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Vishay Siliconix SI1473DH-T1-GE3
- Part No.:
- SI1473DH-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- 6-TSSOP, SC-88, SOT-363
- Datasheet:
-
SI1473DH-T1-GE3.pdf
- Description:
- MOSFET P-CH 30V 2.7A SC70-6
- Quantity:
- Payment:
- Shipping:
Inventory:4,826
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Product details
Overview
SI1473DH-T1-GE3 from Vishay Siliconix is a P-channel 30 V (D-S) TrenchFET® Power MOSFET in SOT-363 (SC-70, 6-lead) package, with RDS(on) = 0.100 Ω at VGS = −10 V and 0.145 Ω at VGS = −4.5 V, rated for −2.7 A continuous drain current, and optimized for low-voltage load switching in portable electronics.
For engineers reviewing the SI1473DH-T1-GE3 datasheet, SI1473DH-T1-GE3 pinout, SI1473DH-T1-GE3 application, or SI1473DH-T1-GE3 equivalent, this device serves as a halogen-free, RoHS-compliant discrete power switch where compact size, low gate charge (4.1 nC), and enhanced thermal performance via copper leadframe are critical selection criteria.
Technical Context
This P-channel MOSFET uses trench-gate silicon technology to achieve low on-resistance and fast switching. Its gate threshold voltage (VGS(th)) ranges from −1 V to −3 V, enabling reliable turn-on with standard logic-level drive down to −4.5 V.
The device features four parallel drain terminals and a single source terminal in its SOT-363 package, reducing both RDS(on) and junction-to-foot thermal resistance (RthJF = 34 °C/W typ.). Its body diode exhibits VSD = −0.85 V at −2 A and trr = 23 ns, supporting synchronous rectification and reverse recovery–sensitive topologies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | −30 V - Maximum drain-source blocking voltage; suitable for 24 V rail and battery-backed systems. |
| RDS(on) @ VGS = −10 V | 0.100 Ω - Enables <100 mW conduction loss at −2 A, critical for thermally constrained PCBs. |
| RDS(on) @ VGS = −4.5 V | 0.145 Ω - Ensures functional switching under typical Li-ion battery discharge (3.0–4.2 V). |
| Qg | 4.1 nC - Low total gate charge reduces driver power and enables high-frequency PWM control up to ~1 MHz. |
| ID (continuous) | −2.7 A - Package-limited current rating at TC = 25 °C; derates linearly above 25 °C case temperature. |
| RthJA | 60 °C/W (typ.) - Junction-to-ambient thermal resistance on 1" × 1" FR4; supports 1.5 W dissipation at 25 °C ambient. |
| VGS(th) | −1 to −3 V - Logic-compatible gate threshold ensures robust turn-on with 3.3 V or 5 V microcontroller GPIO. |
Pinout & Package
SOT-363 (SC-70, 6-lead) package with copper leadframe - provides improved thermal conductivity vs. Alloy 42, lower RthJF, and four integrated drain terminals for reduced parasitic inductance and on-resistance.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 4, 5 | Drain (D) | Four parallel drain connections - reduce effective RDS(on) and improve heat spreading into PCB copper. |
| 3 | Gate (G) | Control input; requires −4.5 V to −10 V for full enhancement; low Ciss = 365 pF eases drive requirements. |
| 6 | Source (S) | Reference node for gate drive and load return path; tied to system ground or negative rail in high-side switch configurations. |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® architecture | Delivers 0.100 Ω RDS(on) in ultra-small SOT-363 - enables space-constrained load switching without thermal compromise. |
| Copper leadframe construction | Reduces RthJF to 34 °C/W (typ.) - improves power handling by >2× vs. Alloy 42 equivalents and supports higher sustained current. |
| Halogen-free & RoHS-compliant | Meets IEC 61249-2-21 and Directive 2002/95/EC - satisfies environmental compliance for global consumer and medical end equipment. |
| Low Qg / Qgd ratio | Qgd = 1.7 nC of total Qg = 4.1 nC - yields low Miller effect and stable switching behavior in hard-switched DC-DC stages. |
| Body diode with fast trr | trr = 23 ns (typ.) - minimizes reverse recovery losses in buck converters and OR-ing applications. |
Applications
| Smartphone Power Management | USB-C Port Protection |
|---|---|
|
Use Scenario: Controlling power delivery to USB peripherals and accessory ports during hot-plug events and battery low-voltage conditions. IC Role / Device Role / Timing Role: High-side load switch managing VBUS enable/disable with controlled slew rate and overcurrent detection interface. Use Value: Low RDS(on) limits voltage drop across the switch, preserving USB 3.1 voltage margin; small footprint saves board area near edge connectors. |
Use Scenario: Isolating downstream circuits from upstream VBUS during fault conditions (e.g., short-to-battery, overvoltage). IC Role / Device Role / Timing Role: Reverse-polarity and overcurrent protection switch placed between USB-C receptacle and system PMIC. Use Value: Fast turn-off (tf = 15 ns typ. at −10 V drive) enables rapid fault isolation; halogen-free construction meets mobile OEM material declarations. |
| Wearable Battery Monitoring | Medical Sensor Node Power Gating |
|
Use Scenario: Enabling/disabling battery fuel gauge ICs and coulomb counters during sleep modes to eliminate quiescent leakage. IC Role / Device Role / Timing Role: Low-leakage P-channel switch inserted between battery and monitoring IC supply rail. Use Value: IDSS ≤ −1 µA at −30 V ensures sub-µA off-state current - extends shelf life and runtime in multi-year wearable deployments. |
Use Scenario: Powering clinical-grade analog front-ends (e.g., ECG, SpO₂) only during active measurement cycles to meet IEC 60601-1 leakage limits. IC Role / Device Role / Timing Role: Precision-controlled power gate driven by microcontroller GPIO with defined rise/fall timing. Use Value: Tight VGS(th) distribution (−1 to −3 V) guarantees consistent turn-on across temperature and process variation - avoids partial conduction states. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel load switch applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si1471DH-T1-GE3 | Same SOT-363 package, but N-channel; requires high-side gate driver or charge pump for high-side switching. | Not directly substitutable in high-side configuration without circuit redesign; better suited for low-side switching or H-bridge legs. | Select only if topology permits low-side placement and gate drive supports −10 V swing. |
| DMN2053LFG-7 | N-channel 20 V MOSFET in SOT-23-3; RDS(on) = 0.055 Ω @ −4.5 V, but lacks integrated multiple drains and has higher RthJA (175 °C/W). | Requires external level-shifting for high-side use; less thermally robust in sustained 2 A operation on compact PCBs. | Consider only for cost-sensitive, low-duty-cycle applications where thermal headroom exceeds 50 °C/W. |
Compared with SI1473DH-T1-GE3, Si1471DH-T1-GE3 shifts implementation complexity to gate drive design, while DMN2053LFG-7 trades package-level thermal advantage for lower RDS(on) but sacrifices reliability under continuous load in space-constrained layouts.
