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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI1450DH-T1-GE3

Name: SI1450DH-T1-GE3
Brand: Vishay Siliconix
SKU: SI1450DH-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI1450DH-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: 6-TSSOP, SC-88, SOT-363

Datasheet:: SI1450DH-T1-GE3.pdf

Description:: MOSFET N-CH 8V 4.53A/6.04A SC70

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Product details

Overview

SI1450DH-T1-GE3 from Vishay Siliconix is a halogen-free, lead-free N-channel TrenchFET® MOSFET rated for 8 V drain-source voltage, with R_DS(on) = 0.047 Ω at V_GS = 4.5 V and 4.0 A continuous drain current (package-limited), optimized for low-voltage load switching in space-constrained portable electronics.

For engineers reviewing the SI1450DH-T1-GE3 datasheet, SI1450DH-T1-GE3 pinout, SI1450DH-T1-GE3 application, or SI1450DH-T1-GE3 equivalent, key selection criteria include guaranteed 1.5 V gate drive capability, ultra-low gate charge (4.24 nC), thermal resistance (R_thJA = 60 °C/W typ.), SOT-363 package compatibility, and body diode recovery performance (t_rr = 14.3 ns).

Technical Context

This device implements a trench-gate silicon process enabling stable threshold voltage (V_GS(th) = 0.3–1.0 V) and low on-resistance across temperature. Its 1.5 V-rated gate enables direct interface with modern low-voltage logic outputs without level shifting.

The SOT-363 (SC-70-6) package integrates dual-drain terminals per channel to reduce source inductance and improve switching efficiency. The integrated body diode supports synchronous rectification and reverse-current protection in compact DC-DC and battery-switching topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	8 V - Maximum blocking voltage compatible with single-cell Li-ion and 3.3 V/5 V system rails
R_DS(on) @ V_GS = 1.5 V	0.069 Ω - Enables full conduction from 1.5 V logic, critical for ultra-low-power wake-up circuits
Q_g	4.24 nC - Low gate charge reduces driver power loss and enables high-frequency PWM operation
I_D (continuous)	4.0 A - Package-limited current rating suitable for USB port power switches and PMIC load control
R_thJA	60 °C/W (typ.) - Thermal performance validated on 1" × 1" FR4 board, supports >1 W dissipation in ambient conditions
t_rr	14.3 ns - Fast body diode recovery minimizes shoot-through risk in half-bridge configurations
V_GS(th)	0.3–1.0 V - Tight threshold range ensures predictable turn-on with low-noise digital I/O

Pinout & Package

SOT-363 (SC-70-6) surface-mount package with exposed drain pads for thermal enhancement and dual-drain configuration. Dimensions: 2.2 mm × 2.2 mm × 0.95 mm (max height).

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 4, 5	Drain (D)	Four parallel drain terminals reduce on-resistance and improve thermal path to PCB copper
3	Gate (G)	Single gate input with 7.3 Ω typical gate resistance; compatible with standard CMOS drivers
6	Source (S)	Common source node; connects to ground or low-side return path in load-switch topology

Key Features

Feature	Design Value
TrenchFET® architecture	Enables 1.5 V gate drive capability and sub-50 mΩ R_DS(on) at 4.5 V, reducing gate driver complexity
100 % R_g tested	Ensures consistent switching timing and eliminates batch-to-batch gate resistance variation
Halogen-free & RoHS-compliant	Meets IEC 61249-2-21 and Directive 2002/95/EC for environmentally regulated industrial and consumer designs
Guaranteed operation at V_GS = 1.5 V	Validated conduction down to 1.5 V gate drive, supporting energy-harvesting and ultra-low-power microcontrollers

