_J = 150 °C, with R_DS(on) = 0.041 Ω at V_GS = -4.5 V and Q_g = 12.5 nC - optimized for low-voltage load switching in portable consumer electronics.

For engineers reviewing the SI1441EDH-T1-BE3 datasheet, SI1441EDH-T1-BE3 pinout, SI1441EDH-T1-BE3 application, or SI1441EDH-T1-BE3 equivalent, this page delivers verified electrical parameters, thermal performance data, validated SC-70 6-pin terminal mapping, and real-world portable device use cases - all confirmed against Vishay document 66823 and AN815.

Technical Context

This MOSFET uses trench-gate silicon technology to achieve low on-resistance and fast switching with gate charge of 12.5 nC at V_GS = -4.5 V and V_DS = -10 V. Its -20 V V_DS rating and -1.0 V typical V_GS(th) support robust operation in 1.8–4.5 V logic-controlled systems.

The SC-70 (6-lead) package features four parallel drain terminals and a copper leadframe, delivering R_thJA = 80 °C/W (max) and R_thJF = 45 °C/W (max), enabling higher power density than Alloy 42 alternatives. Body diode recovery time is 18 ns (typ) at I_F = -4 A and di/dt = 100 A/μs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-20 V - supports rail-to-rail operation in 3.3 V and 5 V systems with margin against transients
R_DS(on) max @ V_GS = -4.5 V	0.041 Ω - enables <170 mW conduction loss at -4 A, critical for battery runtime
Q_g typ	12.5 nC - balances switching speed and gate drive strength for 1–10 MHz PWM control
I_D continuous	-4 A @ T_J = 150 °C - defines maximum steady-state load current without derating on standard FR4
T_J range	-55 to +150 °C - ensures reliability across industrial and extended-temperature portable environments
V_GS(th)	-0.4 to -1.0 V - guarantees turn-on with 1.8 V logic, compatible with modern low-voltage microcontrollers
R_thJA max	80 °C/W - sets thermal limit for 1.6 W dissipation at 25 °C ambient on minimal PCB area

Pinout & Package

SC-70 (6-lead) package with copper leadframe, 2.0 mm × 2.1 mm footprint, 0.95 mm height, and four integrated drain terminals for enhanced thermal and electrical performance.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 4, 6	Drain (D)	Four parallel high-current paths reduce effective R_DS(on) and improve heat spreading to PCB
3	Gate (G)	Control input requiring ≤860 Ω gate resistance; 150 ns turn-on delay at -4.5 V drive
5	Source (S)	Return path for load current; body diode anode; referenced to system ground in high-side switch config

Key Features

Feature	Design Value
TrenchFET® architecture	Delivers 0.034 Ω typical R_DS(on) at -4.5 V, reducing conduction loss by >30% vs planar P-channel MOSFETs
100% R_g tested	Ensures gate resistance between 80–860 Ω, guaranteeing consistent switching timing and EMI behavior
Copper leadframe SC-70	Lowers R_thJF to 45 °C/W (max), improving thermal headroom over Alloy 42 versions by 4×
ESD rating	1500 V HBM - protects against handling damage during SMT assembly and board-level integration
Body diode t_rr	18 ns typical - minimizes reverse recovery loss in synchronous buck or OR-ing applications

Applications

Cellular Phone Power Management	Digital Still Camera Load Switch
Use Scenario: High-side power switch controlling camera flash LED or image sensor supply rail. IC Role / Device Role / Timing Role: P-channel MOSFET configured as load switch, driven directly by baseband processor GPIO. Use Value: 0.041 Ω R_DS(on) limits voltage drop to <165 mV at 4 A, preserving battery voltage under peak flash current.	Use Scenario: Isolating main battery from DSC subsystems (LCD, lens motor, memory card) during sleep mode. IC Role / Device Role / Timing Role: Low-threshold (-0.4 V min) P-MOSFET enabling fast, logic-level-controlled power gating. Use Value: 12.5 nC Q_g allows full turn-on in <225 ns with 1 Ω gate resistor, minimizing wake-up latency.
Portable Game Console Backlight Control	GPS Module Power Sequencing
Use Scenario: PWM dimming driver for white LED backlight in handheld gaming displays. IC Role / Device Role / Timing Role: Synchronous rectifier in boost converter output stage, leveraging low R_DS(on) and fast body diode. Use Value: 18 ns body diode t_rr reduces switching loss and audible noise compared to discrete Schottky solutions.	Use Scenario: Controlled power-up sequencing of GPS RF front-end and baseband IC from shared Li-ion cell. IC Role / Device Role / Timing Role: Standby-mode load switch with <1 μA IDSS leakage, preventing battery drain during off-state. Use Value: -1 μA max IDSS at -20 V ensures <100 nA system standby current, extending GPS cold-start battery life.

Cellular Phone Power Management

Digital Still Camera Load Switch

Use Scenario: High-side power switch controlling camera flash LED or image sensor supply rail.

IC Role / Device Role / Timing Role: P-channel MOSFET configured as load switch, driven directly by baseband processor GPIO.

Use Value: 0.041 Ω R_DS(on) limits voltage drop to <165 mV at 4 A, preserving battery voltage under peak flash current.

Use Scenario: Isolating main battery from DSC subsystems (LCD, lens motor, memory card) during sleep mode.

IC Role / Device Role / Timing Role: Low-threshold (-0.4 V min) P-MOSFET enabling fast, logic-level-controlled power gating.

Use Value: 12.5 nC Q_g allows full turn-on in <225 ns with 1 Ω gate resistor, minimizing wake-up latency.

Portable Game Console Backlight Control

GPS Module Power Sequencing

Use Scenario: PWM dimming driver for white LED backlight in handheld gaming displays.

