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Vishay Siliconix SI1967DH-T1-BE3
- Part No.:
- SI1967DH-T1-BE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FET, MOSFET Arrays
- Package:
- 6-TSSOP, SC-88, SOT-363
- Datasheet:
-
SI1967DH-T1-BE3.pdf
- Description:
- MOSFET 2P-CH 20V 1A SC70-6
- Quantity:
- Payment:
- Shipping:
Inventory:7,019
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Product details
Overview
SI1967DH-T1-BE3 from Vishay Siliconix is a dual P-channel 20 V MOSFET in SOT-363 (SC-70) package, rated for -1.3 A continuous drain current at TC = 25 °C, with RDS(on) = 0.490 Ω at VGS = -4.5 V and Qg = 1.6 nC (typ.), designed for compact load switching in portable power rails.
For engineers reviewing the SI1967DH-T1-BE3 datasheet, SI1967DH-T1-BE3 pinout, SI1967DH-T1-BE3 application, or SI1967DH-T1-BE3 equivalent, this device supports low-voltage logic-level gate drive, PWM-optimized switching, and dual independent channel control in space-constrained battery-powered systems.
Technical Context
This dual P-channel MOSFET uses Vishay's TrenchFET® process to achieve low on-resistance and fast switching with minimal gate charge. Its symmetric dual-die structure enables independent source-drain paths per channel, each supporting -20 V VDS, ±8 V VGS, and body diode conduction with VSD = -0.8 V at -0.9 A.
The device operates across -55 °C to +150 °C junction temperature, features halogen-free construction per IEC 61249-2-21, and delivers thermal performance of RthJF = 80 °C/W (typ.) to drain foot - optimized for copper-leadframe SC-70 packaging without external heatsinking.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -20 V - Maximum reverse-blocking voltage per channel, suitable for 12 V and lower rail isolation |
| RDS(on) @ VGS = -4.5 V | 0.490 Ω - Enables <1.3 W conduction loss at -1.3 A, critical for thermally constrained PCBs |
| ID (continuous, TC = 25 °C) | -1.3 A - Package-limited current rating defining safe DC operation with adequate copper area |
| Qg @ VGS = -4.5 V | 1.6 nC - Low gate charge reduces driver power and enables efficient 1–2 MHz PWM switching |
| VGS(th) | -0.4 to -1.0 V - Logic-compatible threshold enabling direct interface with 1.8 V/2.5 V/3.3 V GPIO |
| RthJF (typ.) | 80 °C/W - Junction-to-foot thermal resistance confirms effective heat transfer through drain leads to PCB copper |
| Ciss | 110 pF - Input capacitance determines gate drive strength requirement and EMI behavior |
Pinout & Package
SOT-363 (SC-70, 6-lead) package with exposed drain pads for thermal enhancement; dimensions: 2.00 mm × 2.10 mm × 1.00 mm (L × W × H), copper leadframe construction.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (S1) | Source of Channel 1 | Low-side return path for first P-MOSFET; tied to local ground or load reference |
| 2 (G1) | Gate of Channel 1 | Logic-level input controlling turn-on of first channel; requires no level-shifting for 1.8–3.3 V drivers |
| 3 (D2) | Drain of Channel 2 | High-side connection point for second P-MOSFET; electrically connected to exposed drain pad |
| 4 (D1) | Drain of Channel 1 | High-side connection point for first P-MOSFET; shares thermal path with D2 via common drain footprint |
| 5 (G2) | Gate of Channel 2 | Independent logic-level input for second channel; enables dual-rail or redundant switching control |
| 6 (S2) | Source of Channel 2 | Low-side return path for second P-MOSFET; isolated from S1 unless externally connected |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® Power MOSFET architecture | Delivers 0.490 Ω RDS(on) at -4.5 V in 2.0 mm × 2.1 mm footprint - 30% lower on-resistance than comparable Alloy 42 SC-70 devices |
| PWM-optimized switching | 1.6 nC total gate charge and 12 ns turn-on delay enable clean 1–2 MHz pulse-width modulation without excessive driver loss |
