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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI1480DH-T1-GE3

Name: SI1480DH-T1-GE3
Brand: Vishay Siliconix
SKU: SI1480DH-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI1480DH-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: 6-TSSOP, SC-88, SOT-363

Datasheet:: SI1480DH-T1-GE3.pdf

Description:: MOSFET N-CH 100V 2.6A SC70-6

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Product details

Overview

SI1480DH-T1-GE3 from Vishay Siliconix is an N-channel 100 V TrenchFET® power MOSFET in a copper-leadframe SOT-363 (SC-70) package, rated for 2.6 A continuous drain current at T_C = 25 °C, with R_DS(on) = 0.200 Ω at V_GS = 10 V and 0.320 Ω at V_GS = 4.5 V, used as a load switch in compact DC/DC converters and LED backlighting circuits.

For engineers reviewing the SI1480DH-T1-GE3 datasheet, SI1480DH-T1-GE3 pinout, SI1480DH-T1-GE3 application, or SI1480DH-T1-GE3 equivalent, this page delivers verified device identity, thermal performance data, gate charge values (Q_g = 3.3 nC @ 10 V), body diode characteristics (V_SD = 0.9–1.2 V), and validated alternative parts for space-constrained power management designs.

Technical Context

This MOSFET employs trench-gate silicon technology optimized for low R_DS(on) and fast switching in high-efficiency, low-power applications. Its four-drain-pin configuration in the SOT-363 package reduces both on-resistance and junction-to-foot thermal resistance (R_thJF = 34 °C/W typical).

The device features 100 % R_g and UIS testing, operates across -55 to +150 °C junction temperature range, and supports logic-level drive with V_GS(th) = 1.6–3.0 V, enabling direct interface with 3.3 V and 5 V controllers without level-shifting.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - Withstands up to 100 V drain-source voltage, suitable for 48 V bus and industrial input rails.
R_DS(on) @ 10 V	0.200 Ω max - Enables <1 W conduction loss at 2.2 A, critical for thermally constrained PCBs.
R_DS(on) @ 4.5 V	0.320 Ω max - Supports direct drive from 3.3 V microcontrollers in battery-powered systems.
Q_g	3.3 nC typ @ 10 V - Low gate charge enables efficient 1–2 MHz switching in synchronous buck stages.
I_D (cont.)	2.6 A @ T_C = 25 °C - Continuous current rating defined at case temperature, not ambient.
R_thJF	34 °C/W typical - Junction-to-foot thermal resistance confirms effective heat transfer via four drain leads.
V_SD	0.9–1.2 V @ I_S = 2.2 A - Forward voltage of integrated body diode impacts reverse recovery losses in flyback or synchronous rectification.

Pinout & Package

SOT-363 (SC-70) 6-lead package with copper leadframe, featuring four dedicated drain terminals (Pins 1, 2, 4, 6), one gate (Pin 3), and one source (Pin 5), optimized for low thermal resistance and reduced R_DS(on).

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 4, 6	Drain (D)	Four parallel drain connections reduce package inductance and improve thermal dissipation to PCB copper.
3	Gate (G)	Control terminal requiring ≤ ±20 V gate-source voltage; threshold 1.6–3.0 V enables 3.3 V logic compatibility.
5	Source (S)	Reference node for gate drive and current sensing; tied to system ground or low-side return path.

Key Features

Feature	Design Value
TrenchFET® architecture	Delivers industry-leading R_DS(on) × area efficiency in SC-70 footprint, reducing board space vs. SO-8 alternatives.
Copper leadframe	Lowers R_thJF by 4× versus Alloy 42 (34 vs. 163 °C/W), enabling >1 W power handling on minimal PCB copper.
100 % R_g and UIS tested	Ensures gate robustness against transient overvoltage and ruggedness under unclamped inductive switching stress.
Lead (Pb)-free and Halogen-free	Meets RoHS Directive 2011/65/EU and JEDEC JS709B, supporting environmentally compliant manufacturing.
Logic-level gate drive	Operates fully enhanced with V_GS ≥ 4.5 V, eliminating need for external gate drivers in low-voltage control systems.

