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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI1488DH-T1-E3

Name: SI1488DH-T1-E3
Brand: Vishay Siliconix
SKU: SI1488DH-T1-E3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI1488DH-T1-E3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: 6-TSSOP, SC-88, SOT-363

Datasheet:: SI1488DH-T1-E3.pdf

Description:: MOSFET N-CH 20V 6.1A SC70-6

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Product details

Overview

SI1488DH-T1-E3 from Vishay Siliconix is an N-channel 20 V TrenchFET® Power MOSFET in SOT-363 (SC-70-6) package, with R_DS(on) = 0.049 Ω at V_GS = 4.5 V, 6.1 A continuous drain current at T_C = 25 °C, and 6.0 nC total gate charge - designed for low-voltage load switching in portable electronics.

For engineers reviewing the SI1488DH-T1-E3 datasheet, SI1488DH-T1-E3 pinout, SI1488DH-T1-E3 application, or SI1488DH-T1-E3 equivalent, key selection criteria include its 20 V V_DS, sub-50 mΩ on-resistance at 4.5 V drive, 6-pin SOT-363 footprint, and verified 100 % R_g and UIS testing for robustness in battery-powered systems.

Technical Context

This device operates as a single N-channel enhancement-mode MOSFET optimized for high-efficiency, low-voltage DC load switching. Its trench-based silicon structure delivers low R_DS(on) across V_GS = 1.8–4.5 V, enabling compatibility with 1.8 V, 2.5 V, and 3.3 V logic-level gate drivers.

Thermal performance is defined by R_thJA = 60–80 °C/W (t ≤ 5 s) and R_thJF = 34–45 °C/W (steady state), supporting operation up to T_J = 150 °C. The integrated body diode has V_SD = 0.8–1.2 V at I_S = 2.2 A and t_rr = 10.6–16 ns under specified dI/dt conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	20 V - Maximum drain-source blocking voltage; suitable for 12 V and lower battery/supply rails.
R_DS(on) @ V_GS = 4.5 V	0.049 Ω - Enables <150 mW conduction loss at 6 A, critical for thermal management in compact PCBs.
I_D (continuous, T_C = 25 °C)	6.1 A - Rated current under heatsinked conditions; derates to 3.7 A at T_C = 70 °C.
Q_g (total gate charge)	6.0 nC - Low drive energy requirement supports fast switching with minimal gate driver power overhead.
V_GS(th)	0.45–0.95 V - Ensures reliable turn-on with low-voltage microcontrollers and PMICs without level-shifting.
T_J range	−55 to +150 °C - Supports industrial and extended-temperature portable applications including wearables and IoT sensors.

Pinout & Package

SOT-363 (SC-70-6) surface-mount package with 1.3 mm × 2.1 mm footprint and 0.65 mm lead pitch. Exposed drain pads on pins 1, 2, 4, and 5 provide low thermal resistance to PCB copper.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 4, 5	Drain (D)	Four parallel drain terminals reduce package inductance and improve thermal dissipation via PCB copper pour.
3	Gate (G)	Single gate input; low C_iss = 530 pF and R_g = 7.3–11 Ω enable stable high-speed switching with minimal ringing.
6	Source (S)	Source reference terminal; connects to ground plane or return path; body diode anode is tied to source.

Key Features

Feature	Design Value
TrenchFET® technology	Delivers industry-leading R_DS(on) × area efficiency in SC-70-6, enabling higher current density than planar MOSFETs of same size.
100 % R_g and UIS tested	Each unit undergoes gate resistance screening and unclamped inductive switching stress test - ensures ruggedness in real-world load dump events.
Halogen-free & RoHS-compliant	Meets IEC 61249-2-21 and Directive 2002/95/EC; no brominated flame retardants; compatible with lead-free reflow profiles.
Low V_GS(th) with tight distribution	0.45–0.95 V threshold enables consistent turn-on across temperature and process variation, reducing need for external biasing.

