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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI2302ADS-T1-E3

Name: SI2302ADS-T1-E3
Brand: Vishay Siliconix
SKU: SI2302ADS-T1-E3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI2302ADS-T1-E3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: SI2302ADS-T1-E3.pdf

Description:: MOSFET N-CH 20V 2.1A SOT23-3

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Product details

Overview

SI2302ADS-T1-E3 from Vishay Siliconix is an N-channel enhancement-mode MOSFET optimized for low-voltage switching in portable power management, load switching, and battery protection circuits. It features a 20 V drain-source breakdown voltage, 0.060 Ω R_DS(on) at V_GS = 4.5 V, 2.4 A continuous drain current (T_A = 25 °C), and SOT-23 (TO-236) surface-mount packaging.

For engineers reviewing the SI2302ADS-T1-E3 datasheet, SI2302ADS-T1-E3 pinout, SI2302ADS-T1-E3 application, or SI2302ADS-T1-E3 equivalent, key selection criteria include its 2.5-V gate threshold compatibility with 3.3-V/2.5-V logic, low on-resistance at low gate drive, and thermal performance under pulsed and steady-state conditions in space-constrained PCB layouts.

Technical Context

This MOSFET operates as a single N-channel switch with gate-controlled conduction between drain and source terminals. Its 0.95 V typical gate threshold voltage enables reliable turn-on from 2.5-V microcontroller I/O, while the 4.0 nC total gate charge supports fast switching in DC-DC converter synchronous rectification and PWM-driven load control.

The device integrates a body diode with 0.76 V forward voltage at 0.94 A, supporting reverse-current paths in buck converters and battery back-up circuits. Thermal resistance of 140 °C/W (steady-state) requires careful PCB copper area design to maintain junction temperature below 150 °C under 2.1 A continuous operation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS Max	20 V - Supports input rails up to 18 V with margin for transients in USB-powered or Li-ion battery systems
R_DS(on)	0.060 Ω at V_GS = 4.5 V - Delivers <150 mW conduction loss at 2 A, enabling thermally efficient load switching
I_D Continuous	2.4 A at T_A = 25 °C - Rated for sustained current in handheld device power rails with standard FR4 layout
V_GS(th)	0.65–1.2 V - Ensures full enhancement with 2.5-V logic-level drivers without level-shifting circuitry
Q_g	4.0–10 nC - Enables sub-100 ns switching transitions with moderate gate driver strength (e.g., MCU GPIO + 100 Ω series resistor)
C_iss	300 pF - Limits high-frequency gate drive current demand and EMI generation in 1–5 MHz switching applications
P_D	0.9 W at T_A = 25 °C - Requires ≥100 mm² 1-oz copper pad for thermal compliance in sealed enclosures

Pinout & Package

Package: SOT-23 (TO-236), 3-lead surface-mount package with standard footprint per Vishay Document 71196. Dimensions: 2.80 × 2.10 × 1.12 mm (L × W × H), 0.95 mm lead pitch.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control terminal	Receives logic-level voltage to modulate channel conductivity; requires <100 nA leakage current handling
2 (Source)	Reference node	Common return path for load current; tied to system ground or battery negative in high-side configurations
3 (Drain)	Power output	Connects to switched load or power rail; carries full load current and must be routed with adequate trace width

Key Features

Feature	Design Value
100 % R_g tested	Guarantees gate resistance ≤2 Ω, ensuring consistent switching speed and predictable gate drive requirements across production lots
Halogen-free construction	Meets IEC 61249-2-21, enabling use in environmentally regulated consumer electronics and industrial equipment
RoHS-compliant (Pb-free)	Qualified per Directive 2002/95/EC, supporting lead-free reflow profiles and global regulatory compliance
Low V_GS(th) distribution	0.65–1.2 V range ensures robust turn-on margin across temperature and process variation in battery-powered systems
Body diode with low V_SD	0.76 V forward drop at 0.94 A reduces power loss in freewheeling paths of DC-DC converters and motor drivers

