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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FET, MOSFET Arrays

Vishay Siliconix SI1553CDL-T1-GE3

Name: SI1553CDL-T1-GE3
Brand: Vishay Siliconix
SKU: SI1553CDL-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI1553CDL-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FET, MOSFET Arrays

Package:: 6-TSSOP, SC-88, SOT-363

Datasheet:: SI1553CDL-T1-GE3.pdf

Description:: MOSFET N/P-CH 20V 0.7A SC70-6

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Product details

Overview

SI1553CDL-T1-GE3 from Vishay Siliconix is a dual-channel N- and P-channel 20 V TrenchFET® power MOSFET in SC-70 (6-lead) package, with R_DS(on) of 0.390 Ω (N-ch, V_GS = 4.5 V) and 0.850 Ω (P-ch, V_GS = −4.5 V), Q_g of 0.55 nC (N-ch) and 0.95 nC (P-ch), and rated for load switch and DC/DC converter applications.

For engineers reviewing the SI1553CDL-T1-GE3 datasheet, SI1553CDL-T1-GE3 pinout, SI1553CDL-T1-GE3 application, or SI1553CDL-T1-GE3 equivalent, this dual-channel complementary MOSFET supports low-voltage, space-constrained switching where discrete N+P pairing with matched thermal behavior and compact footprint is required.

Technical Context

The SI1553CDL-T1-GE3 integrates an N-channel and P-channel MOSFET in a single SC-70 (6-lead) package with shared thermal path and symmetrical layout. Its gate threshold voltages are ±0.6 V to ±1.5 V, enabling logic-level drive from 2.5 V–4.5 V controllers. The device uses TrenchFET® technology for low R_DS(on) and fast switching with t_r/t_f as low as 9 ns/7 ns (P-ch) and 14 ns/7 ns (N-ch) under 1 Ω gate drive.

It features 100 % R_g testing, body diodes with V_SD = 0.8–1.2 V (N-ch) and −0.8 to −1.2 V (P-ch), and reverse recovery time t_rr of 8–15 ns (N-ch) and 12–20 ns (P-ch). Thermal resistance is R_thJA = 438 °C/W max (T_J–T_A) and R_thJF = 370 °C/W max (T_J–foot), optimized for surface-mount operation on FR4 boards.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	20 V (N-ch), −20 V (P-ch): supports rail-to-rail switching in 3.3 V/5 V systems without avalanche stress
R_DS(on) @ V_GS = ±4.5 V	0.390 Ω (N-ch), 0.850 Ω (P-ch): enables ≤700 mA continuous drain current with <275 mW conduction loss at full load
Q_g	0.55 nC (N-ch), 0.95 nC (P-ch): allows efficient 1–3 MHz switching with minimal gate driver power demand
I_D (continuous, T_C = 25 °C)	0.7 A (N-ch), −0.5 A (P-ch): suitable for low-power load switching and synchronous rectification in micro-converters
t_r/t_f	14/7 ns (N-ch), 9/7 ns (P-ch) @ 1 Ω drive: reduces switching losses and EMI in high-frequency DC/DC stages
R_thJA	438 °C/W max: limits junction temperature rise to ≤130 °C at 290 mW dissipation on standard 1" × 1" FR4 board

Pinout & Package

SC-70 (6-lead) package: 2.0 mm × 2.1 mm × 0.95 mm body, Alloy 42 leadframe, surface-mount, RoHS-compliant, halogen-free.

Pin/Terminal	Circuit Role	Design Meaning
1 (S1)	N-channel source	Common source node for N-MOSFET; tied to ground or low-side return path in half-bridge/load-switch topologies
2 (G1)	N-channel gate	Logic-level input controlling N-MOSFET turn-on; requires no level-shifting for 2.5–4.5 V MCU outputs
3 (D2)	P-channel drain	Shared drain terminal with N-channel; forms common drain node for complementary pair configuration
4 (D1)	N-channel drain	Primary output node for N-MOSFET; connects to load or switching node in buck/synchronous rectifier circuits
5 (G2)	P-channel gate	Inverted logic input for P-MOSFET; driven low to enable high-side switch in load-switch applications
6 (S2)	P-channel source	Connects to positive rail; serves as high-side supply reference for P-MOSFET in high-side switch configurations

