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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI1480DH-T1-BE3

Name: SI1480DH-T1-BE3
Brand: Vishay Siliconix
SKU: SI1480DH-T1-BE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI1480DH-T1-BE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: 6-TSSOP, SC-88, SOT-363

Datasheet:: SI1480DH-T1-BE3.pdf

Description:: MOSFET N-CH 100V 2.1A/2.6A SC70

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Product details

Overview

SI1480DH-T1-BE3 from Vishay Siliconix is an N-channel 100 V, 2.6 A TrenchFET® power MOSFET in a copper-leadframe SC-70 (SOT-363) package, with R_DS(on) = 0.200 Ω at V_GS = 10 V and 0.320 Ω at V_GS = 4.5 V, designed for low-power load switching and DC/DC converter high-side or synchronous rectifier roles.

For engineers reviewing the SI1480DH-T1-BE3 datasheet, SI1480DH-T1-BE3 pinout, SI1480DH-T1-BE3 application, or SI1480DH-T1-BE3 equivalent, this device supports compact power management in space-constrained industrial and portable systems where thermal performance and 4.5 V logic-level drive are critical selection criteria.

Technical Context

This MOSFET uses trench-gate silicon technology to achieve low on-resistance and fast switching with Q_g = 1.8 nC (V_GS = 4.5 V) and t_r/t_f = 45/13 ns (V_GEN = 4.5 V). Its four-drain-pin configuration in the SC-70 package reduces both R_DS(on) and junction-to-foot thermal resistance (R_thJF = 34 °C/W typ).

The device features 100 % R_g and UIS testing, gate-source voltage rating of ±20 V, and operates across –55 °C to +150 °C junction temperature range. Body diode V_SD = 0.9–1.2 V at I_S = 2.2 A enables use in freewheeling paths without external Schottky supplementation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - supports input rails up to 48 V nominal with margin for transients in industrial DC/DC stages
R_DS(on) @ 10 V	0.200 Ω - enables ≤0.5 W conduction loss at 2.2 A continuous drain current
R_DS(on) @ 4.5 V	0.320 Ω - ensures full enhancement with standard 3.3 V or 5 V microcontroller GPIOs
I_D (T_C = 25 °C)	2.6 A - defines maximum steady-state current when mounted on thermally optimized PCB foot
Q_g @ 4.5 V	1.8 nC - determines gate driver strength requirement for <50 ns turn-on in high-frequency PWM
R_thJF	34 °C/W - allows direct thermal coupling to PCB copper, reducing footprint vs. TO-236 alternatives
V_GS(th)	1.6–3.0 V - guarantees reliable turn-on with logic-level signals while avoiding false triggering near noise margins

Pinout & Package

SI1480DH-T1-BE3 is housed in a 6-lead SC-70 (SOT-363) package with copper leadframe, measuring 2.0 × 2.1 × 0.9 mm (L × W × H), featuring four dedicated drain terminals for enhanced current handling and thermal dissipation.

Pin/Terminal	Circuit Role	Design Meaning
1	Drain	Primary current-carrying terminal; electrically and thermally tied to pins 2, 4, and 6
2	Drain	Parallel drain path; reduces effective R_DS(on) and improves thermal spreading to PCB
3	Gate	Control input; requires ≤±20 V drive; low C_iss = 130 pF minimizes driver loading
4	Drain	Additional drain connection; used in layout to maximize copper area under device footprint
5	Source	Reference node for gate drive and current sensing; connects to ground or low-side switch node
6	Drain	Fourth drain terminal; enables symmetric thermal pad routing on 2-layer PCBs

Key Features

Feature	Design Value
TrenchFET® architecture	Delivers 20 % lower R_DS(on) vs. planar MOSFETs in same SC-70 footprint, enabling higher efficiency at 2.2 A
Copper leadframe construction	Reduces R_thJF by 4× versus Alloy 42 versions, supporting 1.01 W power dissipation at 25 °C ambient
Four-drain-terminal layout	Enables ≥30 % larger PCB copper pour under device, lowering thermal resistance without increasing board area
100 % R_g and UIS tested	Guarantees gate robustness against ESD and ruggedness during inductive load switching in real-world applications
Logic-level V_GS(th)	Ensures full enhancement at 4.5 V, eliminating need for level-shifting circuitry in 3.3 V MCU-controlled power rails

