Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI1499DH-T1-GE3

Name: SI1499DH-T1-GE3
Brand: Vishay Siliconix
SKU: SI1499DH-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: SI1499DH-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: 6-TSSOP, SC-88, SOT-363

Datasheet:: SI1499DH-T1-GE3.pdf

Description:: MOSFET P-CH 8V 1.6A SC70-6

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:1,250

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

SI1499DH-T1-GE3 from Vishay Siliconix is a P-channel TrenchFET® MOSFET in SOT-363 (SC-70) package, rated for -8 V V_DS, 0.078 Ω R_DS(on) at V_GS = -4.5 V, -1.6 A continuous drain current, and guaranteed operation down to V_GS = -1.2 V - optimized for low-voltage load switching in portable battery-powered devices.

For engineers reviewing the SI1499DH-T1-GE3 datasheet, SI1499DH-T1-GE3 pinout, SI1499DH-T1-GE3 application, or SI1499DH-T1-GE3 equivalent, this device is selected for ultra-low gate-threshold operation, halogen-free compliance, and compact 6-pin copper-leadframe thermal performance in space-constrained DC-DC and power-path designs.

Technical Context

This P-channel MOSFET uses trench-gate silicon technology to achieve sub-0.1 Ω on-resistance at gate voltages as low as -1.2 V, enabling direct control from 1.2 V logic rails without level-shifting. Its four-drain-terminal configuration in the SC-70 package reduces both conduction loss and junction-to-foot thermal resistance (R_thJF = 34 °C/W typ).

The device features a -0.8 V typical gate threshold voltage (V_GS(th)), low 10.5 nC total gate charge, and integrated body diode with 25 ns reverse recovery time - supporting fast, efficient synchronous rectification and bidirectional current handling in compact power switches.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-8 V - maximum drain-source blocking voltage for low-voltage rail isolation
R_DS(on) @ V_GS = -4.5 V	0.078 Ω - enables ≤125 mW conduction loss at 1.6 A, critical for thermal management in sealed enclosures
I_D (continuous)	-1.6 A - package-limited current rating at T_A = 25 °C, suitable for USB-powered peripherals and sensor modules
V_GS(th)	-0.8 V (typ) - ensures reliable turn-on with 1.2 V microcontroller GPIOs without external biasing
Q_g	10.5 nC - supports <15 ns turn-on delay with 1 Ω gate driver, minimizing switching loss in 1–2 MHz DC-DC stages
R_thJA	60 °C/W (typ) - achieved via copper leadframe and quad-drain layout, enabling 1 W dissipation on minimal PCB area
Body diode V_SD	-0.7 V (typ) at -2.4 A - reduces forward drop in reverse-current protection and OR-ing applications

Pinout & Package

SOT-363 (SC-70, 6-lead) package with copper leadframe, 2.0 mm × 2.1 mm footprint, 0.95 mm height, and four dedicated drain terminals for enhanced thermal and electrical performance.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 4, 5	Drain (D)	Four parallel drain connections reduce effective R_DS(on) and lower thermal resistance to PCB
3	Gate (G)	Single gate input with 9.5 Ω internal gate resistance - compatible with standard CMOS drivers
6	Source (S)	Common source node; ties to system ground or negative rail in high-side switch configurations

Key Features

Feature	Design Value
TrenchFET® architecture	Enables 0.078 Ω R_DS(on) at -4.5 V and 0.424 Ω at -1.2 V - supports direct 1.2 V logic interface
Copper leadframe SC-70	Reduces R_thJA by 51% vs. Alloy 42 version (60 vs. 124 °C/W), allowing higher power density in handheld form factors
Halogen-free & RoHS-compliant	Meets IEC 61249-2-21 and Directive 2002/95/EC - required for consumer electronics export to EU/China/Japan
Guaranteed V_GS = -1.2 V operation	Validated R_DS(on) = 0.424 Ω at -1.2 V ensures functional margin for aging batteries and low-V_CC brownout conditions
Quad-drain terminal layout	Provides 4× current-carrying capacity per drain bond wire and lowers parasitic inductance for clean switching waveforms

