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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI1499DH-T1-BE3

Name: SI1499DH-T1-BE3
Brand: Vishay Siliconix
SKU: SI1499DH-T1-BE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI1499DH-T1-BE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: 6-TSSOP, SC-88, SOT-363

Datasheet:: SI1499DH-T1-BE3.pdf

Description:: MOSFET P-CH 8V 1.6A/1.6A SC70-6

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Product details

Overview

SI1499DH-T1-BE3 from Vishay Siliconix is a P-channel TrenchFET® MOSFET in SOT-363 (SC-70-6) package, rated for -8 V V_DS, 0.078 Ω R_DS(on) at V_GS = -4.5 V, and -1.6 A continuous drain current. It operates down to V_GS = -1.2 V, enabling load switching in ultra-low-voltage portable systems with extended battery life.

For engineers reviewing the SI1499DH-T1-BE3 datasheet, SI1499DH-T1-BE3 pinout, SI1499DH-T1-BE3 application, or SI1499DH-T1-BE3 equivalent, key selection criteria include guaranteed 1.2 V gate drive capability, ultra-low on-resistance at low V_GS, thermal performance of 125 °C/W R_thJA, and SC-70-6 footprint compatibility with space-constrained PCB layouts.

Technical Context

This device uses trench-gate MOSFET technology optimized for low-voltage logic-level operation. Its gate threshold voltage (V_GS(th) = -0.35 to -0.8 V) and sub-1.5 V R_DS(on) specification enable reliable turn-on from single-cell Li-ion or Li-polymer battery rails (2.5–3.6 V nominal).

The SOT-363 package features four parallel drain terminals and a copper leadframe, reducing both R_DS(on) and junction-to-foot thermal resistance (R_thJF = 34 °C/W typ.). Body diode recovery time (t_rr = 25–38 ns) supports moderate-speed synchronous rectification or reverse polarity protection.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-8 V - Maximum drain-source blocking voltage compatible with 3.3 V and lower system rails.
R_DS(on) @ V_GS = -4.5 V	0.078 Ω - Enables <125 mW conduction loss at 1.6 A, critical for thermally constrained portable PCBs.
R_DS(on) @ V_GS = -1.2 V	0.424 Ω - Confirmed operation at 1.2 V gate drive, supporting deep battery discharge states without control loss.
I_D Continuous	-1.6 A - Package-limited current rating; sufficient for USB-powered peripherals and sensor modules.
Q_g Total Gate Charge	10.5 nC - Low gate charge enables fast switching with minimal driver strength, reducing control IC loading.
R_thJA	125 °C/W - Junction-to-ambient thermal resistance on standard FR4; defines safe power envelope at ambient temperature.
V_GS(th)	-0.35 to -0.8 V - Tight threshold range ensures consistent turn-on across temperature and process variation.

Pinout & Package

SOT-363 (SC-70-6) package with copper leadframe; 2.0 mm × 2.1 mm footprint; 0.95 mm height; four drain pins (1, 2, 4, 5), one source pin (6), one gate pin (3).

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 4, 5	Drain (D)	Four parallel drain connections reduce effective R_DS(on) and improve thermal spreading to PCB copper.
3	Gate (G)	Control terminal; requires no external pull-up for high-side switch applications due to P-channel topology.
6	Source (S)	Reference node for gate drive; tied to system V_IN in high-side load switch configurations.

Key Features

Feature	Design Value
TrenchFET® architecture	Delivers 0.078 Ω R_DS(on) at -4.5 V while maintaining robust SOA and low Q_g.
1.2 V gate drive guarantee	Ensures functional turn-on even at end-of-discharge battery voltages (~2.5 V rail), extending usable runtime.
Copper leadframe construction	Reduces R_thJF to 34 °C/W and improves thermal coupling to PCB, enabling higher sustained current in compact layouts.
Halogen-free & RoHS-compliant	Meets IEC 61249-2-21 and Directive 2002/95/EC; suitable for consumer and medical portable equipment.
Low body diode V_SD	-0.7 to -1.2 V forward drop at -2.4 A supports efficient reverse polarity protection without external diode.