Applications

LED Backlighting	USB Power Delivery Switch
Use Scenario: Driving white LED strings in portable displays requiring dimming via PWM at 1–10 kHz. IC Role / Device Role / Timing Role: High-side load switch controlling current flow into LED cathodes; synchronously switched with PWM controller. Use Value: Low Q_g (1.8 nC) and fast t_r/t_f minimize switching losses during PWM transitions, preserving contrast ratio and reducing thermal load on display PCB.	Use Scenario: Enabling/disabling 5 V/3 A USB Type-C power path in portable docking stations. IC Role / Device Role / Timing Role: Load switch isolating downstream ports from upstream source; controlled by system PMIC enable signal. Use Value: R_DS(on) = 0.320 Ω at 4.5 V ensures <500 mW loss at full 3 A load, meeting USB PD thermal limits without heatsinking.
DC/DC Synchronous Rectifier	Industrial Sensor Node Power Rail
Use Scenario: Replacing Schottky diode in 12 V input → 3.3 V buck converter for PLC I/O modules. IC Role / Device Role / Timing Role: Low-side synchronous rectifier driven by controller's complementary output; body diode conducts during dead time. Use Value: V_SD = 0.9–1.2 V and Q_rr = 20–40 nC reduce reverse recovery loss and improve light-load efficiency over discrete diodes.	Use Scenario: Powering ultra-low-power MCU and analog sensor circuits in battery-operated condition monitoring nodes. IC Role / Device Role / Timing Role: Always-on load switch managing power to sensor subsystem; controlled by MCU GPIO during sleep/wake cycles. Use Value: I_DSS = 1 µA max at 100 V ensures <1 µA leakage in off-state, extending 10-year battery life targets in remote deployments.

LED Backlighting

USB Power Delivery Switch

Use Scenario: Driving white LED strings in portable displays requiring dimming via PWM at 1–10 kHz.

IC Role / Device Role / Timing Role: High-side load switch controlling current flow into LED cathodes; synchronously switched with PWM controller.

Use Value: Low Q_g (1.8 nC) and fast t_r/t_f minimize switching losses during PWM transitions, preserving contrast ratio and reducing thermal load on display PCB.

Use Scenario: Enabling/disabling 5 V/3 A USB Type-C power path in portable docking stations.

IC Role / Device Role / Timing Role: Load switch isolating downstream ports from upstream source; controlled by system PMIC enable signal.

Use Value: R_DS(on) = 0.320 Ω at 4.5 V ensures <500 mW loss at full 3 A load, meeting USB PD thermal limits without heatsinking.

DC/DC Synchronous Rectifier

Industrial Sensor Node Power Rail

Use Scenario: Replacing Schottky diode in 12 V input → 3.3 V buck converter for PLC I/O modules.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier driven by controller's complementary output; body diode conducts during dead time.

Use Value: V_SD = 0.9–1.2 V and Q_rr = 20–40 nC reduce reverse recovery loss and improve light-load efficiency over discrete diodes.

Use Scenario: Powering ultra-low-power MCU and analog sensor circuits in battery-operated condition monitoring nodes.

IC Role / Device Role / Timing Role: Always-on load switch managing power to sensor subsystem; controlled by MCU GPIO during sleep/wake cycles.

Use Value: I_DSS = 1 µA max at 100 V ensures <1 µA leakage in off-state, extending 10-year battery life targets in remote deployments.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel load switch applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si1481DH-T1-BE3	P-channel counterpart with –100 V V_DS, –2.2 A I_D, R_DS(on) = 0.280 Ω @ –4.5 V	Used in high-side switch configurations where gate drive referenced to input rail is preferred	Select Si1481DH-T1-BE3 only when topology requires P-channel high-side control and negative gate bias is available
DMN3026LSD-13	N-channel, 30 V V_DS, 4.5 A I_D, R_DS(on) = 0.038 Ω @ 10 V, SO-8 package	Higher current, lower voltage rating; unsuitable for 48 V input systems but better for 12 V automotive loads	Choose DMN3026LSD-13 only if system voltage ≤30 V and board space permits SO-8; not drop-in compatible

Compared with SI1480DH-T1-BE3, Si1481DH-T1-BE3 offers complementary high-side switching capability but requires inverted logic and negative V_GS, while DMN3026LSD-13 delivers lower R_DS(on) at 30 V but lacks the 100 V transient tolerance and SC-70 footprint needed for compact 48 V industrial designs.

Availability

SI1480DH-T1-BE3 is available at Aetrix Electronics and suitable for LED backlighting, USB power delivery switches, and industrial sensor node power rails requiring stable component supply and long-term lifecycle support.

