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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI1442DH-T1-BE3

Name: SI1442DH-T1-BE3
Brand: Vishay Siliconix
SKU: SI1442DH-T1-BE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI1442DH-T1-BE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: 6-TSSOP, SC-88, SOT-363

Datasheet:: SI1442DH-T1-BE3.pdf

Description:: MOSFET N-CH 12V 4A SC70-6

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Product details

Overview

SI1442DH-T1-BE3 from Vishay Siliconix is an N-channel 12 V TrenchFET® power MOSFET in SC-70 (6-lead) package, rated for 4 A continuous drain current at T_J = 150 °C, with R_DS(on) = 0.020 Ω at V_GS = 4.5 V and Q_g = 13.1 nC - optimized for low-voltage load switching in portable battery-powered systems.

For engineers reviewing the SI1442DH-T1-BE3 datasheet, SI1442DH-T1-BE3 pinout, SI1442DH-T1-BE3 application, or SI1442DH-T1-BE3 equivalent, key selection criteria include its 12 V V_DS rating, ultra-low on-resistance at 1.8–4.5 V gate drive, 6-pin SC-70 copper leadframe thermal performance, and suitability for space-constrained DC/DC converter high-side or load-switch roles.

Technical Context

This device uses trench-gate MOSFET architecture to achieve low R_DS(on) and fast switching with Q_g = 13.1 nC at V_GS = 4.5 V. Its gate threshold voltage (V_GS(th)) ranges from 0.4 V to 1.0 V, enabling reliable turn-on with logic-level drivers down to 1.8 V.

The SC-70 (6-lead) package features four parallel drain terminals and a copper leadframe, delivering R_thJA = 60–80 °C/W (typ./max.) and R_thJF = 34–45 °C/W - significantly lower than Alloy 42 alternatives - supporting higher power density in compact layouts.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	12 V - supports operation in 3.3 V, 5 V, and 12 V rail systems without overvoltage risk
R_DS(on) @ 4.5 V	0.020 Ω max - enables <100 mV drop at 5 A, minimizing conduction loss in battery switches
R_DS(on) @ 1.8 V	0.030 Ω max - ensures functional switching with low-power microcontroller GPIOs
Q_g	13.1 nC typ. - balances fast turn-on (t_d(on) = 8 ns) with low driver power demand
I_D continuous	4 A @ T_J = 150 °C - defines maximum steady-state load current under thermal limit
P_D @ T_A = 25 °C	1.56 W - sets practical power handling on standard FR4 without heatsink
V_GS(th)	0.4–1.0 V - guarantees turn-on with 1.8 V logic while avoiding false triggering near 0 V

Pinout & Package

SI1442DH-T1-BE3 is housed in a surface-mount SC-70 (6-lead) package with copper leadframe, measuring 2.0 mm × 2.1 mm × 0.95 mm (L × W × H), featuring four drain terminals for enhanced thermal and current-carrying capability.

Pin/Terminal	Circuit Role	Design Meaning
1	Drain	One of four parallel drain connections; reduces effective R_DS(on) and improves thermal path to PCB
2	Drain	Second drain terminal; shares current and heat with pins 1, 4, and 6
3	Gate	Control input; low C_iss = 1010 pF and R_g = 0.3–3.2 Ω enable clean 4.5 V switching
4	Drain	Third drain terminal; contributes to 34–45 °C/W junction-to-foot thermal resistance
5	Source	Power return path; referenced for gate drive and body diode conduction
6	Drain	Fourth drain terminal; maximizes copper area on PCB for thermal dissipation

Key Features

Feature	Design Value
TrenchFET® architecture	Delivers 0.020 Ω R_DS(on) at 4.5 V in 2.0 mm × 2.1 mm footprint - critical for miniaturized load switches
100 % R_g tested	Ensures gate resistance between 0.3–3.2 Ω across production lot - guarantees consistent switching timing
Copper leadframe SC-70	Reduces R_thJA by ~36% vs. Alloy 42; enables 1.01 W power dissipation at 25 °C ambient
Low V_GS(th) range	0.4–1.0 V threshold supports direct drive from 1.8 V microcontrollers without level-shifting
Body diode t_rr	19–30 ns reverse recovery time - suitable for synchronous rectification in low-voltage DC/DC converters

