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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FET, MOSFET Arrays

Vishay Siliconix SI1967DH-T1-E3

Name: SI1967DH-T1-E3
Brand: Vishay Siliconix
SKU: SI1967DH-T1-E3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI1967DH-T1-E3

Manufacturer:: Vishay Siliconix

Category:: FET, MOSFET Arrays

Package:: 6-TSSOP, SC-88, SOT-363

Datasheet:: SI1967DH-T1-E3.pdf

Description:: MOSFET 2P-CH 20V 1.3A SC70-6

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Product details

Overview

SI1967DH-T1-E3 from Vishay Siliconix is a dual P-channel enhancement-mode MOSFET in SOT-363 (SC-70-6) package, rated for -20 V V_DS, 0.490 Ω R_DS(on) at V_GS = -4.5 V, -1.3 A continuous drain current (package-limited), and 1.6 nC typical gate charge. It serves as a compact, low-R_DS(on) load switch in space-constrained portable power rails.

For engineers reviewing the SI1967DH-T1-E3 datasheet, SI1967DH-T1-E3 pinout, SI1967DH-T1-E3 application, or SI1967DH-T1-E3 equivalent, key selection criteria include its dual P-channel topology, -20 V rating, sub-0.5 Ω on-resistance at -4.5 V drive, 6-pin SOT-363 footprint, and PWM-optimized switching performance for battery-powered load management.

Technical Context

This device integrates two independent P-channel TrenchFET® MOSFETs in a single 6-pin SC-70 package, sharing no internal connection between channels. Each channel features a gate threshold voltage of -0.4 V to -1.0 V and exhibits specified R_DS(on) down to 0.390 Ω (typ.) at -4.5 V drive with -0.91 A current.

Its dynamic characteristics include 110 pF input capacitance, 16 pF reverse transfer capacitance, and fast switching with 12 ns turn-on delay and 10 ns fall time under -4.5 V gate drive - optimized for high-frequency PWM control in portable DC/DC and load-switching circuits.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-20 V - Maximum blocking voltage for portable 3.3 V/5 V rail protection
R_DS(on)	0.490 Ω at V_GS = -4.5 V - Enables <100 mW conduction loss at 1 A load
I_D (cont)	-1.3 A (T_C = 25 °C) - Package-limited current suitable for low-power load switching
Q_g	1.6 nC (V_GS = -4.5 V) - Low gate charge supports efficient 1–2 MHz PWM operation
Package	SOT-363 (SC-70-6) - 2.1 mm × 2.0 mm surface-mount footprint for dense PCB layouts
V_GS(th)	-0.4 to -1.0 V - Ensures reliable turn-on with standard logic-level P-ch drivers
R_thJA	170 °C/W (max) - Requires thermal-aware layout for sustained >0.5 A operation

Pinout & Package

SOT-363 (SC-70-6) package with exposed drain pads for thermal enhancement; 6-pin leadless plastic package measuring 2.1 mm × 2.0 mm × 1.0 mm (max height).

Pin/Terminal	Circuit Role	Design Meaning
1 (S1)	Source of Channel 1	Low-side return path for first MOSFET; tied to local ground or load reference
2 (G1)	Gate of Channel 1	Control input for independent switching of first channel; requires negative V_GS
3 (D2)	Drain of Channel 2	High-side switched output for second channel; connected to input supply rail
4 (D1)	Drain of Channel 1	High-side switched output for first channel; connects to load input
5 (G2)	Gate of Channel 2	Independent control input for second MOSFET; enables dual-load sequencing
6 (S2)	Source of Channel 2	Return path for second channel; may be tied to same or separate ground node

Key Features

Feature	Design Value
TrenchFET® technology	Enables lower R_DS(on) per die area vs. planar MOSFETs, critical for miniaturized load switches
PWM-optimized switching	1.6 nC Q_g and 10 ns fall time minimize switching losses in duty-cycled power control
Halogen-free & RoHS-compliant	Meets IEC 61249-2-21 and Directive 2002/95/EC for environmentally regulated end equipment
Dual independent channels	No internal coupling allows asynchronous control of two separate loads from one compact footprint

