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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI1441EDH-T1-GE3

Name: SI1441EDH-T1-GE3
Brand: Vishay Siliconix
SKU: SI1441EDH-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI1441EDH-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: 6-TSSOP, SC-88, SOT-363

Datasheet:: SI1441EDH-T1-GE3.pdf

Description:: MOSFET P-CH 20V 4A SOT-363

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Product details

Overview

SI1441EDH-T1-GE3 from Vishay Siliconix is a P-channel 20 V TrenchFET® MOSFET in SC-70 (6-lead) package, rated for -4 A continuous drain current at T_J = 150 °C, with R_DS(on) = 0.041 Ω at V_GS = -4.5 V and Q_g = 12.5 nC - optimized for low-voltage load switching in portable electronics.

For engineers reviewing the SI1441EDH-T1-GE3 datasheet, SI1441EDH-T1-GE3 pinout, SI1441EDH-T1-GE3 application, or SI1441EDH-T1-GE3 equivalent, key selection criteria include its -20 V V_DS, ultra-low gate charge for fast switching, 1500 V HBM ESD rating, and copper leadframe thermal performance enabling 1 W dissipation on standard FR4.

Technical Context

This device uses trench-gate MOSFET architecture to achieve low R_DS(on) at low gate drive voltages (-1.8 V to -4.5 V), supporting direct logic-level control from 1.8 V/2.5 V/3.3 V microcontrollers. Its four-drain-pin configuration in SC-70 enhances thermal conduction and reduces effective R_DS(on) under real PCB conditions.

The integrated body diode exhibits t_rr = 18 ns and Q_rr = 8 nC, enabling efficient synchronous rectification or reverse-polarity protection without external diodes. Gate resistance is specified at 80–860 Ω (1 MHz), supporting controlled turn-on/turn-off timing in high-frequency load-switching circuits.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-20 V - supports rail-to-rail operation down to -20 V input, suitable for USB OTG, battery backup, and reverse-voltage protection.
R_DS(on) max @ V_GS = -4.5 V	0.041 Ω - enables <170 mW conduction loss at -4 A, critical for thermally constrained portable designs.
Q_g typ.	12.5 nC - allows fast switching with low gate-drive power, reducing transition losses in PWM-controlled loads.
I_D continuous	-4 A @ T_J = 150 °C - defines maximum steady-state current capability with derating above 25 °C ambient.
R_thJA max	80 °C/W - measured on 1" × 1" FR4 board; enables thermal design margin for 1.6 W max power at 25 °C ambient.
V_GS(th)	-0.4 to -1.0 V - ensures reliable turn-on with 1.8 V logic outputs and stable threshold across temperature.
ESD rating	1500 V HBM - meets IEC 61000-4-2 Level 2 for robustness in handheld device assembly and field use.

Pinout & Package

SC-70 (6-lead) package with copper leadframe - provides 4× drain terminals (Pins 1, 2, 4, 6), gate (Pin 3), and source (Pin 5); footprint matches JEDEC MO-203AA, offering 40% lower R_thJF vs. Alloy 42 equivalents.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 4, 6	Drain (D)	Four parallel drain connections reduce effective R_DS(on) and improve heat spreading into PCB copper.
3	Gate (G)	Control terminal requiring ≤ ±10 V drive; 100% R_g tested for consistent switching behavior.
5	Source (S)	Reference node for gate drive; tied to system ground or negative rail in high-side switch configurations.

Key Features

Feature	Design Value
TrenchFET® architecture	Delivers 0.041 Ω R_DS(on) at -4.5 V gate drive, enabling direct interface with low-voltage MCUs without level shifters.
Copper leadframe	Reduces R_thJF to 34 °C/W typical - improves thermal reliability and allows higher sustained current in compact layouts.
Four-drain-pin layout	Provides dual thermal paths and lowers parasitic inductance, enhancing EMI performance in fast-switching load applications.
100% R_g tested	Ensures gate resistance between 80–860 Ω, guaranteeing predictable rise/fall times and minimizing gate oscillation risk.
Body diode t_rr = 18 ns	Enables clean commutation in reverse-battery protection and OR-ing circuits without external Schottky diodes.

