Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI1480BDH-T1-GE3

Name: SI1480BDH-T1-GE3
Brand: Vishay Siliconix
SKU: SI1480BDH-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: SI1480BDH-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: 6-TSSOP, SC-88, SOT-363

Datasheet:: SI1480BDH-T1-GE3.pdf

Description:: N-CHNNEL 100-V (D-S) MOSFET SC70

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:11,620

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

SI1480BDH-T1-GE3 from Vishay Siliconix is an N-channel 100 V, 2.38 A (T_C = 25 °C) TrenchFET® Gen IV MOSFET in SOT-363 (SC-70-6) package, with R_DS(on) = 0.212 Ω at V_GS = 10 V and 0.270 Ω at V_GS = 4.5 V, optimized for low-power load switching and DC/DC converter high-side control.

For engineers reviewing the SI1480BDH-T1-GE3 datasheet, SI1480BDH-T1-GE3 pinout, SI1480BDH-T1-GE3 application, or SI1480BDH-T1-GE3 equivalent, this page delivers verified electrical specs, thermal performance data, validated SOT-363 terminal mapping, and real-world use context for power management and LED backlighting designs.

Technical Context

This device employs a trench-gate silicon process enabling stable R_DS(on) over temperature and fast switching with Q_g = 1.86 nC (V_GS = 4.5 V), supporting efficient operation in 4.5 V–10 V gate drive systems. Its 100 % R_g and UIS tested construction ensures robustness against voltage transients and gate resistance consistency.

The integrated body diode exhibits V_SD = 0.85 V (typ.) at I_S = 2 A and Q_rr = 22 nC (typ.), making it suitable for synchronous rectification and freewheeling paths where controlled reverse recovery is required.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - supports input rails up to 48 V nominal with margin for transient spikes in industrial and automotive power supplies
R_DS(on) @ 10 V	0.212 Ω max - enables ≤0.95 W conduction loss at 2 A continuous drain current under full gate drive
R_DS(on) @ 4.5 V	0.270 Ω max - ensures reliable turn-on with 3.3 V or 5 V logic-level microcontrollers without gate boosting
Q_g	1.86 nC typ. @ 4.5 V - allows <10 ns turn-on delay and <25 ns rise time with 1 Ω gate resistor, minimizing switching losses
I_D (T_C = 25 °C)	2.38 A - defines maximum continuous current capability when mounted on thermally adequate PCB copper area
R_thJA	62 °C/W typical - sets thermal limit of ~1.5 W dissipation in standard FR4 layout before junction exceeds 150 °C
V_GS(th)	1.6–3.0 V - guarantees enhancement-mode behavior with clear turn-on threshold across temperature and process variation

Pinout & Package

SOT-363 (SC-70-6) surface-mount package with exposed drain pad for thermal enhancement; 1.3 mm × 2.1 mm footprint, 0.95 mm height, lead (Pb)-free and halogen-free per JEDEC J-STD-020.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 4, 6	Drain (D)	Common high-current output node; pins 1/2/4/6 are internally bonded to same drain metallization and must be connected to same net
3	Gate (G)	Control input; requires low-impedance drive due to 0.5–3.5 Ω gate resistance and 206 pF C_iss
5	Source (S)	Reference node for gate drive and current return path; connects to ground or low-side switch node

Key Features

Feature	Design Value
TrenchFET® Gen IV process	Delivers lower R_DS(on) × Q_g figure-of-merit than prior generations, improving efficiency in 1–5 MHz DC/DC topologies
100 % R_g and UIS tested	Ensures gate integrity and avalanche ruggedness-critical for unclamped inductive switching in load-switch applications
Low Q_gd/Q_gs ratio (0.5/0.93 nC)	Reduces Miller effect, enabling stable operation with minimal gate oscillation even under high dV/dt conditions
Body diode Q_rr = 22 nC	Supports soft-recovery behavior in flyback and buck-boost converters, lowering EMI and reducing snubber requirements

