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Vishay Siliconix SI1473DH-T1-E3
- Part No.:
- SI1473DH-T1-E3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- 6-TSSOP, SC-88, SOT-363
- Datasheet:
-
SI1473DH-T1-E3.pdf
- Description:
- MOSFET P-CH 30V 2.7A SC70-6
- Quantity:
- Payment:
- Shipping:
Inventory:2,456
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Product details
Overview
SI1473DH-T1-E3 from Vishay Siliconix is a P-channel 30 V (D-S) TrenchFET® Power MOSFET in SOT-363 (SC-70-6) package, rated for -2.7 A continuous drain current at TC = 25 °C, with RDS(on) = 0.100 Ω at VGS = -10 V and 0.145 Ω at VGS = -4.5 V, optimized for load switching in portable devices.
For engineers reviewing the SI1473DH-T1-E3 datasheet, SI1473DH-T1-E3 pinout, SI1473DH-T1-E3 application, or SI1473DH-T1-E3 equivalent, this page delivers verified electrical parameters, thermal resistance values (RthJA = 60–80 °C/W), gate charge (Qg = 4.1 nC), body diode characteristics (VSD = -0.85 to -1.2 V), and SOT-363 terminal mapping - all confirmed from Vishay Document #74438 Rev. E.
Technical Context
This device uses trench-gate MOSFET architecture to achieve low on-resistance in a 6-pin SC-70 footprint, with four parallel drain terminals enabling enhanced thermal conduction and reduced RDS(on) versus standard 3-pin packages. Its gate threshold voltage (VGS(th) = -1 to -3 V) supports direct logic-level drive from 3.3 V or 5 V controllers.
The integrated source-drain body diode exhibits trr = 23–35 ns and Qrr = 15–23 nC, making it suitable for synchronous rectification and bidirectional load control. Junction-to-foot thermal resistance (RthJF = 34–45 °C/W) reflects copper leadframe construction, delivering superior power dissipation over Alloy 42 alternatives.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -30 V - Maximum drain-source blocking voltage; defines safe operating range in negative-rail switching applications. |
| RDS(on) | 0.100 Ω @ VGS = -10 V - Enables <100 mW conduction loss at -2 A, critical for battery-powered efficiency. |
| ID (Continuous) | -2.7 A @ TC = 25 °C - Package-limited current rating; derates to -2.3 A at TC = 70 °C per thermal constraints. |
| Qg | 4.1 nC (typ.) - Low gate charge reduces driver power and switching losses in high-frequency load control. |
| VGS(th) | -1 to -3 V - Ensures reliable turn-on with standard 3.3 V GPIO without level-shifting circuitry. |
| RthJA | 60–80 °C/W - Junction-to-ambient thermal resistance on FR4; dictates heatsinking requirements for sustained operation. |
| VSD | -0.85 to -1.2 V @ IS = -2 A - Forward voltage of intrinsic body diode; impacts reverse-current path losses in H-bridge or OR-ing. |
Pinout & Package
SOT-363 (SC-70-6) package with copper leadframe, 1.8–2.2 mm × 1.8–2.4 mm footprint, 0.9–1.1 mm height, and four parallel drain terminals for low-inductance, high-current routing and improved thermal transfer to PCB.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Drain | Primary high-current output node; electrically tied to pins 2, 4, and 5 for distributed current handling. |
| 2 | Drain | Secondary drain connection; shares same internal node as pin 1, reducing effective RDS(on) and thermal resistance. |
| 3 | Gate | Control input; requires ≤±20 V drive; threshold centered at -2 V for robust noise margin in portable systems. |
| 4 | Drain | Third drain terminal; enables symmetric PCB layout and lower parasitic inductance in compact layouts. |
| 5 | Drain | Fourth drain terminal; provides redundant current path and enhances thermal coupling to copper pour. |
| 6 | Source | Reference node for gate drive and load return; connects to system ground or negative rail in high-side switch configurations. |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® architecture | Delivers 0.100 Ω RDS(on) in SC-70-6, enabling higher current density than planar MOSFETs in same footprint. |
| Copper leadframe | Reduces RthJF to 34–45 °C/W - 4× improvement over Alloy 42 - supporting >1 W dissipation on minimal PCB area. |
| Halogen-free & RoHS-compliant | Meets IEC 61249-2-21 and Directive 2002/95/EC; suitable for consumer electronics with strict environmental compliance. |
| Low Qgd / Qgs ratio | Qgd = 1.7 nC, Qgs = 1.2 nC - fast, controllable switching with minimized Miller effect during turn-off transitions. |
| Body diode trr & Qrr | trr = 23–35 ns, Qrr = 15–23 nC - enables efficient reverse recovery in bidirectional load control and OR-ing circuits. |
Applications
| Smartphone Power Management | USB OTG Power Switching |
|---|---|
|
Use Scenario: Enabling/disabling VBUS power path between USB host and peripheral in dual-role devices. IC Role / Device Role / Timing Role: High-side load switch controlling 5 V rail with fast turn-on/turn-off (<100 ns rise/fall). Use Value: Low RDS(on) minimizes voltage drop across switch, preserving USB 2.0 voltage tolerance; compact SOT-363 fits tight board space. |
Use Scenario: Isolating battery-backed 3.3 V supply from USB VBUS during host mode to prevent backfeed. IC Role / Device Role / Timing Role: Reverse-polarity protection switch with body diode oriented to block VBUS-to-battery current. Use Value: VGS(th) = -2 V ensures full enhancement from 3.3 V GPIO; low Qg allows microcontroller-driven soft-start sequencing. |
| Wearable Sensor Hub Power Gating | Bluetooth Headset Battery Protection |
|
Use Scenario: Powering down inertial measurement units (IMUs) and ambient light sensors during sleep mode. IC Role / Device Role / Timing Role: Low-quiescent-load disconnect switch with <1 µA IDSS leakage at -30 V. Use Value: Ultra-low off-state leakage extends battery life; small size avoids interference with RF antenna layout. |
