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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI2301BDS-T1-E3

Name: SI2301BDS-T1-E3
Brand: Vishay Siliconix
SKU: SI2301BDS-T1-E3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI2301BDS-T1-E3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: SI2301BDS-T1-E3.pdf

Description:: MOSFET P-CH 20V 2.2A SOT23-3

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Product details

Overview

SI2301BDS-T1-E3 from Vishay Siliconix is a P-channel enhancement-mode TrenchFET® MOSFET in SOT-23 (TO-236) package, rated for -20 V V_DS, 0.100 Ω R_DS(on) at V_GS = -4.5 V, and -2.4 A continuous drain current at T_A = 25 °C. It serves as a low-side load switch or reverse-polarity protection device in space-constrained DC power rails.

For engineers reviewing the SI2301BDS-T1-E3 datasheet, SI2301BDS-T1-E3 pinout, SI2301BDS-T1-E3 application, or SI2301BDS-T1-E3 equivalent, key selection criteria include guaranteed R_GS(th) (-0.45 to -0.95 V), 100 % R_g tested, halogen-free and RoHS-compliant construction, and thermal resistance R_thJA ≤ 145 °C/W on FR4.

Technical Context

This discrete P-channel MOSFET operates with gate threshold voltage between -0.45 V and -0.95 V, enabling logic-level drive from 2.5 V or 3.3 V controllers. Its trench-based silicon structure delivers low on-resistance and fast switching: t_d(on) ≤ 30 ns, t_f ≤ 30 ns, with Q_g = 4.5–10 nC at V_GS = -4.5 V.

It integrates an intrinsic body diode with V_SD = -0.80 to -1.2 V at I_S = -0.75 A, supporting synchronous rectification or flyback conduction. Absolute maximum ratings include V_DS = -20 V, V_GS = ±8 V, and T_J = -55 to +150 °C - validated under steady-state and pulsed conditions per JEDEC JESD78.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-20 V - Maximum blocking voltage for reverse-polarity protection or high-side switching in ≤20 V systems
R_DS(on)	0.100 Ω at V_GS = -4.5 V - Enables <100 mW conduction loss at 1 A, critical for battery-powered efficiency
I_D (continuous)	-2.4 A at T_A = 25 °C - Supports compact load-switch designs without forced air or heatsinking
V_GS(th)	-0.45 to -0.95 V - Ensures reliable turn-on with standard 2.5 V/3.3 V GPIOs, no level-shifting required
Q_g	4.5–10 nC - Low gate charge enables fast switching with minimal driver strength (e.g., MCU GPIO)
R_thJA	120–145 °C/W - Thermal performance validated on FR4 PCB per JEDEC JESD51-2, defines safe power derating
V_SD	-0.80 to -1.2 V - Body diode forward voltage limits reverse-current losses in bidirectional power paths

Pinout & Package

SOT-23 (TO-236) surface-mount package: 3-pin, single-row, gull-wing leads; dimensions per Vishay Doc. 71196 (D = 2.80–3.04 mm, E = 2.10–2.64 mm, e = 0.95 mm BSC).

Pin/Terminal	Circuit Role	Design Meaning
1 (Source)	Source terminal of P-channel MOSFET	Connected to higher potential (e.g., input rail); body diode anode; primary current return path
2 (Gate)	Control electrode	Receives negative gate drive relative to source; threshold range ensures compatibility with 2.5 V logic
3 (Drain)	Output/current-sink terminal	Connected to load; carries full switched current; exposed drain pad improves thermal conduction in layout

Key Features

Feature	Design Value
TrenchFET® technology	Enables lower R_DS(on) and higher cell density vs. planar MOSFETs - reduces board area and conduction loss
100 % R_g tested	Guarantees gate resistance ≤16 Ω - ensures predictable switching speed and EMI control without post-test screening
Halogen-free & RoHS-compliant	Meets IEC 61249-2-21 and Directive 2002/95/EC - supports environmental compliance for global end equipment
Low V_GS(th) distribution	Specified -0.45 to -0.95 V - tight threshold window minimizes batch-to-batch variation in turn-on timing
Thermally enhanced SOT-23	Exposed drain pad and optimized die attach - improves heat transfer to PCB copper, extending safe operating area

