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Vishay Siliconix SI2302ADS-T1
- Part No.:
- SI2302ADS-T1
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-236-3, SC-59, SOT-23-3
- Datasheet:
-
SI2302ADS-T1.pdf
- Description:
- MOSFET N-CH 20V 2.1A SOT23-3
- Quantity:
- Payment:
- Shipping:
Inventory:3,992
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Product details
Overview
SI2302ADS-T1 from Vishay Siliconix is an N-channel enhancement-mode MOSFET optimized for low-voltage switching in portable power management, load switching, and battery protection circuits. It features a 20 V drain-source breakdown voltage, 0.060 Ω RDS(on) at VGS = 4.5 V, 2.4 A continuous drain current (TA = 25 °C), and SOT-23 (TO-236) surface-mount package.
For engineers reviewing the SI2302ADS-T1 datasheet, SI2302ADS-T1 pinout, SI2302ADS-T1 application, or SI2302ADS-T1 equivalent, key selection criteria include its 2.5-V gate threshold compatibility with 3.3-V/2.5-V logic, low on-resistance at low gate drive, and halogen-free, RoHS-compliant construction per IEC 61249-2-21.
Technical Context
This device operates as a single N-channel power switch with gate-controlled conduction between drain and source terminals. Its 0.95 V typical gate threshold voltage enables reliable turn-on from 2.5-V microcontroller GPIOs, while the 0.070 Ω RDS(on) at VGS = 2.5 V ensures minimal conduction loss in low-voltage battery-fed systems.
The SI2302ADS-T1 integrates a body diode with 0.76 V forward voltage at 0.94 A, supporting reverse-current paths in DC-DC converters and back-bias protection. Thermal resistance of 140 °C/W (steady-state) and 115 °C/W (t ≤ 5 s) defines its power handling under pulsed and continuous conditions on FR4 PCBs.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 20 V - Maximum allowable drain-to-source voltage before avalanche breakdown; suitable for 12-V and lower battery rails. |
| RDS(on) @ VGS = 4.5 V | 0.060 Ω - Low conduction loss enabling <150 mW dissipation at 2.4 A; critical for thermal efficiency in compact layouts. |
| ID (continuous, TA = 25 °C) | 2.4 A - Rated output current without derating; supports USB-powered peripherals and LED drivers. |
| VGS(th) | 0.65–1.2 V - Ensures full enhancement with 2.5-V logic; eliminates need for level-shifting in MCU-driven switches. |
| Qg | 4.0–10 nC - Low total gate charge reduces drive power and speeds switching in high-frequency PWM control. |
| Ciss | 300 pF - Input capacitance impacts gate driver sizing and EMI filtering requirements in fast-switching applications. |
| TJ range | −55 to +150 °C - Extended junction temperature rating supports operation in automotive cabin and industrial enclosures. |
Pinout & Package
Package: SOT-23 (TO-236), 3-lead surface-mount plastic package with standard footprint (E = 2.10–2.64 mm, D = 2.80–3.04 mm). Designed for automated placement and reflow soldering on FR4 boards.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Gate) | Control input | Receives logic-level voltage to modulate channel conductivity; requires no external pull-down for default-off behavior. |
| 2 (Source) | Reference node / return path | Common connection point for load return and gate drive reference; forms cathode of integrated body diode. |
| 3 (Drain) | Power output terminal | Connects to load or supply rail; carries switched current and dissipates heat via PCB copper pour. |
Key Features
| Feature | Design Value |
|---|---|
| 100 % Rg tested | Guarantees gate resistance ≤ 2 Ω, ensuring predictable switching speed and driver compatibility across production lots. |
| Halogen-free construction | Meets IEC 61249-2-21 definition; eliminates brominated flame retardants for safer end-of-life processing and compliance with green electronics mandates. |
| RDS(on) specified at VGS = 2.5 V | 0.115 Ω maximum enables use with 2.5-V logic families without gate boosting, reducing BOM count in low-power systems. |
| RoHS-compliant (2002/95/EC) | Lead-free and compliant with EU hazardous substance restrictions; qualified for global commercial and industrial shipments. |
| Body diode VSD | 0.76 V typical at 0.94 A supports synchronous rectification and flyback energy recovery in DC-DC topologies. |
Applications
| Battery Protection Circuit | USB Load Switch |
|---|---|
Use Scenario: Isolating Li-ion battery packs from charging/discharging faults to prevent overcurrent and thermal runaway. IC Role / Device Role / Timing Role: Primary power FET in bidirectional protection IC or discrete overcurrent cutoff stage. Use Value: Low RDS(on) minimizes voltage drop during normal operation; 20 V rating accommodates 4S battery stacks up to 16.8 V. |
Use Scenario: Enabling/disabling power to USB peripheral ports under host controller command. IC Role / Device Role / Timing Role: Low-side load switch controlled by 3.3-V or 2.5-V GPIO with fast turn-on/turn-off timing. Use Value: 7 ns turn-on delay and 55 ns rise time support USB 2.0 hot-plug response; 0.060 Ω RDS(on) limits port voltage droop. |
| LED Backlight Driver | Power-Path Management |
Use Scenario: PWM dimming control of white LEDs in handheld displays and IoT panels. IC Role / Device Role / Timing Role: High-side or low-side current switch modulated at 1–20 kHz for brightness regulation. Use Value: 10 nC max Qg enables efficient gate driving from low-power MCUs; 150 °C TJ rating sustains operation near display heat sources. |
Use Scenario: Seamless handover between wall adapter and battery supply in portable medical devices and test equipment. IC Role / Device Role / Timing Role: OR-ing FET in ideal diode configuration to minimize forward voltage drop versus Schottky solutions. Use Value: Body diode VSD = 0.76 V and low RDS(on) reduce conduction loss by >50% compared to 0.3-V Schottky diodes at 1 A. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN2004LK-7 | RDS(on) = 0.055 Ω @ 4.5 V (lower), but VGS(th) = 1.0–2.5 V (wider range); SOT-23 package identical. | Higher gate threshold may require stronger drive for full enhancement at 2.5 V; better suited for 3.3-V-only systems. | Select DMN2004LK-7 when lowest possible RDS(on) is prioritized and gate drive ≥ 3.3 V is guaranteed. |
| AO3400 | RDS(on) = 0.028 Ω @ 10 V but only 0.052 Ω @ 4.5 V; VGS(th) = 0.7–1.4 V; same SOT-23 footprint. | Superior conduction at higher VGS, but less margin at 2.5 V; slightly higher Ciss (420 pF) increases gate drive demand. | Choose AO3400 where system uses 5-V logic or higher gate drive, and lower steady-state loss outweighs gate charge penalty. |
Compared with DMN2004LK-7 and AO3400, the SI2302ADS-T1 offers tighter VGS(th) distribution (0.65–1.2 V), guaranteed Rg testing, and halogen-free compliance-making it preferred for safety-critical, low-voltage, and environmentally regulated designs.
