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Vishay Siliconix SI1471DH-T1-E3
- Part No.:
- SI1471DH-T1-E3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- 6-TSSOP, SC-88, SOT-363
- Datasheet:
-
SI1471DH-T1-E3.pdf
- Description:
- MOSFET P-CH 30V 2.7A SC70-6
- Quantity:
- Payment:
- Shipping:
Inventory:8,093
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Product details
Overview
SI1471DH-T1-E3 from Vishay Siliconix is a P-channel enhancement-mode TrenchFET® MOSFET rated for -30 V drain-source voltage, 0.100 Ω RDS(on) at VGS = -10 V, and -2.7 A continuous drain current (package-limited), designed for low-voltage load switching in portable electronics.
For engineers reviewing the SI1471DH-T1-E3 datasheet, SI1471DH-T1-E3 pinout, SI1471DH-T1-E3 application, or SI1471DH-T1-E3 equivalent, this device offers verified thermal performance with RthJA = 60 °C/W (typ.), 6.5 nC total gate charge, and SOT-363 (SC-70) packaging optimized for space-constrained DC-DC and battery management circuits.
Technical Context
This P-channel MOSFET uses trench-gate silicon technology to achieve low on-resistance and fast switching with 22 ns turn-on delay and 17 ns fall time at VGEN = -4.5 V. Its gate threshold voltage of -0.6 V to -1.6 V enables reliable operation with 2.5 V–4.5 V logic-level drive.
The device integrates a body diode with VSD = -0.83 V at -2 A and trr = 20 ns, supporting synchronous rectification and reverse-current blocking in compact power rails. Thermal design is supported by RthJF = 34 °C/W (steady-state) and copper leadframe construction.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -30 V - Maximum drain-source blocking voltage for 3.3 V/5 V system rail protection |
| RDS(on) | 0.100 Ω at VGS = -10 V - Enables ≤270 mW conduction loss at -2.7 A continuous current |
| Qg | 6.5 nC - Low gate charge supports efficient 1–2 MHz switching in portable DC-DC converters |
| ID (continuous) | -2.7 A (package-limited) - Rated for sustained load switching on FR4 PCBs without heatsink |
| RthJA | 60 °C/W (typ.) - Junction-to-ambient thermal resistance measured on 1" × 1" FR4 board |
| VGS(th) | -0.6 V to -1.6 V - Ensures full enhancement with 2.5 V microcontroller GPIO drive |
| Ciss | 445 pF - Input capacitance compatible with standard gate drivers in battery-powered systems |
Pinout & Package
SOT-363 (SC-70, 6-lead) package with copper leadframe for enhanced thermal conductivity and reduced RthJF. Four drain terminals (Pins 1, 2, 4, 5) provide parallel current paths and lower effective RDS(on) and thermal resistance.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 4, 5 | Drain (D) | Four parallel drain connections reduce effective on-resistance and improve heat spreading to PCB |
| 3 | Gate (G) | Single control terminal accepting standard logic-level negative gate drive |
| 6 | Source (S) | Common source node; connects to system ground or high-side return path in load switch topology |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® architecture | Delivers 0.100 Ω RDS(on) in ultra-small SOT-363, enabling higher efficiency than planar MOSFETs of same size |
| Copper leadframe | Reduces RthJF to 34 °C/W (typ.), improving power handling over Alloy 42 equivalents by >4× |
| Logic-level gate drive | Operates fully enhanced down to VGS = -2.5 V, eliminating need for gate boosters in 3.3 V systems |
| Halogen-free & RoHS-compliant | Meets IEC 61249-2-21 and Directive 2002/95/EC for environmentally regulated portable end equipment |
| Low Qgd/Qg ratio | 2.2 nC / 6.5 nC = 0.34 - Supports stable hard-switching with minimal Miller-induced shoot-through risk |
Applications
| Battery Protection Circuit | USB Port Power Switch |
|---|---|
Use Scenario: Reverse-current blocking and overcurrent shutdown in Li-ion battery packs. IC Role / Device Role / Timing Role: High-side load switch controlling battery discharge path with fast fault response. Use Value: 0.175 Ω RDS(on) at VGS = -2.5 V ensures minimal voltage drop during low-power sleep mode. |
Use Scenario: Hot-swap enable/disable of USB VBUS to peripheral devices. IC Role / Device Role / Timing Role: P-channel MOSFET used as controlled series pass element in USB 2.0 power delivery path. Use Value: 22 ns td(on) and 17 ns tf support clean, bounce-free insertion/removal detection timing. |
| Smartphone Backlight Dimming | Wearable Sensor Power Gating |
Use Scenario: PWM-controlled LED current regulation in OLED/LCD backlight drivers. IC Role / Device Role / Timing Role: Low-side or high-side switching element modulating LED string current at 1–5 kHz. Use Value: 6.5 nC Qg minimizes gate driver power consumption in always-on wearable subsystems. |
Use Scenario: Periodic wake-up and shutdown of inertial or environmental sensors in hearables. IC Role / Device Role / Timing Role: Load switch isolating sensor supply rail during deep-sleep states. Use Value: -0.6 V VGS(th) guarantees reliable turn-on with 1.8 V MCU I/O, reducing BOM count. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel load switch applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si1472DH-T1-E3 | Same SOT-363 package, but n-channel (-30 V, 0.075 Ω @ -10 V); requires high-side driver or level shift | Used in low-side switching configurations only; not direct replacement in high-side load switch topologies | Select only when circuit topology permits n-channel placement and gate drive capability exists |
| DMG3415L-7 | N-channel 20 V MOSFET in SOT-23; RDS(on) = 0.035 Ω @ -4.5 V; lacks integrated body diode rating data | Requires external bootstrap or charge-pump for high-side use; unsuitable for reverse-blocking without added components | Consider only for low-side switching where lower RDS(on) justifies redesign and additional drive complexity |
Compared with SI1471DH-T1-E3, Si1472DH-T1-E3 shifts implementation to low-side topology with better RDS(on) but added drive overhead, while DMG3415L-7 trades package compatibility and body diode specs for marginally lower on-resistance-neither offers pin-compatible substitution.