Applications

USB Peripheral Power Switching	Li-ion Battery Protection Circuit
Use Scenario: Enabling/disabling power to USB audio headsets or HID devices during sleep mode to minimize quiescent current. IC Role / Device Role / Timing Role: High-side load switch controlling VBUS path; driven directly by 1.8 V GPIO. Use Value: Guaranteed turn-on at V_GS = -1.2 V eliminates need for level-shifting circuitry, saving board area and BOM cost.	Use Scenario: Reverse-current blocking between battery pack and system load during charging or fault conditions. IC Role / Device Role / Timing Role: Back-to-back configured P-MOSFET in battery protection IC auxiliary path. Use Value: Low 0.424 Ω R_DS(on) at 1.2 V gate drive minimizes voltage drop across protection FET during deep discharge.
Smartwatch Display Backlight Control	Wireless Earbud Charging Case Load Switch
Use Scenario: Sequencing power to OLED display drivers after system wake-up to avoid inrush current spikes. IC Role / Device Role / Timing Role: Controlled high-side switch with soft-start behavior enabled via gate resistor. Use Value: 10.5 nC Q_g allows precise timing control using low-power MCU GPIO, reducing EMI during turn-on.	Use Scenario: Isolating battery from charging circuitry when earbuds are removed to prevent leakage and self-discharge. IC Role / Device Role / Timing Role: Low-quiescent-load disconnect switch activated by hall-effect sensor output. Use Value: 100 nA max I_GSS and -1 µA I_DSS ensure <1 µA total system standby current, preserving multi-week shelf life.

USB Peripheral Power Switching

Li-ion Battery Protection Circuit

Use Scenario: Enabling/disabling power to USB audio headsets or HID devices during sleep mode to minimize quiescent current.

IC Role / Device Role / Timing Role: High-side load switch controlling VBUS path; driven directly by 1.8 V GPIO.

Use Value: Guaranteed turn-on at V_GS = -1.2 V eliminates need for level-shifting circuitry, saving board area and BOM cost.

Use Scenario: Reverse-current blocking between battery pack and system load during charging or fault conditions.

IC Role / Device Role / Timing Role: Back-to-back configured P-MOSFET in battery protection IC auxiliary path.

Use Value: Low 0.424 Ω R_DS(on) at 1.2 V gate drive minimizes voltage drop across protection FET during deep discharge.

Smartwatch Display Backlight Control

Wireless Earbud Charging Case Load Switch

Use Scenario: Sequencing power to OLED display drivers after system wake-up to avoid inrush current spikes.

IC Role / Device Role / Timing Role: Controlled high-side switch with soft-start behavior enabled via gate resistor.

Use Value: 10.5 nC Q_g allows precise timing control using low-power MCU GPIO, reducing EMI during turn-on.

Use Scenario: Isolating battery from charging circuitry when earbuds are removed to prevent leakage and self-discharge.

IC Role / Device Role / Timing Role: Low-quiescent-load disconnect switch activated by hall-effect sensor output.

Use Value: 100 nA max I_GSS and -1 µA I_DSS ensure <1 µA total system standby current, preserving multi-week shelf life.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel load switch applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si1498DH-T1-BE3	V_DS = -12 V; R_DS(on) = 0.115 Ω @ V_GS = -1.8 V; same SOT-363 package and pinout.	Better overvoltage margin for 5 V systems; higher R_DS(on) at 1.2 V limits use in deep-discharge scenarios.	Select when system rail exceeds 3.6 V or transient protection >8 V is required.
DMN2053LSD-13	V_DS = -20 V; R_DS(on) = 0.135 Ω @ V_GS = -2.5 V; SO-8 package (larger footprint, higher R_thJA).	Higher voltage rating but incompatible pinout and thermal performance; not drop-in replaceable.	Choose only if board redesign accommodates SO-8 and system requires >12 V blocking capability.

Compared with SI1499DH-T1-BE3, Si1498DH-T1-BE3 offers higher V_DS at the expense of low-V_GS on-resistance, while DMN2053LSD-13 trades miniaturization and thermal efficiency for voltage headroom-making SI1499DH-T1-BE3 optimal for space- and battery-life-critical 1.2–3.3 V portable designs.