Applications

Battery-Powered Load Switching	Reverse-Polarity Protection
Use Scenario: Enabling/disabling power to peripherals (e.g., sensors, radios) in portable medical devices or wearables. IC Role / Device Role / Timing Role: P-channel MOSFET used as low-side switch with gate driven by microcontroller GPIO. Use Value: 0.100 Ω R_DS(on) limits voltage drop to <100 mV at 1 A, preserving battery runtime and system regulation.	Use Scenario: Preventing damage when users insert batteries backward in handheld test equipment or IoT edge nodes. IC Role / Device Role / Timing Role: P-channel MOSFET placed in series with positive supply rail; body diode blocks reverse current. Use Value: -20 V V_DS rating provides 2× margin over common 9 V/12 V battery inputs, ensuring robust fault tolerance.
USB Port Power Control	Hot-Swap Circuitry
Use Scenario: Managing VBUS enable/disable in USB-C accessories or embedded host ports with strict inrush control. IC Role / Device Role / Timing Role: P-channel MOSFET configured as ideal diode controller front-end with external gate resistor. Use Value: Fast 30 ns turn-off time and low Q_g allow precise inrush limiting without external active circuitry.	Use Scenario: Safely inserting/removing boards in modular industrial controllers or telecom line cards. IC Role / Device Role / Timing Role: P-channel MOSFET acting as soft-start switch in series with backplane power rail. Use Value: Guaranteed -0.45 V minimum V_GS(th) ensures reliable turn-on even with marginal gate drive during brown-out conditions.

Battery-Powered Load Switching

Reverse-Polarity Protection

Use Scenario: Enabling/disabling power to peripherals (e.g., sensors, radios) in portable medical devices or wearables.

IC Role / Device Role / Timing Role: P-channel MOSFET used as low-side switch with gate driven by microcontroller GPIO.

Use Value: 0.100 Ω R_DS(on) limits voltage drop to <100 mV at 1 A, preserving battery runtime and system regulation.

Use Scenario: Preventing damage when users insert batteries backward in handheld test equipment or IoT edge nodes.

IC Role / Device Role / Timing Role: P-channel MOSFET placed in series with positive supply rail; body diode blocks reverse current.

Use Value: -20 V V_DS rating provides 2× margin over common 9 V/12 V battery inputs, ensuring robust fault tolerance.

USB Port Power Control

Hot-Swap Circuitry

Use Scenario: Managing VBUS enable/disable in USB-C accessories or embedded host ports with strict inrush control.

IC Role / Device Role / Timing Role: P-channel MOSFET configured as ideal diode controller front-end with external gate resistor.

Use Value: Fast 30 ns turn-off time and low Q_g allow precise inrush limiting without external active circuitry.

Use Scenario: Safely inserting/removing boards in modular industrial controllers or telecom line cards.

IC Role / Device Role / Timing Role: P-channel MOSFET acting as soft-start switch in series with backplane power rail.

Use Value: Guaranteed -0.45 V minimum V_GS(th) ensures reliable turn-on even with marginal gate drive during brown-out conditions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMG2301UVT-7	R_DS(on) = 0.115 Ω @ -4.5 V; V_GS(th) = -0.5 to -1.2 V; same SOT-23 package	Higher threshold spread may require stronger gate pull-down in low-voltage systems	Prefer when tighter V_GS(th) distribution is not required and cost sensitivity dominates
AO3401	R_DS(on) = 0.085 Ω @ -4.5 V; V_GS(th) = -0.7 to -1.3 V; slightly higher Q_g (12 nC)	Lower R_DS(on) improves efficiency but higher Q_g increases driver demand	Choose when <85 mΩ on-resistance justifies added gate drive complexity

Compared with DMG2301UVT-7 and AO3401, the SI2301BDS-T1-E3 offers the narrowest V_GS(th) range (-0.45 to -0.95 V) and 100 % R_g testing - delivering superior consistency in low-voltage switching and reduced design validation effort across production lots.

Availability

SI2301BDS-T1-E3 is available at Aetrix Electronics and suitable for battery-powered load switching, reverse-polarity protection, and USB port power control requiring stable component supply, long-term lifecycle support, and RoHS/halogen-free compliance.

Supply support for SI2301BDS-T1-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors and passive components, specializing in high-reliability power MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.