Applications

Cellular Phone Power Management	DSC Battery Protection
Use Scenario: Isolating main battery from USB charging circuitry during hot-plug events to prevent backfeed and ensure safe charging sequencing. IC Role / Device Role: High-side load switch controlling VBUS path with reverse-current blocking and overcurrent limiting via external sense resistor. Use Value: -20 V rating and -0.4 V V_GS(th) allow immediate turn-on from 1.8 V PMIC enable signals, while 1500 V ESD withstand protects against handling damage.	Use Scenario: Enabling/disabling power to image sensor and flash LED modules based on camera mode to minimize standby leakage. IC Role / Device Role: Low-R_DS(on) P-channel switch placed between Li-ion battery and subsystem rails, driven by GPIO. Use Value: 0.041 Ω R_DS(on) limits voltage drop to <165 mV at 4 A, preserving battery runtime and maintaining stable 3.3 V supply under load.
Portable Game Console Load Switch	MP3 Player Reverse Polarity Protection
Use Scenario: Sequencing power to RF transceiver and audio codec during boot-up to avoid inrush current conflicts and rail collapse. IC Role / Device Role: Controlled power gate with soft-start behavior achieved via RC gate network leveraging low Q_g (12.5 nC). Use Value: Fast 90 ns rise time (at V_GEN = -10 V) enables precise timing control, while 4-pin drain layout minimizes thermal stress during burst-mode operation.	Use Scenario: Preventing damage when user inserts alkaline batteries backward into dual-cell compartment of MP3 player. IC Role / Device Role: Reverse-voltage protector using P-channel MOSFET in common-source configuration with gate tied to input. Use Value: -20 V V_DS withstands full reverse battery stack (-3 V), and body diode forward voltage of -0.85 V ensures minimal dropout during normal operation.

Cellular Phone Power Management

DSC Battery Protection

Use Scenario: Isolating main battery from USB charging circuitry during hot-plug events to prevent backfeed and ensure safe charging sequencing.

IC Role / Device Role: High-side load switch controlling VBUS path with reverse-current blocking and overcurrent limiting via external sense resistor.

Use Value: -20 V rating and -0.4 V V_GS(th) allow immediate turn-on from 1.8 V PMIC enable signals, while 1500 V ESD withstand protects against handling damage.

Use Scenario: Enabling/disabling power to image sensor and flash LED modules based on camera mode to minimize standby leakage.

IC Role / Device Role: Low-R_DS(on) P-channel switch placed between Li-ion battery and subsystem rails, driven by GPIO.

Use Value: 0.041 Ω R_DS(on) limits voltage drop to <165 mV at 4 A, preserving battery runtime and maintaining stable 3.3 V supply under load.

Portable Game Console Load Switch

MP3 Player Reverse Polarity Protection

Use Scenario: Sequencing power to RF transceiver and audio codec during boot-up to avoid inrush current conflicts and rail collapse.

IC Role / Device Role: Controlled power gate with soft-start behavior achieved via RC gate network leveraging low Q_g (12.5 nC).

Use Value: Fast 90 ns rise time (at V_GEN = -10 V) enables precise timing control, while 4-pin drain layout minimizes thermal stress during burst-mode operation.

Use Scenario: Preventing damage when user inserts alkaline batteries backward into dual-cell compartment of MP3 player.

IC Role / Device Role: Reverse-voltage protector using P-channel MOSFET in common-source configuration with gate tied to input.

Use Value: -20 V V_DS withstands full reverse battery stack (-3 V), and body diode forward voltage of -0.85 V ensures minimal dropout during normal operation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel load switch applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si1443DH-T1-GE3	R_DS(on) = 0.025 Ω @ -4.5 V, but rated only to -12 V V_DS; same SC-70 package and pinout.	Better efficiency below -12 V systems; unsuitable for -20 V reverse-battery or industrial 18 V rails.	Select when V_IN ≤ -12 V and lowest possible conduction loss is required.
DMN2011LFG-7	N-channel enhancement MOSFET (20 V, 0.022 Ω @ -4.5 V), requires high-side gate driver or charge pump.	Higher efficiency than P-channel at same voltage, but adds complexity and BOM cost for gate bias generation.	Choose for high-volume designs where gate-driver overhead is acceptable and R_DS(on) reduction justifies added components.

