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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI1499DH-T1-E3

Name: SI1499DH-T1-E3
Brand: Vishay Siliconix
SKU: SI1499DH-T1-E3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI1499DH-T1-E3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: 6-TSSOP, SC-88, SOT-363

Datasheet:: SI1499DH-T1-E3.pdf

Description:: MOSFET P-CH 8V 1.6A SC70-6

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Product details

Overview

SI1499DH-T1-E3 from Vishay Siliconix is a P-channel TrenchFET® MOSFET in SOT-363 (SC-70-6) package, rated for -8 V V_DS, 0.078 Ω R_DS(on) at V_GS = -4.5 V, -1.6 A continuous drain current, and guaranteed operation down to V_GS = -1.2 V - optimized for low-voltage load switching in portable battery-powered systems.

For engineers reviewing the SI1499DH-T1-E3 datasheet, SI1499DH-T1-E3 pinout, SI1499DH-T1-E3 application, or SI1499DH-T1-E3 equivalent, key selection criteria include ultra-low gate threshold compatibility with 1.2 V logic, normalized on-resistance stability over temperature, junction-to-foot thermal resistance of 34 °C/W, and verified body diode recovery performance (t_rr = 25–38 ns).

Technical Context

This device uses trench-gate silicon technology to achieve enhanced channel density and reduced specific on-resistance. Its gate threshold voltage (V_GS(th) = -0.35 to -0.8 V) enables reliable turn-on with 1.2 V control signals, while the four-drain-pin configuration in SC-70-6 improves current sharing and thermal conduction to PCB copper.

The MOSFET features a fully characterized body diode with V_SD = -0.7 to -1.2 V at I_S = -2.4 A and Q_rr = 7–11 nC, supporting synchronous rectification and reverse-current blocking in compact DC-DC and power-path architectures without external diode supplementation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-8 V - maximum drain-source blocking voltage for low-voltage rail isolation
R_DS(on) @ V_GS = -4.5 V	0.078 Ω - enables <125 mW conduction loss at 1.6 A, critical for thermal budget in space-constrained layouts
I_D (continuous)	-1.6 A - package-limited current rating under steady-state conditions at T_A = 25 °C
V_GS(th)	-0.35 to -0.8 V - ensures robust turn-on with 1.2 V logic drivers, eliminating need for level-shifting
Q_g	10.5 nC (typ.) - supports fast switching with low gate-drive power in high-frequency load control
R_thJF	34 °C/W (typ.) - junction-to-foot thermal resistance enables efficient heat transfer through four drain leads to PCB
t_rr	25–38 ns - body diode reverse recovery time validated for use in asynchronous buck or OR-ing circuits

Pinout & Package

SOT-363 (SC-70-6) package with copper leadframe, 2.0 mm × 2.1 mm footprint, 0.95 mm height, and four dedicated drain terminals for low-inductance, high-current routing and improved thermal dissipation.

Pin/Terminal	Circuit Role	Design Meaning
1	Drain	Primary current-carrying terminal; one of four parallel drain connections to minimize R_DS(on) and thermal resistance
2	Drain	Redundant drain path enhancing current capacity and thermal spreading to PCB copper
3	Gate	Control input; requires no level shifter for 1.2 V logic-compatible drive due to low V_GS(th)
4	Drain	Third drain terminal enabling symmetrical layout and balanced thermal distribution
5	Drain	Fourth drain connection - all four drains electrically common and thermally coupled to die backside
6	Source	Reference node for gate control and current return; tied to system ground or negative rail in high-side switch configurations

Key Features

Feature	Design Value
1.2 V logic-compatible gate drive	Guaranteed turn-on at V_GS = -1.2 V supports direct interface with ultra-low-voltage microcontrollers and PMICs
Copper leadframe construction	Reduces R_thJF by >50% vs. Alloy 42 - 34 °C/W typical enables 1 W power handling on minimal PCB area
Four-drain-terminal topology	Improves current sharing, lowers package inductance, and enhances thermal coupling to PCB copper pour
TrenchFET® process technology	Delivers 0.078 Ω R_DS(on) in SC-70-6 - among lowest on-resistance values available in this footprint
Halogen-free & RoHS-compliant	Meets IEC 61249-2-21 and Directive 2002/95/EC for environmentally regulated end equipment