Applications

Smartphone Power Management	Wireless Earbud Battery Protection
Use Scenario: Controlling power delivery to camera modules and display backlight during active mode while minimizing standby leakage. IC Role / Device Role / Timing Role: Low-side load switch managing 3.3–5 V rail sequencing and isolation. Use Value: 0.049 Ω R_DS(on) limits voltage drop to <320 mV at 6.5 A peak, preserving system efficiency and battery runtime.	Use Scenario: Isolating charging circuitry from main battery during fast-charge cycles to prevent reverse current and thermal runaway. IC Role / Device Role / Timing Role: High-reliability N-channel switch in battery protection FET configuration. Use Value: 100 % UIS-tested ruggedness withstands repetitive 10 mJ avalanche energy events common in Li-ion overvoltage transients.
USB-C Port Power Delivery	Wearable Sensor Hub Power Gating
Use Scenario: Enabling/disabling VBUS power path in USB-C receptacles based on CC logic detection and PD negotiation status. IC Role / Device Role / Timing Role: Logic-level controlled power switch with fast turn-on (t_d(on) = 8.5 ns) and rise time (t_r = 45 ns). Use Value: 6.0 nC Q_g allows full turn-on with <1 µs delay using standard 3.3 V GPIO, meeting USB PD timing requirements.	Use Scenario: Gating power to MEMS accelerometers and environmental sensors during sleep states to achieve sub-µA system quiescent current. IC Role / Device Role / Timing Role: Ultra-low-threshold load switch activated directly by MCU GPIO without level shifter. Use Value: V_GS(th) down to 0.45 V ensures reliable turn-on even at 1.8 V IO supply, eliminating external bias components.

Smartphone Power Management

Wireless Earbud Battery Protection

Use Scenario: Controlling power delivery to camera modules and display backlight during active mode while minimizing standby leakage.

IC Role / Device Role / Timing Role: Low-side load switch managing 3.3–5 V rail sequencing and isolation.

Use Value: 0.049 Ω R_DS(on) limits voltage drop to <320 mV at 6.5 A peak, preserving system efficiency and battery runtime.

Use Scenario: Isolating charging circuitry from main battery during fast-charge cycles to prevent reverse current and thermal runaway.

IC Role / Device Role / Timing Role: High-reliability N-channel switch in battery protection FET configuration.

Use Value: 100 % UIS-tested ruggedness withstands repetitive 10 mJ avalanche energy events common in Li-ion overvoltage transients.

USB-C Port Power Delivery

Wearable Sensor Hub Power Gating

Use Scenario: Enabling/disabling VBUS power path in USB-C receptacles based on CC logic detection and PD negotiation status.

IC Role / Device Role / Timing Role: Logic-level controlled power switch with fast turn-on (t_d(on) = 8.5 ns) and rise time (t_r = 45 ns).

Use Value: 6.0 nC Q_g allows full turn-on with <1 µs delay using standard 3.3 V GPIO, meeting USB PD timing requirements.

Use Scenario: Gating power to MEMS accelerometers and environmental sensors during sleep states to achieve sub-µA system quiescent current.

IC Role / Device Role / Timing Role: Ultra-low-threshold load switch activated directly by MCU GPIO without level shifter.

Use Value: V_GS(th) down to 0.45 V ensures reliable turn-on even at 1.8 V IO supply, eliminating external bias components.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel load switch applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si1487DH-T1-E3	R_DS(on) = 0.035 Ω @ 4.5 V (lower), but ID = 7.2 A and Q_g = 7.5 nC (higher); identical SOT-363 package and pinout.	Better conduction efficiency at high current; slightly slower switching due to higher gate charge.	Select when minimizing I²R losses dominates over gate drive power and speed.
DMN2025LSD-13	R_DS(on) = 0.045 Ω @ 4.5 V, Q_g = 5.5 nC, but in SuperSOT-6 (larger 2.9 × 2.8 mm footprint); not pin-compatible.	Lower gate charge improves switching efficiency, but requires PCB layout change and larger board area.	Select when faster switching and lower drive loss justify redesign and increased footprint.

