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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI1450DH-T1-E3

Name: SI1450DH-T1-E3
Brand: Vishay Siliconix
SKU: SI1450DH-T1-E3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI1450DH-T1-E3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: 6-TSSOP, SC-88, SOT-363

Datasheet:: SI1450DH-T1-E3.pdf

Description:: MOSFET N-CH 8V 4.53A/6.04A SC70

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Product details

Overview

SI1450DH-T1-E3 from Vishay Siliconix is an N-channel TrenchFET® power MOSFET rated for 8 V drain-source voltage, with R_DS(on) = 0.047 Ω at V_GS = 4.5 V and 4.0 A continuous drain current (package-limited), optimized for low-voltage load switching in space-constrained portable electronics.

For engineers reviewing the SI1450DH-T1-E3 datasheet, SI1450DH-T1-E3 pinout, SI1450DH-T1-E3 application, or SI1450DH-T1-E3 equivalent, key selection criteria include guaranteed 1.5 V gate drive capability, ultra-low gate charge (4.24 nC), thermal resistance (R_thJA = 60 °C/W typ.), SOT-363 package footprint, and halogen-free/RoHS-compliant construction.

Technical Context

This device uses trench-gate silicon technology to achieve enhanced conduction efficiency at low gate voltages, supporting direct logic-level drive from 1.5–4.5 V controllers. Its 6-pin SOT-363 package integrates dual-drain terminals per channel to reduce package inductance and improve current sharing.

The MOSFET features 100 % R_g tested gate resistance (7.3 Ω typ.), fast switching (t_d(on) = 8 ns, t_f = 5 ns), and a body diode with t_rr = 14.3 ns and Q_rr = 3.6 nC - enabling efficient synchronous rectification and reverse recovery in compact DC-DC stages.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	8 V - Maximum blocking voltage compatible with single-cell Li-ion and 3.3 V/5 V system rails.
R_DS(on)	0.047 Ω @ V_GS = 4.5 V, I_D = 4.0 A - Enables <190 mW conduction loss at 4 A, critical for thermal management in sealed enclosures.
Q_g	4.24 nC @ V_GS = 4.5 V - Reduces driver power demand and switching losses in high-frequency (>1 MHz) point-of-load converters.
I_D (cont)	4.0 A (package-limited) - Sustained current rating defined by SOT-363 thermal limits, not silicon capability.
V_GS(th)	0.3–1.0 V - Ensures reliable turn-on with 1.5 V logic outputs, eliminating need for level-shifting circuitry.
R_thJA	60 °C/W (typ.) - Junction-to-ambient thermal resistance on standard FR4; enables ~1.56 W dissipation at T_A = 25 °C.

Pinout & Package

SOT-363 (SC-70-6) surface-mount package with exposed drain pads for thermal enhancement; 2 mm × 1.25 mm footprint, 0.95 mm max height.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 4, 5	Drain (D)	Four parallel drain terminals - reduce package inductance and distribute current, improving thermal spreading and pulse handling.
3	Gate (G)	Single gate input - accepts logic-level drive; 100 % R_g tested to ensure consistent switching timing.
6	Source (S)	Common source node - referenced for gate drive and load return; ties directly to PCB ground plane for low-inductance layout.

Key Features

Feature	Design Value
TrenchFET® 1.5 V rated	Guaranteed turn-on with 1.5 V gate drive - eliminates external gate boosters in battery-powered systems.
100 % R_g tested	Ensures gate resistance ≤11 Ω - guarantees consistent t_d(on)/t_d(off) across production lots for timing-critical loads.
Halogen-free & RoHS	Complies with IEC 61249-2-21 and Directive 2002/95/EC - meets environmental requirements for consumer and medical end equipment.
Low Q_gd/Q_gs ratio	Q_gd = 0.81 nC, Q_gs = 1.2 nC - improves Miller immunity and reduces risk of spurious turn-on in high-dV/dt environments.

