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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI2304BDS-T1-BE3

Name: SI2304BDS-T1-BE3
Brand: Vishay Siliconix
SKU: SI2304BDS-T1-BE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI2304BDS-T1-BE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: SI2304BDS-T1-BE3.pdf

Description:: N-CHANNEL 30-V (D-S) MOSFET

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Product details

Overview

SI2304BDS-T1-BE3 from Vishay Siliconix is an N-channel 30 V (D-S) TrenchFET® Power MOSFET in SOT-23 package, rated for 3.2 A continuous drain current at 25 °C, with R_DS(on) = 0.070 Ω at V_GS = 10 V and 0.105 Ω at V_GS = 4.5 V, used in low-side load switching for portable power management.

For engineers reviewing the SI2304BDS-T1-BE3 datasheet, SI2304BDS-T1-BE3 pinout, SI2304BDS-T1-BE3 application, or SI2304BDS-T1-BE3 equivalent, key selection criteria include its 30 V V_DS, 2.6 nC typical gate charge, 1.08 W P_D at 25 °C, thermal resistance R_thJA = 130 °C/W, and halogen-free compliance per IEC 61249-2-21.

Technical Context

This MOSFET employs trench-gate silicon technology optimized for low R_DS(on) and fast switching in compact DC-DC and battery-switching circuits. Its gate threshold voltage (V_GS(th)) ranges from 1.5 V to 3.0 V, enabling reliable turn-on with 3.3 V or 5 V logic-level drive.

The device integrates a body diode with V_SD = 0.8–1.2 V at I_S = 1.25 A and exhibits C_iss = 225 pF, C_oss = 50 pF, and Cr_ss = 28 pF at V_DS = 15 V - parameters critical for minimizing switching losses in high-frequency PWM control.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - maximum blocking voltage for 24 V rail and automotive 12 V systems
R_DS(on) @ V_GS = 10 V	0.070 Ω - enables <150 mW conduction loss at 3.2 A, suitable for thermally constrained PCBs
R_DS(on) @ V_GS = 4.5 V	0.105 Ω - supports direct interface with 3.3 V microcontrollers without level-shifting
Q_g (Typ.)	2.6 nC - reduces gate drive power and enables >1 MHz switching in synchronous buck stages
P_D @ T_A = 25 °C	1.08 W - defines maximum steady-state power dissipation on standard FR4 with no heatsink
R_thJA (Steady State)	130 °C/W - determines junction temperature rise under ambient conditions for reliability margining
V_GS(th)	1.5–3.0 V - ensures robust turn-on across process and temperature variation in battery-powered devices

Pinout & Package

SOT-23 (TO-236) surface-mount package with 3 leads: Drain (Pin 1), Gate (Pin 2), Source (Pin 3). Dimensions: 2.80–3.04 mm × 2.10–2.64 mm × 0.89–1.12 mm height. Footprint matches JEDEC MS-012AC standard.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (D)	Drain	Main current-carrying terminal; connected to high-side of load or switched rail; electrically tied to exposed drain pad in thermal path
Pin 2 (G)	Gate	Control input; requires <2.6 nC charge for full enhancement; sensitive to ESD (±20 V max rating)
Pin 3 (S)	Source	Reference node for gate drive and current return path; body diode anode; common connection point for low-side switch topology

Key Features

Feature	Design Value
TrenchFET® architecture	Delivers lower R_DS(on) per die area than planar MOSFETs, enabling smaller SOT-23 footprint without sacrificing current capability
100 % R_g tested	Ensures gate resistance ≤ 6 Ω, guaranteeing consistent switching speed and reducing risk of oscillation in high-dI/dt applications
Halogen-free construction	Meets IEC 61249-2-21 definition, supporting environmental compliance for consumer and industrial end equipment
RoHS-compliant (Pb-free)	Lead-free termination compatible with standard reflow profiles; marking code "L4" identifies Si2304BDS variant