Applications

USB Power Delivery Switch	Smartphone Battery Protection
Use Scenario: Enables/disables VBUS path between USB-C port and internal PMIC during cable insertion/removal or fault detection. IC Role / Device Role / Timing Role: High-side P-channel load switch controlling 5 V rail with 1.2 V enable signal from baseband processor. Use Value: Guaranteed -1.2 V turn-on eliminates need for charge pump or level shifter, reducing BOM count and PCB area by 25%.	Use Scenario: Isolates main Li-ion battery from system during overvoltage, overtemperature, or short-circuit events detected by fuel gauge IC. IC Role / Device Role / Timing Role: Reverse-polarity-protected, low-R_DS(on) power path switch placed between battery anode and system ground return. Use Value: 0.078 Ω R_DS(on) limits voltage drop to <125 mV at 1.6 A, preserving runtime and avoiding false low-battery shutdowns.
Wearable Sensor Hub Power Gating	Bluetooth LE Peripheral Load Switch
Use Scenario: Powers down inertial measurement unit (IMU), ambient light sensor, and HRM subsystems during sleep mode to extend multi-day battery life. IC Role / Device Role / Timing Role: Low-leakage P-channel switch controlled by MCU GPIO with 100 nA I_GSS and -1 µA I_DSS at -8 V. Use Value: Sub-µA off-state leakage extends shelf life and preserves charge during 30-day storage without firmware intervention.	Use Scenario: Connects BLE SoC's 3.3 V supply to external antenna matching network and RF front-end only during active transmission bursts. IC Role / Device Role / Timing Role: Fast-switching P-MOSFET with 9 ns t_d(on) and 40 ns t_r to minimize supply activation delay and reduce duty-cycle overhead. Use Value: 10.5 nC Q_g allows full turn-on within 100 ns using standard 3.3 V GPIO, cutting RF startup latency by ≥35% vs. discrete alternatives.

USB Power Delivery Switch

Smartphone Battery Protection

Use Scenario: Enables/disables VBUS path between USB-C port and internal PMIC during cable insertion/removal or fault detection.

IC Role / Device Role / Timing Role: High-side P-channel load switch controlling 5 V rail with 1.2 V enable signal from baseband processor.

Use Value: Guaranteed -1.2 V turn-on eliminates need for charge pump or level shifter, reducing BOM count and PCB area by 25%.

Use Scenario: Isolates main Li-ion battery from system during overvoltage, overtemperature, or short-circuit events detected by fuel gauge IC.

IC Role / Device Role / Timing Role: Reverse-polarity-protected, low-R_DS(on) power path switch placed between battery anode and system ground return.

Use Value: 0.078 Ω R_DS(on) limits voltage drop to <125 mV at 1.6 A, preserving runtime and avoiding false low-battery shutdowns.

Wearable Sensor Hub Power Gating

Bluetooth LE Peripheral Load Switch

Use Scenario: Powers down inertial measurement unit (IMU), ambient light sensor, and HRM subsystems during sleep mode to extend multi-day battery life.

IC Role / Device Role / Timing Role: Low-leakage P-channel switch controlled by MCU GPIO with 100 nA I_GSS and -1 µA I_DSS at -8 V.

Use Value: Sub-µA off-state leakage extends shelf life and preserves charge during 30-day storage without firmware intervention.

Use Scenario: Connects BLE SoC's 3.3 V supply to external antenna matching network and RF front-end only during active transmission bursts.

IC Role / Device Role / Timing Role: Fast-switching P-MOSFET with 9 ns t_d(on) and 40 ns t_r to minimize supply activation delay and reduce duty-cycle overhead.

Use Value: 10.5 nC Q_g allows full turn-on within 100 ns using standard 3.3 V GPIO, cutting RF startup latency by ≥35% vs. discrete alternatives.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel load switch applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si1309EDH-T1-GE3	Same SOT-363 package, -12 V V_DS, 0.055 Ω R_DS(on) @ -4.5 V, but requires -1.5 V min V_GS for guaranteed operation	Better R_DS(on) at higher gate drive; not rated for 1.2 V logic interface	Select when system uses ≥1.5 V GPIO and needs lower conduction loss at -12 V rails
DMN2053LFG-7	6-pin SOT-563 package, -20 V V_DS, 0.095 Ω R_DS(on) @ -4.5 V, 1.2 V logic-compatible, but R_thJA = 120 °C/W (Alloy 42)	Higher voltage rating and same logic compatibility, but 2× worse thermal resistance limits power handling	Select when board space permits larger thermal pads and -20 V blocking is required

Compared with SI1499DH-T1-GE3, Si1309EDH-T1-GE3 offers lower on-resistance but lacks 1.2 V gate drive assurance, while DMN2053LFG-7 provides wider voltage range but sacrifices thermal performance - making SI1499DH-T1-GE3 optimal for 1.2 V–5 V portable systems where size, efficiency, and guaranteed low-V_GS operation are jointly critical.

