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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI1467DH-T1-BE3

Name: SI1467DH-T1-BE3
Brand: Vishay Siliconix
SKU: SI1467DH-T1-BE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI1467DH-T1-BE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: 6-TSSOP, SC-88, SOT-363

Datasheet:: SI1467DH-T1-BE3.pdf

Description:: MOSFET P-CH 20V 3A/2.7A SC70-6

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Product details

Overview

SI1467DH-T1-BE3 from Vishay Siliconix is a P-channel enhancement-mode MOSFET optimized for low-voltage load switching in space-constrained portable electronics, featuring -20 V V_DS, 0.090 Ω R_DS(on) at V_GS = -4.5 V, -2.7 A continuous drain current (T_C = 25 °C), 9.0 nC total gate charge, and SC-70 (SOT-363) 6-lead copper leadframe package.

For engineers reviewing the SI1467DH-T1-BE3 datasheet, SI1467DH-T1-BE3 pinout, SI1467DH-T1-BE3 application, or SI1467DH-T1-BE3 equivalent, this device is selected for compact battery-powered systems requiring fast turn-on/turn-off, low conduction loss at 1.8–4.5 V gate drive, and thermal performance superior to Alloy 42 leadframe alternatives.

Technical Context

This P-channel MOSFET uses TrenchFET® technology to achieve low R_DS(on) with minimal gate charge, enabling efficient operation in high-side switch configurations where gate drive voltage is referenced to the source. Its -1.0 V maximum V_GS(th) ensures reliable turn-on with logic-level controllers down to 1.8 V.

The SC-70 (SOT-363) package integrates four drain terminals and one source terminal, reducing both on-resistance and junction-to-foot thermal resistance (R_thJF = 34 °C/W typ.) compared to legacy 3-pin packages. Body diode recovery time (t_rr = 21 ns typ.) supports moderate-frequency switching in DC-DC and power-path applications.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-20 V - Maximum drain-source blocking voltage for 3.3 V and lower system rails.
R_DS(on) @ V_GS = -4.5 V	0.090 Ω max - Enables ≤180 mW conduction loss at -2.0 A, critical for thermally limited handheld PCBs.
I_D (continuous)	-2.7 A @ T_C = 25 °C - Sustained load current capability without heatsink under typical board-mount conditions.
Q_g	9.0 nC typ. - Low gate charge allows fast switching with minimal driver strength (e.g., GPIO or low-power logic).
R_thJA	60 °C/W typ. - Junction-to-ambient thermal resistance on 1" × 1" FR4, supporting 1.5 W dissipation at 25 °C ambient.
V_GS(th)	-0.4 to -1.0 V - Guaranteed turn-on threshold compatible with 1.8 V I/O domains and open-drain control signals.
t_rr	21 ns typ. - Fast body diode recovery enables use in synchronous rectifier or bidirectional power-path circuits.

Pinout & Package

SI1467DH-T1-BE3 is housed in a surface-mount SC-70 (SOT-363) 6-lead package with copper leadframe, measuring 2.00 mm × 2.10 mm × 1.00 mm (L × W × H). The package features four parallel drain leads for reduced resistance and improved thermal transfer to the PCB.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 4, 6	Drain (D)	Four electrically connected drain terminals - lowers R_DS(on) and improves heat spreading across PCB copper.
3	Gate (G)	Control input - accepts standard logic-level negative gate drive; 10 Ω max gate resistance limits ringing.
5	Source (S)	Reference node for gate drive and current return path - tied to system ground or battery positive in high-side switch.

Key Features

Feature	Design Value
TrenchFET® process	Enables 0.090 Ω R_DS(on) at -4.5 V in ultra-small SC-70 package - no trade-off between size and efficiency.
100 % R_g tested	Guarantees gate resistance ≤20 Ω - ensures predictable switching speed and EMI behavior across production lots.
Copper leadframe	Reduces R_thJF to 34 °C/W (vs. 163 °C/W for Alloy 42) - delivers 2.4× higher power handling in same footprint.
Low V_GS(th)	-0.4 to -1.0 V range - ensures robust turn-on with 1.8 V microcontroller outputs without level-shifting circuitry.
Fast body diode	t_rr = 21 ns typ., Q_rr = 15 nC - minimizes reverse recovery loss in power-path OR-ing and hot-swap circuits.