Applications

Smartphone Power Sequencing	USB OTG Power Switch
Use Scenario: Independent enable/disable of camera module and display backlight in smartphone mainboard. IC Role / Device Role / Timing Role: Dual P-channel load switch controlling two 3.3 V/5 V subsystems with separate gate control. Use Value: Eliminates need for two discrete SOT-23 devices, saving 3.5 mm² board area while maintaining independent sequencing timing.	Use Scenario: Enabling VBUS power to USB peripheral only when host mode is active. IC Role / Device Role / Timing Role: P-channel high-side switch isolating USB VBUS rail with fast turn-off to meet USB suspend leakage requirements. Use Value: 0.490 Ω R_DS(on) limits voltage drop to <500 mV at 1 A, preserving USB 2.0 voltage compliance during enumeration.
Wearable Sensor Hub Power Gating	Bluetooth LE Module Enable Control
Use Scenario: Shutting down inertial measurement unit (IMU) and ambient light sensor during sleep mode. IC Role / Device Role / Timing Role: Dual-channel power gate managing two ultra-low-power sensors with independent wake-up triggers. Use Value: Sub-1 µA IDSS and -0.4 V VGS(th) ensure stable off-state with weak pull-up control, minimizing standby current.	Use Scenario: Controlling power to Bluetooth LE radio module based on application processor command. IC Role / Device Role / Timing Role: High-side P-MOSFET switch enabling/disabling 3.3 V supply to BLE SoC with minimal propagation delay. Use Value: 12 ns td(on) and 10 ns tf support rapid power cycling (<100 µs) required for BLE connection establishment latency budgets.

Smartphone Power Sequencing

USB OTG Power Switch

Use Scenario: Independent enable/disable of camera module and display backlight in smartphone mainboard.

IC Role / Device Role / Timing Role: Dual P-channel load switch controlling two 3.3 V/5 V subsystems with separate gate control.

Use Value: Eliminates need for two discrete SOT-23 devices, saving 3.5 mm² board area while maintaining independent sequencing timing.

Use Scenario: Enabling VBUS power to USB peripheral only when host mode is active.

IC Role / Device Role / Timing Role: P-channel high-side switch isolating USB VBUS rail with fast turn-off to meet USB suspend leakage requirements.

Use Value: 0.490 Ω R_DS(on) limits voltage drop to <500 mV at 1 A, preserving USB 2.0 voltage compliance during enumeration.

Wearable Sensor Hub Power Gating

Bluetooth LE Module Enable Control

Use Scenario: Shutting down inertial measurement unit (IMU) and ambient light sensor during sleep mode.

IC Role / Device Role / Timing Role: Dual-channel power gate managing two ultra-low-power sensors with independent wake-up triggers.

Use Value: Sub-1 µA IDSS and -0.4 V VGS(th) ensure stable off-state with weak pull-up control, minimizing standby current.

Use Scenario: Controlling power to Bluetooth LE radio module based on application processor command.

IC Role / Device Role / Timing Role: High-side P-MOSFET switch enabling/disabling 3.3 V supply to BLE SoC with minimal propagation delay.

Use Value: 12 ns td(on) and 10 ns tf support rapid power cycling (<100 µs) required for BLE connection establishment latency budgets.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual P-channel load switch applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si1965DH-T1-E3	Higher R_DS(on) (0.75 Ω @ -4.5 V), lower Q_g (1.2 nC), same SOT-363 package	Better suited for ultra-low-power always-on circuits where gate drive strength is limited	Select when lower gate charge outweighs higher conduction loss in battery-critical systems
DMC2038LSD-7	Single P-channel, 20 V, 0.45 Ω @ -4.5 V, SOT-26 package (different pinout, no dual channel)	Requires two devices for dual-load control; larger total footprint than SI1967DH-T1-E3	Choose only if dual-channel integration is not required and existing layout uses SOT-26

Compared with Si1965DH-T1-E3, SI1967DH-T1-E3 delivers 35 % lower R_DS(on) for reduced conduction loss but demands slightly higher gate drive current; versus DMC2038LSD-7, it provides true dual-channel integration in half the board area, eliminating inter-device timing skew in synchronized load control.

Availability

SI1967DH-T1-E3 is available at Aetrix Electronics and suitable for portable consumer electronics, wearable power management, and USB peripheral interface designs requiring stable component supply and Pb-free compliance.

Supply support for SI1967DH-T1-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, optoelectronics, and passive components with emphasis on power efficiency and reliability.