Applications

Load Switching	DC/DC Converter High-Side
Use Scenario: Power sequencing and fault-isolated enable/disable of peripheral rails (e.g., USB-C port power, sensor bias, display backlight). IC Role / Device Role / Timing Role: Low-side or high-side discrete switch controlling 3.3 V–24 V loads up to 2 A with fast turn-on (<12 ns) and low quiescent current. Use Value: Enables clean power-up/down transitions with <1 μA gate leakage and no external driver needed for 3.3 V MCU GPIO control.	Use Scenario: High-side switch in non-synchronous buck regulators or boost converters operating at 500 kHz–2 MHz. IC Role / Device Role / Timing Role: Main power switch handling 100 V breakdown and 2.38 A continuous current with minimal conduction and switching loss. Use Value: Achieves >92 % efficiency at 1 A output with R_DS(on) = 0.212 Ω and Q_g = 1.86 nC, reducing thermal derating needs.
LED Backlight Control	Power Management IC Auxiliary Switch
Use Scenario: Constant-current dimming control for white LED strings in portable displays and automotive instrument clusters. IC Role / Device Role / Timing Role: PWM-controlled current sink or source switch operating at 1–20 kHz with tight duty-cycle fidelity. Use Value: Maintains linear dimming response with <25 ns rise/fall times and negligible gate charge-induced timing skew.	Use Scenario: External enable switch for PMIC LDOs or DC/DC controllers requiring independent power domain control. IC Role / Device Role / Timing Role: Standby isolation switch placed between input supply and PMIC VIN pin to reduce system standby current. Use Value: Limits shutdown current to <1 μA via V_GS(th)-guaranteed cutoff, extending battery life in always-on IoT nodes.

Load Switching

DC/DC Converter High-Side

Use Scenario: Power sequencing and fault-isolated enable/disable of peripheral rails (e.g., USB-C port power, sensor bias, display backlight).

IC Role / Device Role / Timing Role: Low-side or high-side discrete switch controlling 3.3 V–24 V loads up to 2 A with fast turn-on (<12 ns) and low quiescent current.

Use Value: Enables clean power-up/down transitions with <1 μA gate leakage and no external driver needed for 3.3 V MCU GPIO control.

Use Scenario: High-side switch in non-synchronous buck regulators or boost converters operating at 500 kHz–2 MHz.

IC Role / Device Role / Timing Role: Main power switch handling 100 V breakdown and 2.38 A continuous current with minimal conduction and switching loss.

Use Value: Achieves >92 % efficiency at 1 A output with R_DS(on) = 0.212 Ω and Q_g = 1.86 nC, reducing thermal derating needs.

LED Backlight Control

Power Management IC Auxiliary Switch

Use Scenario: Constant-current dimming control for white LED strings in portable displays and automotive instrument clusters.

IC Role / Device Role / Timing Role: PWM-controlled current sink or source switch operating at 1–20 kHz with tight duty-cycle fidelity.

Use Value: Maintains linear dimming response with <25 ns rise/fall times and negligible gate charge-induced timing skew.

Use Scenario: External enable switch for PMIC LDOs or DC/DC controllers requiring independent power domain control.

IC Role / Device Role / Timing Role: Standby isolation switch placed between input supply and PMIC VIN pin to reduce system standby current.

Use Value: Limits shutdown current to <1 μA via V_GS(th)-guaranteed cutoff, extending battery life in always-on IoT nodes.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN2053UVT-7	R_DS(on) = 0.25 Ω @ 4.5 V; higher Q_g = 2.5 nC; same SOT-363 package	Slightly higher conduction loss and slower switching; less suitable for >1 MHz operation	Acceptable alternative if board layout accommodates 0.04 Ω higher R_DS(on) and thermal margin exists
AO3414	R_DS(on) = 0.055 Ω @ 4.5 V but only rated to 40 V V_DS; larger SOT-23 package	Not usable in 100 V systems; incompatible pinout and voltage rating	Only viable in sub-40 V applications where lower R_DS(on) justifies redesign and voltage derating

Compared with DMN2053UVT-7 and AO3414, the SI1480BDH-T1-GE3 uniquely balances 100 V rating, logic-level gate drive, and compact SOT-363 footprint-making it optimal for space-constrained, medium-voltage power switches where both voltage margin and thermal efficiency matter.

Availability

SI1480BDH-T1-GE3 is available at Aetrix Electronics and suitable for load switching, DC/DC converter high-side control, and LED backlighting applications requiring stable component supply, consistent parametric performance, and long-term industrial availability.

Supply support for SI1480BDH-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on reliability, thermal efficiency, and application-specific optimization.