Applications

Smartphone Battery Protection	USB-C Power Delivery Switch
Use Scenario: Isolating main battery from system during charging or fault conditions in slim smartphones. IC Role / Device Role: High-side load switch controlling battery connection path with minimal voltage drop. Use Value: 0.020 Ω R_DS(on) limits dropout to ≤100 mV at 5 A, preserving runtime and thermal margin in tight enclosures.	Use Scenario: Enabling/disabling 5 V/9 V/15 V/20 V power paths in USB-C PD sink designs. IC Role / Device Role: Low-side or high-side power path MOSFET in programmable power supply interface. Use Value: 12 V V_DS rating and 4.5 V gate compatibility ensure safe operation across full USB-C PD voltage range.
Wearable Device Load Switch	PMIC Output Stage
Use Scenario: Power gating sensors, radios, or displays in hearables and smartwatches. IC Role / Device Role: Logic-controlled power switch placed between PMIC output and subsystem rail. Use Value: 0.4–1.0 V V_GS(th) allows direct control from 1.8 V MCU GPIO, eliminating external level shifters.	Use Scenario: Final output stage of integrated power management IC supplying core voltage to SoC. IC Role / Device Role: Discrete N-channel switch augmenting internal PMIC drive capability for higher current loads. Use Value: Four-drain SC-70 layout provides low-inductance, low-R_DS(on) path compatible with PMIC gate drivers.

Smartphone Battery Protection

USB-C Power Delivery Switch

Use Scenario: Isolating main battery from system during charging or fault conditions in slim smartphones.

IC Role / Device Role: High-side load switch controlling battery connection path with minimal voltage drop.

Use Value: 0.020 Ω R_DS(on) limits dropout to ≤100 mV at 5 A, preserving runtime and thermal margin in tight enclosures.

Use Scenario: Enabling/disabling 5 V/9 V/15 V/20 V power paths in USB-C PD sink designs.

IC Role / Device Role: Low-side or high-side power path MOSFET in programmable power supply interface.

Use Value: 12 V V_DS rating and 4.5 V gate compatibility ensure safe operation across full USB-C PD voltage range.

Wearable Device Load Switch

PMIC Output Stage

Use Scenario: Power gating sensors, radios, or displays in hearables and smartwatches.

IC Role / Device Role: Logic-controlled power switch placed between PMIC output and subsystem rail.

Use Value: 0.4–1.0 V V_GS(th) allows direct control from 1.8 V MCU GPIO, eliminating external level shifters.

Use Scenario: Final output stage of integrated power management IC supplying core voltage to SoC.

IC Role / Device Role: Discrete N-channel switch augmenting internal PMIC drive capability for higher current loads.

Use Value: Four-drain SC-70 layout provides low-inductance, low-R_DS(on) path compatible with PMIC gate drivers.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel load switch applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si1440DH-T1-BE3	R_DS(on) = 0.028 Ω @ 4.5 V (vs. 0.020 Ω); otherwise identical SC-70 package and pinout	Slightly higher conduction loss - acceptable where 50 mW extra dissipation is tolerable	Choose when tighter R_DS(on) tolerance is not required and cost optimization is prioritized
DMN10H7TFA	10 V V_DS, R_DS(on) = 0.019 Ω @ 4.5 V, same SC-70-6 package but different pin assignment (G/S/D layout)	Not pin-compatible; requires PCB redesign due to altered gate/source/drain terminal mapping	Select only if board layout can be modified and 10 V rating suffices for target rail

Compared with SI1442DH-T1-BE3, Si1440DH-T1-BE3 offers relaxed on-resistance at lower cost but same footprint and drive requirements, while DMN10H7TFA delivers marginally lower R_DS(on) yet demands layout revision due to non-identical pinout - making SI1442DH-T1-BE3 optimal for new designs prioritizing thermal efficiency and drop-in compatibility.

Availability

SI1442DH-T1-BE3 is available at Aetrix Electronics and suitable for portable electronics battery protection, USB-C power path control, and wearable device load switching requiring stable component supply across high-mix, low-volume production runs.

Supply support for SI1442DH-T1-BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, optoelectronics, and passive components with emphasis on reliability and power efficiency.