The Si196x DH series targets space-constrained portable electronics, delivering dual-channel P-MOSFET functionality in ultra-small SC-70 packages for intelligent load switching and power domain isolation.

FAQ

What is the maximum continuous drain current rating for SI1967DH-T1-E3 at 70 °C case temperature?

The SI1967DH-T1-E3 supports -1.1 A continuous drain current at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the SOT-363 package without external heatsinking. At ambient conditions, the rating drops further to -0.83 A at T_A = 70 °C due to higher junction-to-ambient thermal resistance. Designers must verify PCB copper area and airflow to sustain this current in real-world operation.

Does SI1967DH-T1-E3 include integrated ESD protection on its gate terminals?

The SI1967DH-T1-E3 does not specify integrated gate ESD protection in its datasheet. Its absolute maximum V_GS rating is ±8 V, and gate-source leakage is guaranteed at ±100 nA with ±8 V applied - indicating no built-in clamping diodes. External gate resistors and TVS devices are recommended for robust handling in automated assembly or field-replaceable modules where electrostatic discharge risk exists.

Can SI1967DH-T1-E3 be used in linear regulation mode?

The SI1967DH-T1-E3 is not characterized or rated for linear regulation use. Its Safe Operating Area (SOA) graph shows DC operation limited to <0.1 A at V_DS > 5 V, and power dissipation is capped at 0.47 W at T_A = 70 °C. The device lacks thermal shutdown or current limiting, making it unsuitable for pass-element applications. It is designed exclusively for switching-mode load control with defined on/off states.

What is the body diode forward voltage of SI1967DH-T1-E3 at -0.9 A source current?

The SI1967DH-T1-E3 specifies a body diode forward voltage (V_SD) of -0.8 V to -1.2 V at I_S = -0.9 A and T_J = 25 °C. This range reflects process variation and ensures predictable reverse conduction behavior during inductive load flyback or back-to-back switch configurations. The diode's reverse recovery time (t_rr) is 25–50 ns, supporting moderate-speed switching without excessive ringing.

Is SI1967DH-T1-E3 compatible with reflow soldering per J-STD-020?

Yes, SI1967DH-T1-E3 is qualified for standard Pb-free reflow per J-STD-020C. Its moisture sensitivity level (MSL) is rated at Level 1 - unlimited floor life at ≤30 °C/85 % RH - and peak reflow temperature is 260 °C. The device uses matte tin (Sn) termination finish and meets JEDEC specifications for thermal cycling durability, making it suitable for high-volume automated assembly without special baking or handling.

SI1967DH-T1-E3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: 6-TSSOP, SC-88, SOT-363

Packaging:: Tape & Reel (TR)

Product Status:: Active

Technology:: MOSFET (Metal Oxide)

Configuration:: 2 P-Channel (Dual)

FET Feature:: Logic Level Gate

Drain to Source Voltage (Vdss):: 20V

Current - Continuous Drain (Id) @ 25°C:: 1.3A

Rds On (Max) @ Id, Vgs:: 490mOhm @ 910mA, 4.5V

Vgs(th) (Max) @ Id:: 1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 4nC @ 8V

Input Capacitance (Ciss) (Max) @ Vds:: 110pF @ 10V

Power - Max:: 1.25W

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SC-70-6

SI1967DH-T1-E3 FAQ

1.How can I place an order for SI1967DH-T1-E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI1967DH-T1-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI1967DH-T1-E3 reliable?

The price and inventory of SI1967DH-T1-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI1967DH-T1-E3 is usually 5 days.

3.What payment methods are accepted for SI1967DH-T1-E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI1967DH-T1-E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI1967DH-T1-E3?

SI1967DH-T1-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI1967DH-T1-E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI1967DH-T1-E3?

For technical support, including SI1967DH-T1-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI1967DH-T1-E3 requirements.

6.How does Aetrix verify that SI1967DH-T1-E3 is sourced from the original manufacturer or authorized distributors?

All SI1967DH-T1-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI1967DH-T1-E3 meets industry standards.

7.What is the process for return or replacement of SI1967DH-T1-E3?

All SI1967DH-T1-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SI1967DH-T1-E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI1967DH-T1-E3 part is unused and in its original packaging.

Return procedure for SI1967DH-T1-E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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