Availability

SI1499DH-T1-GE3 is available at Aetrix Electronics and suitable for USB power delivery, smartphone battery protection, wearable sensor hub power gating, and Bluetooth LE peripheral load switching requiring stable component supply across high-mix, low-volume production runs.

Supply support for SI1499DH-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and miniaturization.

The Si14xxDH family delivers ultra-low-threshold P-channel MOSFETs in copper-leadframe SC-70 packages, engineered specifically for space-constrained, battery-sensitive applications in mobile, wearables, and IoT edge devices.

FAQ

What is the maximum continuous drain current rating for SI1499DH-T1-GE3 at 70 °C ambient temperature?

The SI1499DH-T1-GE3 has a continuous drain current rating of -1.6 A at T_A = 70 °C, as specified in the Absolute Maximum Ratings table. This value is package-limited and applies under steady-state conditions with proper PCB copper area; derating is required above 70 °C ambient per the current derating curve in Figure 5 of the datasheet.

Does SI1499DH-T1-GE3 support true 1.2 V gate drive, and what is its R_DS(on) at that voltage?

Yes, SI1499DH-T1-GE3 is explicitly guaranteed for operation at V_GS = -1.2 V, with R_DS(on) = 0.424 Ω measured at I_D = -0.100 A. This specification is validated per the product summary table and confirmed in the "On-Resistance vs. Gate-to-Source Voltage" characteristic curve on page 4 of the datasheet.

What is the thermal resistance from junction to ambient (R_thJA) for SI1499DH-T1-GE3 on a standard test board?

The SI1499DH-T1-GE3 exhibits a typical junction-to-ambient thermal resistance of 60 °C/W (maximum 80 °C/W) when mounted on a 1" × 1" FR4 board, as stated in the Thermal Resistance Ratings table. This value reflects the benefit of its copper leadframe and quad-drain construction.

Is SI1499DH-T1-GE3 halogen-free, and which standard does it meet?

Yes, SI1499DH-T1-GE3 is halogen-free according to IEC 61249-2-21, as confirmed in the Features section of the datasheet. The "-GE3" suffix explicitly denotes lead-free and halogen-free compliance, distinct from the "-E3" variant which is lead-free only.

What is the total gate charge (Q_g) of SI1499DH-T1-GE3, and how does it impact switching speed?

The SI1499DH-T1-GE3 has a typical total gate charge of 10.5 nC at V_DS = -4 V and V_GS = -4.5 V. With a 1 Ω gate resistor and -4.5 V drive, this enables a turn-on delay time of 9 ns and rise time of 40 ns - supporting efficient operation in high-frequency DC-DC converters up to 2 MHz.

SI1499DH-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: 6-TSSOP, SC-88, SOT-363

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 8 V

Current - Continuous Drain (Id) @ 25°C:: 1.6A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 1.2V, 4.5V

Rds On (Max) @ Id, Vgs:: 78mOhm @ 2A, 4.5V

Vgs(th) (Max) @ Id:: 800mV @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 16 nC @ 4.5 V

Vgs (Max):: ±5V

Input Capacitance (Ciss) (Max) @ Vds:: 650 pF @ 4 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta), 2.78W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SC-70-6

SI1499DH-T1-GE3 FAQ

1.How can I place an order for SI1499DH-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI1499DH-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI1499DH-T1-GE3 reliable?

The price and inventory of SI1499DH-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI1499DH-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SI1499DH-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI1499DH-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI1499DH-T1-GE3?

SI1499DH-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI1499DH-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI1499DH-T1-GE3?

For technical support, including SI1499DH-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI1499DH-T1-GE3 requirements.

6.How does Aetrix verify that SI1499DH-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SI1499DH-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI1499DH-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SI1499DH-T1-GE3?

All SI1499DH-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI1499DH-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI1499DH-T1-GE3 part is unused and in its original packaging.

Return procedure for SI1499DH-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-11 Comparator Circuit: Voltage Thresholds, Op-Amp Differences, LM393 and Practical Design

Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.

2026-09-10 Schmitt Trigger Explained: Hysteresis, Circuits, Inverters and Applications

Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…

2026-09-09 Counterfeit Electronic Components: How to Detect, Authenticate, and Test Suspect Parts

Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

PRODUCT

PHONE

USER

Comparison List

Clear All