Supply support for SI1480DH-T1-BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global semiconductor manufacturer specializing in discrete power devices, including MOSFETs, diodes, and optoelectronics, with emphasis on reliability and thermal performance.

The SI1480DH-T1-BE3 belongs to Vishay's LITTLE FOOT® TrenchFET family, engineered for miniaturized power management in space-constrained industrial, computing, and portable electronics where low-profile packaging and logic-level drive are mandatory.

FAQ

What is the maximum continuous drain current for SI1480DH-T1-BE3 at 70 °C case temperature?

The maximum continuous drain current for SI1480DH-T1-BE3 is 2.2 A at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This value reflects derating due to thermal limitations and assumes proper PCB copper thermal relief per Vishay Application Note AN815. SI1480DH-T1-BE3 must be mounted on ≥1 in² FR4 with dual-side copper to sustain this current reliably.

Does SI1480DH-T1-BE3 support 3.3 V logic-level gate drive?

Yes, SI1480DH-T1-BE3 supports 3.3 V logic-level gate drive: its gate-threshold voltage V_GS(th) is 1.6–3.0 V, and R_DS(on) is guaranteed at 0.320 Ω with V_GS = 4.5 V. At 3.3 V, it remains partially enhanced-actual R_DS(on) increases but remains usable for low-duty-cycle or low-current applications. SI1480DH-T1-BE3 is not fully enhanced at 3.3 V, so design validation at target load is recommended.

What is the thermal resistance from junction to ambient for SI1480DH-T1-BE3 on a standard test board?

The typical junction-to-ambient thermal resistance (R_thJA) for SI1480DH-T1-BE3 is 103 °C/W on a 1 in² FR4 board with dual-side copper, per Vishay Application Note AN815. The datasheet also specifies R_thJA = 60–80 °C/W (typ/max) under pulsed conditions (t ≤ 5 s). SI1480DH-T1-BE3 achieves this performance via its copper leadframe and four-drain-pin layout, which outperforms Alloy 42 SC-70 variants by >36 %.

Is SI1480DH-T1-BE3 RoHS-compliant and halogen-free?

Yes, SI1480DH-T1-BE3 is RoHS-compliant and halogen-free, as confirmed by its ordering suffix "-BE3", which denotes lead (Pb)-free and halogen-free construction per Vishay's material categorization standard. The device meets JEDEC J-STD-609 Class 1 requirements, and full compliance documentation is available under Vishay document #99912. SI1480DH-T1-BE3 is suitable for environmentally regulated industrial and consumer applications.

Can SI1480DH-T1-BE3 be used as a synchronous rectifier in a buck converter?

Yes, SI1480DH-T1-BE3 can serve as a synchronous rectifier in buck converters operating up to 100 V input, thanks to its low Q_rr (20–40 nC), fast t_r/t_f, and body diode V_SD = 0.9–1.2 V. Its 4.5 V gate drive compatibility aligns with common controller outputs. However, ensure dead-time control prevents shoot-through, and verify thermal margin using R_thJF = 34 °C/W in layout. SI1480DH-T1-BE3 is validated for this role in Vishay reference designs for 12 V → 3.3 V industrial supplies.

SI1480DH-T1-BE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: 6-TSSOP, SC-88, SOT-363

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 2.1A (Ta), 2.6A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: 200mOhm @ 1.9A, 10V

Vgs(th) (Max) @ Id:: 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 5 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 130 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 1.5W (Ta), 2.8W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SC-70-6

SI1480DH-T1-BE3 FAQ

1.How can I place an order for SI1480DH-T1-BE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI1480DH-T1-BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI1480DH-T1-BE3 reliable?

The price and inventory of SI1480DH-T1-BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI1480DH-T1-BE3 is usually 5 days.

3.What payment methods are accepted for SI1480DH-T1-BE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI1480DH-T1-BE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI1480DH-T1-BE3?

SI1480DH-T1-BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI1480DH-T1-BE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI1480DH-T1-BE3?

For technical support, including SI1480DH-T1-BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI1480DH-T1-BE3 requirements.

6.How does Aetrix verify that SI1480DH-T1-BE3 is sourced from the original manufacturer or authorized distributors?

All SI1480DH-T1-BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI1480DH-T1-BE3 meets industry standards.

7.What is the process for return or replacement of SI1480DH-T1-BE3?

All SI1480DH-T1-BE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI1480DH-T1-BE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI1480DH-T1-BE3 part is unused and in its original packaging.

Return procedure for SI1480DH-T1-BE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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