| Copper leadframe construction | Reduces RthJF to 80 °C/W (typ.) - improves thermal margin by 34% vs. Alloy 42 versions under identical PCB layout |
| Halogen-free & RoHS-compliant | Fully compliant with IEC 61249-2-21 and Directive 2002/95/EC - meets environmental requirements for consumer and medical portable devices |
| Independent dual-channel topology | Two fully isolated P-MOSFETs share one package but support separate gate control and source routing - ideal for dual-battery switchover or mirrored load paths |
Applications
| USB OTG Power Switching | Smartphone Battery Protection |
|---|---|
Use Scenario: Bidirectional USB On-The-Go (OTG) power arbitration between host and peripheral modes, requiring automatic VBUS path selection. IC Role / Device Role / Timing Role: Dual P-MOSFET acts as back-to-back load switch to isolate VBUS lines and prevent backfeed during mode transitions. Use Value: 0.490 Ω RDS(on) limits voltage drop to <0.64 V at 1.3 A, preserving USB 2.0 compliance while enabling sub-20 ns switching for glitch-free handover. |
Use Scenario: Secondary overcurrent and short-circuit protection for Li-ion battery packs in smartphones, supplementing primary fuel gauge ICs. IC Role / Device Role / Timing Role: Each channel independently controls charging/discharging paths, blocking fault currents within microseconds. Use Value: -20 V VDS withstands battery surge transients up to 18 V; body diode VSD = -0.8 V ensures low-loss reverse conduction during cell balancing. |
| Wearable Sensor Power Gating | Bluetooth LE Peripheral Rail Control |
Use Scenario: Dynamic power gating of MEMS accelerometers and optical heart-rate sensors in fitness trackers to extend battery life beyond 7 days. IC Role / Device Role / Timing Role: One channel switches main sensor VDD rail; second channel isolates I²C pull-ups to reduce standby leakage. Use Value: VGS(th) down to -0.4 V guarantees reliable turn-on from 1.8 V microcontroller GPIO, eliminating need for external level shifters. |
Use Scenario: Controlled enable/disable of Bluetooth Low Energy (BLE) radio subsystems during advertising/sleep cycles in hearables and beacons. IC Role / Device Role / Timing Role: Dual-channel configuration powers BLE SoC core and RF front-end separately, minimizing wake-up latency and quiescent current. Use Value: 1.6 nC Qg allows full rail enable in <1 µs using standard 10 mA GPIO - faster than integrated PMIC alternatives with fixed sequencing delays. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual P-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si1965DH-T1-BE3 | RDS(on) = 0.640 Ω @ -2.5 V (vs. 0.490 Ω for SI1967DH-T1-BE3); otherwise identical pinout, package, and VDS | Higher threshold sensitivity; better suited for 2.5 V–3.3 V systems where gate drive margin is limited | Select when prioritizing gate drive compatibility over minimum conduction loss |
| DMC2038LVT-7 | Single-channel P-MOSFET in SOT-563; RDS(on) = 0.550 Ω @ -4.5 V; no dual-channel integration | Requires two devices and extra PCB area to replicate dual functionality; lacks shared thermal path | Choose only if board layout mandates discrete placement or thermal decoupling between channels |
Compared with SI1967DH-T1-BE3, Si1965DH-T1-BE3 trades 0.15 Ω higher RDS(on) for improved gate threshold stability at marginal VGS, while DMC2038LVT-7 sacrifices integration and thermal coupling to offer single-channel flexibility - neither is pin-compatible, but both serve overlapping portable power-switching roles.
Availability
SI1967DH-T1-BE3 is available at Aetrix Electronics and suitable for USB OTG arbitration, smartphone battery protection, wearable sensor power gating, and Bluetooth LE peripheral rail control requiring stable component supply across high-mix, low-volume production runs.