Applications

Portable Power Management	Battery Protection Circuits
Use Scenario: Controlling power delivery to peripherals (e.g., USB ports, sensors) in smartphones and wearables using 3.3-V MCU GPIO. IC Role / Device Role / Timing Role: Low-side load switch enabling software-controlled power gating with minimal quiescent current. Use Value: 0.060 Ω R_DS(on) limits voltage drop to <120 mV at 2 A, preserving system efficiency and battery runtime.	Use Scenario: Isolating defective or over-discharged cells in multi-cell Li-ion packs during charging/discharging cycles. IC Role / Device Role / Timing Role: Primary discharge FET in protection IC-based solutions, activated only when cell voltage remains within safe thresholds. Use Value: 20 V V_DS rating accommodates up to four-series Li-ion cells (max 16.8 V), with 150 °C max junction temperature supporting compact pack thermal design.
DC-DC Converter Synchronous Rectification	LED Backlight Load Switching
Use Scenario: Replacing Schottky diodes in 3–5 V input buck converters for tablets and IoT hubs to improve conversion efficiency. IC Role / Device Role / Timing Role: Synchronous rectifier driven by controller's complementary gate signal, conducting during low-side phase. Use Value: 4.0 nC Q_g allows clean turn-on/turn-off at 2 MHz switching frequency with minimal gate drive power overhead.	Use Scenario: Enabling/disabling LED backlight strings in LCD displays powered from 5-V or 3.3-V rails in medical monitors and industrial HMIs. IC Role / Device Role / Timing Role: High-speed on/off switch controlled by PWM dimming signal or system enable line. Use Value: 2.4 A continuous rating supports up to 20 white LEDs (100 mA each) with headroom for surge currents during startup.

Portable Power Management

Battery Protection Circuits

Use Scenario: Controlling power delivery to peripherals (e.g., USB ports, sensors) in smartphones and wearables using 3.3-V MCU GPIO.

IC Role / Device Role / Timing Role: Low-side load switch enabling software-controlled power gating with minimal quiescent current.

Use Value: 0.060 Ω R_DS(on) limits voltage drop to <120 mV at 2 A, preserving system efficiency and battery runtime.

Use Scenario: Isolating defective or over-discharged cells in multi-cell Li-ion packs during charging/discharging cycles.

IC Role / Device Role / Timing Role: Primary discharge FET in protection IC-based solutions, activated only when cell voltage remains within safe thresholds.

Use Value: 20 V V_DS rating accommodates up to four-series Li-ion cells (max 16.8 V), with 150 °C max junction temperature supporting compact pack thermal design.

DC-DC Converter Synchronous Rectification

LED Backlight Load Switching

Use Scenario: Replacing Schottky diodes in 3–5 V input buck converters for tablets and IoT hubs to improve conversion efficiency.

IC Role / Device Role / Timing Role: Synchronous rectifier driven by controller's complementary gate signal, conducting during low-side phase.

Use Value: 4.0 nC Q_g allows clean turn-on/turn-off at 2 MHz switching frequency with minimal gate drive power overhead.

Use Scenario: Enabling/disabling LED backlight strings in LCD displays powered from 5-V or 3.3-V rails in medical monitors and industrial HMIs.

IC Role / Device Role / Timing Role: High-speed on/off switch controlled by PWM dimming signal or system enable line.

Use Value: 2.4 A continuous rating supports up to 20 white LEDs (100 mA each) with headroom for surge currents during startup.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN2020LSD-13	R_DS(on) = 0.055 Ω @ 4.5 V; slightly lower gate charge (3.5 nC); same SOT-23 package	Marginally better efficiency in high-frequency switching; identical board footprint	Preferred where <5% conduction loss reduction justifies sourcing from Diodes Inc.
AO3400	R_DS(on) = 0.042 Ω @ 4.5 V; higher ID (5.7 A); same V_DS and package	Higher current capability suits designs requiring future scalability or derated operation	Select when >2.4 A peak load current or extended thermal margin is required without layout change

Compared with DMN2020LSD-13 and AO3400, the SI2302ADS-T1-E3 offers tighter V_GS(th) distribution and 100 % R_g testing-critical for deterministic timing in battery-fuel-gauge interfaces and low-power wake-up circuits where gate drive consistency affects system-level power budget accuracy.

Availability

SI2302ADS-T1-E3 is available at Aetrix Electronics and suitable for portable power management, battery protection, and DC-DC converter synchronous rectification requiring stable component supply and RoHS-compliant, halogen-free manufacturing.

Supply support for SI2302ADS-T1-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors and passive components, specializing in high-reliability MOSFETs, diodes, and power ICs for demanding industrial and automotive applications.