Applications

Smartphone Power Management	USB-C Port Protection
Use Scenario: High-side load switch controlling power to camera module or display backlight in battery-powered smartphones. IC Role / Device Role: P-channel MOSFET configured as active-low controlled high-side switch, driven directly by baseband processor GPIO. Use Value: 0.090 Ω R_DS(on) limits voltage drop to <180 mV at 2 A, preserving battery runtime; SC-70 footprint saves >40% board area vs. SOT-23.	Use Scenario: Reverse-current protection and hot-plug control in USB-C receptacle circuits with 5 V V_BUS. IC Role / Device Role: Back-to-back P-MOSFET configuration (with companion device) to block reverse current and enable safe insertion/removal. Use Value: -1.0 V V_GS(th) ensures full enhancement with 3.3 V control logic; fast t_rr prevents latch-up during transient bus faults.
Wireless Earbud Charging Case	IoT Sensor Node Power Gating
Use Scenario: Isolating charging circuitry from main battery when earbuds are docked, preventing leakage and self-discharge. IC Role / Device Role: Low-leakage P-channel switch placed between battery and linear charger IC, controlled by MCU wake signal. Use Value: IDSS ≤ -1 μA at -20 V ensures <100 nA standby current - extends shelf life of sealed charging cases beyond 6 months.	Use Scenario: Power gating for BLE radio, environmental sensor, and memory in ultra-low-power industrial IoT nodes. IC Role / Device Role: High-side switch enabling complete subsystem shutdown between measurement cycles, driven by RTC alarm output. Use Value: 9.0 nC Q_g allows sub-10 μs turn-on with minimal energy overhead; -55 to +150 °C operating range supports outdoor deployment.

Smartphone Power Management

USB-C Port Protection

Use Scenario: High-side load switch controlling power to camera module or display backlight in battery-powered smartphones.

IC Role / Device Role: P-channel MOSFET configured as active-low controlled high-side switch, driven directly by baseband processor GPIO.

Use Value: 0.090 Ω R_DS(on) limits voltage drop to <180 mV at 2 A, preserving battery runtime; SC-70 footprint saves >40% board area vs. SOT-23.

Use Scenario: Reverse-current protection and hot-plug control in USB-C receptacle circuits with 5 V V_BUS.

IC Role / Device Role: Back-to-back P-MOSFET configuration (with companion device) to block reverse current and enable safe insertion/removal.

Use Value: -1.0 V V_GS(th) ensures full enhancement with 3.3 V control logic; fast t_rr prevents latch-up during transient bus faults.

Wireless Earbud Charging Case

IoT Sensor Node Power Gating

Use Scenario: Isolating charging circuitry from main battery when earbuds are docked, preventing leakage and self-discharge.

IC Role / Device Role: Low-leakage P-channel switch placed between battery and linear charger IC, controlled by MCU wake signal.

Use Value: IDSS ≤ -1 μA at -20 V ensures <100 nA standby current - extends shelf life of sealed charging cases beyond 6 months.

Use Scenario: Power gating for BLE radio, environmental sensor, and memory in ultra-low-power industrial IoT nodes.

IC Role / Device Role: High-side switch enabling complete subsystem shutdown between measurement cycles, driven by RTC alarm output.

Use Value: 9.0 nC Q_g allows sub-10 μs turn-on with minimal energy overhead; -55 to +150 °C operating range supports outdoor deployment.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel load switch applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si1461DH-T1-BE3	R_DS(on) = 0.125 Ω @ -4.5 V (higher), Q_g = 6.5 nC (lower), same SC-70 package and pinout.	Better switching efficiency but higher conduction loss - preferred for <1 A loads with aggressive PWM duty cycles.	Select Si1461DH-T1-BE3 if gate drive strength is limited and average current stays below 1.5 A.
DMN2020LSD-13	N-channel, -20 V, 0.085 Ω @ -4.5 V, SO-8 package, requires high-side driver or charge pump.	Higher board area and BOM count due to external driver; better R_DS(on) but no native high-side simplicity.	Choose DMN2020LSD-13 only when layout allows SO-8 and system already includes gate-driving infrastructure.

