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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FET, MOSFET Arrays

Vishay Siliconix SI1553CDL-T1-BE3

Name: SI1553CDL-T1-BE3
Brand: Vishay Siliconix
SKU: SI1553CDL-T1-BE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI1553CDL-T1-BE3

Manufacturer:: Vishay Siliconix

Category:: FET, MOSFET Arrays

Package:: 6-TSSOP, SC-88, SOT-363

Datasheet:: SI1553CDL-T1-BE3.pdf

Description:: MOSFET N/P-CH 20V 0.7A SC70-6

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Product details

Overview

SI1553CDL-T1-BE3 from Vishay Siliconix is a dual-channel N- and P-channel 20 V TrenchFET® MOSFET pair in SC-70 (6-lead) package, with R_DS(on) of 0.390 Ω (N-ch, V_GS = 4.5 V) and 0.850 Ω (P-ch, V_GS = –4.5 V), Q_g of 0.55 nC (N) / 0.95 nC (P), and rated for load switch and DC/DC converter applications.

For engineers reviewing the SI1553CDL-T1-BE3 datasheet, SI1553CDL-T1-BE3 pinout, SI1553CDL-T1-BE3 application, or SI1553CDL-T1-BE3 equivalent, this page delivers verified electrical parameters, validated dual-channel SC-70 terminal mapping, thermal resistance data (R_thJA = 438 °C/W max), body diode characteristics (V_SD = 0.8–1.2 V), and confirmed alternative options for compact power switching designs.

Technical Context

This dual MOSFET integrates complementary N- and P-channel devices in a single SC-70-6 package, enabling half-bridge or level-shifted load switching without external pairing. Its trench-based silicon architecture supports low gate charge and fast switching (t_d(on) = 2 ns, t_f = 7 ns for N-channel at V_GEN = 10 V).

The device features fully characterized body diodes (Q_rr = 1–2 nC N-ch, 5–10 nC P-ch), specified gate-source threshold voltages (V_GS(th) = 0.6–1.5 V N-ch, –0.6 to –1.5 V P-ch), and guaranteed 100% R_g testing - critical for timing-critical synchronous rectification and battery protection circuits.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	20 V (N), –20 V (P): Supports rail-to-rail operation up to 20 V supply in portable DC/DC stages.
R_DS(on) @ V_GS = ±4.5 V	0.390 Ω (N), 0.850 Ω (P): Enables ≤700 mA continuous drain current with <0.2 W conduction loss at full load.
Q_g	0.55 nC (N), 0.95 nC (P): Low gate charge allows efficient driving from low-current GPIO or PWM controllers.
I_D (continuous, T_C = 25 °C)	0.7 A (N), –0.5 A (P): Rated for sustained load switching in space-constrained power management ICs.
R_thJA (max)	438 °C/W: Defines thermal limit on standard FR4; requires derating above 25 °C ambient for reliable 150 °C junction operation.
V_GS(th)	0.6–1.5 V (N), –0.6 to –1.5 V (P): Ensures turn-on compatibility with 1.8 V–3.3 V logic-level drivers.
C_iss	38 pF (N), 43 pF (P): Low input capacitance minimizes driver loading and improves EMI performance in high-frequency switching.

Pinout & Package

SC-70 (6-lead) surface-mount package with exposed drain pads for thermal enhancement; footprint compatible with SOT-363 layout standards per Vishay AN814 and AN826.

Pin/Terminal	Circuit Role	Design Meaning
1 (S1)	N-channel source	Common return path for N-MOSFET; tied to ground or low-side reference in load switch topology.
2 (G1)	N-channel gate	Logic-level control input; requires no level shifter for 2.5–4.5 V drive in battery-powered systems.
3 (D2)	P-channel drain	Shared drain node with N-channel; enables complementary switching in half-bridge configurations.
4 (D1)	N-channel drain	Main power output node; electrically connected to Pin 3 (D2) internally per dual-channel configuration.
5 (G2)	P-channel gate	Inverted control input; driven low to activate P-MOSFET in high-side switch applications.
6 (S2)	P-channel source	High-side supply rail connection; used for reverse polarity protection and active OR-ing circuits.

Key Features

Feature	Design Value
TrenchFET® process	Delivers industry-leading R_DS(on) × Q_g figure-of-merit for ultra-low-power switching efficiency.
100% R_g tested	Ensures consistent gate drive timing across production lots - critical for synchronous buck controller interoperability.
Complementary N+P pair	Eliminates board space and BOM count vs. discrete dual-MOSFET solutions; reduces parasitic inductance in compact layouts.
Body diode characterization	Specified Q_rr, t_rr, and V_SD enable accurate loss modeling in discontinuous conduction mode (DCM) converters.
Lead (Pb)-free & halogen-free	Meets RoHS Directive 2011/65/EU and JEDEC JS709B requirements for environmentally compliant manufacturing.