The Si2302ADS product line delivers logic-level N-channel MOSFETs optimized for space-constrained, low-voltage power switching in battery-operated devices-designed to replace mechanical switches and higher-R_DS(on) alternatives without compromising thermal or electrical performance.

FAQ

What is the maximum continuous drain current rating for SI2302ADS-T1-E3 at 70 °C ambient temperature?

The SI2302ADS-T1-E3 supports 1.7 A continuous drain current at T_A = 70 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the SOT-23 package under real-world PCB conditions without forced airflow or heatsinking. Designers should verify junction temperature using R_thJA = 175 °C/W (steady-state) and actual power dissipation in their layout to ensure safe operation below 150 °C.

Does SI2302ADS-T1-E3 require a gate resistor for reliable switching with a 3.3-V microcontroller?

Yes, SI2302ADS-T1-E3 benefits from a series gate resistor (typically 10–100 Ω) when driven directly by a 3.3-V microcontroller GPIO. While its 4.0 nC gate charge is modest, uncontrolled edge rates can cause ringing or EMI; a 47 Ω resistor balances switching speed (≈20–50 ns rise/fall) and drive-stage stability. The SI2302ADS-T1-E3 gate threshold of 0.65–1.2 V ensures full turn-on even with GPIO voltage droop under capacitive load.

Can SI2302ADS-T1-E3 be used in high-side switching configurations?

No-SI2302ADS-T1-E3 is an N-channel MOSFET and cannot function as a true high-side switch without a gate voltage elevated above the source. In high-side applications, it would require a dedicated gate driver or charge pump to achieve V_GS ≥ 4.5 V. For such roles, a P-channel alternative like SI2301ADS-T1-E3 or integrated high-side load switch is recommended instead of adapting the SI2302ADS-T1-E3.

What is the significance of "100 % R_g tested" for SI2302ADS-T1-E3?

"100 % R_g tested" means every SI2302ADS-T1-E3 unit undergoes production screening to verify gate resistance ≤2 Ω. This ensures consistent gate drive timing and minimizes batch-to-batch variation in switching behavior-critical for timing-sensitive applications like battery fuel gauging, where gate delay affects current-sense accuracy and state-of-charge estimation fidelity in the SI2302ADS-T1-E3's operational envelope.

Is SI2302ADS-T1-E3 suitable for driving inductive loads such as small solenoids or relays?

Yes, SI2302ADS-T1-E3 can drive inductive loads up to 2.0 A DC with appropriate flyback protection. Its 20 V V_DS rating and built-in body diode (V_SD = 0.76 V) provide basic freewheeling capability, but external Schottky clamping is recommended for faster decay and reduced voltage overshoot. Pulse current rating of 10 A allows brief inrush handling during relay coil energization, provided duty cycle and thermal design stay within SOA limits defined in the SI2302ADS-T1-E3 datasheet.

SI2302ADS-T1-E3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 2.1A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 2.5V, 4.5V

Rds On (Max) @ Id, Vgs:: 60mOhm @ 3.6A, 4.5V

Vgs(th) (Max) @ Id:: 1.2V @ 50µA

Gate Charge (Qg) (Max) @ Vgs:: 10 nC @ 4.5 V

Vgs (Max):: ±8V

Input Capacitance (Ciss) (Max) @ Vds:: 300 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 700mW (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-23-3 (TO-236)

SI2302ADS-T1-E3 FAQ

1.How can I place an order for SI2302ADS-T1-E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI2302ADS-T1-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI2302ADS-T1-E3 reliable?

The price and inventory of SI2302ADS-T1-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI2302ADS-T1-E3 is usually 5 days.

3.What payment methods are accepted for SI2302ADS-T1-E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI2302ADS-T1-E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI2302ADS-T1-E3?

SI2302ADS-T1-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI2302ADS-T1-E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI2302ADS-T1-E3?

For technical support, including SI2302ADS-T1-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI2302ADS-T1-E3 requirements.

6.How does Aetrix verify that SI2302ADS-T1-E3 is sourced from the original manufacturer or authorized distributors?

All SI2302ADS-T1-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI2302ADS-T1-E3 meets industry standards.

7.What is the process for return or replacement of SI2302ADS-T1-E3?

All SI2302ADS-T1-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SI2302ADS-T1-E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI2302ADS-T1-E3 part is unused and in its original packaging.

Return procedure for SI2302ADS-T1-E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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