Applications

USB Power Delivery Switch	Li-ion Battery Protection Circuit
Use Scenario: Isolating VBUS during hot-plug events or fault conditions in USB-C PD ports. IC Role / Device Role / Timing Role: Low-side load switch controlling power path between controller and connector. Use Value: 0.069 Ω R_DS(on) at 1.5 V enables direct control from PD controller GPIOs without external level shifters.	Use Scenario: Disabling discharge path during overcurrent or short-circuit detection in single-cell battery packs. IC Role / Device Role / Timing Role: Primary protection FET in two-FET battery protection IC configurations. Use Value: Fast 14.3 ns body diode recovery prevents latch-up during transient overvoltage events.
Wearable Sensor Node Power Gating	Low-Voltage FPGA I/O Bank Switch
Use Scenario: Shutting down sensor subsystems between measurement cycles to extend battery life. IC Role / Device Role / Timing Role: High-efficiency, low-quiescent-load power switch for 1.8 V/2.5 V peripheral domains. Use Value: 4.24 nC gate charge allows <1 µs turn-on with minimal driver overhead, preserving sleep-mode integrity.	Use Scenario: Enabling/disabling I/O banks on FPGAs during partial reconfiguration or power-state transitions. IC Role / Device Role / Timing Role: Rail-switching element for 1.2 V/1.5 V bank supplies with tight voltage tolerance. Use Value: 0.3–1.0 V V_GS(th) ensures reliable turn-on even under FPGA supply droop or noise coupling.

USB Power Delivery Switch

Li-ion Battery Protection Circuit

Use Scenario: Isolating VBUS during hot-plug events or fault conditions in USB-C PD ports.

IC Role / Device Role / Timing Role: Low-side load switch controlling power path between controller and connector.

Use Value: 0.069 Ω R_DS(on) at 1.5 V enables direct control from PD controller GPIOs without external level shifters.

Use Scenario: Disabling discharge path during overcurrent or short-circuit detection in single-cell battery packs.

IC Role / Device Role / Timing Role: Primary protection FET in two-FET battery protection IC configurations.

Use Value: Fast 14.3 ns body diode recovery prevents latch-up during transient overvoltage events.

Wearable Sensor Node Power Gating

Low-Voltage FPGA I/O Bank Switch

Use Scenario: Shutting down sensor subsystems between measurement cycles to extend battery life.

IC Role / Device Role / Timing Role: High-efficiency, low-quiescent-load power switch for 1.8 V/2.5 V peripheral domains.

Use Value: 4.24 nC gate charge allows <1 µs turn-on with minimal driver overhead, preserving sleep-mode integrity.

Use Scenario: Enabling/disabling I/O banks on FPGAs during partial reconfiguration or power-state transitions.

IC Role / Device Role / Timing Role: Rail-switching element for 1.2 V/1.5 V bank supplies with tight voltage tolerance.

Use Value: 0.3–1.0 V V_GS(th) ensures reliable turn-on even under FPGA supply droop or noise coupling.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel load switch applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si1440DH-T1-GE3	R_DS(on) = 0.032 Ω @ 4.5 V; higher 6.0 A ID rating; same SOT-363 package	Better conduction efficiency at >3 A loads; higher thermal mass required for sustained 6 A operation	Select when lower on-resistance and higher current headroom are needed, accepting slightly higher Q_g (5.1 nC)
DMN10H015LSD-13	R_DS(on) = 0.015 Ω @ 4.5 V; 10 V V_DS; TSOP-6 package (3.05 mm × 1.65 mm)	Smaller footprint but higher thermal resistance (R_thJA = 100 °C/W); not halogen-free certified	Choose for space-constrained designs where ultra-low R_DS(on) outweighs halogen-free compliance and thermal performance requirements

Compared with SI1450DH-T1-GE3, Si1440DH-T1-GE3 offers lower conduction loss at higher currents but requires more gate drive energy, while DMN10H015LSD-13 delivers superior R_DS(on) in a smaller package at the cost of thermal performance and environmental compliance.

Availability

SI1450DH-T1-GE3 is available at Aetrix Electronics and suitable for USB power delivery systems, wearable sensor nodes, and Li-ion battery protection circuits requiring stable component supply, halogen-free compliance, and guaranteed 1.5 V gate drive performance.

Supply support for SI1450DH-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.