The SI1442DH-T1-BE3 belongs to Vishay's "LITTLE FOOT" SC-70 TrenchFET® family, engineered specifically for space-constrained, low-voltage load switching in battery-powered consumer and portable electronics.

FAQ

What is the maximum continuous drain current rating for SI1442DH-T1-BE3?

The SI1442DH-T1-BE3 is rated for 4 A continuous drain current at T_J = 150 °C under specified thermal conditions (e.g., mounted on 1" × 1" FR4 board). This rating holds across ambient temperatures up to 70 °C, with derating applied above that point per the datasheet's current derating curve. The SI1442DH-T1-BE3 achieves this with its copper leadframe SC-70 package and low R_DS(on).

Does SI1442DH-T1-BE3 support 1.8 V gate drive?

Yes, SI1442DH-T1-BE3 supports reliable turn-on with 1.8 V gate drive: its V_GS(th) is specified from 0.4 V to 1.0 V, and R_DS(on) is guaranteed at 0.030 Ω max at V_GS = 1.8 V and I_D = 3 A. This makes SI1442DH-T1-BE3 suitable for direct interface with 1.8 V microcontrollers without external level shifting.

What is the thermal resistance from junction to ambient for SI1442DH-T1-BE3?

The SI1442DH-T1-BE3 has a typical junction-to-ambient thermal resistance (R_thJA) of 60 °C/W and a maximum of 80 °C/W when surface-mounted on a 1" × 1" FR4 board. These values reflect its copper leadframe SC-70 construction - approximately 36% lower than equivalent Alloy 42 packages - enabling higher power handling in compact layouts.

Is SI1442DH-T1-BE3 pin-compatible with other SC-70-6 MOSFETs like Si1440DH-T1-BE3?

Yes, SI1442DH-T1-BE3 is pin-compatible with Si1440DH-T1-BE3: both share identical SC-70 (6-lead) package dimensions, pin numbering, and terminal assignments (pins 1/2/4/6 = Drain, 3 = Gate, 5 = Source). This allows direct substitution in existing layouts where the slightly higher R_DS(on) of Si1440DH-T1-BE3 is acceptable.

What is the total gate charge (Q_g) specification for SI1442DH-T1-BE3?

The SI1442DH-T1-BE3 has a typical total gate charge (Q_g) of 13.1 nC at V_GS = 4.5 V and V_DS = 6 V, with a maximum of 20 nC. This value directly impacts switching speed and driver power requirements - for example, driving SI1442DH-T1-BE3 at 1 MHz with 4.5 V gate swing requires ~65.5 μW of average gate drive power.

SI1442DH-T1-BE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: 6-TSSOP, SC-88, SOT-363

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 12 V

Current - Continuous Drain (Id) @ 25°C:: 4A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: 20mOhm @ 6A, 4.5V

Vgs(th) (Max) @ Id:: 1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 33 nC @ 8 V

Vgs (Max):: ±8V

Input Capacitance (Ciss) (Max) @ Vds:: 1010 pF @ 6 V

FET Feature:: -

Power Dissipation (Max):: 1.56W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SC-70-6

SI1442DH-T1-BE3 FAQ

1.How can I place an order for SI1442DH-T1-BE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI1442DH-T1-BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI1442DH-T1-BE3 reliable?

The price and inventory of SI1442DH-T1-BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI1442DH-T1-BE3 is usually 5 days.

3.What payment methods are accepted for SI1442DH-T1-BE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI1442DH-T1-BE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI1442DH-T1-BE3?

SI1442DH-T1-BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI1442DH-T1-BE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI1442DH-T1-BE3?

For technical support, including SI1442DH-T1-BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI1442DH-T1-BE3 requirements.

6.How does Aetrix verify that SI1442DH-T1-BE3 is sourced from the original manufacturer or authorized distributors?

All SI1442DH-T1-BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI1442DH-T1-BE3 meets industry standards.

7.What is the process for return or replacement of SI1442DH-T1-BE3?

All SI1442DH-T1-BE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI1442DH-T1-BE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI1442DH-T1-BE3 part is unused and in its original packaging.

Return procedure for SI1442DH-T1-BE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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