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Vishay Siliconix SI1443EDH-T1-BE3
- Part No.:
- SI1443EDH-T1-BE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- 6-TSSOP, SC-88, SOT-363
- Datasheet:
-
SI1443EDH-T1-BE3.pdf
- Description:
- MOSFET P-CH 30V 4A/4A SC70-6
- Quantity:
- Payment:
- Shipping:
Inventory:6,220
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Product details
Overview
SI1443EDH-T1-BE3 from Vishay Siliconix is a P-channel 30 V (D-S) trench MOSFET in SC-70 (6-lead) package, rated for -4 A continuous drain current at TJ = 150 °C, with RDS(on) = 0.054 Ω at VGS = -10 V and 0.062 Ω at VGS = -4.5 V, optimized for low-voltage load switching in portable electronics.
For engineers reviewing the SI1443EDH-T1-BE3 datasheet, SI1443EDH-T1-BE3 pinout, SI1443EDH-T1-BE3 application, or SI1443EDH-T1-BE3 equivalent, this device serves as a compact, high-reliability P-channel switch for battery-powered systems requiring soft turn-on, low gate charge (8.6 nC typ.), and robust ESD tolerance (1500 V HBM).
Technical Context
This MOSFET employs Vishay's TrenchFET® process to achieve low on-resistance and fast switching with minimal gate drive requirements. Its gate threshold voltage (VGS(th)) ranges from -0.6 V to -1.5 V, enabling reliable enhancement-mode operation with logic-level gate control down to -2.5 V.
The device integrates four parallel drain terminals in its SC-70 (6-lead) package to reduce both RDS(on) and thermal resistance - junction-to-foot (RthJF) is 34 °C/W typical, and junction-to-ambient (RthJA) is 60 °C/W (t ≤ 5 s), supporting stable operation in space-constrained PCB layouts.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -30 V - Maximum drain-source blocking voltage; supports 3.3 V–5 V rail switching with margin against transients. |
| RDS(on) @ VGS = -10 V | 0.054 Ω max - Enables <100 mW conduction loss at -4 A, critical for thermally constrained portable designs. |
| RDS(on) @ VGS = -4.5 V | 0.062 Ω max - Ensures full enhancement under standard I/O voltage levels from microcontrollers or PMICs. |
| Qg typ. | 8.6 nC - Low gate charge reduces driver power and enables fast turn-on/turn-off (td(on) = 40 ns @ -10 V). |
| ID continuous | -4 A @ TC = 25 °C - Sustained load current capability suitable for USB-powered peripherals and display backlight drivers. |
| VGS(th) | -0.6 to -1.5 V - Tight threshold range ensures predictable turn-on across temperature and process variation. |
| ESD HBM | 1500 V - Meets IEC 61000-4-2 Level 2 for system-level ESD robustness without external protection. |
Pinout & Package
SI1443EDH-T1-BE3 is housed in a surface-mount SC-70 (6-lead) package with copper leadframe, measuring 2.0 × 2.1 × 0.9 mm (L × W × H), featuring four drain leads for enhanced thermal and electrical performance.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 4, 6 | Drain (D) | Four parallel drain terminals reduce effective RDS(on) and improve heat spreading to PCB copper. |
| 3 | Gate (G) | Control input; requires no external gate resistor for basic switching due to 100% Rg testing and low Qg. |
| 5 | Source (S) | Common return path; tied to system ground or battery negative in high-side load switch configurations. |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® construction | Delivers industry-leading RDS(on) × area efficiency for SC-70 footprint, reducing board space vs. SOT-23 alternatives. |
| Four-drain SC-70 package | Lowers thermal resistance by ~60% vs. Alloy 42 leadframe versions, enabling 1.01 W dissipation at 25 °C ambient. |
| 100% Rg tested | Guarantees gate resistance between 90 Ω and 900 Ω, ensuring consistent switching timing and driver compatibility. |
| Soft turn-on capability | Controlled dV/dt via gate threshold and Qg profile minimizes inrush current in hot-swap and battery-load applications. |
| 1500 V HBM ESD rating | Eliminates need for discrete ESD protection in handheld device front-end switches, simplifying BOM and layout. |
Applications
| Cellular Phone Power Management | DSC Battery Load Switch |
|---|---|
Use Scenario: Enabling/disabling camera module power during sleep/wake cycles to minimize standby current. IC Role / Device Role / Timing Role: High-side P-channel load switch controlling 3.3 V camera rail with controlled turn-on slew rate. Use Value: Reduces quiescent current to <1 μA in off-state and limits inrush to <500 mA, preserving battery life and preventing brownout. |
Use Scenario: Isolating flash LED driver circuitry from main battery when not in use. IC Role / Device Role / Timing Role: Logic-controlled P-MOSFET acting as a low-loss, fast-response power gate. Use Value: Achieves <100 ns turn-off delay and <0.062 Ω on-resistance, cutting flash circuit leakage by >99% versus mechanical switch solutions. |
| Portable Game Console Display Backlight | GPS Module Voltage Rail Control |
Use Scenario: PWM-dimming compatible backlight power switch for OLED/LCD displays. IC Role / Device Role / Timing Role: High-frequency switching element in constant-current backlight path with gate driven by MCU PWM. Use Value: 8.6 nC Qg and 450 Ω max Rg support clean 10 kHz PWM edges, eliminating visible flicker and audible noise. |
Use Scenario: Sequencing GPS RF section power after baseband initialization in multi-rail embedded systems. IC Role / Device Role / Timing Role: Controlled enable switch for 2.8 V GPS LNA supply, synchronized with host processor GPIO. Use Value: -1.5 V max VGS(th) ensures reliable turn-on with 3.3 V GPIO, while -30 V VDS withstands automotive-grade load dump transients. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel load switch applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si1441EDH-T1-BE3 | RDS(on) = 0.075 Ω @ -4.5 V (higher than SI1443EDH-T1-BE3's 0.062 Ω); same SC-70 package and pinout. | Suitable where slightly higher conduction loss is acceptable for cost-sensitive consumer designs. | Select Si1441EDH-T1-BE3 only if thermal budget allows ≥15% higher I²R loss at -4 A. |
| DMN2041LFG-7 | P-channel, -20 V VDS, RDS(on) = 0.072 Ω @ -4.5 V, X2-DFN1010-6 package (1.0 × 1.0 mm), different pinout. | Better suited for ultra-compact wearables where footprint is prioritized over voltage margin. | Choose DMN2041LFG-7 only when board area is constrained to <1.0 mm² and 20 V blocking suffices. |
Compared with SI1443EDH-T1-BE3, Si1441EDH-T1-BE3 trades 18% higher RDS(on) for lower unit cost, while DMN2041LFG-7 sacrifices 33% lower voltage rating and non-pin-compatible layout for 50% smaller footprint - neither is drop-in; both require layout and thermal revalidation.