Applications

Battery-Powered Load Switch	USB Port Power Management
Use Scenario: Enabling/disabling power to peripherals (e.g., Bluetooth module, sensor array) in wearables and handhelds using a 1.8 V GPIO. IC Role / Device Role / Timing Role: Low-side load switch controlling V_CC rail delivery; operates as a digitally controlled series pass element. Use Value: 0.058 Ω R_DS(on) @ V_GS = 1.8 V minimizes dropout and self-heating during 4 A peak loads, extending battery runtime.	Use Scenario: Overcurrent-protected hot-swap control for USB 2.0 downstream ports in portable hubs and docking stations. IC Role / Device Role / Timing Role: Current-limiting switch with fast fault response; used in conjunction with current-sense resistors and comparator ICs. Use Value: 15 A pulsed drain rating and 14.3 ns body diode t_rr support robust short-circuit handling and clean current interruption without latch-up.
Point-of-Load DC-DC Synchronous Rectifier	Low-Voltage Motor Driver Half-Bridge
Use Scenario: High-efficiency secondary-side rectification in 3.3 V output buck converters for FPGA I/O banks and microcontroller cores. IC Role / Device Role / Timing Role: Synchronous rectifier replacing Schottky diode; driven by complementary PWM signal from controller. Use Value: 0.8–1.2 V body diode forward drop and 3.6 nC Q_rr reduce reverse recovery loss and EMI compared to discrete diodes.	Use Scenario: Low-side switch in H-bridge driving 5 V brushed DC motors in robotic toys and smart home actuators. IC Role / Device Role / Timing Role: Low-side power switch in half-bridge configuration; paired with external high-side P-channel or driver IC. Use Value: 4.24 nC total gate charge enables clean 1 MHz PWM operation with minimal driver IC loading and reduced gate-drive power loss.

Battery-Powered Load Switch

USB Port Power Management

Use Scenario: Enabling/disabling power to peripherals (e.g., Bluetooth module, sensor array) in wearables and handhelds using a 1.8 V GPIO.

IC Role / Device Role / Timing Role: Low-side load switch controlling V_CC rail delivery; operates as a digitally controlled series pass element.

Use Value: 0.058 Ω R_DS(on) @ V_GS = 1.8 V minimizes dropout and self-heating during 4 A peak loads, extending battery runtime.

Use Scenario: Overcurrent-protected hot-swap control for USB 2.0 downstream ports in portable hubs and docking stations.

IC Role / Device Role / Timing Role: Current-limiting switch with fast fault response; used in conjunction with current-sense resistors and comparator ICs.

Use Value: 15 A pulsed drain rating and 14.3 ns body diode t_rr support robust short-circuit handling and clean current interruption without latch-up.

Point-of-Load DC-DC Synchronous Rectifier

Low-Voltage Motor Driver Half-Bridge

Use Scenario: High-efficiency secondary-side rectification in 3.3 V output buck converters for FPGA I/O banks and microcontroller cores.

IC Role / Device Role / Timing Role: Synchronous rectifier replacing Schottky diode; driven by complementary PWM signal from controller.

Use Value: 0.8–1.2 V body diode forward drop and 3.6 nC Q_rr reduce reverse recovery loss and EMI compared to discrete diodes.

Use Scenario: Low-side switch in H-bridge driving 5 V brushed DC motors in robotic toys and smart home actuators.

IC Role / Device Role / Timing Role: Low-side power switch in half-bridge configuration; paired with external high-side P-channel or driver IC.

Use Value: 4.24 nC total gate charge enables clean 1 MHz PWM operation with minimal driver IC loading and reduced gate-drive power loss.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel low-voltage load switch applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si1440DH-T1-E3	R_DS(on) = 0.032 Ω @ 4.5 V (lower), but V_DS = 6 V (reduced voltage margin); same SOT-363 package and 1.5 V drive capability.	Better conduction efficiency below 6 V rails; unsuitable for 8 V transient-tolerant designs.	Select when system V_IN is strictly ≤6 V and lowest possible R_DS(on) is prioritized over voltage headroom.
DMN10H015LSD-13	R_DS(on) = 0.015 Ω @ 4.5 V (much lower), but V_DS = 10 V and package is SOT-26 (different pinout, no dual-drain layout).	Higher current capacity and voltage margin, but requires PCB redesign due to non-compatible footprint and pin assignment.	Choose only if upgrading thermal performance is critical and board revision is feasible; not a drop-in replacement.

Compared with SI1450DH-T1-E3, Si1440DH-T1-E3 offers lower on-resistance at the cost of reduced voltage rating, while DMN10H015LSD-13 provides superior R_DS(on) and voltage margin but demands layout changes - making SI1450DH-T1-E3 optimal for space-constrained 8 V systems requiring guaranteed 1.5 V drive and minimal BOM change.

Availability

SI1450DH-T1-E3 is available at Aetrix Electronics and suitable for battery-powered load switching, USB power management, and low-voltage synchronous rectification requiring stable component supply and lead-free compliance.

Supply support for SI1450DH-T1-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, optoelectronics, and passive components with emphasis on power efficiency and reliability.

The Si1450DH belongs to Vishay's TrenchFET® Gen III low-voltage logic-level MOSFET family, engineered specifically for high-density portable electronics where 1.5–4.5 V drive, minimal footprint, and thermal efficiency are essential.

FAQ

What is the maximum continuous drain current rating for SI1450DH-T1-E3?

