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Vishay Siliconix SI1471DH-T1-GE3
- Part No.:
- SI1471DH-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- 6-TSSOP, SC-88, SOT-363
- Datasheet:
-
SI1471DH-T1-GE3.pdf
- Description:
- MOSFET P-CH 30V 2.7A SC70-6
- Quantity:
- Payment:
- Shipping:
Inventory:9,821
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Product details
Overview
SI1471DH-T1-GE3 from Vishay Siliconix is a P-channel enhancement-mode TrenchFET® MOSFET rated for -30 V drain-source voltage, 0.100 Ω RDS(on) at VGS = -10 V, and -2.7 A continuous drain current (package-limited), designed for low-voltage load switching in portable electronics with halogen-free and RoHS-compliant construction.
For engineers reviewing the SI1471DH-T1-GE3 datasheet, SI1471DH-T1-GE3 pinout, SI1471DH-T1-GE3 application, or SI1471DH-T1-GE3 equivalent, key selection criteria include its SOT-363 (SC-70) 6-lead copper leadframe package, -2.5 V gate threshold enabling 3.3 V logic-level drive, body diode forward voltage of -0.83 V at -2 A, and 6.5 nC total gate charge for fast switching in battery-powered systems.
Technical Context
This device employs trench-gate silicon technology to achieve low on-resistance in a miniature surface-mount package. Its four-drain-terminal configuration reduces both RDS(on) and junction-to-foot thermal resistance (RthJF = 34 °C/W typ.), while the copper leadframe improves thermal performance over Alloy 42 alternatives.
The SI1471DH-T1-GE3 operates as a single-channel high-side or low-side switch with gate threshold voltage (VGS(th)) ranging from -0.6 V to -1.6 V, ensuring reliable turn-on with 2.5 V–4.5 V logic signals. Its body diode exhibits trr = 20 ns and Qrr = 12 nC, supporting moderate-frequency synchronous rectification or reverse polarity protection.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -30 V - Maximum blocking voltage for 3.3 V/5 V system rail protection |
| RDS(on) @ VGS = -4.5 V | 0.120 Ω - Enables <150 mW conduction loss at -1.8 A in portable load switches |
| ID (continuous) | -2.7 A - Package-limited current rating on standard FR4 PCB |
| Qg | 6.5 nC - Supports >1 MHz switching with low gate-drive power in DC-DC controllers |
| VGS(th) | -0.6 to -1.6 V - Ensures full enhancement with 2.5 V microcontroller GPIO |
| RthJA | 60 °C/W (typ.) - Allows ~1.5 W dissipation at 25 °C ambient on 1"×1" board |
| VSD | -0.83 V @ IS = -2 A - Low forward drop for reverse-current blocking in USB/charging paths |
Pinout & Package
SOT-363 (SC-70) 6-lead package with copper leadframe, featuring four parallel drain terminals for reduced resistance and improved thermal transfer to PCB.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 4, 5 | Drain (D) | Four electrically connected drain leads - lowers RDS(on) and RthJF by distributing current and heat across multiple PCB pads |
| 3 | Gate (G) | Control terminal - accepts logic-level gate drive; requires no level-shifting for 2.5 V–4.5 V MCU outputs |
| 6 | Source (S) | Reference node for gate drive and current return path - tied to system ground or battery negative in high-side configurations |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® architecture | Delivers 0.100 Ω RDS(on) at -10 V in SC-70 - highest power density among P-channel MOSFETs in this footprint |
| Copper leadframe construction | Reduces RthJF to 34 °C/W (vs. 163 °C/W for Alloy 42) - enables 2.3× higher power handling without heatsink |
| Halogen-free & RoHS-compliant | Meets IEC 61249-2-21 and Directive 2002/95/EC - supports environmental compliance for global consumer electronics |
| Low VGS(th) distribution | -0.6 V min threshold ensures guaranteed turn-on with 2.5 V logic - eliminates need for gate boosters in wearables |
| Optimized body diode | trr = 20 ns and Qrr = 12 nC - minimizes switching loss during reverse recovery in load-dump or hot-swap circuits |
Applications
| USB Power Switching | Smartphone Battery Protection |
|---|---|
|
Use Scenario: Isolating USB VBUS from system rails during enumeration or fault conditions. IC Role / Device Role / Timing Role: High-side load switch controlling 5 V power delivery path with reverse-current blocking. Use Value: VSD = -0.83 V prevents backfeed from peripherals; 0.120 Ω RDS(on) limits voltage drop to <220 mV at 1.8 A charging current. |
Use Scenario: Disconnecting Li-ion battery from system during overvoltage, overtemperature, or short-circuit events. IC Role / Device Role / Timing Role: Low-side protection switch placed between battery cathode and system ground. Use Value: -2.7 A rating handles peak pulsed loads; 6.5 nC Qg enables fast shutdown (<100 ns) via protection IC output. |
| Wearable Device Power Management | Bluetooth Headset Load Control |
|
Use Scenario: Enabling/disabling sensor subsystems (e.g., IMU, HRM) to extend battery life between charges. IC Role / Device Role / Timing Role: Low-quiescent-current P-channel switch controlled by ARM Cortex-M0+ GPIO. Use Value: -1.6 V max VGS(th) guarantees turn-on with 3.0 V supply; IGSS = -100 nA minimizes standby leakage. |
Use Scenario: Sequencing power to Bluetooth radio, codec, and speaker amplifier in compact earbuds. IC Role / Device Role / Timing Role: Compact-area load switch managing multiple 1.8 V/3.3 V domains from single Li-Po cell. Use Value: SOT-363 footprint (2.0 × 2.1 mm) saves >40% board area vs. SO-8; RthJA = 60 °C/W sustains 1.2 W bursts. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel load switch applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si1472DH-T1-GE3 | Same SOT-363 package but N-channel; requires gate driver or high-side controller for load switching | Used where active-low enable or level-shifted control is acceptable; not direct replacement for high-side P-channel use | Select only when redesigning control logic to accommodate N-channel topology and bootstrap requirements |
| DMN2053LFG-7 | N-channel 20 V MOSFET in SOT-363; 0.075 Ω RDS(on) @ -4.5 V but lacks integrated body diode optimization for reverse blocking | Better for low-VDS synchronous rectification; unsuitable for reverse-polarity protection without external diode | Prefer for efficiency-critical DC-DC stages; avoid where unidirectional blocking or low VSD is required |
Compared with SI1471DH-T1-GE3, Si1472DH-T1-GE3 shifts control architecture to N-channel with lower RDS(on) but added complexity, while DMN2053LFG-7 trades body diode performance for marginally better conduction - neither offers pin-compatible P-channel functionality in the same footprint.
