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Vishay Siliconix SI2302ADS-T1-GE3
- Part No.:
- SI2302ADS-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-236-3, SC-59, SOT-23-3
- Datasheet:
-
SI2302ADS-T1-GE3.pdf
- Description:
- MOSFET N-CH 20V 2.1A SOT23-3
- Quantity:
- Payment:
- Shipping:
Inventory:7,360
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Product details
Overview
SI2302ADS-T1-GE3 from Vishay Siliconix is an N-channel enhancement-mode MOSFET optimized for low-voltage switching in portable power management, load switching, and battery protection circuits. It features a 20 V drain-source breakdown voltage, 0.060 Ω RDS(on) at VGS = 4.5 V, 2.4 A continuous drain current (TA = 25 °C), and SOT-23 (TO-236) surface-mount packaging.
For engineers reviewing the SI2302ADS-T1-GE3 datasheet, SI2302ADS-T1-GE3 pinout, SI2302ADS-T1-GE3 application, or SI2302ADS-T1-GE3 equivalent, key selection criteria include its 2.5 V gate-threshold compatibility with 3.3 V logic, halogen-free and RoHS-compliant construction, and verified 100 % Rg testing for consistent switching performance in space-constrained DC-DC and USB power-path designs.
Technical Context
This device operates as a single N-channel silicon MOSFET with enhancement-mode gate control, requiring positive VGS to conduct. Its 0.95 V typical gate threshold enables reliable turn-on from 2.5 V–3.3 V microcontroller I/Os, while its 0.070 Ω RDS(on) at VGS = 2.5 V supports efficient operation in low-voltage battery-powered systems.
The SI2302ADS-T1-GE3 integrates a body diode with 0.76 V forward voltage at 0.94 A, enabling bidirectional current handling in reverse-polarity protection and synchronous rectification topologies. Thermal resistance of 140 °C/W (steady-state) and 115 °C/W (t ≤ 5 s) defines its power dissipation limits on FR4 PCBs without heatsinking.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS max | 20 V - Supports input rails up to 18 V with margin for transients in USB, Li-ion, and 3.3 V/5 V systems. |
| RDS(on) @ 4.5 V | 0.060 Ω - Delivers <150 mW conduction loss at 2 A, suitable for high-efficiency load switches. |
| RDS(on) @ 2.5 V | 0.115 Ω - Ensures functional switching with 2.5 V logic drivers, critical for ultra-low-power MCU interfaces. |
| ID continuous | 2.4 A @ TA = 25 °C - Enables direct replacement of discrete load switches in compact consumer electronics. |
| Qg total | 4.0–10 nC - Low gate charge reduces drive power and speeds switching in PWM-controlled power paths. |
| VGS(th) | 0.65–1.2 V - Guarantees robust turn-on with standard CMOS outputs and eliminates need for level shifters. |
| TJ range | −55 to +150 °C - Qualified for industrial and automotive under-hood auxiliary functions with derating. |
Pinout & Package
Package: SOT-23 (TO-236), 3-lead surface-mount package with standard footprint per Vishay Document 71196. Dimensions: 2.80 × 2.10 × 1.12 mm (L × W × H), 0.95 mm lead pitch.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Gate) | Control input | Receives logic-level VGS; 100 % Rg tested to ensure ≤2 Ω gate resistance for predictable rise/fall times. |
| 2 (Source) | Reference node | Common return path for load current; connects to ground or low-side reference in high-side switch configurations. |
| 3 (Drain) | Power output | Carries switched load current; thermally coupled to PCB copper for passive cooling in 0.7 W steady-state operation. |
Key Features
| Feature | Design Value |
|---|---|
| Halogen-free construction | Complies with IEC 61249-2-21, eliminating brominated flame retardants for safer end-of-life processing. |
| 100 % Rg tested | Guarantees gate resistance ≤2 Ω, ensuring consistent switching speed and minimizing gate driver stress across production lots. |
| RoHS-compliant | Fully compliant with Directive 2002/95/EC; Pb-free and compatible with standard reflow profiles (JEDEC J-STD-020). |
| Low VGS(th) distribution | 0.65–1.2 V range ensures reliable turn-on with 2.5 V/3.3 V logic without external biasing networks. |
Applications
| USB Power Switching | Li-ion Battery Protection |
|---|---|
Use Scenario: Selective enable/disable of USB VBUS power in portable hosts or hubs with strict 3.3 V logic control. IC Role / Device Role: Low-side load switch controlling current path between USB port and downstream circuitry. Use Value: 0.115 Ω RDS(on) at 2.5 V gate drive minimizes voltage drop and heat generation during sustained 1.5 A USB charging. | Use Scenario: Overcurrent and reverse-polarity protection in single-cell Li-ion battery packs for wearables and IoT sensors. IC Role / Device Role: Primary discharge FET in protection IC-based solutions, placed between battery cathode and load. Use Value: −55 to +150 °C operating range and 20 V VDS rating support safe cutoff during fault conditions across extended temperature environments. |
| Microcontroller GPIO Expansion | DC-DC Converter Synchronous Rectifier |
Use Scenario: Driving higher-current peripherals (e.g., LEDs, buzzers, small solenoids) from resource-constrained MCU GPIO pins. IC Role / Device Role: Logic-level N-channel switch translating weak GPIO output into robust 2.4 A load current capability. Use Value: 0.060 Ω RDS(on) at 4.5 V enables <200 mW loss at full rated current, eliminating need for external heat sinking. | Use Scenario: Secondary-side synchronous rectification in 3.3 V–5 V buck converters for improved efficiency over Schottky diodes. IC Role / Device Role: Low-VGS controlled rectifier replacing body diode conduction during freewheeling phase. Use Value: Body diode VSD = 0.76 V at 0.94 A reduces forward loss versus 0.3 V Schottky alternatives when gate timing is precisely controlled. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN2004LK-7 | RDS(on) = 0.055 Ω @ 4.5 V; slightly lower threshold (0.5–1.0 V); same SOT-23 package. | Marginally better conduction loss but tighter VGS(th) distribution may increase risk of unintended turn-on in noisy environments. | Prefer when lowest possible RDS(on) is critical and system noise is well-controlled. |