Compared with Si1461DH-T1-BE3, SI1467DH-T1-BE3 delivers 25% lower R_DS(on) for higher-current loads, while DMN2020LSD-13 offers marginally better on-resistance at the cost of added complexity and footprint - SI1467DH-T1-BE3 remains optimal for direct GPIO-driven, space-constrained high-side switching.

Availability

SI1467DH-T1-BE3 is available at Aetrix Electronics and suitable for smartphone power management, USB-C port protection, and wireless earbud charging case designs requiring stable component supply, RoHS-compliant packaging, and long-term lifecycle support.

Supply support for SI1467DH-T1-BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on reliability, miniaturization, and thermal performance.

The SI1467DH-T1-BE3 belongs to Vishay's LITTLE FOOT® SC-70 P-channel MOSFET family, engineered specifically for high-density portable electronics where board space, thermal headroom, and logic-level drivability are critical constraints.

FAQ

What is the maximum continuous drain current rating for SI1467DH-T1-BE3 at 70 °C case temperature?

The SI1467DH-T1-BE3 supports -2.7 A continuous drain current at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This value reflects derating from the 2.78 W maximum power dissipation at that temperature and confirms stable operation in thermally constrained handheld enclosures where case temperature exceeds ambient by 45 °C.

Does SI1467DH-T1-BE3 require a gate resistor for ESD protection or switching control?

SI1467DH-T1-BE3 does not require an external gate resistor for basic ESD protection, as it includes integrated gate protection. However, a small series resistor (typically 5–22 Ω) is recommended between the driver and pin 3 (Gate) to dampen ringing and reduce EMI during fast switching - especially when driving from high-speed GPIOs or with long PCB traces.

Can SI1467DH-T1-BE3 be used in a high-side switch configuration with a 1.8 V microcontroller output?

Yes, SI1467DH-T1-BE3 is fully compatible with 1.8 V logic-level control: its V_GS(th) range (-0.4 to -1.0 V) guarantees turn-on at V_GS = -1.8 V, and R_DS(on) = 0.150 Ω max at that voltage ensures acceptable conduction loss. No level shifter is needed when the MCU GPIO drives the gate referenced to the source.

What is the thermal resistance from junction to foot (R_thJF) for SI1467DH-T1-BE3, and why does it matter?

SI1467DH-T1-BE3 has a typical R_thJF of 34 °C/W, measured from junction to drain foot on the PCB. This parameter matters because it quantifies how effectively heat flows from the silicon die into the PCB copper through the four drain leads - enabling accurate thermal design without heatsinks in compact layouts where ambient-to-case paths are limited.

Is SI1467DH-T1-BE3 halogen-free and RoHS-compliant?

Yes, SI1467DH-T1-BE3 is both halogen-free and RoHS-compliant, as confirmed by Vishay's material declarations and ordering code suffix "-BE3", which denotes lead (Pb)-free and halogen-free construction per JEDEC J-STD-609 and EU Directive 2011/65/EU.

SI1467DH-T1-BE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: 6-TSSOP, SC-88, SOT-363

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 2.7A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: 90mOhm @ 2A, 4.5V

Vgs(th) (Max) @ Id:: 1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 13.5 nC @ 4.5 V

Vgs (Max):: ±8V

Input Capacitance (Ciss) (Max) @ Vds:: 561 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 1.5W (Ta), 2.78W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SC-70-6

SI1467DH-T1-BE3 FAQ

1.How can I place an order for SI1467DH-T1-BE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI1467DH-T1-BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI1467DH-T1-BE3 reliable?

The price and inventory of SI1467DH-T1-BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI1467DH-T1-BE3 is usually 5 days.

3.What payment methods are accepted for SI1467DH-T1-BE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI1467DH-T1-BE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI1467DH-T1-BE3?

SI1467DH-T1-BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI1467DH-T1-BE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI1467DH-T1-BE3?

For technical support, including SI1467DH-T1-BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI1467DH-T1-BE3 requirements.

6.How does Aetrix verify that SI1467DH-T1-BE3 is sourced from the original manufacturer or authorized distributors?

All SI1467DH-T1-BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI1467DH-T1-BE3 meets industry standards.

7.What is the process for return or replacement of SI1467DH-T1-BE3?

All SI1467DH-T1-BE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI1467DH-T1-BE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI1467DH-T1-BE3 part is unused and in its original packaging.

Return procedure for SI1467DH-T1-BE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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