IC Role / Device Role / Timing Role: Synchronous rectifier in boost converter output stage, leveraging low R_DS(on) and fast body diode.

Use Value: 18 ns body diode t_rr reduces switching loss and audible noise compared to discrete Schottky solutions.

Use Scenario: Controlled power-up sequencing of GPS RF front-end and baseband IC from shared Li-ion cell.

IC Role / Device Role / Timing Role: Standby-mode load switch with <1 μA IDSS leakage, preventing battery drain during off-state.

Use Value: -1 μA max IDSS at -20 V ensures <100 nA system standby current, extending GPS cold-start battery life.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel load switch applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si1440EDH-T1-BE3	R_DS(on) = 0.052 Ω @ -4.5 V (12% higher); same SC-70 package and pinout	Suitable where marginally higher conduction loss is acceptable for cost-sensitive designs	Select when thermal budget allows 0.011 Ω higher R_DS(on) and no revision to layout is needed
DMG1012T-7	R_DS(on) = 0.055 Ω @ -4.5 V; SOT-563 (6-lead) package with different pin assignment (G/S/D/D/D/G)	Requires PCB redesign due to non-identical pinout and 0.1 mm larger footprint	Choose only if Si1441EDH-T1-BE3 is unavailable and layout modification is feasible

Compared with SI1441EDH-T1-BE3, Si1440EDH-T1-BE3 offers identical form factor but trades 12% higher R_DS(on) for lower cost, while DMG1012T-7 requires layout changes and delivers no thermal advantage despite similar R_DS(on).

Availability

SI1441EDH-T1-BE3 is available at Aetrix Electronics and suitable for cellular phone power management, digital still camera load switching, and portable game console backlight control requiring stable component supply across production lifecycles.

Supply support for SI1441EDH-T1-BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on efficiency, miniaturization, and reliability.

The SI1441EDH-T1-BE3 belongs to Vishay's LITTLE FOOT® SC-70 TrenchFET® family, designed specifically for space-constrained portable electronics requiring low-voltage logic compatibility and high power density.

FAQ

What is the maximum continuous drain current for SI1441EDH-T1-BE3 at 70 °C case temperature?

The SI1441EDH-T1-BE3 supports -4 A continuous drain current at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This rating remains unchanged from its 25 °C value due to thermal design margins built into the copper leadframe SC-70 package, which maintains junction temperature below 150 °C under these conditions.

Does SI1441EDH-T1-BE3 support 1.8 V logic-level gate drive?

Yes, SI1441EDH-T1-BE3 has a gate-source threshold voltage (V_GS(th)) ranging from -0.4 V to -1.0 V, ensuring reliable turn-on with 1.8 V logic signals. At V_GS = -1.8 V, R_DS(on) is guaranteed ≤0.100 Ω, making SI1441EDH-T1-BE3 suitable for direct interface with low-voltage microcontrollers and PMICs.

What is the thermal resistance from junction to ambient for SI1441EDH-T1-BE3 on a standard test board?

The maximum junction-to-ambient thermal resistance (R_thJA) for SI1441EDH-T1-BE3 is 80 °C/W under standard test conditions (t ≤ 5 s, 1" × 1" FR4 board). This value reflects worst-case transient performance; steady-state R_thJA is typically 103 °C/W on a 1-inch² dual-copper PCB, per Vishay AN815.

Is SI1441EDH-T1-BE3 pin-compatible with other SC-70 6-lead P-channel MOSFETs?

SI1441EDH-T1-BE3 follows the standard SC-70 (6-lead) pinout: pins 1/2/4/6 = Drain, pin 3 = Gate, pin 5 = Source. It is pin-compatible with Si1440EDH-T1-BE3 and other Vishay "EDH" series devices, but not with SOT-563 or SOT-363 variants that use different terminal assignments.

What is the body diode forward voltage of SI1441EDH-T1-BE3 at -4 A source current?

The body diode forward voltage (V_SD) of SI1441EDH-T1-BE3 is -0.85 V (typ) to -1.2 V (max) at I_S = -4 A and V_GS = 0 V. This low V_SD reduces conduction loss in reverse-biased configurations such as OR-ing circuits or flyback paths in DC-DC converters using SI1441EDH-T1-BE3.

SI1441EDH-T1-BE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: 6-TSSOP, SC-88, SOT-363

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 4A (Ta), 4A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: 41mOhm @ 5A, 4.5V

Vgs(th) (Max) @ Id:: 1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 33 nC @ 8 V

Vgs (Max):: ±10V

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: 1.6W (Ta), 2.8W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SC-70-6

SI1441EDH-T1-BE3 FAQ

1.How can I place an order for SI1441EDH-T1-BE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI1441EDH-T1-BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI1441EDH-T1-BE3 reliable?

The price and inventory of SI1441EDH-T1-BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI1441EDH-T1-BE3 is usually 5 days.

3.What payment methods are accepted for SI1441EDH-T1-BE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI1441EDH-T1-BE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI1441EDH-T1-BE3?

SI1441EDH-T1-BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI1441EDH-T1-BE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI1441EDH-T1-BE3?

For technical support, including SI1441EDH-T1-BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI1441EDH-T1-BE3 requirements.

6.How does Aetrix verify that SI1441EDH-T1-BE3 is sourced from the original manufacturer or authorized distributors?

All SI1441EDH-T1-BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI1441EDH-T1-BE3 meets industry standards.

7.What is the process for return or replacement of SI1441EDH-T1-BE3?

All SI1441EDH-T1-BE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI1441EDH-T1-BE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI1441EDH-T1-BE3 part is unused and in its original packaging.

Return procedure for SI1441EDH-T1-BE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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