Availability

SI1499DH-T1-BE3 is available at Aetrix Electronics and suitable for USB peripheral power management, wearable battery protection, smart sensor node load switching, and other portable electronics applications requiring stable component supply and long-term manufacturability.

Supply support for SI1499DH-T1-BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on efficiency, miniaturization, and reliability.

The SI1499DH-T1-BE3 belongs to Vishay's LITTLE FOOT® TrenchFET® family, engineered specifically for ultra-compact, low-voltage load switching in battery-powered consumer and medical wearables.

FAQ

What is the maximum continuous drain current for SI1499DH-T1-BE3 at 70 °C case temperature?

The SI1499DH-T1-BE3 supports -1.6 A continuous drain current at TC = 70 °C, as specified in its Absolute Maximum Ratings table. This rating is package-limited and remains unchanged from the 25 °C rating due to thermal derating constraints inherent to the SOT-363 footprint. The device's 125 °C/W R_thJA determines actual power handling under real PCB conditions.

Does SI1499DH-T1-BE3 require a gate pull-up resistor in high-side switch configurations?

No, SI1499DH-T1-BE3 does not require an external gate pull-up resistor in high-side switch applications because it is a P-channel MOSFET. When the gate is pulled low relative to the source (e.g., by an MCU GPIO), the device turns on; when the gate floats or is pulled high to source potential, it remains off. Internal gate leakage (±100 nA) is negligible for most control interfaces.

Can SI1499DH-T1-BE3 be used with a 1.8 V microcontroller GPIO driving the gate?

Yes, SI1499DH-T1-BE3 is fully compatible with 1.8 V GPIO control. With V_GS(th) as low as -0.35 V and guaranteed R_DS(on) = 0.424 Ω at V_GS = -1.2 V, it achieves reliable enhancement-mode turn-on when the source is at 1.8 V and the gate is driven to 0 V (yielding V_GS = -1.8 V). No level shifter is needed.

What is the body diode forward voltage of SI1499DH-T1-BE3 at -2.4 A?

The body diode forward voltage (V_SD) of SI1499DH-T1-BE3 is -0.7 V minimum and -1.2 V maximum at IS = -2.4 A and V_GS = 0 V, per the Drain-Source Body Diode Characteristics table. This low forward drop enables efficient reverse-polarity protection without adding a discrete Schottky diode in series with the load path.

Is SI1499DH-T1-BE3 halogen-free and RoHS-compliant?

Yes, SI1499DH-T1-BE3 is both halogen-free per IEC 61249-2-21 and compliant with RoHS Directive 2002/95/EC. The "-BE3" suffix denotes lead-free (Pb-free) termination and halogen-free packaging, confirmed in the Ordering Information section of Vishay's official datasheet (Document Number: 73338, Rev. F).

SI1499DH-T1-BE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: 6-TSSOP, SC-88, SOT-363

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 8 V

Current - Continuous Drain (Id) @ 25°C:: 1.6A (Ta), 1.6A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: 78mOhm @ 2A, 4.5V

Vgs(th) (Max) @ Id:: 800mV @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 16 nC @ 4.5 V

Vgs (Max):: ±5V

Input Capacitance (Ciss) (Max) @ Vds:: 650 pF @ 4 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta), 2.78W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SC-70-6

SI1499DH-T1-BE3 FAQ

1.How can I place an order for SI1499DH-T1-BE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI1499DH-T1-BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI1499DH-T1-BE3 reliable?

The price and inventory of SI1499DH-T1-BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI1499DH-T1-BE3 is usually 5 days.

3.What payment methods are accepted for SI1499DH-T1-BE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI1499DH-T1-BE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI1499DH-T1-BE3?

SI1499DH-T1-BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI1499DH-T1-BE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI1499DH-T1-BE3?

For technical support, including SI1499DH-T1-BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI1499DH-T1-BE3 requirements.

6.How does Aetrix verify that SI1499DH-T1-BE3 is sourced from the original manufacturer or authorized distributors?

All SI1499DH-T1-BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI1499DH-T1-BE3 meets industry standards.

7.What is the process for return or replacement of SI1499DH-T1-BE3?

All SI1499DH-T1-BE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI1499DH-T1-BE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI1499DH-T1-BE3 part is unused and in its original packaging.

Return procedure for SI1499DH-T1-BE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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