| AO3400 | RDS(on) = 0.028 Ω @ 10 V; requires ≥4.5 V for full enhancement; not specified at 2.5 V in datasheet. | Superior performance at 5 V drive, but unsuitable for 2.5 V logic interfaces without gate boosting. | Select only if system uses 5 V GPIO or dedicated gate driver; avoid for direct 2.5 V MCU control. |
Compared with DMN2004LK-7 and AO3400, the SI2302ADS-T1-GE3 offers the broadest gate-drive compatibility (functional down to 2.5 V), halogen-free compliance, and verified Rg testing-making it optimal for cost-sensitive, space-constrained, and environmentally regulated portable power designs where drive voltage headroom is limited.
Availability
SI2302ADS-T1-GE3 is available at Aetrix Electronics and suitable for USB power delivery, Li-ion battery protection, and microcontroller peripheral driving applications requiring stable component supply, long-term lifecycle assurance, and halogen-free compliance.
Supply support for SI2302ADS-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors and passive components, specializing in high-reliability power MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.
The Si2302ADS product line targets low-voltage, high-density power switching in portable electronics, emphasizing logic-level gate drive, halogen-free materials, and robust thermal performance in miniature SOT-23 packages.
FAQ
What is the maximum continuous drain current for SI2302ADS-T1-GE3 at 70 °C ambient temperature?
The SI2302ADS-T1-GE3 supports 1.7 A continuous drain current at TA = 70 °C under steady-state conditions, as specified in the Absolute Maximum Ratings table. This value reflects thermal derating due to reduced power dissipation capability (0.46 W) at elevated ambient temperatures on standard FR4 PCBs.
Does SI2302ADS-T1-GE3 have a built-in body diode, and what is its forward voltage?
Yes, the SI2302ADS-T1-GE3 includes an integrated source-drain body diode with a typical forward voltage of 0.76 V at IS = 0.94 A and VGS = 0 V. This diode enables reverse-current conduction in applications like reverse-polarity protection and synchronous rectification.
Is SI2302ADS-T1-GE3 compatible with lead-free reflow soldering processes?
Yes, SI2302ADS-T1-GE3 is lead-free and RoHS-compliant, qualified for standard lead-free reflow profiles per JEDEC J-STD-020. Its package meets moisture sensitivity level (MSL) 1 requirements, allowing unlimited floor life before assembly.
What is the gate threshold voltage range for SI2302ADS-T1-GE3, and why does it matter for logic-level drive?
The SI2302ADS-T1-GE3 has a VGS(th) range of 0.65 V to 1.2 V, ensuring reliable turn-on with 2.5 V and 3.3 V logic outputs without external level shifting. This low-threshold design prevents partial enhancement and excessive RDS(on) in battery-powered systems where supply voltage may sag.
How is thermal performance characterized for SI2302ADS-T1-GE3 on a standard FR4 board?
On FR4 board, the SI2302ADS-T1-GE3 exhibits a maximum junction-to-ambient thermal resistance of 175 °C/W under steady-state conditions. For short pulses (≤5 s), RthJA drops to 140 °C/W, enabling brief 10 A pulsed operation while maintaining TJ ≤ 150 °C.
SI2302ADS-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-236-3, SC-59, SOT-23-3
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 2.1A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 60mOhm @ 3.6A, 4.5V
- Vgs(th) (Max) @ Id:
- 1.2V @ 50µA
- Gate Charge (Qg) (Max) @ Vgs:
- 10 nC @ 4.5 V
- Vgs (Max):
- ±8V
- Input Capacitance (Ciss) (Max) @ Vds:
- 300 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 700mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-23-3 (TO-236)
SI2302ADS-T1-GE3 FAQ
1.How can I place an order for SI2302ADS-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI2302ADS-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI2302ADS-T1-GE3 reliable?
The price and inventory of SI2302ADS-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI2302ADS-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SI2302ADS-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI2302ADS-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI2302ADS-T1-GE3?
SI2302ADS-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI2302ADS-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI2302ADS-T1-GE3?
For technical support, including SI2302ADS-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI2302ADS-T1-GE3 requirements.
6.How does Aetrix verify that SI2302ADS-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SI2302ADS-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI2302ADS-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SI2302ADS-T1-GE3?
All SI2302ADS-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI2302ADS-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI2302ADS-T1-GE3 part is unused and in its original packaging.
Return procedure for SI2302ADS-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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