Availability
SI1471DH-T1-E3 is available at Aetrix Electronics and suitable for portable device load switching, USB power management, and wearable sensor power gating requiring stable component supply across production lifecycles.
Supply support for SI1471DH-T1-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors and passive components, specializing in high-reliability power MOSFETs, diodes, and optoelectronics for industrial, computing, and consumer markets.
The Si147x DH series targets ultra-compact, low-voltage P-channel switching in battery-powered systems, emphasizing logic-level drive compatibility, thermal efficiency, and halogen-free compliance for portable electronics.
FAQ
What is the maximum continuous drain current rating for SI1471DH-T1-E3?
The SI1471DH-T1-E3 is rated for -2.7 A continuous drain current under package-limited conditions at TC = 25 °C, as specified in the Absolute Maximum Ratings table. This value assumes surface mounting on a 1" × 1" FR4 board and reflects thermal limits rather than silicon capability. At TA = 25 °C, the rating drops to -2.8 A due to junction-to-ambient constraints.
Does SI1471DH-T1-E3 support 2.5 V logic-level gate drive?
Yes, SI1471DH-T1-E3 supports 2.5 V logic-level gate drive: its gate threshold voltage VGS(th) ranges from -0.6 V to -1.6 V, and RDS(on) is characterized at VGS = -2.5 V (0.175 Ω). This ensures full enhancement and low conduction loss when driven directly by 2.5 V microcontrollers or PMICs without level shifting.
What is the thermal resistance from junction to ambient for SI1471DH-T1-E3?
The typical junction-to-ambient thermal resistance (RthJA) for SI1471DH-T1-E3 is 60 °C/W, measured on a 1" × 1" FR4 board per JEDEC standards. The maximum specified value is 80 °C/W. This parameter governs steady-state power dissipation limits and must be applied with TJ(max) = 150 °C to determine safe operating current at given ambient temperatures.
Is SI1471DH-T1-E3 halogen-free and RoHS-compliant?
Yes, SI1471DH-T1-E3 is both halogen-free per IEC 61249-2-21 and compliant with RoHS Directive 2002/95/EC. The "-E3" suffix explicitly denotes lead-free and halogen-free construction. This makes the device suitable for environmentally regulated consumer electronics including smartphones, tablets, and wearables sold in EU and other restricted markets.
What is the total gate charge (Qg) of SI1471DH-T1-E3 and why does it matter?
The total gate charge (Qg) of SI1471DH-T1-E3 is 6.5 nC (typ.) at VDS = -15 V and VGS = -4.5 V. This value directly determines gate driver power consumption and switching speed: lower Qg reduces driver losses and enables faster transitions, critical for high-frequency DC-DC converters and PWM-controlled loads in portable devices using SI1471DH-T1-E3.
SI1471DH-T1-E3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- 6-TSSOP, SC-88, SOT-363
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 2.7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 2.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 100mOhm @ 2A, 10V
- Vgs(th) (Max) @ Id:
- 1.6V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 9.8 nC @ 4.5 V
- Vgs (Max):
- ±12V
- Input Capacitance (Ciss) (Max) @ Vds:
- 445 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1.5W (Ta), 2.78W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SC-70-6
SI1471DH-T1-E3 FAQ
1.How can I place an order for SI1471DH-T1-E3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI1471DH-T1-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI1471DH-T1-E3 reliable?
The price and inventory of SI1471DH-T1-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI1471DH-T1-E3 is usually 5 days.
3.What payment methods are accepted for SI1471DH-T1-E3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI1471DH-T1-E3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI1471DH-T1-E3?
SI1471DH-T1-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI1471DH-T1-E3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI1471DH-T1-E3?
For technical support, including SI1471DH-T1-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI1471DH-T1-E3 requirements.
6.How does Aetrix verify that SI1471DH-T1-E3 is sourced from the original manufacturer or authorized distributors?
All SI1471DH-T1-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI1471DH-T1-E3 meets industry standards.
7.What is the process for return or replacement of SI1471DH-T1-E3?
All SI1471DH-T1-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SI1471DH-T1-E3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI1471DH-T1-E3 part is unused and in its original packaging.
Return procedure for SI1471DH-T1-E3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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