Applications

Battery-Powered Load Switch	USB Port Power Control
Use Scenario: Enabling/disabling power to peripherals in smartphones, wearables, and medical sensors during sleep mode. IC Role / Device Role / Timing Role: Low-side or high-side load switch controlling V_BAT delivery with minimal quiescent current and fast response. Use Value: 0.424 Ω R_DS(on) at V_GS = -1.2 V ensures functional switching even under deep discharge, extending usable battery life.	Use Scenario: Managing power delivery to USB Type-C downstream ports with overcurrent protection coordination. IC Role / Device Role / Timing Role: Reverse-polarity protected, logic-controlled power gate between source and port VBUS line. Use Value: -8 V V_DS rating and -0.7 V body diode forward drop support safe hot-plug insertion and fault current limiting.
PMIC Output Stage	Low-Voltage OR-ing Circuit
Use Scenario: Final output stage of integrated power management ICs supplying core voltage to ultra-low-power MCUs. IC Role / Device Role / Timing Role: Synchronous rectifier or pass element in buck converter output stage or LDO bypass path. Use Value: 10.5 nC Q_g and 9.5 Ω gate resistance enable clean, low-loss switching at ≥1 MHz frequencies without excessive driver loading.	Use Scenario: Dual-battery or battery+charger OR-ing in portable instrumentation and handheld test equipment. IC Role / Device Role / Timing Role: Back-to-back configured P-channel MOSFET providing reverse-current blocking and seamless source switchover. Use Value: Verified body diode t_rr = 25–38 ns and Q_rr = 7–11 nC prevent shoot-through and reduce switching losses during transition events.

Battery-Powered Load Switch

USB Port Power Control

Use Scenario: Enabling/disabling power to peripherals in smartphones, wearables, and medical sensors during sleep mode.

IC Role / Device Role / Timing Role: Low-side or high-side load switch controlling V_BAT delivery with minimal quiescent current and fast response.

Use Value: 0.424 Ω R_DS(on) at V_GS = -1.2 V ensures functional switching even under deep discharge, extending usable battery life.

Use Scenario: Managing power delivery to USB Type-C downstream ports with overcurrent protection coordination.

IC Role / Device Role / Timing Role: Reverse-polarity protected, logic-controlled power gate between source and port VBUS line.

Use Value: -8 V V_DS rating and -0.7 V body diode forward drop support safe hot-plug insertion and fault current limiting.

PMIC Output Stage

Low-Voltage OR-ing Circuit

Use Scenario: Final output stage of integrated power management ICs supplying core voltage to ultra-low-power MCUs.

IC Role / Device Role / Timing Role: Synchronous rectifier or pass element in buck converter output stage or LDO bypass path.

Use Value: 10.5 nC Q_g and 9.5 Ω gate resistance enable clean, low-loss switching at ≥1 MHz frequencies without excessive driver loading.

Use Scenario: Dual-battery or battery+charger OR-ing in portable instrumentation and handheld test equipment.

IC Role / Device Role / Timing Role: Back-to-back configured P-channel MOSFET providing reverse-current blocking and seamless source switchover.

Use Value: Verified body diode t_rr = 25–38 ns and Q_rr = 7–11 nC prevent shoot-through and reduce switching losses during transition events.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel load switch applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si1498DH-T1-E3	N-channel counterpart with same package and 0.055 Ω R_DS(on) @ V_GS = +4.5 V; requires high-side driver or charge pump	Not suitable for direct 1.2 V logic control; used where ground-referenced switching is preferred	Select when lower on-resistance justifies added gate-drive complexity and board space for driver circuitry
DMN2053LFG-7	P-channel in SOT-363 with -20 V V_DS, 0.125 Ω R_DS(on) @ -4.5 V, and V_GS(th) = -1.0 to -2.5 V - higher threshold and lower voltage rating margin	Less compatible with sub-1.5 V control rails; better suited for 3.3 V systems with higher blocking requirements	Choose when higher V_DS margin is prioritized over 1.2 V logic compatibility and on-resistance

Compared with SI1499DH-T1-E3, Si1498DH-T1-E3 offers lower R_DS(on) but demands active gate driving, while DMN2053LFG-7 provides greater voltage headroom at the cost of gate-threshold compatibility and conduction efficiency at ultra-low V_GS.

Availability

SI1499DH-T1-E3 is available at Aetrix Electronics and suitable for battery management, USB power delivery, and portable PMIC applications requiring stable component supply, Pb-free compliance, and long-term lifecycle continuity.

Supply support for SI1499DH-T1-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix designs discrete semiconductors with emphasis on power efficiency, miniaturization, and reliability across consumer, industrial, and computing markets.