Key Features

Feature	Design Value
TrenchFET® process technology	Delivers industry-leading R_DS(on) per mm² for ultra-compact SC-70 footprint while maintaining ruggedness
100 % R_g tested	Ensures consistent gate drive timing and eliminates outliers in critical high-speed switching applications
Complementary N+P pair in single package	Reduces PCB area by >40 % vs. discrete SOT-363 solutions and improves thermal coupling between channels
Low gate charge asymmetry	Q_g ratio (P/N) ≈ 1.7 enables balanced dead-time control in half-bridge drivers without complex gate biasing
Body diode with t_rr < 20 ns	Minimizes reverse recovery loss during synchronous rectification and prevents shoot-through in bidirectional switches

Applications

Battery Load Switch	Synchronous Buck Converter
Use Scenario: Enabling/disabling power to Bluetooth LE sensor modules or wearables during sleep mode to extend battery life. IC Role / Device Role / Timing Role: N-channel MOSFET acts as low-side switch; P-channel provides reverse-current blocking when off. Use Value: R_DS(on) < 0.4 Ω ensures <15 mW dropout at 200 mA load, preserving >99 % system efficiency in standby.	Use Scenario: High-efficiency 3.3 V output stage in portable USB-C PD adapters using 5 V input. IC Role / Device Role / Timing Role: N-channel serves as synchronous rectifier; P-channel used in active-clamp or auxiliary control path. Use Value: Low Q_g and fast t_r/t_f reduce switching loss by ~35 % vs. Schottky diode replacement at 2 MHz operation.
USB Port Power Management	Industrial Sensor Interface
Use Scenario: Overvoltage/overcurrent protected 5 V USB port on programmable logic controller (PLC) I/O module. IC Role / Device Role / Timing Role: P-channel controls high-side 5 V rail; N-channel monitors current via sense resistor in source path. Use Value: Matched thermal tracking between channels enables accurate current limiting without external temperature compensation.	Use Scenario: Isolated analog front-end powering 4–20 mA loop transmitters in hazardous-area field devices. IC Role / Device Role / Timing Role: N-channel drives low-side current sink; P-channel enables fail-safe shutdown of analog supply rails. Use Value: −55 to +150 °C operating range and 100 % R_g test ensure reliability in extended industrial temperature environments.

Battery Load Switch

Synchronous Buck Converter

Use Scenario: Enabling/disabling power to Bluetooth LE sensor modules or wearables during sleep mode to extend battery life.

IC Role / Device Role / Timing Role: N-channel MOSFET acts as low-side switch; P-channel provides reverse-current blocking when off.

Use Value: R_DS(on) < 0.4 Ω ensures <15 mW dropout at 200 mA load, preserving >99 % system efficiency in standby.

Use Scenario: High-efficiency 3.3 V output stage in portable USB-C PD adapters using 5 V input.

IC Role / Device Role / Timing Role: N-channel serves as synchronous rectifier; P-channel used in active-clamp or auxiliary control path.

Use Value: Low Q_g and fast t_r/t_f reduce switching loss by ~35 % vs. Schottky diode replacement at 2 MHz operation.

USB Port Power Management

Industrial Sensor Interface

Use Scenario: Overvoltage/overcurrent protected 5 V USB port on programmable logic controller (PLC) I/O module.

IC Role / Device Role / Timing Role: P-channel controls high-side 5 V rail; N-channel monitors current via sense resistor in source path.

Use Value: Matched thermal tracking between channels enables accurate current limiting without external temperature compensation.

Use Scenario: Isolated analog front-end powering 4–20 mA loop transmitters in hazardous-area field devices.

IC Role / Device Role / Timing Role: N-channel drives low-side current sink; P-channel enables fail-safe shutdown of analog supply rails.

Use Value: −55 to +150 °C operating range and 100 % R_g test ensure reliability in extended industrial temperature environments.

Equivalent & Alternatives

The following parts are listed as comparable options for similar complementary dual-MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si1551CDL-T1-GE3	R_DS(on) = 0.250 Ω (N-ch) / 0.550 Ω (P-ch) at V_GS = ±4.5 V; higher ID rating (1.0 A / −0.7 A)	Better suited for 1 A load-switch or 3 MHz DC/DC where lower conduction loss is prioritized over cost	Select when thermal margin is constrained and board area allows same SC-70 footprint
DMC2038LVT-7	Lower V_DS (12 V), smaller Q_g (0.35 nC / 0.55 nC), but reduced voltage headroom and no 100 % R_g test	Optimized for 1.8–3.3 V logic domains only; unsuitable for 5 V bus protection or 20 V transient tolerance	Choose only for ultra-low-voltage, high-density designs where 12 V rating is sufficient and gate drive strength is critical

Compared with SI1553CDL-T1-GE3, Si1551CDL-T1-GE3 delivers 36 % lower R_DS(on) for improved efficiency at higher loads, while DMC2038LVT-7 trades voltage robustness for faster switching in sub-3.3 V systems - making SI1553CDL-T1-GE3 the optimal balance of 20 V rating, thermal symmetry, and production-tested gate consistency.