Compared with SI1441EDH-T1-GE3, Si1443DH-T1-GE3 offers lower R_DS(on) but reduced voltage margin, while DMN2011LFG-7 delivers superior on-resistance only when paired with active gate control - making SI1441EDH-T1-GE3 the optimal balance of simplicity, voltage headroom, and thermal performance in space-constrained portable systems.

Availability

SI1441EDH-T1-GE3 is available at Aetrix Electronics and suitable for cellular phone power management, DSC battery protection, portable game console load switching, MP3 player reverse polarity protection, and GPS module isolation requiring stable component supply and long-term lifecycle support.

Supply support for SI1441EDH-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, optoelectronics, and passive components with emphasis on power efficiency and reliability.

The SI1441EDH-T1-GE3 belongs to Vishay's LITTLE FOOT® SC-70 family - engineered specifically for miniaturized, battery-powered devices where low R_DS(on), low gate charge, and copper-leadframe thermal performance are essential.

FAQ

What is the maximum continuous drain current rating for SI1441EDH-T1-GE3 at 70 °C case temperature?

The SI1441EDH-T1-GE3 is rated for -4 A continuous drain current at both T_C = 25 °C and T_C = 70 °C, per Absolute Maximum Ratings table. This reflects its robust copper leadframe thermal design, which maintains current capability across a wide case temperature range without derating up to 70 °C.

Does SI1441EDH-T1-GE3 support 1.8 V logic-level gate drive?

Yes, SI1441EDH-T1-GE3 has a gate-threshold voltage range of -0.4 V to -1.0 V and delivers R_DS(on) = 0.100 Ω at V_GS = -1.8 V, enabling reliable turn-on with 1.8 V microcontroller GPIOs. Its trench-gate structure ensures strong channel formation even at low gate overdrive.

What is the thermal resistance from junction to foot (R_thJF) for SI1441EDH-T1-GE3?

The SI1441EDH-T1-GE3 has a typical junction-to-foot thermal resistance (R_thJF) of 34 °C/W and a maximum of 45 °C/W, measured at the drain leads. This value confirms its copper leadframe advantage over Alloy 42 alternatives and supports accurate thermal modeling of PCB heat transfer paths.

Can SI1441EDH-T1-GE3 be used in reverse-battery protection circuits?

Yes, SI1441EDH-T1-GE3 is well-suited for reverse-battery protection due to its -20 V V_DS rating, which safely blocks -3 V to -4.5 V reversed alkaline or NiMH stacks, and its low V_SD = -0.85 V body diode forward voltage, minimizing dropout during normal operation.

Is SI1441EDH-T1-GE3 halogen-free and RoHS-compliant?

Yes, SI1441EDH-T1-GE3 is lead (Pb)-free and halogen-free, as confirmed by its ordering suffix "-GE3" and compliance documentation referenced in Vishay's material categorization notice (www.vishay.com/doc?99912). It meets EU RoHS Directive 2011/65/EU requirements.

SI1441EDH-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: 6-TSSOP, SC-88, SOT-363

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 4A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 1.8V, 4.5V

Rds On (Max) @ Id, Vgs:: 41mOhm @ 5A, 4.5V

Vgs(th) (Max) @ Id:: 1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 33 nC @ 8 V

Vgs (Max):: ±10V

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: 2.8W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SC-70-6

SI1441EDH-T1-GE3 FAQ

1.How can I place an order for SI1441EDH-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI1441EDH-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI1441EDH-T1-GE3 reliable?

The price and inventory of SI1441EDH-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI1441EDH-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SI1441EDH-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI1441EDH-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI1441EDH-T1-GE3?

SI1441EDH-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI1441EDH-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI1441EDH-T1-GE3?

For technical support, including SI1441EDH-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI1441EDH-T1-GE3 requirements.

6.How does Aetrix verify that SI1441EDH-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SI1441EDH-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI1441EDH-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SI1441EDH-T1-GE3?

All SI1441EDH-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI1441EDH-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI1441EDH-T1-GE3 part is unused and in its original packaging.

Return procedure for SI1441EDH-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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