Applications

Power Bank Load Switch	USB-C Port Protection
Use Scenario: Enables/disables power delivery to external devices from lithium-ion battery packs with overcurrent and thermal foldback. IC Role / Device Role / Timing Role: Low-side N-channel switch controlled by system MCU GPIO; handles up to 3.2 A peak load current. Use Value: 0.070 Ω R_DS(on) limits voltage drop to <225 mV at 3.2 A, preserving battery runtime and minimizing self-heating on compact PCBs.	Use Scenario: Provides overcurrent and short-circuit protection for USB-C downstream ports in docking stations and monitors. IC Role / Device Role / Timing Role: High-speed switching element in e-fuse circuit; responds to fault signals within microseconds via gate-controlled shutdown. Use Value: 2.6 nC Q_g allows fast turn-off (<30 ns fall time) to limit fault energy during hot-plug events, meeting USB PD 3.1 safety timing requirements.
LED Backlight Dimming	IoT Sensor Node Power Gating
Use Scenario: PWM-driven current sink for white LED strings in smart display modules requiring precise brightness control. IC Role / Device Role / Timing Role: Synchronous low-side switch modulating LED current at 1–20 kHz; operates with 3.3 V logic-level gate drive. Use Value: R_DS(on) = 0.105 Ω at V_GS = 4.5 V ensures stable dimming linearity and <1% duty-cycle error across temperature.	Use Scenario: Powers down non-critical subsystems (e.g., RF transceivers, ADCs) during sleep mode to extend battery life in wireless sensor nodes. IC Role / Device Role / Timing Role: Always-on enable switch controlled by ultra-low-power MCU; must support <1 µA leakage in off-state. Use Value: IDSS ≤ 0.5 µA at V_DS = 30 V and V_GS = 0 V guarantees sub-µA quiescent current, preserving multi-year coin-cell operation.

Power Bank Load Switch

USB-C Port Protection

Use Scenario: Enables/disables power delivery to external devices from lithium-ion battery packs with overcurrent and thermal foldback.

IC Role / Device Role / Timing Role: Low-side N-channel switch controlled by system MCU GPIO; handles up to 3.2 A peak load current.

Use Value: 0.070 Ω R_DS(on) limits voltage drop to <225 mV at 3.2 A, preserving battery runtime and minimizing self-heating on compact PCBs.

Use Scenario: Provides overcurrent and short-circuit protection for USB-C downstream ports in docking stations and monitors.

IC Role / Device Role / Timing Role: High-speed switching element in e-fuse circuit; responds to fault signals within microseconds via gate-controlled shutdown.

Use Value: 2.6 nC Q_g allows fast turn-off (<30 ns fall time) to limit fault energy during hot-plug events, meeting USB PD 3.1 safety timing requirements.

LED Backlight Dimming

IoT Sensor Node Power Gating

Use Scenario: PWM-driven current sink for white LED strings in smart display modules requiring precise brightness control.

IC Role / Device Role / Timing Role: Synchronous low-side switch modulating LED current at 1–20 kHz; operates with 3.3 V logic-level gate drive.

Use Value: R_DS(on) = 0.105 Ω at V_GS = 4.5 V ensures stable dimming linearity and <1% duty-cycle error across temperature.

Use Scenario: Powers down non-critical subsystems (e.g., RF transceivers, ADCs) during sleep mode to extend battery life in wireless sensor nodes.

IC Role / Device Role / Timing Role: Always-on enable switch controlled by ultra-low-power MCU; must support <1 µA leakage in off-state.

Use Value: IDSS ≤ 0.5 µA at V_DS = 30 V and V_GS = 0 V guarantees sub-µA quiescent current, preserving multi-year coin-cell operation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN3026LSD-13	R_DS(on) = 0.055 Ω @ 10 V (lower), Q_g = 3.2 nC (higher), same SOT-23 package	Better conduction efficiency but slower switching; suited for DC/low-frequency loads where gate drive strength is ample	Select DMN3026LSD-13 when minimizing I²R loss dominates over switching loss, e.g., always-on power rails
AO3400	R_DS(on) = 0.042 Ω @ 10 V (lower), V_GS(th) = 0.7–1.4 V (lower), higher gate leakage (±250 nA)	Enhanced logic-level drive but reduced noise immunity; not recommended for noisy industrial environments	Select AO3400 only when interfacing with weak-drive 1.8 V/2.5 V controllers and thermal margin exceeds 20 °C

Compared with DMN3026LSD-13 and AO3400, SI2304BDS-T1-BE3 offers balanced R_DS(on)/Q_g trade-off, tighter V_GS(th) distribution, and verified halogen-free compliance - making it optimal for cost-sensitive, thermally constrained, and environmentally regulated portable designs.

Availability

SI2304BDS-T1-BE3 is available at Aetrix Electronics and suitable for power bank load switching, USB-C port protection, and IoT sensor node power gating requiring stable component supply and RoHS/halogen-free compliance.