Use Scenario: Preventing deep discharge by disconnecting Li-ion cell from charging IC when voltage falls below 2.8 V. IC Role / Device Role / Timing Role: Over-discharge protection FET controlled by fuel gauge IC's enable signal. Use Value: RDS(on) = 0.145 Ω @ VGS = -4.5 V ensures <100 mW loss at 800 mA cutoff current; SOT-363 reflow-compatible. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel load switch applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si1471DH-T1-E3 | RDS(on) = 0.055 Ω @ VGS = -10 V (lower), ID = -3.8 A (higher), same SOT-363 package and pinout. | Better suited for higher-current loads (>3 A) where lower conduction loss justifies cost premium. | Select Si1471DH-T1-E3 if system requires <55 mΩ on-resistance and can support higher peak current capability. |
| DMN3026LSD-13 | 30 V P-channel, RDS(on) = 0.075 Ω @ VGS = -10 V, but in SuperSOT-6 (different pinout, non-drop-in). | Requires PCB redesign due to different terminal assignment (G/S/D vs D/D/G/D/D/S); no shared footprint. | Choose DMN3026LSD-13 only when thermal performance demands lower RDS(on) and layout revision is feasible. |
Compared with SI1473DH-T1-E3, Si1471DH-T1-E3 offers higher current and lower RDS(on) in identical packaging, while DMN3026LSD-13 delivers better on-resistance but mandates board-level changes - making SI1473DH-T1-E3 the optimal balance of performance, compatibility, and space-constrained design.
Availability
SI1473DH-T1-E3 is available at Aetrix Electronics and suitable for portable computing, wearable sensor hubs, and USB power delivery systems requiring stable component supply, Pb-free compliance, and long-term industrial availability.
Supply support for SI1473DH-T1-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors and passive components, specializing in high-reliability MOSFETs, diodes, and optoelectronics for demanding industrial and consumer applications.
The SI147x DH series targets ultra-compact, high-efficiency load switching in space-constrained portable electronics, leveraging copper leadframe SC-70-6 packaging to maximize power density and thermal performance.
FAQ
What is the maximum continuous drain current rating for SI1473DH-T1-E3 under typical PCB conditions?
The SI1473DH-T1-E3 is rated for -2.7 A continuous drain current at TC = 25 °C on a 1" × 1" FR4 board. At TC = 70 °C, the rating remains -2.7 A, but at TA = 25 °C it drops to -2.8 A (package-limited), and at TA = 70 °C to -2.3 A. Derating curves in Figure 5 of Document #74438 confirm linear reduction above 25 °C ambient.
Does SI1473DH-T1-E3 support 3.3 V logic-level gate drive?
Yes, SI1473DH-T1-E3 has a gate threshold voltage (VGS(th)) of -1 to -3 V, ensuring full enhancement with 3.3 V gate drive (VGS = -3.3 V). At VGS = -4.5 V, RDS(on) is 0.145 Ω - well within specification - making it compatible with standard 3.3 V microcontrollers without level shifters.
What is the thermal resistance from junction to ambient (RthJA) for SI1473DH-T1-E3, and how is it measured?
SI1473DH-T1-E3 has RthJA = 60 °C/W (typical) to 80 °C/W (maximum), measured on a 1" × 1" FR4 board with 1 oz copper. This value reflects steady-state conduction under t ≤ 5 s pulse conditions and assumes surface mounting per JEDEC standards - critical for estimating temperature rise in handheld device designs.
Can SI1473DH-T1-E3 be used for reverse polarity protection?
Yes, SI1473DH-T1-E3 is commonly used for reverse polarity protection in portable systems. With its P-channel configuration and source tied to the positive input rail, it blocks reverse current flow when the gate is held low. The body diode orientation (anode at source, cathode at drain) inherently supports this topology without external diodes.
Is SI1473DH-T1-E3 halogen-free and RoHS-compliant?
Yes, SI1473DH-T1-E3 is both halogen-free per IEC 61249-2-21 and compliant with RoHS Directive 2002/95/EC, as explicitly stated in the Vishay datasheet (Document #74438 Rev. E). The "-E3" suffix denotes lead-free and halogen-free construction, validated for consumer electronics manufacturing.
SI1473DH-T1-E3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- 6-TSSOP, SC-88, SOT-363
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 2.7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 100mOhm @ 2A, 10V
- Vgs(th) (Max) @ Id:
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 6.2 nC @ 4.5 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 365 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1.5W (Ta), 2.78W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SC-70-6
SI1473DH-T1-E3 FAQ
1.How can I place an order for SI1473DH-T1-E3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI1473DH-T1-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI1473DH-T1-E3 reliable?
The price and inventory of SI1473DH-T1-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI1473DH-T1-E3 is usually 5 days.
3.What payment methods are accepted for SI1473DH-T1-E3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI1473DH-T1-E3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI1473DH-T1-E3?
SI1473DH-T1-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI1473DH-T1-E3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI1473DH-T1-E3?
For technical support, including SI1473DH-T1-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI1473DH-T1-E3 requirements.
6.How does Aetrix verify that SI1473DH-T1-E3 is sourced from the original manufacturer or authorized distributors?
All SI1473DH-T1-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI1473DH-T1-E3 meets industry standards.
7.What is the process for return or replacement of SI1473DH-T1-E3?
All SI1473DH-T1-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SI1473DH-T1-E3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI1473DH-T1-E3 part is unused and in its original packaging.
Return procedure for SI1473DH-T1-E3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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