Compared with SI1488DH-T1-E3, Si1487DH-T1-E3 offers lower on-resistance at the cost of higher gate charge, while DMN2025LSD-13 trades pin compatibility for reduced Q_g - making SI1488DH-T1-E3 the optimal balance of size, drive simplicity, and conduction loss in space-constrained portable designs.

Availability

SI1488DH-T1-E3 is available at Aetrix Electronics and suitable for smartphone power management, wireless earbud battery protection, and USB-C port power delivery requiring stable component supply, full traceability, and long-term lifecycle support.

Supply support for SI1488DH-T1-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for power, signal, and sensing applications.

The Si1488DH-T1-E3 belongs to Vishay's TrenchFET® Gen III low-voltage N-channel MOSFET family, engineered specifically for efficient, compact load switching in battery-powered consumer electronics.

FAQ

What is the maximum continuous drain current rating for SI1488DH-T1-E3 at 70 °C case temperature?

The SI1488DH-T1-E3 supports 4.9 A continuous drain current at T_C = 70 °C, per Absolute Maximum Ratings table. This derating reflects thermal limits of the SOT-363 package without additional heatsinking. At ambient temperature (T_A = 25 °C), the rating drops to 4.6 A due to higher junction-to-ambient thermal resistance.

Does SI1488DH-T1-E3 have a guaranteed gate threshold voltage range?

Yes - the SI1488DH-T1-E3 has a guaranteed V_GS(th) range of 0.45 V to 0.95 V at T_J = 25 °C and I_D = 250 µA. This tight specification ensures predictable turn-on behavior across manufacturing lots and simplifies gate drive design for low-voltage controllers.

Is SI1488DH-T1-E3 suitable for use as a high-side switch?

No - the SI1488DH-T1-E3 is an N-channel MOSFET with no integrated charge pump or bootstrap capability. It is designed for low-side switching configurations. Using it as a high-side switch would require external gate voltage boosting beyond V_DD, which is not supported by its ±8 V V_GS rating.

What is the body diode forward voltage of SI1488DH-T1-E3 at 2.2 A?

The SI1488DH-T1-E3 exhibits a source-drain body diode forward voltage (V_SD) of 0.8–1.2 V at I_S = 2.2 A and T_J = 25 °C. This diode is integral to the MOSFET structure and supports synchronous rectification or freewheeling paths in DC-DC converters and motor drivers.

How is the SI1488DH-T1-E3 marked on the package?

The SI1488DH-T1-E3 uses a two-line marking code: "AG" on the first line (part number identifier) and a lot traceability/date code on the second line. This marking appears on the top surface of the SOT-363 package and conforms to Vishay's standard SC-70 labeling convention.

SI1488DH-T1-E3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: 6-TSSOP, SC-88, SOT-363

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 6.1A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 1.8V, 4.5V

Rds On (Max) @ Id, Vgs:: 49mOhm @ 4.6A, 4.5V

Vgs(th) (Max) @ Id:: 950mV @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 10 nC @ 5 V

Vgs (Max):: ±8V

Input Capacitance (Ciss) (Max) @ Vds:: 530 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 1.5W (Ta), 2.8W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SC-70-6

SI1488DH-T1-E3 FAQ

1.How can I place an order for SI1488DH-T1-E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI1488DH-T1-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI1488DH-T1-E3 reliable?

The price and inventory of SI1488DH-T1-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI1488DH-T1-E3 is usually 5 days.

3.What payment methods are accepted for SI1488DH-T1-E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI1488DH-T1-E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI1488DH-T1-E3?

SI1488DH-T1-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI1488DH-T1-E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI1488DH-T1-E3?

For technical support, including SI1488DH-T1-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI1488DH-T1-E3 requirements.

6.How does Aetrix verify that SI1488DH-T1-E3 is sourced from the original manufacturer or authorized distributors?

All SI1488DH-T1-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI1488DH-T1-E3 meets industry standards.

7.What is the process for return or replacement of SI1488DH-T1-E3?

All SI1488DH-T1-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SI1488DH-T1-E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI1488DH-T1-E3 part is unused and in its original packaging.

Return procedure for SI1488DH-T1-E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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