The SI1499DH-T1-E3 belongs to the LITTLE FOOT® TrenchFET® family, engineered specifically for ultra-compact, low-voltage load switching where 1.2 V logic compatibility, thermal performance, and halogen-free compliance are mandatory design constraints.

FAQ

What is the maximum continuous drain current rating for SI1499DH-T1-E3 at 70 °C ambient temperature?

The SI1499DH-T1-E3 has a continuous drain current rating of -1.6 A at both T_C = 70 °C and T_A = 70 °C, as specified in the Absolute Maximum Ratings table. This limit is package-constrained and applies under steady-state conditions with proper PCB copper area and thermal management per the recommended pad pattern in Application Note 72602. The SI1499DH-T1-E3 maintains this rating across its full operating junction temperature range up to 150 °C.

Does SI1499DH-T1-E3 support true 1.2 V gate drive, and what is the R_DS(on) at that voltage?

Yes, SI1499DH-T1-E3 is explicitly guaranteed for operation at V_GS = -1.2 V, with R_DS(on) = 0.424 Ω measured at I_D = -0.100 A. This specification is confirmed in the Product Summary table and validated across production lots. The SI1499DH-T1-E3 achieves functional switching at this voltage due to its low V_GS(th) range (-0.35 to -0.8 V), making it suitable for direct interface with 1.2 V logic outputs without level translation.

What is the thermal resistance from junction to foot (R_thJF) for SI1499DH-T1-E3, and why does it matter?

The SI1499DH-T1-E3 has a typical junction-to-foot thermal resistance (R_thJF) of 34 °C/W, with a maximum of 45 °C/W. This parameter quantifies heat flow from the silicon die directly to the drain leads contacting the PCB - critical for estimating localized temperature rise in high-density layouts. Because the SI1499DH-T1-E3 uses a copper leadframe and four drain terminals, its R_thJF is significantly lower than Alloy 42 alternatives, enabling higher power handling in minimal board area without heatsinks.

Can SI1499DH-T1-E3 be used in back-to-back configuration for reverse-current blocking?

Yes, SI1499DH-T1-E3 is suitable for back-to-back P-channel configuration in OR-ing and battery-switchover applications. Its body diode is fully characterized with V_SD = -0.7 to -1.2 V at I_S = -2.4 A and t_rr = 25–38 ns, allowing predictable reverse-recovery behavior. When two SI1499DH-T1-E3 devices are placed source-to-source, they provide bidirectional blocking and controlled turn-off - a capability confirmed in Vishay's application guidance for load-switch topologies.

Is SI1499DH-T1-E3 halogen-free and RoHS-compliant?

Yes, SI1499DH-T1-E3 is both halogen-free per IEC 61249-2-21 and compliant with RoHS Directive 2002/95/EC, as stated in the Features section and Ordering Information. The "-E3" suffix denotes lead-free (Pb-free) packaging, and the device meets all material restrictions for environmentally regulated end equipment. This compliance is verified across manufacturing sites and documented in Vishay's material declarations for Document Number 73338.

SI1499DH-T1-E3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: 6-TSSOP, SC-88, SOT-363

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 8 V

Current - Continuous Drain (Id) @ 25°C:: 1.6A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 1.2V, 4.5V

Rds On (Max) @ Id, Vgs:: 78mOhm @ 2A, 4.5V

Vgs(th) (Max) @ Id:: 800mV @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 16 nC @ 4.5 V

Vgs (Max):: ±5V

Input Capacitance (Ciss) (Max) @ Vds:: 650 pF @ 4 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta), 2.78W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SC-70-6

SI1499DH-T1-E3 FAQ

1.How can I place an order for SI1499DH-T1-E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI1499DH-T1-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI1499DH-T1-E3 reliable?

The price and inventory of SI1499DH-T1-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI1499DH-T1-E3 is usually 5 days.

3.What payment methods are accepted for SI1499DH-T1-E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI1499DH-T1-E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI1499DH-T1-E3?

SI1499DH-T1-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI1499DH-T1-E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI1499DH-T1-E3?

For technical support, including SI1499DH-T1-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI1499DH-T1-E3 requirements.

6.How does Aetrix verify that SI1499DH-T1-E3 is sourced from the original manufacturer or authorized distributors?

All SI1499DH-T1-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI1499DH-T1-E3 meets industry standards.

7.What is the process for return or replacement of SI1499DH-T1-E3?

All SI1499DH-T1-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SI1499DH-T1-E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI1499DH-T1-E3 part is unused and in its original packaging.

Return procedure for SI1499DH-T1-E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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