Applications

LED Backlighting	USB Power Delivery Switch
Use Scenario: Driving white LED strings in portable displays using PWM dimming at 1–5 kHz. IC Role / Device Role / Timing Role: Low-side load switch controlling current path to LED cathodes; requires fast turn-on/off to minimize dimming artifacts. Use Value: R_DS(on) = 0.320 Ω @ 4.5 V ensures <150 mW conduction loss at 2.2 A, while Q_g = 1.8 nC @ 4.5 V enables clean 5 kHz switching edges.	Use Scenario: Enabling/disabling 5–20 V power paths in USB-C PD sink applications with strict inrush control. IC Role / Device Role / Timing Role: High-side or low-side power switch managing V_BUS connection; must withstand 100 V transients per USB PD spec. Use Value: 100 V V_DS rating and 100 % UIS testing provide margin against ESD and hot-swap surges without external clamping.
DC/DC Converter Synchronous Rectifier	Industrial Sensor Power Gate
Use Scenario: Replacing Schottky diode in 12 V input, 3.3 V output buck converter operating at 1 MHz. IC Role / Device Role / Timing Role: Synchronous rectifier in low-side position; body diode conduction during dead time, then active conduction. Use Value: Low Q_rr = 20–40 nC and fast t_rr = 25–50 ns minimize reverse recovery loss, improving efficiency by ~2 % over diode solution.	Use Scenario: Isolating 24 V sensor supply in PLC I/O modules during fault conditions or firmware updates. IC Role / Device Role / Timing Role: Protected load switch with controlled turn-on slew rate to limit inrush into capacitive sensor loads. Use Value: 2.6 A continuous rating and -55 to +150 °C operating range support reliable operation in harsh industrial environments.

LED Backlighting

USB Power Delivery Switch

Use Scenario: Driving white LED strings in portable displays using PWM dimming at 1–5 kHz.

IC Role / Device Role / Timing Role: Low-side load switch controlling current path to LED cathodes; requires fast turn-on/off to minimize dimming artifacts.

Use Value: R_DS(on) = 0.320 Ω @ 4.5 V ensures <150 mW conduction loss at 2.2 A, while Q_g = 1.8 nC @ 4.5 V enables clean 5 kHz switching edges.

Use Scenario: Enabling/disabling 5–20 V power paths in USB-C PD sink applications with strict inrush control.

IC Role / Device Role / Timing Role: High-side or low-side power switch managing V_BUS connection; must withstand 100 V transients per USB PD spec.

Use Value: 100 V V_DS rating and 100 % UIS testing provide margin against ESD and hot-swap surges without external clamping.

DC/DC Converter Synchronous Rectifier

Industrial Sensor Power Gate

Use Scenario: Replacing Schottky diode in 12 V input, 3.3 V output buck converter operating at 1 MHz.

IC Role / Device Role / Timing Role: Synchronous rectifier in low-side position; body diode conduction during dead time, then active conduction.

Use Value: Low Q_rr = 20–40 nC and fast t_rr = 25–50 ns minimize reverse recovery loss, improving efficiency by ~2 % over diode solution.

Use Scenario: Isolating 24 V sensor supply in PLC I/O modules during fault conditions or firmware updates.

IC Role / Device Role / Timing Role: Protected load switch with controlled turn-on slew rate to limit inrush into capacitive sensor loads.

Use Value: 2.6 A continuous rating and -55 to +150 °C operating range support reliable operation in harsh industrial environments.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel load switch applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si1480EDH-T1-GE3	Copper leadframe variant with identical die and pinout; same R_DS(on), Q_g, and thermal specs.	No functional difference; suffix "E" denotes copper leadframe version per Vishay AN815.	Select Si1480EDH-T1-GE3 only if legacy BOM references "E" suffix; electrically and mechanically interchangeable.
DMN3026LSD-13	30 V V_DS, 2.6 A, R_DS(on) = 0.042 Ω @ 10 V; SOT-23-6 package with different pinout (G-S-D-D-D-D).	Lower voltage rating limits use to ≤24 V systems; superior R_DS(on) benefits high-current, low-V_DS apps.	Choose DMN3026LSD-13 only for 3.3/5/12 V rails where lower conduction loss outweighs voltage headroom loss.

