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Vishay Siliconix SI2301BDS-T1-BE3
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- Part No.:
- SI2301BDS-T1-BE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-236-3, SC-59, SOT-23-3
- Datasheet:
-
SI2301BDS-T1-BE3.pdf
- Description:
- P-CHANNEL 2.5-V (G-S) MOSFET
- Quantity:
- Payment:
- Shipping:
Inventory:3,800
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Product details
Overview
SI2301BDS-T1-BE3 from Vishay Siliconix is a P-channel enhancement-mode TrenchFET® MOSFET in SOT-23 package, rated for -20 V VDS, 0.100 Ω RDS(on) at -4.5 V VGS, and -2.4 A continuous drain current at TA = 25 °C. It serves as a low-side load switch in portable power management circuits.
For engineers reviewing the SI2301BDS-T1-BE3 datasheet, SI2301BDS-T1-BE3 pinout, SI2301BDS-T1-BE3 application, or SI2301BDS-T1-BE3 equivalent, key selection criteria include gate threshold voltage (-0.45 to -0.95 V), thermal resistance (145 °C/W max RthJA), diode forward voltage (-0.80 to -1.2 V), and RoHS-compliant halogen-free construction.
Technical Context
This MOSFET operates in enhancement mode with a negative gate-source voltage turn-on characteristic, requiring no external biasing for high-side switching when used with logic-level gate drivers. Its trench-based silicon structure enables low on-resistance and fast switching with 4.5 nC typical total gate charge.
The device integrates an intrinsic body diode with -0.80 V forward voltage at -0.75 A, supporting synchronous rectification and reverse-current blocking in DC-DC converters. Thermal performance is defined for surface-mount operation on FR4 PCBs with defined pad layouts per Application Note 826.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -20 V - Maximum drain-source blocking voltage for battery-input circuits up to 12 V nominal systems |
| RDS(on) | 0.100 Ω at VGS = -4.5 V - Enables <100 mW conduction loss at 1 A load current |
| ID (cont) | -2.4 A at TA = 25 °C - Supports compact USB-powered peripheral switching without heatsinking |
| VGS(th) | -0.45 to -0.95 V - Ensures reliable turn-on with 1.8 V or 3.3 V logic-level gate drive |
| Qg | 4.5–10 nC - Low gate charge allows efficient PWM control up to 1 MHz in power management ICs |
| RthJA | 145 °C/W max - Limits junction temperature rise to ≤100 °C under 0.7 W dissipation on standard FR4 |
| VSD | -0.80 to -1.2 V - Defines forward conduction loss of integrated body diode during freewheeling |
Pinout & Package
Package: SOT-23 (TO-236), 3-lead surface-mount plastic package per JEDEC TO-236AB. Dimensions: 2.80–3.04 mm × 2.10–2.64 mm × 0.89–1.12 mm (D × E × A). Compliant with IPC-7351B footprint recommendations.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Source) | Source terminal of P-channel MOSFET | Common return path for load current; connects to system ground or higher potential depending on switch topology |
| 2 (Gate) | Control input for channel conduction | Accepts negative VGS relative to source to enable conduction; requires logic-compatible driver with sink capability |
| 3 (Drain) | Output terminal connected to load | Carries switched current to load; electrically isolated from source when off; exposed drain pad improves thermal transfer |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® technology | Enables 0.100 Ω RDS(on) in SOT-23, reducing conduction losses by >30% vs. planar MOSFETs at same die size |
| 100% Rg tested | Guarantees gate resistance between 2–16 Ω, ensuring consistent switching speed and EMI behavior across production lots |
| Halogen-free construction | Meets IEC 61249-2-21 definition; eliminates brominated flame retardants without compromising mechanical or thermal reliability |
| RoHS-compliant (Pb-free) | Lead-free terminations meet Directive 2002/95/EC; compatible with standard SnAgCu reflow profiles (J-STD-020) |
Applications
| Battery Protection Circuit | USB Port Power Switch |
|---|---|
Use Scenario: Reverse-current blocking and overcurrent shutdown in single-cell Li-ion battery packs. IC Role / Device Role / Timing Role: P-channel MOSFET configured as low-side protection switch controlled by battery management IC. Use Value: 0.100 Ω RDS(on) limits voltage drop to <100 mV at 1 A, preserving battery runtime and enabling accurate current sensing. | Use Scenario: Hot-swap power enable for downstream USB peripherals with inrush current limiting. IC Role / Device Role / Timing Role: Load switch isolating VBUS from attached devices until enumeration completes. Use Value: -0.45 V VGS(th) ensures full turn-on with 3.3 V GPIO, while 4.5 nC Qg supports fast enable/disable transitions (<100 ns). |
| LED Backlight Dimming | Industrial Sensor Power Gating |
Use Scenario: PWM-controlled current sink for white LED strings in handheld displays. IC Role / Device Role / Timing Role: Low-side switch modulating LED current via duty-cycle-controlled gate drive. Use Value: Fast 20–30 ns turn-on time and 40–60 ns rise time minimize PWM distortion and reduce audible noise in dimmed operation. | Use Scenario: Power gating of analog sensor subsystems during sleep modes in industrial IoT nodes. IC Role / Device Role / Timing Role: Standby power switch disconnecting sensors from supply rail to achieve µA-level quiescent current. Use Value: -1 µA IDSS at VDS = -20 V ensures leakage-induced wake-up events are suppressed below 10 nA per channel. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMG2301U-7 | RDS(on) = 0.115 Ω at -4.5 V; Qg = 5.5 nC; RthJA = 150 °C/W | Slightly higher conduction loss and thermal resistance; identical SOT-23 pinout | Select when dual sourcing is required and ±15 mΩ RDS(on) tolerance is acceptable |
| AO3401 | RDS(on) = 0.085 Ω at -4.5 V; VGS(th) = -0.7 to -1.3 V; Qg = 6.5 nC | Lower on-resistance but wider VGS(th) range increases risk of partial turn-on with 1.8 V logic | Prefer for higher-efficiency 3.3 V–driven loads where tighter gate threshold control is not critical |
Compared with DMG2301U-7 and AO3401, the SI2301BDS-T1-BE3 offers the tightest VGS(th) distribution (-0.45 to -0.95 V) and lowest gate charge among SOT-23 P-channel MOSFETs rated for -20 V, making it optimal for low-voltage logic compatibility and high-frequency switching.