Availability

SI1553CDL-T1-GE3 is available at Aetrix Electronics and suitable for battery-powered IoT nodes, USB-C power delivery accessories, and industrial sensor interfaces requiring stable component supply across multi-year production cycles.

Supply support for SI1553CDL-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, optoelectronics, and passive components with emphasis on power efficiency and reliability.

The SI1553CDL-T1-GE3 belongs to Vishay's LITTLE FOOT® SC-70 dual-MOSFET family, engineered for space-constrained, low-power switching applications where integrated complementary pairs improve layout simplicity and thermal predictability.

FAQ

What is the maximum continuous drain current for each channel of the SI1553CDL-T1-GE3?

The SI1553CDL-T1-GE3 supports 0.7 A continuous drain current for the N-channel MOSFET and −0.5 A for the P-channel MOSFET at T_C = 25 °C. Derating applies above 25 °C case temperature, with 0.6 A / −0.4 A at T_C = 70 °C. These values reflect actual silicon capability under steady-state thermal conditions on a standard FR4 board.

Does the SI1553CDL-T1-GE3 require gate resistors for reliable operation?

The SI1553CDL-T1-GE3 does not mandate external gate resistors for basic switching, but a 1–10 Ω series resistor is recommended to dampen ringing and control dV/dt during fast transitions. Gate resistance impacts t_r/t_f and EMI; typical evaluation uses 1 Ω for characterization. The device's specified R_g (1.5–14.4 Ω N-ch, 2.1–20.6 Ω P-ch) is intrinsic and fully tested.

Can the SI1553CDL-T1-GE3 be used in a synchronous rectifier configuration?

Yes, the SI1553CDL-T1-GE3 is suitable for synchronous rectification in low-voltage DC/DC converters. Its N-channel MOSFET offers low R_DS(on) and fast t_r/t_f, while the integrated P-channel can serve as active clamp or auxiliary control element. Body diode t_rr (8–15 ns) and Q_rr (1–2 nC) are characterized for clean commutation without excessive recovery loss.

What is the thermal resistance from junction to ambient for the SI1553CDL-T1-GE3?

The SI1553CDL-T1-GE3 has a maximum junction-to-ambient thermal resistance (R_thJA) of 438 °C/W under standard test conditions (1" × 1" FR4 board, 2-layer copper). Typical R_thJA is 365 °C/W. This value assumes surface-mount assembly with recommended pad pattern; performance improves ~20 % with enhanced copper area.

Is the SI1553CDL-T1-GE3 pin-compatible with other SC-70 dual-MOSFETs like the Si1551CDL-T1-GE3?

Yes, the SI1553CDL-T1-GE3 is pin-compatible with Si1551CDL-T1-GE3 and other Vishay SC-70 dual-MOSFETs sharing the same SOT-363 pinout (1=S1, 2=G1, 3=D2, 4=D1, 5=G2, 6=S2). Mechanical footprint, solder pad pattern, and terminal assignment are identical - enabling drop-in replacement where electrical specs meet design requirements.

SI1553CDL-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: 6-TSSOP, SC-88, SOT-363

Packaging:: Tape & Reel (TR)

Product Status:: Active

Technology:: MOSFET (Metal Oxide)

Configuration:: N and P-Channel

FET Feature:: Logic Level Gate

Drain to Source Voltage (Vdss):: 20V

Current - Continuous Drain (Id) @ 25°C:: 700mA, 500mA

Rds On (Max) @ Id, Vgs:: 390mOhm @ 700mA, 4.5V

Vgs(th) (Max) @ Id:: 1.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 1.8nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds:: 38pF @ 10V

Power - Max:: 340mW

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SC-70-6

SI1553CDL-T1-GE3 FAQ

1.How can I place an order for SI1553CDL-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI1553CDL-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI1553CDL-T1-GE3 reliable?

The price and inventory of SI1553CDL-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI1553CDL-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SI1553CDL-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI1553CDL-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI1553CDL-T1-GE3?

SI1553CDL-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI1553CDL-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI1553CDL-T1-GE3?

For technical support, including SI1553CDL-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI1553CDL-T1-GE3 requirements.

6.How does Aetrix verify that SI1553CDL-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SI1553CDL-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI1553CDL-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SI1553CDL-T1-GE3?

All SI1553CDL-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI1553CDL-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI1553CDL-T1-GE3 part is unused and in its original packaging.

Return procedure for SI1553CDL-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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