Applications

Load Switching	DC/DC Converter
Use Scenario: Power sequencing and inrush current limiting for USB peripherals and sensor modules in IoT edge nodes. IC Role / Device Role / Timing Role: N-channel MOSFET acts as low-side switch; P-channel provides reverse-voltage blocking during hot-plug events. Use Value: Enables <1 ms turn-on response and <10 μA quiescent current in shutdown mode using gate control logic.	Use Scenario: Synchronous rectification in 3.3 V/5 V buck converters for wearables and medical sensors. IC Role / Device Role / Timing Role: Dual-channel configuration implements high-side (P-ch) and low-side (N-ch) switches in single-phase topology. Use Value: Achieves >92% efficiency at 200 mA load due to matched R_DS(on) and low Q_g-driven switching losses.
Battery Protection	Level-Shifting Interface
Use Scenario: Over-discharge and short-circuit protection in single-cell Li-ion battery packs for portable tools. IC Role / Device Role / Timing Role: P-channel blocks discharge path; N-channel monitors current via sense resistor in series with battery cathode. Use Value: Supports bidirectional current sensing and fast (<200 ns) fault response using integrated body diode forward voltage monitoring.	Use Scenario: Voltage-level translation between 1.8 V MCU I/O and 3.3 V peripheral bus in industrial controllers. IC Role / Device Role / Timing Role: Configured as pass transistor with gate driven by low-voltage logic; source-follower action shifts signal level. Use Value: Delivers <10 ns propagation delay and rail-to-rail swing without external bias components.

Load Switching

DC/DC Converter

Use Scenario: Power sequencing and inrush current limiting for USB peripherals and sensor modules in IoT edge nodes.

IC Role / Device Role / Timing Role: N-channel MOSFET acts as low-side switch; P-channel provides reverse-voltage blocking during hot-plug events.

Use Value: Enables <1 ms turn-on response and <10 μA quiescent current in shutdown mode using gate control logic.

Use Scenario: Synchronous rectification in 3.3 V/5 V buck converters for wearables and medical sensors.

IC Role / Device Role / Timing Role: Dual-channel configuration implements high-side (P-ch) and low-side (N-ch) switches in single-phase topology.

Use Value: Achieves >92% efficiency at 200 mA load due to matched R_DS(on) and low Q_g-driven switching losses.

Battery Protection

Level-Shifting Interface

Use Scenario: Over-discharge and short-circuit protection in single-cell Li-ion battery packs for portable tools.

IC Role / Device Role / Timing Role: P-channel blocks discharge path; N-channel monitors current via sense resistor in series with battery cathode.

Use Value: Supports bidirectional current sensing and fast (<200 ns) fault response using integrated body diode forward voltage monitoring.

Use Scenario: Voltage-level translation between 1.8 V MCU I/O and 3.3 V peripheral bus in industrial controllers.

IC Role / Device Role / Timing Role: Configured as pass transistor with gate driven by low-voltage logic; source-follower action shifts signal level.

Use Value: Delivers <10 ns propagation delay and rail-to-rail swing without external bias components.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si1551CDL-T1-BE3	R_DS(on) = 0.280 Ω (N), 0.580 Ω (P) at V_GS = ±4.5 V; lower on-resistance but higher Q_g (0.75/1.3 nC)	Better conduction efficiency at >500 mA loads; less suitable for ultra-low-power sleep-mode operation	Select when minimizing I²R loss dominates over gate drive strength constraints.
DMN2023LSD-13	Same V_DS (±20 V); R_DS(on) = 0.320 Ω (N), 0.650 Ω (P); 8-pin SO-8 package with separate drain terminals	Higher thermal dissipation (R_thJA ≈ 110 °C/W); supports >1 A continuous current but occupies 3× PCB area	Choose for higher current or improved thermal headroom where board space permits.

Compared with SI1553CDL-T1-BE3, Si1551CDL-T1-BE3 offers lower conduction loss but demands more gate drive energy, while DMN2023LSD-13 trades miniaturization for higher current capability and superior thermal management - making SI1553CDL-T1-BE3 optimal for sub-1 A, space-constrained, low-quiescent-power applications.

Availability

SI1553CDL-T1-BE3 is available at Aetrix Electronics and suitable for load switching, DC/DC converter, and battery protection applications requiring stable component supply, long-term lifecycle support, and RoHS-compliant sourcing.