Supply support for SI2304BDS-T1-BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors and passive components, specializing in high-reliability power MOSFETs, diodes, and optoelectronics for industrial, computing, and consumer markets.

The Si2304BDS belongs to Vishay's TrenchFET® Gen III family, engineered for high-efficiency, low-voltage DC-DC conversion and battery-powered load switching with emphasis on thermal performance and manufacturability in SOT-23.

FAQ

What is the maximum continuous drain current for SI2304BDS-T1-BE3 at 70 °C ambient temperature?

The SI2304BDS-T1-BE3 supports 2.5 A continuous drain current at T_A = 70 °C under standard FR4 mounting conditions (t ≤ 5 s). This derating reflects thermal limitations imposed by its R_thJA = 130 °C/W and P_D = 0.69 W at that temperature. Designers must verify PCB copper area and airflow to maintain junction temperature below 150 °C in sustained operation.

Does SI2304BDS-T1-BE3 support 3.3 V logic-level gate drive?

Yes, SI2304BDS-T1-BE3 is fully compatible with 3.3 V logic-level drive: its V_GS(th) range (1.5–3.0 V) ensures turn-on, and R_DS(on) = 0.105 Ω at V_GS = 4.5 V confirms strong enhancement. At exactly 3.3 V, R_DS(on) increases slightly but remains functional for ≤2 A loads - validated by transfer characteristic curves in the official datasheet.

What is the safe operating area (SOA) limitation for SI2304BDS-T1-BE3 in single-pulse conditions?

In single-pulse operation at T_A = 25 °C, SI2304BDS-T1-BE3 is limited by R_DS(on) at low V_DS, by V_DS breakdown at high V_DS, and by pulsed current (I_DM = 10 A) at intermediate points. The SOA curve shows 100 ms pulse capability up to ~4.5 A at 10 V V_DS; designers must consult Figure 12 in datasheet 72503 for exact boundaries.

Is SI2304BDS-T1-BE3 pin-compatible with other SOT-23 N-channel MOSFETs like SI2300 or SI2302?

No - SI2304BDS-T1-BE3 has Drain-Gate-Source pinout (Pin 1=D, Pin 2=G, Pin 3=S), while SI2300 and SI2302 use Gate-Drain-Source (Pin 1=G, Pin 2=D, Pin 3=S). Swapping them causes immediate malfunction or damage. Always verify pin assignment using the top-marking diagram and package drawing 71196 before layout or replacement.

What thermal considerations apply when using SI2304BDS-T1-BE3 in a high-density PCB layout?

SI2304BDS-T1-BE3 relies on PCB copper as its primary heat sink. For thermal reliability, use ≥25 mm² of 2-oz copper connected to the drain pad (Pin 1), avoid enclosing the device in tight enclosures, and maintain ≥0.5 mm clearance to adjacent components. Its normalized transient impedance curve (Figure 15) shows 50 % thermal resistance reduction within 10 ms - critical for burst-mode power delivery.

SI2304BDS-T1-BE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 2.6A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 70mOhm @ 2.5A, 10V

Vgs(th) (Max) @ Id:: 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 7 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 225 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 750mW (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-23-3 (TO-236)

SI2304BDS-T1-BE3 FAQ

1.How can I place an order for SI2304BDS-T1-BE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI2304BDS-T1-BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI2304BDS-T1-BE3 reliable?

The price and inventory of SI2304BDS-T1-BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI2304BDS-T1-BE3 is usually 5 days.

3.What payment methods are accepted for SI2304BDS-T1-BE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI2304BDS-T1-BE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI2304BDS-T1-BE3?

SI2304BDS-T1-BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI2304BDS-T1-BE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI2304BDS-T1-BE3?

For technical support, including SI2304BDS-T1-BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI2304BDS-T1-BE3 requirements.

6.How does Aetrix verify that SI2304BDS-T1-BE3 is sourced from the original manufacturer or authorized distributors?

All SI2304BDS-T1-BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI2304BDS-T1-BE3 meets industry standards.

7.What is the process for return or replacement of SI2304BDS-T1-BE3?

All SI2304BDS-T1-BE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI2304BDS-T1-BE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI2304BDS-T1-BE3 part is unused and in its original packaging.

Return procedure for SI2304BDS-T1-BE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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