Availability
SI1471DH-T1-GE3 is available at Aetrix Electronics and suitable for USB power switching, smartphone battery protection, wearable device power management, and Bluetooth headset load control requiring stable component supply and halogen-free compliance.
Supply support for SI1471DH-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix designs discrete semiconductors with emphasis on power efficiency, miniaturization, and reliability for high-volume electronics markets.
The SI1471DH-T1-GE3 belongs to the LITTLE FOOT® TrenchFET® family, engineered specifically for space-constrained portable devices needing robust, logic-level P-channel switching in sub-2 mm² footprints.
FAQ
What is the maximum continuous drain current rating for SI1471DH-T1-GE3 under typical PCB conditions?
The SI1471DH-T1-GE3 has a continuous drain current rating of -2.7 A at TC = 25 °C, limited by its SOT-363 package thermal capability rather than silicon die. This value assumes mounting on a 1" × 1" FR4 board with standard copper coverage; derating to -2.3 A applies at TC = 70 °C per the datasheet's absolute maximum ratings table. The SI1471DH-T1-GE3 maintains this rating across its full operating temperature range when heatsinking is not added.
Does SI1471DH-T1-GE3 support direct drive from a 2.5 V microcontroller GPIO?
Yes, SI1471DH-T1-GE3 supports direct drive from a 2.5 V microcontroller GPIO due to its guaranteed gate threshold voltage range of -0.6 V to -1.6 V. At VGS = -2.5 V, the device delivers RDS(on) ≤ 0.175 Ω and supports -1.5 A drain current, making it fully enhanced and functional without level-shifting circuitry. This behavior is confirmed in the "Drain-Source On-State Resistance" specification table of the SI1471DH-T1-GE3 datasheet.
What is the thermal resistance from junction to ambient (RthJA) for SI1471DH-T1-GE3 on a standard evaluation board?
The SI1471DH-T1-GE3 exhibits a typical junction-to-ambient thermal resistance (RthJA) of 60 °C/W when mounted on a 1" × 1" FR4 board with standard copper coverage, as specified in the "Thermal Resistance Ratings" section of its datasheet. The maximum RthJA is 80 °C/W under the same conditions. This value reflects the benefit of its copper leadframe, which achieves ~36% lower RthJA compared to legacy Alloy 42 versions in identical packaging.
Can SI1471DH-T1-GE3 be used for reverse polarity protection in a 5 V system?
Yes, SI1471DH-T1-GE3 is suitable for reverse polarity protection in a 5 V system when configured as a high-side switch. With VDS = -30 V rating and body diode forward voltage VSD = -0.83 V at -2 A, it blocks reverse current while introducing minimal forward drop during normal operation. Its -2.7 A continuous rating accommodates typical 5 V USB loads, and the 0.120 Ω RDS(on) at -4.5 V ensures <220 mV conduction loss at full rated current - all verified in the SI1471DH-T1-GE3 product summary and specifications tables.
How does the four-drain-pin configuration of SI1471DH-T1-GE3 improve electrical performance?
The four-drain-pin configuration of SI1471DH-T1-GE3 reduces both on-resistance and thermal resistance by distributing current and heat across multiple PCB pads. Electrically, this lowers effective RDS(on) through parallel conduction paths; thermally, it cuts junction-to-foot resistance (RthJF) to 34 °C/W (typ.), improving power handling by over 2× versus single-drain equivalents. These benefits are intrinsic to the SOT-363 layout shown in the SI1471DH-T1-GE3 top-view diagram and validated in Vishay's AN815 thermal performance report.
SI1471DH-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- 6-TSSOP, SC-88, SOT-363
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 2.7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 2.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 100mOhm @ 2A, 10V
- Vgs(th) (Max) @ Id:
- 1.6V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 9.8 nC @ 4.5 V
- Vgs (Max):
- ±12V
- Input Capacitance (Ciss) (Max) @ Vds:
- 445 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1.5W (Ta), 2.78W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SC-70-6
SI1471DH-T1-GE3 FAQ
1.How can I place an order for SI1471DH-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI1471DH-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI1471DH-T1-GE3 reliable?
The price and inventory of SI1471DH-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI1471DH-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SI1471DH-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI1471DH-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI1471DH-T1-GE3?
SI1471DH-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI1471DH-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI1471DH-T1-GE3?
For technical support, including SI1471DH-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI1471DH-T1-GE3 requirements.
6.How does Aetrix verify that SI1471DH-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SI1471DH-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI1471DH-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SI1471DH-T1-GE3?
All SI1471DH-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI1471DH-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI1471DH-T1-GE3 part is unused and in its original packaging.
Return procedure for SI1471DH-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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