Availability
SI2302ADS-T1 is available at Aetrix Electronics and suitable for battery protection circuits, USB load switching, and LED backlight drivers requiring stable component supply, long-term lifecycle assurance, and consistent halogen-free compliance.
Supply support for SI2302ADS-T1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors and passive components, specializing in high-reliability power MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.
The SI2302ADS-T1 belongs to Vishay's Si230x ADS series of low-voltage N-channel MOSFETs designed specifically for space-constrained, battery-operated applications demanding logic-level gate drive and robust thermal performance in SOT-23 packages.
FAQ
What is the maximum gate-source voltage rating for the SI2302ADS-T1?
The SI2302ADS-T1 has a maximum gate-source voltage rating of ±8 V. Exceeding this value risks permanent gate oxide damage. This rating allows safe operation with standard 3.3-V and 5-V logic interfaces when using appropriate gate resistors and clamping, and is explicitly defined in the Absolute Maximum Ratings table of Vishay document 71831.
Can the SI2302ADS-T1 be used with a 2.5-V microcontroller GPIO?
Yes, the SI2302ADS-T1 is fully compatible with 2.5-V GPIOs: its gate threshold voltage ranges from 0.65 V to 1.2 V, and it delivers 0.115 Ω RDS(on) at VGS = 2.5 V with ID = 3.1 A. This ensures strong enhancement and low conduction loss without level shifting, as verified in the "Specifications" section of the official datasheet.
Is the SI2302ADS-T1 halogen-free and RoHS-compliant?
Yes, the SI2302ADS-T1 (ordering code Si2302ADS-T1-GE3) is both halogen-free per IEC 61249-2-21 and RoHS-compliant per Directive 2002/95/EC. These certifications are explicitly stated in the "Features" section and ordering information of Vishay document 71831, and apply to the exact part number supplied by Aetrix Electronics.
What is the thermal resistance junction-to-ambient for the SI2302ADS-T1 on FR4?
The SI2302ADS-T1 has a maximum junction-to-ambient thermal resistance (RthJA) of 175 °C/W under steady-state conditions on a standard FR4 board, and 140 °C/W for t ≤ 5 s pulses. These values are measured per JEDEC standards and appear in the "Thermal Resistance Ratings" table of the Vishay datasheet (document 71831).
Does the SI2302ADS-T1 include an integrated body diode?
Yes, the SI2302ADS-T1 includes an inherent parasitic body diode between source and drain. Its forward voltage is 0.76 V typical at IS = 0.94 A and VGS = 0 V, as specified in the "Diode Forward Voltage" parameter of the datasheet. This diode enables freewheeling current paths in inductive loads and reverse-bias protection.
SI2302ADS-T1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-236-3, SC-59, SOT-23-3
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 2.1A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 60mOhm @ 3.6A, 4.5V
- Vgs(th) (Max) @ Id:
- 1.2V @ 50µA
- Gate Charge (Qg) (Max) @ Vgs:
- 10 nC @ 4.5 V
- Vgs (Max):
- ±8V
- Input Capacitance (Ciss) (Max) @ Vds:
- 300 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 700mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-23-3 (TO-236)
SI2302ADS-T1 FAQ
1.How can I place an order for SI2302ADS-T1 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI2302ADS-T1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI2302ADS-T1 reliable?
The price and inventory of SI2302ADS-T1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI2302ADS-T1 is usually 5 days.
3.What payment methods are accepted for SI2302ADS-T1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI2302ADS-T1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI2302ADS-T1?
SI2302ADS-T1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI2302ADS-T1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI2302ADS-T1?
For technical support, including SI2302ADS-T1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI2302ADS-T1 requirements.
6.How does Aetrix verify that SI2302ADS-T1 is sourced from the original manufacturer or authorized distributors?
All SI2302ADS-T1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI2302ADS-T1 meets industry standards.
7.What is the process for return or replacement of SI2302ADS-T1?
All SI2302ADS-T1 units undergo pre-shipment inspection (PSI). If there is an issue with SI2302ADS-T1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI2302ADS-T1 part is unused and in its original packaging.
Return procedure for SI2302ADS-T1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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