The Si1450DH series belongs to Vishay's TrenchFET® low-voltage logic-level MOSFET product line, engineered specifically for battery-powered portable devices demanding minimal gate drive voltage and ultra-compact packaging.

FAQ

What is the maximum continuous drain current rating for SI1450DH-T1-GE3?

The SI1450DH-T1-GE3 has a continuous drain current rating of 4.0 A at T_A = 25 °C, limited by its SOT-363 package thermal capability. At T_A = 70 °C, the derated current is 3.62 A. This rating assumes operation on a 1" × 1" FR4 board with no additional heatsinking. The SI1450DH-T1-GE3 datasheet specifies these values under "Absolute Maximum Ratings" and confirms they are package-limited, not silicon-limited.

Does SI1450DH-T1-GE3 support gate drive voltages below 2.5 V?

Yes, the SI1450DH-T1-GE3 is explicitly characterized and guaranteed for operation at V_GS = 1.5 V, delivering R_DS(on) = 0.069 Ω at I_D = 1.28 A. Its V_GS(th) range of 0.3–1.0 V ensures reliable turn-on with 1.5 V logic families. This capability is documented in both the Product Summary and the "Specifications" table of the SI1450DH-T1-GE3 datasheet.

What is the thermal resistance from junction to ambient for SI1450DH-T1-GE3?

The SI1450DH-T1-GE3 has a typical junction-to-ambient thermal resistance (R_thJA) of 60 °C/W under standard test conditions (surface-mounted on 1" × 1" FR4 board). The maximum specified value is 80 °C/W. This parameter is measured with t ≤ 5 s pulse duration and is critical for estimating temperature rise under steady-state or pulsed load conditions in the SI1450DH-T1-GE3 application layout.

Is SI1450DH-T1-GE3 halogen-free and RoHS-compliant?

Yes, SI1450DH-T1-GE3 is both halogen-free per IEC 61249-2-21 and compliant with the RoHS Directive 2002/95/EC. The "-GE3" suffix explicitly denotes lead-free and halogen-free construction. This compliance is confirmed in the ordering information section and the FEATURES list of the official SI1450DH-T1-GE3 datasheet (Document Number: 74275, Rev. B).

What is the total gate charge (Q_g) of SI1450DH-T1-GE3 at 4.5 V gate drive?

The SI1450DH-T1-GE3 has a typical total gate charge (Q_g) of 4.24 nC when driven at V_GS = 4.5 V with V_DS = 4 V and I_D = 4.0 A. This value is specified in the "SPECIFICATIONS" table under Dynamic parameters and directly impacts switching speed and driver power consumption in the SI1450DH-T1-GE3 circuit implementation.

SI1450DH-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: 6-TSSOP, SC-88, SOT-363

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 8 V

Current - Continuous Drain (Id) @ 25°C:: 4.53A (Ta), 6.04A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 1.5V, 4.5V

Rds On (Max) @ Id, Vgs:: 47mOhm @ 4A, 4.5V

Vgs(th) (Max) @ Id:: 1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 7.05 nC @ 5 V

Vgs (Max):: ±5V

Input Capacitance (Ciss) (Max) @ Vds:: 535 pF @ 4 V

FET Feature:: -

Power Dissipation (Max):: 1.56W (Ta), 2.78W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SC-70-6

SI1450DH-T1-GE3 FAQ

1.How can I place an order for SI1450DH-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI1450DH-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI1450DH-T1-GE3 reliable?

The price and inventory of SI1450DH-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI1450DH-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SI1450DH-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI1450DH-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI1450DH-T1-GE3?

SI1450DH-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI1450DH-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI1450DH-T1-GE3?

For technical support, including SI1450DH-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI1450DH-T1-GE3 requirements.

6.How does Aetrix verify that SI1450DH-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SI1450DH-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI1450DH-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SI1450DH-T1-GE3?

All SI1450DH-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI1450DH-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI1450DH-T1-GE3 part is unused and in its original packaging.

Return procedure for SI1450DH-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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