Availability
SI2301BDS-T1-BE3 is available at Aetrix Electronics and suitable for battery protection circuits, USB port power switches, LED backlight dimming, and industrial sensor power gating requiring stable component supply and long-term lifecycle support.
Supply support for SI2301BDS-T1-BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors and passive components, specializing in high-reliability power MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.
The Si2301BDS belongs to Vishay's TrenchFET® P-channel logic-level MOSFET product line, engineered for ultra-low RDS(on) and fast switching in space-constrained portable and battery-powered applications.
FAQ
What is the maximum continuous drain current rating for SI2301BDS-T1-BE3 at 70 °C ambient temperature?
The SI2301BDS-T1-BE3 supports -1.9 A continuous drain current at TA = 70 °C under steady-state conditions on FR4 board, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations imposed by its 145 °C/W maximum junction-to-ambient thermal resistance and 0.57 W power dissipation limit at that temperature.
Does SI2301BDS-T1-BE3 have a built-in body diode, and what is its forward voltage?
Yes, the SI2301BDS-T1-BE3 includes an integrated body diode with a forward voltage of -0.80 to -1.2 V at -0.75 A source current and VGS = 0 V. This diode enables bidirectional current handling in applications like reverse-polarity protection and freewheeling paths in buck regulators.
Is SI2301BDS-T1-BE3 compatible with lead-free reflow soldering processes?
Yes, the SI2301BDS-T1-BE3 features Pb-free terminations and is qualified for standard lead-free reflow profiles per J-STD-020, including peak temperatures up to 260 °C. Its halogen-free construction also complies with IEC 61249-2-21 requirements.
What is the gate threshold voltage range for SI2301BDS-T1-BE3, and why does it matter for logic-level drive?
The SI2301BDS-T1-BE3 has a gate threshold voltage range of -0.45 V to -0.95 V, meaning it fully enhances with gate-source voltages as low as -0.95 V. This ensures robust turn-on with 1.8 V and 3.3 V microcontroller GPIOs, eliminating need for level-shifting circuitry in low-voltage portable designs.
How is thermal performance characterized for SI2301BDS-T1-BE3 on standard FR4 PCBs?
Thermal performance of the SI2301BDS-T1-BE3 is characterized with surface mounting on FR4 board per JEDEC JESD51-2. Its maximum junction-to-ambient thermal resistance is 145 °C/W for t ≤ 5 s pulses and 175 °C/W for steady-state operation, based on recommended minimum pad layout per Vishay Application Note 826.
SI2301BDS-T1-BE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-236-3, SC-59, SOT-23-3
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 2.2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 100mOhm @ 2.8A, 4.5V
- Vgs(th) (Max) @ Id:
- 950mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 10 nC @ 4.5 V
- Vgs (Max):
- ±8V
- Input Capacitance (Ciss) (Max) @ Vds:
- 375 pF @ 6 V
- FET Feature:
- -
- Power Dissipation (Max):
- 700mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-23-3 (TO-236)
SI2301BDS-T1-BE3 FAQ
1.How can I place an order for SI2301BDS-T1-BE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI2301BDS-T1-BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI2301BDS-T1-BE3 reliable?
The price and inventory of SI2301BDS-T1-BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI2301BDS-T1-BE3 is usually 5 days.
3.What payment methods are accepted for SI2301BDS-T1-BE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI2301BDS-T1-BE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI2301BDS-T1-BE3?
SI2301BDS-T1-BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI2301BDS-T1-BE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI2301BDS-T1-BE3?
For technical support, including SI2301BDS-T1-BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI2301BDS-T1-BE3 requirements.
6.How does Aetrix verify that SI2301BDS-T1-BE3 is sourced from the original manufacturer or authorized distributors?
All SI2301BDS-T1-BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI2301BDS-T1-BE3 meets industry standards.
7.What is the process for return or replacement of SI2301BDS-T1-BE3?
All SI2301BDS-T1-BE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI2301BDS-T1-BE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI2301BDS-T1-BE3 part is unused and in its original packaging.
Return procedure for SI2301BDS-T1-BE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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