Availability
SI1443EDH-T1-BE3 is available at Aetrix Electronics and suitable for portable electronics, battery management systems, and USB-C peripheral power control requiring stable component supply, RoHS-compliant packaging, and long-term industrial availability.
Supply support for SI1443EDH-T1-BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors and passive components, specializing in high-efficiency power management solutions with emphasis on miniaturization, thermal performance, and reliability.
The SI1443EDH-T1-BE3 belongs to Vishay's LITTLE FOOT® SC-70 trench MOSFET family, engineered specifically for space-constrained portable devices demanding low RDS(on), fast switching, and robust ESD immunity in sub-2 mm² footprints.
FAQ
What is the maximum continuous drain current rating for SI1443EDH-T1-BE3 at 70 °C case temperature?
The SI1443EDH-T1-BE3 supports -4 A continuous drain current at TC = 70 °C, as specified in the Absolute Maximum Ratings table. This rating assumes proper PCB copper area and thermal vias per Vishay's recommended pad pattern for the SC-70 (6-lead) package. Derating applies above 70 °C case temperature per the current derating curve on page 5 of the datasheet.
Does SI1443EDH-T1-BE3 support logic-level gate drive from a 3.3 V microcontroller?
Yes, SI1443EDH-T1-BE3 is fully compatible with 3.3 V logic-level gate drive: its VGS(th) range (-0.6 V to -1.5 V) ensures strong enhancement at VGS = -3.3 V, and RDS(on) is guaranteed at -4.5 V (0.062 Ω max). The device delivers -4 A continuous current under these conditions with minimal conduction loss.
What is the thermal resistance from junction to ambient for SI1443EDH-T1-BE3 under standard test conditions?
Under standard test conditions (surface-mounted on 1" × 1" FR4 board, t ≤ 5 s), SI1443EDH-T1-BE3 has a maximum junction-to-ambient thermal resistance (RthJA) of 80 °C/W, with a typical value of 60 °C/W. This value reflects the benefit of its copper leadframe and four-drain configuration, which significantly improves heat transfer over legacy Alloy 42 packages.
Is SI1443EDH-T1-BE3 suitable for hot-swap applications requiring soft-start functionality?
Yes, SI1443EDH-T1-BE3 is explicitly designed for soft turn-on load switching, as confirmed in its Applications section. Its gate threshold profile and low Qg (8.6 nC typ.) allow controlled dV/dt ramping when driven through a series gate resistor, limiting inrush current in USB-powered peripherals and battery-connected modules.
What marking code identifies SI1443EDH-T1-BE3 on the device body?
The SI1443EDH-T1-BE3 is marked with the code "BT" on its top surface, as stated in the Features section of the datasheet. This marking is consistent across all units in the Si144xEDH family and aligns with Vishay's standard SC-70 part identification scheme.
SI1443EDH-T1-BE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- 6-TSSOP, SC-88, SOT-363
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 4A (Ta), 4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- -
- Rds On (Max) @ Id, Vgs:
- 54mOhm @ 4.3A, 10V
- Vgs(th) (Max) @ Id:
- 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 28 nC @ 10 V
- Vgs (Max):
- ±12V
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- -
- Power Dissipation (Max):
- 1.6W (Ta), 2.8W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SC-70-6
SI1443EDH-T1-BE3 FAQ
1.How can I place an order for SI1443EDH-T1-BE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI1443EDH-T1-BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI1443EDH-T1-BE3 reliable?
The price and inventory of SI1443EDH-T1-BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI1443EDH-T1-BE3 is usually 5 days.
3.What payment methods are accepted for SI1443EDH-T1-BE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI1443EDH-T1-BE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI1443EDH-T1-BE3?
SI1443EDH-T1-BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI1443EDH-T1-BE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI1443EDH-T1-BE3?
For technical support, including SI1443EDH-T1-BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI1443EDH-T1-BE3 requirements.
6.How does Aetrix verify that SI1443EDH-T1-BE3 is sourced from the original manufacturer or authorized distributors?
All SI1443EDH-T1-BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI1443EDH-T1-BE3 meets industry standards.
7.What is the process for return or replacement of SI1443EDH-T1-BE3?
All SI1443EDH-T1-BE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI1443EDH-T1-BE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI1443EDH-T1-BE3 part is unused and in its original packaging.
Return procedure for SI1443EDH-T1-BE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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