The SI1450DH-T1-E3 has a continuous drain current rating of 4.0 A at T_A = 25 °C, limited by its SOT-363 package thermal capability rather than silicon capacity. At higher ambient temperatures (e.g., 70 °C), the rating drops to 3.62 A. This value is confirmed in the Absolute Maximum Ratings table under "Continuous Drain Current (T_J = 150 °C)" with footnote "a. Package limited." The SI1450DH-T1-E3 maintains this rating down to V_GS = 1.5 V, supporting direct logic-level control.

Does SI1450DH-T1-E3 support 1.5 V gate drive, and is it guaranteed across temperature?

Yes, SI1450DH-T1-E3 is explicitly rated for guaranteed operation at V_GS = 1.5 V, as stated in its Applications section and verified by V_GS(th) = 0.3–1.0 V (min to max) at T_J = 25 °C. The gate threshold remains functional across the full operating junction temperature range (−55 to +150 °C), with ΔV_GS(th)/T_J = −2.7 mV/°C confirming predictable turn-on behavior. This makes SI1450DH-T1-E3 suitable for direct interface with 1.5 V, 1.8 V, and 2.5 V logic families without level shifting.

What is the thermal resistance from junction to ambient (R_thJA) for SI1450DH-T1-E3, and how is it measured?

The SI1450DH-T1-E3 has a typical junction-to-ambient thermal resistance (R_thJA) of 60 °C/W, with a maximum of 80 °C/W, measured under standard conditions: surface-mounted on a 1" × 1" FR4 board with 1 oz copper. This value is specified in the Thermal Resistance Ratings table and applies for t ≤ 5 s pulse duration. For steady-state design, engineers should use the 80 °C/W maximum to calculate worst-case junction temperature rise under continuous load.

Is SI1450DH-T1-E3 halogen-free and RoHS compliant?

Yes, SI1450DH-T1-E3 is both halogen-free per IEC 61249-2-21 and compliant with the RoHS Directive 2002/95/EC, as confirmed in the Features section and Ordering Information (marked "Lead (Pb)-free"). The "-E3" suffix denotes lead-free termination, and the device contains no brominated flame retardants or chlorine-based compounds above regulated thresholds. Full compliance documentation is available via Vishay's PPAP portal under document number 74275.

What are the key differences between SI1450DH-T1-E3 and SI1450DH-T1-GE3?

The SI1450DH-T1-GE3 is identical to SI1450DH-T1-E3 in electrical and thermal specifications but adds halogen-free certification beyond RoHS compliance. Both share the same SOT-363 package, pinout, and 1.5 V gate drive capability. The "-GE3" suffix indicates compliance with IEC 61249-2-21 for halogen content (<900 ppm Br, <900 ppm Cl), whereas SI1450DH-T1-E3 meets RoHS but not necessarily halogen-free requirements. Designers targeting strict green electronics standards should specify SI1450DH-T1-GE3; otherwise, SI1450DH-T1-E3 satisfies standard lead-free mandates.

SI1450DH-T1-E3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: 6-TSSOP, SC-88, SOT-363

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 8 V

Current - Continuous Drain (Id) @ 25°C:: 4.53A (Ta), 6.04A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 1.5V, 4.5V

Rds On (Max) @ Id, Vgs:: 47mOhm @ 4A, 4.5V

Vgs(th) (Max) @ Id:: 1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 7.05 nC @ 5 V

Vgs (Max):: ±5V

Input Capacitance (Ciss) (Max) @ Vds:: 535 pF @ 4 V

FET Feature:: -

Power Dissipation (Max):: 1.56W (Ta), 2.78W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SC-70-6

SI1450DH-T1-E3 FAQ

1.How can I place an order for SI1450DH-T1-E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI1450DH-T1-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI1450DH-T1-E3 reliable?

The price and inventory of SI1450DH-T1-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI1450DH-T1-E3 is usually 5 days.

3.What payment methods are accepted for SI1450DH-T1-E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI1450DH-T1-E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI1450DH-T1-E3?

SI1450DH-T1-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI1450DH-T1-E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI1450DH-T1-E3?

For technical support, including SI1450DH-T1-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI1450DH-T1-E3 requirements.

6.How does Aetrix verify that SI1450DH-T1-E3 is sourced from the original manufacturer or authorized distributors?

All SI1450DH-T1-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI1450DH-T1-E3 meets industry standards.

7.What is the process for return or replacement of SI1450DH-T1-E3?

All SI1450DH-T1-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SI1450DH-T1-E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI1450DH-T1-E3 part is unused and in its original packaging.

Return procedure for SI1450DH-T1-E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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