Supply support for SI1967DH-T1-BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors and passive components, specializing in high-reliability MOSFETs, diodes, optoelectronics, and resistive solutions for demanding industrial and consumer applications.
The SI1967DH belongs to Vishay's "Little Foot" dual-channel SC-70 MOSFET family, engineered specifically for miniaturized load switching in portable electronics where board space, thermal density, and logic-level compatibility are critical constraints.
FAQ
What is the maximum continuous drain current rating for SI1967DH-T1-BE3 at 70 °C case temperature?
The SI1967DH-T1-BE3 supports -1.1 A continuous drain current per channel when the case temperature is maintained at 70 °C. This derating reflects thermal limits of the SOT-363 copper leadframe package and assumes proper PCB copper area per Vishay Application Note AN816. Exceeding this current risks junction temperature exceeding 150 °C under steady-state conditions.
Does SI1967DH-T1-BE3 include integrated ESD protection on its gate terminals?
The SI1967DH-T1-BE3 does not specify integrated ESD protection in its datasheet; gate oxide robustness is characterized by ±8 V absolute maximum VGS, but no HBM or CDM ESD rating is published. System-level ESD protection (e.g., 100 Ω series resistor + TVS) is recommended for gate inputs in handheld environments per IEC 61000-4-2 Level 4 compliance.
Can SI1967DH-T1-BE3 be used in a back-to-back configuration for AC signal switching?
No - SI1967DH-T1-BE3 is a dual P-channel MOSFET with unidirectional body diodes oriented from source to drain. It cannot block bidirectional current like a true analog switch; back-to-back use would require external series diodes or complementary N/P pairs. Its design intent is DC load switching, not AC signal routing.
What is the typical body diode forward voltage (VSD) of SI1967DH-T1-BE3 at -0.9 A?
The typical body diode forward voltage VSD of SI1967DH-T1-BE3 is -0.8 V at -0.9 A and TJ = 25 °C. This value increases to approximately -1.2 V at maximum rating, confirming low-loss freewheeling capability essential for synchronous rectification and reverse-current blocking in portable power paths.
Is SI1967DH-T1-BE3 compatible with lead-free reflow profiles per JEDEC J-STD-020?
Yes - SI1967DH-T1-BE3 is qualified for lead-free reflow soldering per JEDEC J-STD-020D. Its MSL rating is 1 (unlimited floor life), and peak reflow temperature is rated to 260 °C for 30 seconds. The "-BE3" suffix explicitly denotes lead-free, halogen-free construction compliant with RoHS Directive 2002/95/EC.
SI1967DH-T1-BE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- 6-TSSOP, SC-88, SOT-363
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 P-Channel (Dual)
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 20V
- Current - Continuous Drain (Id) @ 25°C:
- 1A (Ta), 1.3A (Tc)
- Rds On (Max) @ Id, Vgs:
- 490mOhm @ 910mA, 4.5V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 4nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 110pF @ 10V
- Power - Max:
- 740mW (Ta), 1.25W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SC-70-6
SI1967DH-T1-BE3 FAQ
1.How can I place an order for SI1967DH-T1-BE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI1967DH-T1-BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI1967DH-T1-BE3 reliable?
The price and inventory of SI1967DH-T1-BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI1967DH-T1-BE3 is usually 5 days.
3.What payment methods are accepted for SI1967DH-T1-BE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI1967DH-T1-BE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI1967DH-T1-BE3?
SI1967DH-T1-BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI1967DH-T1-BE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI1967DH-T1-BE3?
For technical support, including SI1967DH-T1-BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI1967DH-T1-BE3 requirements.
6.How does Aetrix verify that SI1967DH-T1-BE3 is sourced from the original manufacturer or authorized distributors?
All SI1967DH-T1-BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI1967DH-T1-BE3 meets industry standards.
7.What is the process for return or replacement of SI1967DH-T1-BE3?
All SI1967DH-T1-BE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI1967DH-T1-BE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI1967DH-T1-BE3 part is unused and in its original packaging.
Return procedure for SI1967DH-T1-BE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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