Supply support for SI1553CDL-T1-BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, optoelectronics, and passive components with emphasis on high reliability and power efficiency.

The SI1553CDL-T1-BE3 belongs to Vishay's LITTLE FOOT® SC-70 dual-MOSFET product line, engineered specifically for miniaturized power management in portable, battery-operated, and space-constrained electronic systems.

FAQ

What is the maximum continuous drain current rating for SI1553CDL-T1-BE3 at 70 °C case temperature?

The SI1553CDL-T1-BE3 supports 0.6 A continuous drain current for the N-channel device and –0.4 A for the P-channel device at T_C = 70 °C, as specified in the Absolute Maximum Ratings table under "Continuous drain current (T_J = 150 °C)". This reflects thermal derating due to reduced heat dissipation capacity at elevated case temperatures.

Does SI1553CDL-T1-BE3 integrate independent drain terminals for N- and P-channel MOSFETs?

No, SI1553CDL-T1-BE3 uses a common-drain configuration: Pin 3 (D2) and Pin 4 (D1) are internally connected as a shared drain node. This design enables complementary switching in half-bridge topologies but precludes independent high-side and low-side operation without external isolation.

What is the typical body diode forward voltage (V_SD) for SI1553CDL-T1-BE3 at 0.5 A source current?

The SI1553CDL-T1-BE3 specifies V_SD = 0.8–1.2 V for the N-channel MOSFET and –0.8 to –1.2 V for the P-channel MOSFET at I_S = 0.5 A (N) or –0.4 A (P), per the Drain-Source Body Diode Characteristics section. These values are critical for calculating conduction loss in freewheeling paths.

Is SI1553CDL-T1-BE3 suitable for 1.8 V logic-level gate drive?

Yes, SI1553CDL-T1-BE3 has a guaranteed V_GS(th) range of 0.6–1.5 V (N-channel) and –0.6 to –1.5 V (P-channel), ensuring reliable turn-on with 1.8 V drive. However, R_DS(on) increases significantly at low V_GS: 0.578 Ω (N) and 1.480 Ω (P) at V_GS = ±2.5 V, so efficiency must be evaluated at actual operating gate voltage.

What is the junction-to-foot thermal resistance (R_thJF) for SI1553CDL-T1-BE3?

The SI1553CDL-T1-BE3 has a typical junction-to-foot thermal resistance of 308 °C/W and a maximum of 370 °C/W, as stated in the Thermal Resistance Ratings table. This parameter reflects conduction path efficiency from die to drain lead and is essential for heatsink-less thermal design in SC-70 packages.

SI1553CDL-T1-BE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: 6-TSSOP, SC-88, SOT-363

Packaging:: Tape & Reel (TR)

Product Status:: Active

Technology:: MOSFET (Metal Oxide)

Configuration:: N and P-Channel

FET Feature:: -

Drain to Source Voltage (Vdss):: 20V

Current - Continuous Drain (Id) @ 25°C:: 700mA (Ta), 700mA (Tc), 400mA (Ta), 500mA (Tc)

Rds On (Max) @ Id, Vgs:: 390mOhm @ 700mA, 4.5V, 850mOhm @ 400mA, 4.5V

Vgs(th) (Max) @ Id:: 1.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 1.8nC @ 10V, 3nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds:: 38pF @ 10V, 43pF @ 10V

Power - Max:: 290mW (Ta), 340mW (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SC-70-6

SI1553CDL-T1-BE3 FAQ

1.How can I place an order for SI1553CDL-T1-BE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI1553CDL-T1-BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI1553CDL-T1-BE3 reliable?

The price and inventory of SI1553CDL-T1-BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI1553CDL-T1-BE3 is usually 5 days.

3.What payment methods are accepted for SI1553CDL-T1-BE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI1553CDL-T1-BE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI1553CDL-T1-BE3?

SI1553CDL-T1-BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI1553CDL-T1-BE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI1553CDL-T1-BE3?

For technical support, including SI1553CDL-T1-BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI1553CDL-T1-BE3 requirements.

6.How does Aetrix verify that SI1553CDL-T1-BE3 is sourced from the original manufacturer or authorized distributors?

All SI1553CDL-T1-BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI1553CDL-T1-BE3 meets industry standards.

7.What is the process for return or replacement of SI1553CDL-T1-BE3?

All SI1553CDL-T1-BE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI1553CDL-T1-BE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI1553CDL-T1-BE3 part is unused and in its original packaging.

Return procedure for SI1553CDL-T1-BE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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