The Si2301BDS belongs to Vishay's TrenchFET® P-channel logic-level MOSFET family, engineered for efficient, space-saving power control in portable and low-voltage embedded systems where gate drive simplicity and thermal performance are critical.

FAQ

What is the maximum continuous drain current for SI2301BDS-T1-E3 at 70 °C ambient temperature?

The SI2301BDS-T1-E3 supports -1.9 A continuous drain current at T_A = 70 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the SOT-23 package on FR4 PCB; actual capability depends on copper area, airflow, and layout. The SI2301BDS-T1-E3 datasheet (Doc. 72066, Rev. F) confirms this value under steady-state conditions with no forced cooling.

Does SI2301BDS-T1-E3 have a guaranteed gate resistance specification?

Yes - the SI2301BDS-T1-E3 undergoes 100 % R_g testing per its datasheet, with gate resistance specified as 2–16 Ω at f = 1 MHz. This ensures consistent switching behavior and simplifies driver design. The SI2301BDS-T1-E3's guaranteed R_g eliminates need for post-production screening and supports predictable EMI performance in high-frequency switching applications.

Can SI2301BDS-T1-E3 be used for reverse-voltage protection in a 12 V automotive subsystem?

Yes - the SI2301BDS-T1-E3 has a -20 V V_DS rating, providing 67 % headroom above nominal 12 V automotive rails and accommodating load-dump transients up to ISO 7637-2 Pulse 5a (≤35 V). Its -0.45 V minimum V_GS(th) ensures reliable turn-on with standard 12 V regulator outputs. The SI2301BDS-T1-E3 is qualified for industrial temperature range (-55 to +150 °C), making it suitable for under-hood environments when thermally managed.

What is the typical total gate charge (Q_g) of SI2301BDS-T1-E3 at -4.5 V gate drive?

The SI2301BDS-T1-E3 has a typical total gate charge of 4.5 nC and maximum of 10 nC at V_GS = -4.5 V, V_DS = -6 V, and I_D ≈ -2.8 A, per the "Dynamic" section of its datasheet. This low Q_g enables fast switching with minimal driver power consumption - critical for battery-operated systems. The SI2301BDS-T1-E3's Q_g is measured under standardized conditions to ensure repeatability across production lots.

Is SI2301BDS-T1-E3 halogen-free and RoHS-compliant?

Yes - the SI2301BDS-T1-E3 is explicitly marked "Lead (Pb)-free" and certified halogen-free per IEC 61249-2-21 and RoHS-compliant per Directive 2002/95/EC, as confirmed in its ordering information and Features list. The "-E3" suffix denotes lead-free termination; the "-GE3" variant adds halogen-free packaging. The SI2301BDS-T1-E3 meets both requirements without exemptions, supporting global environmental compliance mandates.

SI2301BDS-T1-E3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Tape & Reel (TR)

Product Status:: Last Time Buy

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 2.2A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 2.5V, 4.5V

Rds On (Max) @ Id, Vgs:: 100mOhm @ 2.8A, 4.5V

Vgs(th) (Max) @ Id:: 950mV @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 10 nC @ 4.5 V

Vgs (Max):: ±8V

Input Capacitance (Ciss) (Max) @ Vds:: 375 pF @ 6 V

FET Feature:: -

Power Dissipation (Max):: 700mW (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-23-3 (TO-236)

SI2301BDS-T1-E3 FAQ

1.How can I place an order for SI2301BDS-T1-E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI2301BDS-T1-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI2301BDS-T1-E3 reliable?

The price and inventory of SI2301BDS-T1-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI2301BDS-T1-E3 is usually 5 days.

3.What payment methods are accepted for SI2301BDS-T1-E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI2301BDS-T1-E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI2301BDS-T1-E3?

SI2301BDS-T1-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI2301BDS-T1-E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI2301BDS-T1-E3?

For technical support, including SI2301BDS-T1-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI2301BDS-T1-E3 requirements.

6.How does Aetrix verify that SI2301BDS-T1-E3 is sourced from the original manufacturer or authorized distributors?

All SI2301BDS-T1-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI2301BDS-T1-E3 meets industry standards.

7.What is the process for return or replacement of SI2301BDS-T1-E3?

All SI2301BDS-T1-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SI2301BDS-T1-E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI2301BDS-T1-E3 part is unused and in its original packaging.

Return procedure for SI2301BDS-T1-E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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