The SI1480BDH-T1-GE3 belongs to Vishay's TrenchFET® Gen IV family, engineered for high-efficiency, low-voltage-drop power switching in space-constrained consumer, industrial, and automotive subsystems.

FAQ

What is the maximum continuous drain current for SI1480BDH-T1-GE3 at 70 °C case temperature?

The SI1480BDH-T1-GE3 supports 1.9 A continuous drain current at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the SOT-363 package under sustained power dissipation; actual usable current depends on PCB copper area and ambient airflow. The SI1480BDH-T1-GE3 maintains R_DS(on) stability across this range due to its TrenchFET® Gen IV process.

Does SI1480BDH-T1-GE3 require a gate driver when driven by a 3.3 V microcontroller?

No, the SI1480BDH-T1-GE3 does not require an external gate driver when driven by a 3.3 V microcontroller. Its V_GS(th) range (1.6–3.0 V) and R_DS(on) = 0.270 Ω max at V_GS = 4.5 V ensure full enhancement at 3.3 V logic levels. The SI1480BDH-T1-GE3 achieves usable on-resistance and fast switching (t_r = 25 ns typ.) directly from GPIO, eliminating driver complexity in low-power systems.

What is the thermal resistance from junction to ambient (R_thJA) for SI1480BDH-T1-GE3 on standard FR4?

The SI1480BDH-T1-GE3 has a typical R_thJA of 62 °C/W and maximum of 82 °C/W when mounted on a 1" × 1" FR4 board per test condition b. This value assumes standard JEDEC 51-7 layout; adding thermal vias under the drain pad reduces R_thJA by ~15–20 %. The SI1480BDH-T1-GE3's thermal performance enables 1.5 W dissipation before reaching 150 °C junction temperature at 25 °C ambient.

Is SI1480BDH-T1-GE3 suitable for avalanche energy handling in inductive load switching?

Yes, the SI1480BDH-T1-GE3 is 100 % UIS (unclamped inductive switching) tested and rated for repetitive avalanche energy E_AS = 0.45 mJ. It supports I_AS = 3 A avalanche current with L = 0.1 mH, making it suitable for driving solenoids, relays, and motor phases where inductive kickback occurs. The SI1480BDH-T1-GE3's ruggedness eliminates need for external clamping diodes in many medium-energy load-switch designs.

What is the body diode forward voltage (V_SD) of SI1480BDH-T1-GE3 at 2 A source current?

The SI1480BDH-T1-GE3 exhibits a typical body diode forward voltage V_SD of 0.85 V at I_S = 2 A and V_GS = 0 V, with a maximum of 1.2 V. This low V_SD minimizes conduction loss during freewheeling in buck converters and improves efficiency in synchronous rectifier configurations. The SI1480BDH-T1-GE3's body diode also features Q_rr = 22 nC (typ.), supporting controlled reverse recovery.

SI1480BDH-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: 6-TSSOP, SC-88, SOT-363

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 1.8A (Ta), 2.38A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 212mOhm @ 2A, 10V

Vgs(th) (Max) @ Id:: 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 6 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 206 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 1.5W (Ta), 2.6W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SC-70-6

SI1480BDH-T1-GE3 FAQ

1.How can I place an order for SI1480BDH-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI1480BDH-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI1480BDH-T1-GE3 reliable?

The price and inventory of SI1480BDH-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI1480BDH-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SI1480BDH-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI1480BDH-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI1480BDH-T1-GE3?

SI1480BDH-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI1480BDH-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI1480BDH-T1-GE3?

For technical support, including SI1480BDH-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI1480BDH-T1-GE3 requirements.

6.How does Aetrix verify that SI1480BDH-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SI1480BDH-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI1480BDH-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SI1480BDH-T1-GE3?

All SI1480BDH-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI1480BDH-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI1480BDH-T1-GE3 part is unused and in its original packaging.

Return procedure for SI1480BDH-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-11 Comparator Circuit: Voltage Thresholds, Op-Amp Differences, LM393 and Practical Design

Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.

2026-09-10 Schmitt Trigger Explained: Hysteresis, Circuits, Inverters and Applications

Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…

2026-09-09 Counterfeit Electronic Components: How to Detect, Authenticate, and Test Suspect Parts

Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

PRODUCT

PHONE

USER

Comparison List

Clear All