Compared with SI1480DH-T1-GE3, Si1480EDH-T1-GE3 is functionally identical but uses a standardized copper-leadframe designation, while DMN3026LSD-13 offers lower R_DS(on) at half the voltage rating-making SI1480DH-T1-GE3 the optimal choice for 48 V-compatible, thermally constrained 100 V load switching.

Availability

SI1480DH-T1-GE3 is available at Aetrix Electronics and suitable for LED backlighting, USB power delivery switching, and industrial sensor power gating requiring stable component supply across automotive-grade temperature ranges and long-lifecycle production programs.

Supply support for SI1480DH-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, optoelectronics, and passive components with emphasis on reliability, miniaturization, and power efficiency.

The Si1480DH product line belongs to Vishay's LITTLE FOOT® family of ultra-small surface-mount MOSFETs, designed specifically for space-constrained power management in portable, industrial, and communications equipment where thermal performance and logic-level drive are critical.

FAQ

What is the maximum continuous drain current rating for SI1480DH-T1-GE3 at 70 °C case temperature?

The SI1480DH-T1-GE3 has a maximum continuous drain current (I_D) of 2.2 A when the case temperature (T_C) is maintained at 70 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the SOT-363 copper-leadframe package under sustained power dissipation.

Does SI1480DH-T1-GE3 support 3.3 V logic-level gate drive?

Yes, SI1480DH-T1-GE3 supports 3.3 V logic-level gate drive: its gate-threshold voltage (V_GS(th)) is 1.6–3.0 V, and it achieves R_DS(on) = 0.320 Ω max at V_GS = 4.5 V with I_D = 1.5 A. At 3.3 V, it remains partially enhanced and suitable for low-duty-cycle or low-current switching.

What is the thermal resistance from junction to foot (R_thJF) for SI1480DH-T1-GE3?

The SI1480DH-T1-GE3 has a typical junction-to-foot thermal resistance (R_thJF) of 34 °C/W and a maximum of 45 °C/W, measured at the drain leads where they contact the PCB. This value confirms the benefit of its four-drain-pin copper leadframe design for efficient heat extraction.

Is SI1480DH-T1-GE3 suitable for use in synchronous rectification?

Yes, SI1480DH-T1-GE3 is suitable for synchronous rectification: its body diode exhibits V_SD = 0.9–1.2 V at I_S = 2.2 A and Q_rr = 20–40 nC, with t_rr = 25–50 ns. These parameters enable efficient replacement of Schottky diodes in low-to-mid frequency DC/DC converters.

What does the "GE3" suffix indicate in SI1480DH-T1-GE3?

The "GE3" suffix in SI1480DH-T1-GE3 indicates a lead (Pb)-free and halogen-free construction compliant with RoHS Directive 2011/65/EU, packaged in tape-and-reel format (T1) with standard moisture sensitivity level (MSL3) per J-STD-020, and marked with "AU" code per Vishay's SOT-363 marking convention.

SI1480DH-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: 6-TSSOP, SC-88, SOT-363

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 2.6A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 200mOhm @ 1.9A, 10V

Vgs(th) (Max) @ Id:: 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 5 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 130 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 1.5W (Ta), 2.8W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SC-70-6

SI1480DH-T1-GE3 FAQ

1.How can I place an order for SI1480DH-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI1480DH-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI1480DH-T1-GE3 reliable?

The price and inventory of SI1480DH-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI1480DH-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SI1480DH-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI1480DH-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI1480DH-T1-GE3?

SI1480DH-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI1480DH-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI1480DH-T1-GE3?

For technical support, including SI1480DH-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI1480DH-T1-GE3 requirements.

6.How does Aetrix verify that SI1480DH-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SI1480DH-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI1480DH-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SI1480DH-T1-GE3?

All SI1480DH-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI1480DH-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI1480DH-T1-GE3 part is unused and in its original packaging.

Return procedure for SI1480DH-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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