Availability
SI1473DH-T1-GE3 is available at Aetrix Electronics and suitable for smartphone power management, USB-C port protection, wearable battery monitoring, and medical sensor node power gating requiring stable component supply and long-term industrial availability.
Supply support for SI1473DH-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors and passive components, specializing in high-reliability MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.
The SI1473DH-T1-GE3 belongs to Vishay's LITTLE FOOT® SC-70 family - engineered specifically for miniaturized, high-density portable electronics where thermal efficiency and environmental compliance are non-negotiable.
FAQ
What is the maximum continuous drain current rating for SI1473DH-T1-GE3 at 70 °C case temperature?
The SI1473DH-T1-GE3 is rated for −2.7 A continuous drain current at TC = 70 °C, as specified in the Absolute Maximum Ratings table. This value reflects package thermal limitation-not silicon capability-and remains constant from 25 °C to 70 °C case temperature before linear derating begins above 70 °C.
Does SI1473DH-T1-GE3 support logic-level gate drive from a 3.3 V microcontroller?
Yes, SI1473DH-T1-GE3 supports logic-level drive: its VGS(th) range is −1 V to −3 V, and it delivers RDS(on) = 0.145 Ω at VGS = −4.5 V. While full enhancement occurs at −4.5 V, many 3.3 V GPIOs can sink sufficient current to pull the gate below −3 V when used with appropriate pull-down resistors and layout-confirm with actual board-level testing.
How does the copper leadframe in SI1473DH-T1-GE3 improve thermal performance versus standard Alloy 42 packages?
The copper leadframe in SI1473DH-T1-GE3 reduces RthJF to 34 °C/W (typ.), compared to ~163 °C/W for Alloy 42 versions-a 4× improvement. This allows higher sustained power dissipation: at TA = 25 °C, SI1473DH-T1-GE3 achieves 1.5 W (vs. ~0.4 W for Alloy 42), directly extending operational lifetime in thermally dense portable designs.
Can SI1473DH-T1-GE3 be used in reverse polarity protection circuits?
Yes, SI1473DH-T1-GE3 is commonly deployed in reverse polarity protection due to its P-channel topology and low RDS(on). When placed between input and load with source tied to input and drain to load, it blocks reverse voltage while conducting forward current with minimal drop-VSD = −0.85 V at −2 A confirms low body diode forward voltage for fail-safe operation.
What is the gate charge profile of SI1473DH-T1-GE3, and how does it affect switching efficiency?
SI1473DH-T1-GE3 has Qg = 4.1 nC (typ.) at VGS = −4.5 V, with Qgs = 1.2 nC and Qgd = 1.7 nC. This low, well-balanced charge profile minimizes driver power loss and enables clean, fast transitions (tr = 60 ns typ. at −4.5 V), reducing switching losses in PWM-based load control up to several hundred kHz.
SI1473DH-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- 6-TSSOP, SC-88, SOT-363
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 2.7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 100mOhm @ 2A, 10V
- Vgs(th) (Max) @ Id:
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 6.2 nC @ 4.5 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 365 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1.5W (Ta), 2.78W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SC-70-6
SI1473DH-T1-GE3 FAQ
1.How can I place an order for SI1473DH-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI1473DH-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI1473DH-T1-GE3 reliable?
The price and inventory of SI1473DH-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI1473DH-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SI1473DH-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI1473DH-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI1473DH-T1-GE3?
SI1473DH-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI1473DH-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI1473DH-T1-GE3?
For technical support, including SI1473DH-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI1473DH-T1-GE3 requirements.
6.How does Aetrix verify that SI1473DH-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SI1473DH-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI1473DH-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SI1473DH-T1-GE3?
All SI1473DH-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI1473DH-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI1473DH-T1-GE3 part is unused and in its original packaging.
Return procedure for SI1473DH-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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